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1 Linear Arrays and Planar Arrays with Separable Distributions 123 122 Pattern Synthesis for Linear and Planar Arrays

illumination, while the zeros closer to the main beam are chosen similar to those of examined the limit of a continuous line source and drew conclusions about allowed
the Chebyshev pattern. illuminations and pattern far-sidelobe levels. He compared the pattern of the Cheby-
Since Taylor chose to simulate and then modify not the Chebyshev array shev illumination with that of a constant illumination [sm(-rrz)l'TTZ\ for z = uLlA,
pattern, but that of a continuous source with similar features to the Chebyshev which has the highest efficiency in the large-array limit.
pattern, he used the following ideal line source pattern as substitute: As pointed out by Taylor, the loss in efficiency of the Chebyshev pattern results
from the requirement that sidelobe heights are constant. For large arrays, this
F0(z, A) = COS[TT(Z2 - A1)112] implies that increasingly more of the energy is in the sidelobe region. In the limit of
for z2 > A2 (3.24) a very large array, maintaining the Chebyshev sidelobe structure requires an
I, , ,1 unrealizable aperture illumination. He showed that the far sidelobes of a given line
2,1/2, = cosh[?r(A - for z2 < A2
z) \ source are a function only of the line source edge illumination. In particular, for a
line source of length 2a, and if the edge illumination has the behavior
where

(«-1*1 (3.23)
z = uLIX and the sidelobe ratio is

evidently given as the value of FQ at z = 0, or for x measured from the center of the source, then for a > 0, the far-sidelobe level
has the behavior indicated in Table 3.1. The values for a < 0 are not given because
r = cosh(7M) (3.25) the illuminations are unrealizable.
The above data show that selecting an aperture illumination with zero derivative
so A is defined as (a= 0) or a pedestal at the array edge leads to far sidelobes with angular dependence
sin TTZITTZ, like those of the uniform illumination. This pattern distribution maintains
its efficiency as the array is made larger. Choice of larger values of a makes the far
A =-cosh" 1 r (3.26) sidelobes decay faster, as indicated in the table, but have generally lower efficiency.
IT
Taylor also showed that the location of the far zeros of the pattern are deter-
As shown by Van der Mass [19], this pattern corresponds to the limiting case mined by the edge illumination. The rath pair of pattern zeros (for n large) occur at
of the Chebyshev array as the number of elements is indefinitely increased, and locations
has zeros at the locations
(3.27) Zn = +(n + a/2)
N = 1, 2, 3, . . . ,
\2il/2
as n tends to infinity.
The pattern has the Chebyshev characteristics with all sidelobes equal,
Clearly, this too is consistent with the uniform illumination case for a = 0.
but is physically unrealizable for the reasons described earlier, since the far nulls have
However, when compared with the actual location of the nth pair of zeros for the
asymptotic locations corresponding to a = — 1.
Chebyshev pattern, it is found that these occur asymptotically at +(« - 1/2). These
An expression for the beamwidth of this idealized pattern is readily obtained
zero locations correspond to a = -1, an unrealizable illumination for the continuous
from the pattern function, since, in the main beam region,
aperture case.
W-*2)"2 (3.28) Taylor expanded upon these mathematical insights to suggest a pattern function
with zeros far from the main beam at locations that correspond to the uniform
cosh 1 Fo (z, A) = and

at the half-power point

= cosh"1(r/2I/2) (3.29) Table 3.1 Array Far

Sidelobe Level Versus
Edge Illumination
Combining these relations gives the half-power beamwidth (in w-space) as u Parameter a
a Asymptotic
F(z)
» r ~ {(cosh" 1 r)2 - Icosh" 1 {r/2 m }f} m (3.30)
0 (sin VZ)I{TTZ)
L 77" 1 (cos ttz'jlivz 2-)
2 (sin 7TZ)/{ITZ3)
3 (cot **)/(«*)
Note: z= M'i/A.