energies

Article
Modeling and Analysis of the Common Mode Voltage
in a Cascaded H-Bridge Electronic Power Transformer
Yun Yang, Chengxiong Mao, Dan Wang ID
, Jie Tian * and Ming Yang
State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and
Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;
yangyun@hust.edu.cn (Y.Y.); cxmao@mail.hust.edu.cn (C.M.); wangdan@mail.hust.edu.cn (D.W.);
M201571226@hust.edu.cn (M.Y.)
* Correspondence: tian_jie@hust.edu.cn; Tel.: +86-27-8754-2669

Academic Editor: Tomonobu Senjyu

Received: 13 August 2017; Accepted: 5 September 2017; Published: 8 September 2017

Abstract: Electronic power transformers (EPTs) have been identified as emerging intelligent electronic
devices in the future smart grid, e.g., the Energy Internet, especially in the application of renewable
energy conversion and management. Considering that the EPT is directly connected to the
medium-voltage grid, e.g., a10 kV distribution system, and its cascaded H-bridges structure, the
common mode voltage (CMV) issue will be more complex and severe. The CMV will threaten the
insulation of the entire EPT device and even produce common mode current. This paper investigates
the generated mechanism and characteristics of the CMV in a cascaded H-bridge EPT (CHB-EPT)
under both balanced and fault grid conditions. First, the CHB-EPT system is introduced. Then,
a three-phase simplified circuit model of the high-voltage side of the EPT system is presented.
Combined with a unipolar modulation strategy and carrier phase shifting technology by rigorous
mathematical analysis and derivation, the EPT internal CMV and its characteristics are obtained.
Moreover, the influence of the sinusoidal pulse width modulation dead time is considered and
discussed based on analytical calculation. Finally, the simulation results are provided to verify the
validity of the aforementioned model and the analysis results. The proposed theoretical analysis
method is also suitable for other similar cascaded converters and can provide a useful theoretical
guide for structural design and power density optimization.

Keywords: electronic power transformer; cascaded H-bridge; common mode voltage; carrier phase
shift modulation; electrical insulation; dead time; fault condition

1. Introduction
Recently, renewable energy sources (RESs), e.g., photovoltaic and wind power, with a rising
penetration in the modern power grid, have attracted more attention and been exploited widely
due to their renewable and environmentally friendly nature relative to traditional fossil fuel energy.
Distributed generations and micro-grids are regarded as promising directions and technologies for the
reasonable development and utilization of RESs [1,2]. Moreover, with the concept of ‘Energy Internet’
proposed [3], RESs and related technologies are expected to be more widely applied.
However, as the fundamental elements in the legacy grid, traditional line-frequency transformers
are not well suited for the exploitation and utilization of RESs. Therefore, a multifunctional grid
interface or energy router is required for the Energy Internet.
Electronic power transformers (EPTs) [4,5], also called solid state transformers (SSTs) or power
electronic transformers (PETs) [6,7], has been investigated in recent years and identified as an emerging
intelligent electronic device to meet the aforementioned requirements for the future smart grid or
Energy Internet [8,9]. Unlike a line-frequency transformer, an EPT is generally composed of power

Energies 2017, 10, 1357; doi:10.3390/en10091357 www.mdpi.com/journal/energies

Energies 2017, 10, 1357 2 of 16

electronic converters and medium frequency transformers (MFTs) [10]. Therefore, the controllability
and multi-object operation can be implemented flexibly such as active power transmission and voltage
level conversion, fast and continuous on-load voltage regulation [11], reactive power compensation
and current harmonics suppression, fault current limitation, interface to RESs, and so on.
When an EPT is connected to a high or medium voltage power grid, e.g., a 10 kV distribution
system, due to the limit of blocking the voltage rating of insulated gate bipolar transistors (IGBTs) or
other switching devices, a series-input/cascaded structure has been the most reasonable and popular
choice for EPTs [5,6,12], e.g., the 10 kV cascaded H-bridge EPT (CHB-EPT) industrial prototype
presented in the literature [5].
It is well known that pulse width modulation (PWM) converters always generate common mode
voltage (CMV) [13,14], also called zero-sequence voltage. Especially, a high common mode dv/dt will
be generated at a switching instant, when the converter operates at a high switching frequency, which
would bring many problems to converter devices, both internal and external. For instance [15–17]:

• Due to the long power cables connecting to the grid or motors, the traveling high-rise-rate CMV
wave reflected by the terminals of cables will further result in overvoltage for terminal devices
and cause bearing currents that reduce the life of the motors.
• High dv/dt may cause leakage currents through the parasitic capacitances, which also damage the
insulation of elements in the devices, e.g., power cables; in addition, it also creates electromagnetic
interference problems, which will interfere with the control systems of devices.

Since an EPT is composed of cascaded H-bridges on the high-voltage side, the aforementioned
CMV phenomenon and problems will exist as well and would be more serious and complex, which
directly affects the insulation performance and safety operation of the EPT.
For the CMV in traditional two-level PWM converters or grid-connected photovoltaic inverters,
since the generation mechanism and analysis are relatively simple, much literature deals with it
by improving PWM strategy and employing common mode filters or improved topologies [18–21].
As for the analysis and reduction of the CMV in cascaded converters, due to the significant damage
to the insulation and bearing current of motors, much of the literature and research focuses on
medium-voltage adjustable speed drive (MV-ASD) systems. The literature [13] analyses systematically
the CMV in the MV-ASD and establishes a common mode equivalent circuit, then suppresses the CMV
by means of an improved modulation scheme. In the literature [22], the characteristics and paths of
common mode current (CMI) in cascaded-multilevel-inverter-based photovoltaic system are analyzed,
and suppression filters are designed. As for EPTs, related analysis of the CMV in the previously
mentioned literature cannot be applied to them directly, due to their different topologies and control
strategies. So far, few papers discuss the CMV or CMI in EPTs. The literature [23,24] presents the
CMV and CMI phenomenon in the SST with a solidly grounded neutral point on the high-voltage
side and designs common mode chokes to suppress the CMI based on the CMI equivalent circuit.
However, the generation mechanisms and distribution characteristics of the CMV in the EPT have not
been discussed analytically in the literature. In addition, other factors, e.g., dead time and grid fault
condition, are not considered as well.
In this paper, the analysis of the generation mechanism and the characteristics of the CMV in the
CHB-EPT, for both the under balanced and fault grid conditions, are presented, based on the simplified
circuit model of CHB-EPT and the corresponding PWM strategy, which can provide theoretical
guidance for the insulation design and power density optimization of cascaded converters. The analysis
method is also applicable for other cascaded converters, e.g., CHB-STATCOM and CHB-inverters.
Section 2 introduces the CHB-EPT system considered in this paper and establishes its equivalent
simplified circuit model on the high-voltage side. Section 3 gives the analytical calculation of the
CMV in the EPT using the Fourier series analysis method. In Section 4, the results of the analytical
calculations are verified by a simulation in MATLAB.
Energies 2017,
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2. Description of the CMV in a CHB-EPT

2. Description of the CMV in a CHB-EPT
In this section, the configuration of the considered CHB-EPT system and its internal CMV are
introduced.
In this section, the configuration of the considered CHB-EPT system and its internal CMV
are introduced.
2.1. CHB-EPT System
2.1. CHB-EPT System
Figure 1 shows a distribution system configured with a 10 kV/400 V EPT and the topology of
Figure 1 shows
the CHB-EPT a distribution
considered system
in this paper, configured
which with ain10a kV/400
is designed modularVfashion
EPT and andtheconsists
topologyof
of the CHB-EPT considered in this paper, which is designed in a
single-phase sub-units that include high-voltage power cells (HVPCs), medium frequency modular fashion and consists of
single-phase
transformerssub-units
(MFTs), that
andinclude high-voltage
low-voltage powerpowercells cells (HVPCs),
(LVPCs) [5]. medium frequency
Since MFTs transformers
provide galvanic
(MFTs),
isolationandandlow-voltage power cells
voltage conversion (LVPCs)
[10], [5]. circuit
the main Since MFTs
also provide galvanicinto
can be divided isolation and voltage
high-voltage and
conversion [10], the main circuit also can be divided into high-voltage and low-voltage
low-voltage sides. At the high-voltage side, h back-to-back H-bridges are cascaded to sustain a high sides. At the
high-voltage side, h and
grid phase voltage back-to-back
three phases H-bridges are cascadedwith
are Y-connection to sustain a high
a floating grid phase
neutral point. voltage
Unipolar and three
double
phases are Y-connection with a floating neutral point. Unipolar double
frequency sinusoidal pulse width modulation (SPWM) and carrier phase shift (CPS) modulation frequency sinusoidal pulse
width modulation
technology [25] are(SPWM)
adoptedand in thecarrier phaserectifier;
H-bridge shift (CPS)
thenmodulation technologyswitching
2h kHz equivalent [25] are adopted
frequency in
the
can H-bridge
be obtained rectifier;
whenthen
the f s kHz equivalent
2h IGBTs work at switching frequency
kHz switching can be obtained
frequency. Note thatwhen thethevoltage
IGBTs
work at f sGkHz
reference switching
in Figure frequency. Note
1b, constructed that10the
by three kVvoltage
potentialreference G in Figure
transformers (PTs),1b, constructed
is meant to offerbya
three 10 kVground
reference potential
fortransformers
CMV in this(PTs), is meant
paper. These to offer a reference
descriptions form ground
the basisforfor
CMV theinsubsequent
this paper.
These
analysisdescriptions
of CMV. form the basis for the subsequent analysis of CMV.

110 kV 10 kV 400 V
Load

EPT
(a)
PT
High-voltage side Low-voltage side
Input stage Isolation stage Output stage
G
A h a
ah
Ah
10-kV Power Grid

2
400-V Load

a2
A2

1
A1 a1

HVPC MFT LVPC

B b
Phase B
C c
Phase C n
N
Neutral Point
(b)
Figure 1.
Figure 1. Schematic
Schematic diagram
diagram of
of (a)
(a) an
an Electronic
Electronic power
power transformer
transformer (EPT)-based
(EPT)-based distribution
distribution system;
system;
and (b) a 10 kV/400 V cascaded H-bridge EPT (CHB-EPT).
and (b) a 10 kV/400 V cascaded H-bridge EPT (CHB-EPT).

2.2. The
2.2. The CMV
CMV atat the
the High-Voltage
High-Voltage Side
Side in the EPT
in the EPT System
System
This paper
This paper mainly
mainly focusses
focusses on
on the
the CMV
CMV problem
problem at at the
the high-voltage
high-voltage side
side of
of EPT.
EPT. Although
Although the
the
CMV appears at the low-voltage side as well, it is not significant relative to the high-voltage
CMV appears at the low-voltage side as well, it is not significant relative to the high-voltage side in side in
terms of
terms of insulation
insulation design.
design. In addition, due
In addition, due to the isolation
to the isolation stage
stage embedded
embedded MFTs, which block
MFTs, which block the
the
mutual transmission and influence of the CMVs on both sides, the CMV at the low-voltage
mutual transmission and influence of the CMVs on both sides, the CMV at the low-voltage side will side will
not be
not be considered
considered inin this
this paper.
paper.
Energies 2017, 10, 1357 4 of 16

At the2017,
Energies
Energies high-voltage
10,10,
2017, 1357
1357 side, the CHB rectifier connects to the MV grid directly. Especially4 of 4when
1616 a
of
long connecting power cable is employed, the CMV problem will be more complicated and worse due
AtAtthe
thehigh-voltage
high-voltageside,side,the
theCHB
CHBrectifier
rectifierconnects
connectstotothetheMV
MVgridgriddirectly.
directly.Especially
Especiallywhen
whena a
to voltage reflection phenomena and cable to ground capacitance, which will result in overvoltage,
long
longconnecting
connectingpowerpowercable
cableisisemployed,
employed,the theCMV
CMVproblem
problemwill
willbebemore
morecomplicated
complicatedand andworse
worse
even resonance [16,17]. Obviously, higher insulation design requirements should be taken into account
due
duetotovoltage
voltagereflection
reflectionphenomena
phenomenaand andcable
cabletotoground
groundcapacitance,
capacitance,which
whichwillwillresult
resultinin
in EPT devices. Ineven
overvoltage,
overvoltage,even
view of this, the
resonance
resonance[16,17].
analysis of the CMV
[16,17].Obviously,
Obviously,higher
atinsulation
the high-voltage
higherinsulation design
side will be presented
designrequirements
requirementsshould
shouldbebe
in
the following.
taken
takeninto
intoaccount
accountininEPTEPTdevices.
devices.InInview
viewofofthis,
this,the
theanalysis
analysisofofthe
theCMV
CMVatatthethehigh-voltage
high-voltageside
side
will
willbebepresented
presentedininthe
thefollowing.
following.
2.2.1. Voltages Generated by the HVPC
2.2.1.
2.2.1.Voltages
Figure VoltagesGenerated
Generated
2a shows bybythe
the circuit theHVPC
ofHVPC
a high-voltage power cell (HVPC). Each HVPC consists of a
high-voltage
Figure rectifier
Figure 2a2ashowsandthe
shows athe
front-end
circuit voltage
circuitofof source power
a ahigh-voltage
high-voltage converter
powercell (VSC)
(HVPC).
cell in the
(HVPC). Each isolation
Each HVPC stage.
HVPCconsists Note
consists ofofa that
a
the dc-link midpoint
high-voltage
high-voltage (marked
rectifier
rectifierand with o) between
anda afront-end
front-end voltagethe
voltage upper
source
source and lower
converter
converter (VSC) capacitors
(VSC) ininthe in Figure
theisolation
isolation 2 isNote
stage.
stage. virtual,
Note
just that
tothatthe
thedc-link
the midpoint
dc-link
facilitate midpoint(marked
definition (marked
and with
witho)o)between
calculation between
of the
related theupper
upperand
voltages andlower
lowercapacitors
generated capacitors
in the HVPC.ininFigure
Figure2 2isis
virtual,
virtual,just
Referring toto
just
to facilitate
facilitate
the the
left VSC thedefinition
definitionand
H-bridge inand calculation
calculation
Figure ofof
2a, the related
related
input voltages
voltagesgenerated
differential generated ininthe
mode voltage theHVPC.
vHVPC.
aa0 is defined
Referring
Referring
as the difference totothe
betweentheleft
left
theVSC
VSC
twoH-bridge
H-bridge
PWM voltagesininFigure
Figure 2a,
2a,the
across theinput
eachinput differential
phase differential mode
modevoltage
input terminal, voltage
a and a0 , to isisthe
defined
defined as the
as thedifference
difference between
between
dc-link midpoint o, which can be expressed as: the
the two
two PWM
PWM voltages
voltages across
across each
each phase
phase input
inputterminal,
terminal, a aand
and
, to
, tothe
thedc-link
dc-linkmidpoint
midpointo,o,which
whichcan
canbebeexpressed
expressedas:as:
v aav0 v==v=vaov−
−−vvav0 o (1)
aaaa
' ' aoao a ' oa ' o (1)(1)

where v ao and vand

where
where 0 o are determined
aand are by thebyPWM
aredetermined
determined bythe strategy
thePWM and the
PWMstrategy
strategy dc-link
and
andthe voltage.
thedc-link FigureFigure
dc-linkvoltage.
voltage. 3Figure
illustrates
33
the operating
illustrates principle
illustratesthe
theoperating of the
operating unipolar
principle
principle SPWM
ofofthe
theunipolar modulation
unipolar SPWM strategy employed
SPWMmodulation
modulation strategy by the left
strategyemployed
employed H-bridge
bybythe left in
theleft
H-bridge
FigureH-bridge
2a, where vFigure
ininFigure
SA and2a, −where
2a, vwhere
SA arevSAvthe
SAandand− v−SA
reference vSAarearethe
thereference
sinusoidal wavessinusoidal
reference the leftwaves
sinusoidal
for waves for
forthe
and right theleft
leftand
H-bridge and
arms
respectively
right and varms
rightH-bridge
H-bridge r is triangular
arms carrier.
respectively
respectivelyand and v v
r ris triangular
is triangular carrier.
carrier.

aa aa
VV vT vT vT vT
vT v1 T 1
+ +dc dc
aa 22

a 'a '
VV
- -dc dc vBvB vT v2 T 2 vBvB
22
'
'
aa '
a a'
(a)(a) (b)
(b)
Figure
Figure2. 2.(a)(a)The
Thetopology
topologyofofa ahigh-voltage
high-voltagepower
powercells
cells(HVPC);
(HVPC);(b)(b)Equivalent
Equivalentcircuit
circuitmodel
modelofof
Figure 2. (a) The topology of a high-voltage power cells (HVPC); (b) Equivalent circuit model of HVPC
HVPC
HVPC forfor
common mode
common modevoltage (CMV)
voltage analysis.
(CMV) analysis.
for common mode voltage (CMV) analysis.

11 vSAvSA −v−SAvSA

vrvr tt
-1-1
+ + ⁄2⁄2 vaovao
− − ⁄2⁄2
tt
vav'oa'o
+ + ⁄2⁄2
− − ⁄2⁄2 tt
vaav'aa'
++

−− ⁄ ⁄ tt

Figure 3. Unipolar
Figure
Figure sinusoidal
3. 3.Unipolar
Unipolar pulsepulse
sinusoidal
sinusoidal width modulation
pulsewidth (SPWM)
widthmodulation
modulation modulation
(SPWM)
(SPWM) strategy
modulation
modulation for anfor
strategy
strategy H-bridge.
foranan
H-bridge.
H-bridge.
Energies 2017,
Energies 10, 1357
2017, 10, 1357 55 of
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Figure 2b shows the equivalent circuit model (ECM) of a single HVPC, in which the voltage
Figure 2b shows the equivalent circuit model (ECM) of a single HVPC, in which the voltage
potential of the midpoint with respect to ground can reflect the variation of voltages in HVPC. Due
potential of the midpoint with respect to ground can reflect the variation of voltages in HVPC. Due to
to the bipolar modulation strategy generally employed by the back-end H-bridge [5], we have:
the bipolar modulation strategy generally employed by the back-end H-bridge [5], we have:
v + vT 2
vTcm =vT1T 1+ vT2 =0 (2)
v Tcm =
2
2 =0 (2)

where represents the CMV with respect to the midpoint for MFT primary windings. If
where v Tcm represents the CMV with respect to the midpoint for MFT primary windings. If neglecting
neglecting the voltage sources and , the equivalent voltage model for CMV analysis can be
the voltage sources v T1 and v T2 , the equivalent voltage model for CMV analysis can be further
further simplified, as is shown in Figure 2b.
simplified, as is shown in Figure 2b.
2.2.2.
2.2.2. The
The CMV
CMV at
at Neutral
Neutral Point
Point
Referring tothe
Referring to the modeling
modeling methods
methods and equivalent
and equivalent circuits circuits in [13,22,23],
in [13,22,23], a simplifieda three-phase
simplified
three-phase equivalent circuit for the high-voltage side of the EPT illustrated in Figure
equivalent circuit for the high-voltage side of the EPT illustrated in Figure 1b is exhibited in Figure 1b is4.
exhibited
Note thatin Figure
the 4. converted
grid is Note that the grid is converted
equivalently equivalentlyvoltage
to a star-connected to a star-connected
source for thevoltage source
analysis and
for the analysis and
calculation of CMV. calculation of CMV.

Grid
g
B C
eA A

ah
v AhT vBhT vChT
O Ah ( virtual) O Bh O Ch

v AhB vBhB vChB

'
a h

a2
v A 2T v B 2T vC 2T
O A2 ( virtual) OB2 OC 2

vA2 B vB 2 B vC 2 B
a2'
a1
v A1T vB1T vC1T
O A1 ( virtual) O B1 OC1

v A1B vB1B vC1B

a1' N

vcm

Figure
Figure4.
4.Equivalent
Equivalentcircuit
circuitfor
forcommon
commonmode
modevoltage
voltage analysis
analysis in
in three-phase
three-phase CHB-EPT.
CHB-EPT.

In Figure 4, each phase stack has h ECMs of HVPC in series, and three-phase stacks are
In Figure 4, each phase stack has h ECMs of HVPC in series, and three-phase stacks are symmetric
symmetric with a common unearthed neutral point N. It should be noted that the relevant parasitic
with a common unearthed neutral point N. It should be noted that the relevant parasitic capacitances
capacitances in each HVPC are not drawn in Figure 4 to highlight the generation mechanism and
in each HVPC are not drawn in Figure 4 to highlight the generation mechanism and characteristics of
characteristics of the CMV.
the CMV.
The CMV between point N and ground is defined as , shown in Figure 4. Considering that
The CMV between point N and ground is defined as vcm , shown in Figure 4. Considering that
the MV grid, i.e., the 10 kV distribution system, often operates without grounding (e.g., a
the MV grid, i.e., the 10 kV distribution system, often operates without grounding (e.g., a distribution
distribution system in Figure 1a), even in the case of the occurrence of a single-phase earth fault, the
system in Figure 1a), even in the case of the occurrence of a single-phase earth fault, the EPT will
EPT will continue to operate for the line-to-line voltages continue to be balanced as well and the
continue to operate for the line-to-line voltages continue to be balanced as well and the relay protection
relay protection of the grid would not trip to make an outage immediately. Whether on the normal
Energies 2017, 10, 1357 6 of 16

of the grid would not trip to make an outage immediately. Whether on the normal or single-phase
to ground fault condition, the control strategy for the operating of EPT is not affected. However, the
corresponding voltages between point N and ground are different.

• Normal grid: For the three-phase balanced power grid, the voltage between the virtual grid
neutral g (see the location in Figure 4) and ground can be assumed as zero so the neutral point of
the grid can be chosen as the reference ground directly; then we have vcm = v Ng .
• Single-phase to ground fault: The voltage between the neutral point g of the grid and ground will
shift up to phase voltage when a single-phase to ground fault occurs. For a balanced EPT, the
CMV at neutral point N with respect to ground will be shifted synchronously. Then we have:

v0cm = v Ng + v g− ground (3)

where v g− ground is the voltage between the neutral point of the grid in Figure 4 and ground.

In addition, other types of grid faults will not be considered because they are not within the
normal operating range of the EPT.

2.2.3. Voltages with Respect to Ground in HVPCs

Taking phase A for example, from Figure 4, it can be seen that the voltage between OxL
(L = 1, 2 . . . h) and N can be expressed as:

L −1
v LAoN = v ALB + ∑ viaa0 (4)
i =1

where L is the sequence number of the corresponding HVPC. Then the voltage v LAog with respect to
ground in HVPC L can be obtained from:

v LAog = v LAoN + vcm (5)

As seen from Figure 4 and Equationss (4) and (5), the voltage at each midpoint o in the
corresponding HVPC will change following the variation of the switching transitions in its lower
HVPCs , i.e., the equivalent voltage sources v T and v B . Thus, the voltage potential at each HVPC not
only contains a DM component but also contains the CM component, i.e., the CMV at the neutral point.

3. Analytical Calculation of Voltages in EPT

3.1. Principle and Method to Calculate Voltages in EPT System

In this section, an analytical method for calculating the CMV at neutral points and the voltage
potential of HVPCs in an EPT system is proposed. The proposed analytical procedure is described
as follows:

(1) Calculate the CMV at neutral point N with respect to ground, i.e., vcm .
(2) Calculate the voltage between OxL and N, that is:

L L −1
v xoN = v xoN + v x( L−1)T + v xLB (6)

where x = {A, B, C}, L = 1, 2 . . . h.

(3) Finally, obtain the voltage potential with respect to ground v LAog in HVPC L based on Equation (5).
Energies 2017, 10, 1357 7 of 16

3.2. Derivation and Calculation of the CMV at Neutral Point and Voltage Potential of HVPCs

3.2.1. The CMV with Respect to Ground at a Neutral Point

For the input stage of the EPT, there are following relationships:

di A
e AN − v AN = R LS i A + Ls (7)
dt
di B
e BN − v BN = R LS i B + Ls (8)
dt
diC
eCN − vCN = R LS iC + Ls (9)
dt
where R LS and LS are the per phase equivalent resistance and inductance of the input boost inductor;
v AN , v BN , and vCN are the high-voltage side converter pole voltages with respect to point N (note that
the number of levels of the pole voltages will be up to 2h + 1 when the modulation ratio M is close to
1, where h is the number of HVPCs); e AN , e BN , eCN and i A , i B , iC are the grid voltages and currents,
respectively. In addition, the grid voltages under normal conditions can be expressed as:

exN = exg − vcm (10)

where x = {A, B, C}. Summing Equations (7) to (9), we have:

 
d
(e AN + e BN + eCN ) − (v AN + v BN + vCN ) = R LS + Ls (i A + i B + iC ) (11)
dt

Under the balanced utility grid conditions, e Ag + e Bg + eCg = 0 and i A + i B + iC ≈ 0, substituting

(10) into (11), we obtain:
1
vcm = − (v AN + v BN + vCN ) (12)
3
Taking phase A, for example, the reference sinusoidal wave vSA can be expressed as:

vSA (t) = M cos(ωs t + ϕs ) (13)

where M is the modulation ratio of the CHB rectifier in the input stage of EPT and ωs and ϕs are the
frequency and initial phase of the modulation waveform, respectively. Since h HVPCs are cascaded and
a unipolar CPS-SPWM strategy with a particular phase-shift angle of π/h based on a natural-sampling
method is employed using a similar Fourier series analysis method to that in [25,26], the output
voltages of the front-end H-bridge in Figures 2a and 3 can be obtained as follows:
∞ ∞  
L = Vdc 2Vdc 1 Mmπ
v ao 2 M cos(ωs t + ϕs ) + π ∑ ∑ m Jn 2 sin[(m + n) π2 ]cos[m(ωc t + ϕ L ) + n(ωs t + ϕs )] (14)
m=1 n=−∞

∞ ∞  
v aL0 o = − V2dc M cos(ωs t + ϕs ) + 2Vdc
π ∑ ∑ 1
m Jn
Mmπ
2 sin[(m + n) π2 ]cos[m(ωc t + ϕ L ) + n(ωs t + ϕs + π )] (15)
m=1 n=−∞

where ωc and ϕc are the angular frequency and initial phase of the carrier; ϕ L = ϕc + πh ( L − 1);
L = 1, 2 . . . h; and, hereinafter assuming that ϕs = ϕc = 0 for simplicity, which will not introduce
error for the calculation results, Vdc is the dc-link voltage of the H-bridges and Jn (·) is the n-order
∞ n+2m
Bessel function, with the expression Jn ( x ) = ∑ (−1)m 2n+2mxm!(n+m)! . Note that the dead time is not
m =1
considered in this section for simplicity.
Energies 2017, 10, 1357 8 of 16

Then, the voltage between the two input terminals of the front-end H-bridge can be given by:

L
v aa L − vL
= v ao
0 a0 o
∞ ∞ (16)
2Vdc J2n−1 ( Mmπ )
= MVdc cos(ωs t + ϕs ) + π ∑ ∑ m cos[(m + n − 1)π ]cos[2m(ωc t + ϕ L ) + (2n − 1)ωs t] .
m=1 n=−∞

Finally, the phase A stack output voltage can be given by:

h
v AN L
= ∑ v aa 0
L =1
∞ ∞ (17)
2Vdc J2n−1 (hmMπ )
= hMVdc cos ωs t + π ∑ ∑ m cos[(hm + n − 1)π ] cos[2hmωc t + (2n − 1)ωs t] .
m=1 n=−∞

Similarly, for phases B and C, the corresponding expression can be obtained by replacing ϕs with
ϕs ∓ 23 π, respectively. Substituting three phase output voltage expressions into (12), we have:

2Vdc ∞ ∞
J6n−3 (hmMπ )
vcm = − ∑ ∑
π m=1 n=−∞ m
cos[(m + 3n − 2)π ] cos[2hm(ωc t + ϕc ) + (6n − 3)ωs t] (18)

When single-phase to ground fault occurs, e.g., phase C to ground fault, according to Equation (3),
Equation (18) should be rewritten as:
∞ ∞
2Vdc J6n−3 (hmMπ )
v0cm = −eCN − π ∑ ∑ m cos[(m + 3n − 2)π ] cos[2hm(ωc t + ϕc ) + (6n − 3)ωs t] (19)
m=1 n=−∞

3.2.2. The Voltage with Respect to N at Point o xL

Still taking phase A for example, for H-bridge L in Figures 2 and 4, the voltages between the
input terminals with respect to the dc-link midpoint OxL have been derived in Equations (14) and (15).
Define the right second term of Equations (15) as function H (L), in which the variable is L.
Therefore, the voltage v1AoN between the midpoint O A1 and the neutral point N of the HVPC
located at the bottom of the phase A stack can be given by:

Vdc
v1AoN = v A1B = −v1a0 o = M cos ωs t + v1AoNh (20)
2

where v1AoNh = H (1). Similarly, the voltage v2AoN of the second HVPC can be obtained as follows:

3Vdc
v2AoN = v A2B + v1aa0 = M cos ωs t + v2AoNh (21)
2

where v2AoNh is:

∞ ∞
2Vdc J2n−1 ( Mmπ )
v2AoN = π ∑ ∑ m cos[(m + n − 1)π ]cos[2m(ωc t + ϕ L ) + (2n − 1)ωs t] + H (2) (22)
m=1 n=−∞

The other voltages between the midpoints and N, i.e., v3AoN , . . . , vhAoN , have the same structure.

3.2.3. Voltage Potential of HVPCs

According to Equations (5) and (18), the CMV with respect to ground at point OxL on the balanced
utility grid condition can be written as:

2L − 1
v LAog = M cos ωs t + v LAogh (23)
2

where v LAogh = v LAoNh + vcm , L = 1, 2 . . . h.

Energies 2017, 10, 1357 9 of 16

Similarly, for phase B and C, by replacing ϕs with ϕs ∓ 23 π, the corresponding expression can
be obtained.
In the case of the occurrence of a single-phase earth fault, Equation (23) just needs to have the
corresponding fault phase-voltage subtracted.

3.3. Analysis
Energies of1357
2017, 10, the Voltages 9 of 16

The analysis of the above mathematical expressions will be presented in this section.
3.3.1. Analysis of the CMV with Respect to Ground at Neutral Point
3.3.1.From
Analysis of the (18),
Equation CMVthe with Respect to
significant Ground
feature at Neutral
is that Point
the fundamental frequency component does
not appear in v cm . (18),
From Equation As forthethe harmonics
significant component,
feature is that thethe groups offrequency
fundamental sideband component
harmonics does
arrange
not
appear
aroundinthevcmeven
. As for the harmonics
multiples of the component,
equivalent the groups
carrier hωof c , sideband harmonics
the angular arrange
frequency and around the
amplitude
even multiples of the equivalent carrier hω , the angular (
frequency ) and amplitude value of which are
value of which are 2 ℎ ± (6 − 3) c and (m = 1, 2, 3…, n = 0, ±1, ±2…),
2Vdc J6n−3 (hmMπ )
2mhωc ± (6n − 3)ωs and π m (m = 1, 2, 3 . . . , n = 0, ±1, ±2 . . . ), respectively. Obviously,
respectively. Obviously, the amplitude of harmonics depends on the modulation ratio and the
the amplitude of harmonics depends on the modulation ratio and the harmonics order. Note that
harmonics order. Note that the amplitude here does not necessarily decrease with an increase in the
the amplitude here does not necessarily decrease with an increase in the harmonics order, and the
harmonics order, and the sideband harmonics also do not decrease symmetrically, which can be
sideband harmonics also do not decrease symmetrically, which can be seen from the following analysis.
seen from the following analysis.
Assuming that h, f s , and Vdc are 6 kHz, 1 kHz, and 1500 V, respectively, some analysis results can
Assuming that h, , and are 6 kHz, 1 kHz, and 1500 V, respectively, some analysis results
be obtained as follows:
can be obtained as follows:
(1) The relationship
(1) The relationshipbetween thethe
between amplitude of theof
amplitude CMV
theharmonics component
CMV harmonics and the modulation
component and the
ratio M
modulation ratio M
Equation (18) shows that the lowest harmonic group
group corresponds
corresponds to
to m
m == 1, and the variable x of
n-order Bessel
an n-order Functionisisx ==hmMπ
Bessel Function ℎ = 6Mπ.
= 6 . Then
Then the
the n-order
n-order Bessel
Bessel Function
Function curves can be
as in
plotted as in Figure
Figure 5.
5.

Figure 5.
Figure The relationship
5. The relationship between Bessel | Jn ( x )| and
between Bessel modulationM.
andmodulation M.

As shown
As showninin Figure
Figure 5, when
5, when m = 1,mthe
= modulation
1, the modulation ratio Mfrom
ratio M changes changes from
0 to 1, the 0 to 1, the
corresponding
corresponding order of the maximum amplitude harmonic is varied. For example, when
order of the maximum amplitude harmonic is varied. For example, when M is 0.9, the order M is 0.9, the
of the
order of theamplitude
maximum maximumharmonic
amplitude ± 15. is 240 ± 15.
harmonic
is 240
(2) The relationship between the amplitude of CMV harmonics and its order
(2) The relationship between the amplitude of CMV harmonics and its order
Figure 6 shows the relationship between the amplitude of CMV harmonics and its order, where
Figure 6 shows
M is set as 0.9. It canthe
be relationship
seen that thebetween thehere
amplitude amplitude of necessarily
does not CMV harmonics andwith
decrease its order, where
an increase
M is set as 0.9. It can be seen that the amplitude here does not necessarily decrease with an
in the harmonics order. This point should be considered as especially involved in suppressing theincrease in
the harmonics
CMIs in the EPT. order. This point should be considered as especially involved in suppressing the CMIs
in the EPT.
Energies 2017, 10, 1357 10 of 16
Energies 2017, 10, 1357 10 of 16

Figure 6.
Figure 6. Relationship between the
Relationship between the amplitude
amplitude of
of CMV
CMV harmonics
harmonics and
and its
its order.
order.

3.3.2. Analysis of the Voltage

3.3.2. Voltage with
with Respect
Respect to
toGround
Groundat
atMidpoint oxL
Midpointo xL
From
From (23),
(23), itit can
can be
be found
found that
that the
the expression
expression of of the
the voltage
voltage withwith respect
respect toto ground
ground at at the
the
midpoint
midpoint o xL , contains the fundamental frequency component, and its amplitude
, contains the fundamental frequency component, and its amplitude increases with the increases with the
characteristics
characteristics of of an
an arithmetic
arithmetic series. As for
series. As for the
the harmonics
harmonics component,
component, it it can
can be
be divided
divided into
into two
two
parts;
parts; one
onepartpartis the high-order
is the harmonics
high-order generated
harmonics at the at
generated neutral point N,point
the neutral the other
N, thepartother
is generated
part is
by the corresponding
generated H-bridge due
by the corresponding to using due
H-bridge a unipolar
to using double frequency
a unipolar modulation
double frequency strategy.
modulation
It should be noted that the fundamental component appearing in Equation (23) is an effective
strategy.
component
It should in the outputthat
be noted voltage generated bycomponent
the fundamental the cascaded H-bridges;
appearing in other words,
in Equation (23) is itancannot be
effective
eliminated by means of improving the PWM strategies.
component in the output voltage generated by the cascaded H-bridges; in other words, it cannot be
When the
eliminated valuesof
by means ofimproving
the dc-linkthevoltage
PWMand the modulation ratio M in HVPCs are 1500 V and 1,
strategies.
respectively, the amplitudes of the fundamental
When the values of the dc-link voltage and the component
modulation of the voltage
ratio potential
M in HVPCs of1500
are HVPC 1 to 1,
V and 6
are 750 V, 2250 V, 3750 V, 5250 V, 6750 V, and 8250 V, respectively. It can be
respectively, the amplitudes of the fundamental component of the voltage potential of HVPC 1 to 6 seen that the amplitude
of
arethe
750fundamental
V, 2250 V, 3750 component of 6750
V, 5250 V, the voltage
V, and potential in the top HVPC
8250 V, respectively. It can will reach
be seen 8250
that theV,amplitude
which is
much higher than its dc-link voltage of 1500 V and also higher than the
of the fundamental component of the voltage potential in the top HVPC will reach 8250 V, which amplitude of the grid phase is
voltage,
much higherwhich is 8165
than V. Furthermore,
its dc-link voltage ofthe1500voltage
V andpotential
also higher at the
thanupper input terminal
the amplitude of theof thephase
grid MFT
primary
voltage, windings
which is 8165 connected with the top
V. Furthermore, theHVPC
voltage should add on
potential 750upper
at the V (Vdc input
/2); then it can of
terminal even
thereach
MFT
primary windings connected with the top HVPC should add on 750 V ( ⁄2); then it can
9000 V. Especially when the single-phase to ground fault of an input grid occurs, the value will
evenbe
higher,
reach 9000which V. results a huge
Especially threat
when thetosingle-phase
the insulation to of HVPCs
ground andofMFTs
fault in thegrid
an input EPT.occurs, the value
will be higher, which results a huge threat to the insulation of HVPCs and MFTs in the EPT.
3.4. Effects of SPWM Dead Time on the CMV
3.4. Effects of SPWM
The effects Dead Time
of SPWM dead on theon
time CMV
the CMV are not considered in the above analysis and results
for the sake
The of simplifying
effects of SPWMthe calculation
dead time onand thehighlighting
CMV are not theconsidered
distributionin characteristics of the CMV.
the above analysis and
It should be pointed out that, in practice, the dead time
results for the sake of simplifying the calculation and highlighting Td , e.g., a few microseconds, generally must
the distribution characteristics of
be inserted into the switching signals of the IGBTS or other switching devices
the CMV. It should be pointed out that, in practice, the dead time , e.g., a few microseconds, to prevent a short
circuit.
generally Hence,
mustinbethis section,into
inserted the impact of SPWM
the switching dead of
signals time
theon IGBTS
the CMV orin the EPT
other will be devices
switching discussedto
and analyzed.
prevent a short circuit. Hence, in this section, the impact of SPWM dead time on the CMV in the
EPT Thewill practical
be discussedoutput
andvoltage of phase A stack v∗AN can be divided into two parts; an ideal part,
analyzed.
i.e., the
Theoutput voltage
practical outputexpressed
voltageinofEquation
phase A (17) without
stack ∗ dead
can time, andinto
be divided a correction
two parts;part caused
an ideal by
part,
dead time. Equation (17) can be rewritten as:
i.e., the output voltage expressed in Equation (17) without dead time, and a correction part caused
by dead time. Equation (17) can be rewritten
h as: h  
v∗AN = ∑ vhL∗0 = ∑h v aa L L
0 + v err_aa0 (24)
v*ANL==1 v L∗' =L=
aa
1 vL ' + vL
aa
L =1
aa
(
err _ aa '
L =1
) (24)
L
where verr_aa 0 is the error voltage caused by the dead time. The total error voltage v err_A of the phase A
where is the error voltage caused by the dead time. The total error voltage _ of the
stack can be_ obtained by employing the DFIA method in [25].
phase A stack can be obtained by employing the DFIA method in [25].
Energies 2017, 10, 1357 11 of 16

h h h i
L
verr_A = ∑ verr_aa L L
0 = ∑ v err_a − v err_a0
L =1 L =1
∞
= 2h ∑ [ A0,n cos(n(ωs t + ϕs )) + B0,n sin(n(ωs t + ϕs ))]
n =1
h
 
∞  2Am,n ∑ cos[2m ( ωc t + ϕ L ) + (2n − 1) ωs t ]
 
∞
 

+ ∑ ∑ L =1
h (25)
m=1 n=−∞  +2Bm,n ∑ sin[2m(ωc t + ϕ L ) + (2n − 1)ωs t]
 


L =1
∞
= 2h ∑ [ A0,n cos(n(ωs t + ϕs )) + B0,n sin(n(ωs t + ϕs ))]
n =1 ( )
∞ ∞ 2Am,n cos[2hmωc t + (2n − 1)ωs t]
+ ∑ ∑
m=1 n=−∞ +2Bm,n sin[2hmωc t + (2n − 1)ωs t]

where Am,n and Bm,n are the Fourier coefficients [25]. Similarly, for phases B and C, the corresponding
expression can be obtained by replacing ϕs with ϕs ∓ 32 π. Then, the total CMV at point N, considered
dead time, can be given by:
 
∗
vcm = − 31 v∗AN + v∗BN + vCN
∗

= vcm − 31 (verr_A + verr_B + verr_C )

∞
= vcm − 2h ∑ [ A0,3n cos(3n(ωs t + ϕs )) + B0,3n sin(3n(ωs t + ϕs ))] (26)
n=1( )
∞ ∞ 2Am,n cos[2hmωc t + (6n − 3)ωs t]
− ∑ ∑ .
m=1 n=−∞ +2Bm,n sin[2hmωc t + (6n − 3)ωs t]

From Equations (18) and (26), it can be seen that the dead time does not bring a fundamental
component to the CMV at the neutral point N. However, it will affect the harmonics component. The
analysis in the case of the occurrence of a single-phase earth fault is similar to Equation (19).

4. Simulation Results
To display the waveforms and characteristics of the CMV directly and illustrate the correctness of
the analysis presented in Section 3, simulations have been carried out in MATLAB/SIMULINK.
A model of three-phase 10 kV/400 V 1 MVA EPT with the same structure as shown in Figure 1b,
which consists of six HVPCs and six LVPCs per phase, is built. The main parameters are given in
Table 1.

Table 1. Main parameters of the 10 kV/400 V 1MVA EPT.

Parameter Value
Number of cascaded H-bridges 6 per phase
Number of paralleled H-bridges 6 per phase
Rated high voltage dc-link 1500 V
Rated low voltage dc-link 360 V
Capacitance in one high-voltage dc-link 2200 µF
Capacitance in one low-voltage dc-link 56 mF
Inductance of rectifier 30 mH
Filter inductance of the inverter 0.2 mH
Filter capacitance of the inverter 250 µF
Rated ratio of the MFIT 4.17:1
Switching frequency at high-voltage side 1 kHz
Switching frequency at low-voltage side 4 kHz

In addition, SPWM natural sampling is employed in the simulation, and the SPWM dead time is
set as 4 µs. The modulation ratio M is close to 0.9 in the simulation.
Energies 2017, 10, 1357 12 of 16
Energies 2017, 10, 1357 12 of 16
Energies 2017, 10, 1357 12 of 16
In
In addition,
addition, SPWM
SPWM natural
natural sampling
sampling isis employed
employed in in the
the simulation,
simulation, and
and the
the SPWM
SPWM deaddead time
time
is
is set as 44 μs.
set as μs. The
The modulation
modulation ratio
ratio M
M is
is close
close to
to 0.9
0.9 in
in the
the simulation.
simulation.
Figure
Figure 77 shows
shows the
the waveform
waveform ofof the phase A
the phase stack output
A stack output voltage
voltage with
with 13
13 levels,
levels, and
and it
it was
was
calculated
calculated inin Equation (17).
Equation (17).

10
10
8
8
6
6
4
4
(kV)

2
Voltage(kV)

2
0
0
-2
Voltage

-2
-4
-4
-6
-6
-8
-8
-10
-10 0.1 0.105 0.11 0.115 0.12 0.125 0.13 0.135 0.14
0.1 0.105 0.11 0.115 0.12 0.125 0.13 0.135 0.14
Time (s)
Time (s)
Figure 7. Phase A stack output voltage.
Figure 7. Phase A stack output voltage.

Figure
Figure 88 showsshows the the waveforms
waveforms of of the
the CMVCMV between
between the the neutral
neutral point
point N N and
and reference
reference ground
ground
with
with oror without
orwithout
withoutthe the
thedeaddead
deadtime time
time of
of of 4
4 µs μs inserted
μs inserted
4 inserted into
into into the
the switching switching signals.
signals.
the switching As can
signals. As can
Asbecan
seen,be seen,
beboth both
seen,CMVs
both
CMVs
have
CMVsalmosthave
have the almost
same the
almost the same
waveforms waveforms
and harmonic
same waveforms and harmonic
andperformance. performance.
The absolute The
harmonic performance. The
maximumabsolute
absolute maximum
instantaneous
maximum
instantaneous
values in bothvalues
instantaneous waveforms
values in
in both
both waveforms
can reach up can
waveforms to 1000
can reach
reach V.upThe
up to 1000
1000 V.
to ordinateV. The ordinate
value
The at the value
ordinate at
at the
right side
value theofright
Figure
right side
side 8
of
is Figure
of the 88 is
magnitude
Figure is theof magnitude
the of
of the
the 50 Hz fundamental
magnitude the 50
50 Hz Hz fundamental
component
fundamental component
and harmonic
component and
and harmonic
voltages. According
harmonic voltages.
to the
voltages.
According
According to
conclusion in the
the conclusion
to Section 3.3.1, thein Section
Section 3.3.1,
inharmonic groupthe harmonic
should appear group
aroundshould
2mhωappear around
m = 1, 2, 2
2 3ℎℎ. . . ,,,
conclusion 3.3.1, the harmonic group should c , where
appear around
where
= 6, ωm == 1, 2, 3…,i.e.,hh 240th,
== 6, ⁄⁄ ==720th20,
hwhere mc /ω s =2,20,
1, 3…, 6, 480th, 20, i.e.,
. . . 240th,
i.e., , which480th,
240th, 720th
720th …,
is consistent
480th, with
…, which is
is consistent
the fast
which with
with the
the fast
Fourier transformation
consistent fast
Fourier
(FFT)
Fourier transformation
analysis results on(FFT)
transformation (FFT) analysis
the right
analysis results
sideresults
of Figure on the right
8. More
on the side
rightagreementof Figure 8.
relations
side of Figure More
8. More agreement
between
agreement relations
the proposed
relations
between
between the
mathematical the proposed
model and
proposed mathematical
the simulation
mathematical model
model and
and the
results the simulation
can be obtainedresults
simulation can
can be
for further
results obtained
obtainedInfor
beanalysis. further
foraddition,
further
analysis.
there are In
analysis. addition,
significant
In there
there are
addition,differences are significant
between the
significant differences
low-order
differences between the
the low-order
harmonics
between appearingharmonics
low-order in Figure appearing
harmonics 8a,b, i.e., the
appearing in
in
Figure
low-order 8a,b,
Figure 8a,b, i.e.,
harmonics the low-order
have a higher
i.e., the low-order harmonics
magnitude
harmonics have a higher
have ainhigher magnitude
latter compared
magnitudewith in latter compared
thosecompared
in latter with
in the former, those
those in
with which is
in
the former,
consistent
the former,with which
which is
the is consistent
discussion
consistent with
inwith
Sectionthe discussion
the3.4 and within
discussion intheSection 3.4
results3.4
Section and
when with
andSPWM
with thethe
deadresults when
time when
results SPWM
is considered.
SPWM
dead
dead time
Thus, is
is considered.
the accuracy
time of theThus,
considered. the
the accuracy
aforementioned
Thus, accuracy modelof
of the
the aforementioned
can be proved.
aforementioned model
model can can be be proved.
proved.
Fundamental (50Hz) =2.289, THD = 22721.26%
Fundamental (50Hz) =2.289, THD = 22721.26%
1000 250
1000 250
(V)

500 200
Voltage(V)

200
(V)

500
Mag(V)

0 150
0 150
Voltage

-500 100
Mag

-500 100
-1000 50
-1000 50
0
0.1 0.12 0.14 0.16 0.18 0.2 0 0 200 400 600 800 1000 1200
0.1 0.12 0.14 0.16 0.18 0.2 0 200 400 600 800 1000 1200
Time (s) Harmonic order
Time (s) Harmonic order
(a)
(a)
Fundamental (50Hz) =1.612, THD = 31921.54%
Fundamental (50Hz) =1.612, THD = 31921.54%
1000 250
1000 250
(V)

200
Voltage(V)

500 200
(V)

500
Mag(V)

0 150
150
Voltage

0
-500 100
Mag

-500 100
-1000 50
-1000 50
0
0.1 0.12 0.14 0.16 0.18 0.2 0 0 200 400 600 800 1000 1200
0.1 0.12 0.14 0.16 0.18 0.2 0 200 400 600 800 1000 1200
Time (s) Harmonic order
Time (s) Harmonic order
(b)
(b)
Figure 8. The waveforms and corresponding the fast Fourier transformation (FFT) analysis of the
Figure 8.
Figure 8. The
Thewaveforms
waveformsandandcorresponding
corresponding thethe
fastfast Fourier
Fourier transformation
transformation (FFT)(FFT) analysis
analysis of theof the
CMV
CMV between N and reference ground: (a) without SPWM dead time; (b) with SPWM dead time.
CMV between
between N andNreference
and reference ground:
ground: (a) without
(a) without SPWMSPWM dead (b)
dead time; time; (b)SPWM
with with SPWM dead time.
dead time.
Energies 2017, 10, 1357 13 of 16

Energies 2017, 10, 1357 13 of 16

Figure
Energies 9 10,
2017, exhibits
1357 a comparison of the magnitude values of CMV harmonics between 13 of 16 the
theoretical calculation and simulation results, where the theoretical values are obtained from
Figure 9 exhibits a comparison of the magnitude values of CMV harmonics between the
Equation
Figure(18) and the
9 exhibits simulationof results
a comparison are obtained
the magnitude values of directly by employing
CMV harmonics between thethe
FFT tool in
theoretical
theoretical calculation and simulation results, where the theoretical values are obtained from
MATLAB/SIMULINK.
calculation and simulation From the where
results, comparison
the in Figurevalues
theoretical 9, it can
are be foundfrom
obtained thatEquation
the maximum (18) and error
the
Equation (18) and the simulation results are obtained directly by employing the FFT tool in
value between
simulation the theoretical
results are obtained and the simulation results is 8.67%, appearing at 507th harmonic, and
MATLAB/SIMULINK. From directly by employing
the comparison the9,FFT
in Figure toolbeinfound
it can MATLAB/SIMULINK.
that the maximum From error the
the value
minimum
comparison in error
Figure is
9, lower
it can than
be 0.39%,
found appearing
that the at
maximum 225th harmonic.
error value Although
between the
between the theoretical and the simulation results is 8.67%, appearing at 507th harmonic, and the relative
theoretical anderrors
the
of the
the minimum error is lower than 0.39%, appearing at 225th harmonic. Although the relative errors the
high-order
simulation results harmonics
is 8.67%, are slightly
appearing at larger,
507th their
harmonic, absolute
and theamplitudes
minimum are
errorlower.
is lowerTherefore,
than 0.39%,
difference
appearing between
at
of the high-order the two results
225th harmonic.
harmonics Althoughis very
are slightly the small,
relative
larger, which
their errors also
absolute verifies
of amplitudes
the the
arevalidity
high-order harmonics
lower. of theareproposed
Therefore, slightly
the
CMV
larger,mathematical
difference between
their absolute model.
the two results
amplitudes is very Therefore,
are lower. small, whichthealso verifies between
difference the validity
theoftwo theresults
proposed is very
CMV
small, mathematical
which model.
also verifies the validity of the proposed CMV mathematical model.
350
350
300
255.47

255.53
254.48

254.48
300
255.47

255.53
254.48

254.48
Calculation
系列1 Results
250 Calculation
系列1 Results
250 Simulation
系列2 Results
Mag (V)

200 Simulation
系列2 Results
Mag (V)

132.06
131.14

200
124.22

124.22
132.06
131.14
124.22

124.22

150
150

84.28 47.62

84.21
83.09

83.09
84.28

84.21
83.09

83.09
64.04

64.04
62.86

62.86
61.47

61.17
60.88

60.88
60.59
100100

57.37
57.26
64.04

64.04
62.86

62.86

61.1

52.14
51.35

61.47

61.17
60.88

60.88
60.59
47.62

47.62
57.37
57.26

61.1

52.14
51.35

47.62
50 50

0 0
225
225237
237243
243255
255 447453
447 453 459
459 465
465 477477
483483
495495
501501
507 507
513 513
Harmonic
Harmonicorder
order

Figure
Figure 9. A
9.
Figure A9.comparison of
ofofmagnitude
A comparison
comparison magnitudevalues
magnitude values of
values CMV
of CMV harmonics
CMVharmonics
harmonicsinin the
the
in theoretical
theoretical
the calculation
calculation
theoretical and and
calculation the the
and the
simulation
simulation results.
results.
simulation results.

Figure 10 shows the CMV at a neutral point (in Figure 4) and the voltage potential with respect
Figure 10
Figure 10 shows
shows the the CMV
CMV at at aa neutral
neutral point point (in
(in Figure
Figure 4) 4) and
and the
the voltage
voltage potential
potential with with respect
respect
to ground of the cascaded HVPCs at the high-voltage side in phase A under balanced grid voltage
to ground
to ground of the
of the cascaded HVPCs at the high-voltage side in phase A under balanced grid voltage
conditions andcascaded
single-phase HVPCs at the
to ground high-voltage
fault in phase C, side in phaseFrom
respectively. A under
0.06 s balanced
to 0.10 s, the gridEPT voltage
is
conditions
conditions and
and single-phase
single-phase to
to ground
ground fault
fault in
in phase
phase C,
C, respectively.
respectively. From
From
operating under normal grid conditions. It can be clearly seen from the figure that the characteristics 0.06
0.06 ss to
to 0.10
0.10 s,
s, the
the EPT is
EPT is
operating
operating under
under normal
normal grid
grid conditions.
conditions. ItIt can
can bebe clearly
clearly seen
seen from
from the
the
of the voltages are consistent with the analysis in Sections 3.2.3 and 3.3.2, e.g., the top HVPC in figure
figure thatthat
the the characteristics
characteristics of
of the
the voltages
voltages
Figure 1bare are consistent
hasconsistent
to sustain with
the with
highest the
the analysis
voltageanalysis
in in Sections
Sections
potential 3.2.3
with and3.2.3
respect to and
3.3.2, 3.3.2,
e.g.,
ground, the e.g.,HVPC
top
reaching the
up top
toin HVPC
Figure
9000 V. 1b in
Figure
has At 1b has
0.10 s, a to
to sustain the sustain
highestthe
single-phase tohighest
voltage
ground voltage
potential
fault occurspotential
with respect
in with
phase C respect
to the 10toreaching
ground,
of kVground, reaching
up
grid. Since tothe
9000 upV.toAt9000
line-to-line 0.10V. s,
aAtsingle-phase
0.10 s, a of
voltages single-phase
10
tokV to
also maintain
ground ground
fault fault
the balance
occurs in phaseoccurs C in
in this phase
fault,
of thethe C
kVofgrid.
10 EPT the 10
continues kV
Since grid.
tothe
operate Since the voltages
to provide
line-to-line line-to-line
high of
10 quality
voltages
kV ofelectricity
also 10 kV alsofor
maintain the the
maintain loads
balance theinbalance
in the secondary
this in this
fault, side. However,
fault,continues
the EPT the
the EPT continues voltages
to operate totoin provide
Figureto10
operate change
provide
high high
quality
abruptly at
quality electricity
electricity 0.10 s, i.e.,
for the
for the loads each voltage
loads
in the is injected
in the secondary
secondary with
side. However, the voltage
side. However, of
the voltages phase C of the
theinvoltages power
Figure 10inchange grid, which
Figureabruptly
10 change at
results
abruptly in
at a
0.10significant
s, i.e., eachincrease
voltageof the
is voltage
injected potential
with thewith respect
voltage of to ground
phase
0.10 s, i.e., each voltage is injected with the voltage of phase C of the power grid, which results in a C ofof each
the HVPC.
power In
grid, the
which
worst case, the RMS of the voltage potential of the top HVPC is close to the line-voltage of the grid.
results in aincrease
significant significant increase
of the voltageof potential
the voltage potential
with respectwith respectoftoeach
to ground groundHVPC. of each
In theHVPC.
worstIncase,the
This brings a great challenge to the insulation design of the HVPC and MFT. All of the
worst
the RMS case, the voltage
of the RMS ofpotential
the voltage potential
of the top HVPC of theis top
closeHVPC
to theisline-voltage
close to theofline-voltage
the grid. This of the
bringsgrid.
a
aforementioned analysis can offer a theoretical basis for insulation design.
This brings a great challenge to the insulation design of the
great challenge to the insulation design of the HVPC and MFT. All of the aforementioned analysis can HVPC and MFT. All of the
aforementioned
offer a theoretical 10analysis
basis forcan offer a theoretical
insulation design. basis for insulation design.
8
6
10 4
8 2
6 0
4 -2
2 -4
0 -6
-2 -8
-4-100.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14
-6 Time (s)
-8
-10 (a)
0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14
Time (s)
(a)

Figure 10. Cont.

Energies 2017, 10, 1357 14 of 16
Energies 2017, 10, 1357 14 of 16

(b)
Figure 10.
Figure 10. Simulation
Simulation results:
results: Related
Related voltages
voltages under
under normal
normal and
and fault
fault conditions.
conditions. (a)
(a) The
The CMV
CMV at
at aa
neutral point; (b) the voltage potential between the midpoints of the HVPCs and ground (From toptop
neutral point; (b) the voltage potential between the midpoints of the HVPCs and ground (From to
to bottom:
bottom: , , and
v6Aog , v3Aog , and
v1Aog ). ).

5. Conclusions
5. Conclusions
This paper has investigated the generated mechanism of the CMV in a CHB-EPT, presented
This paper has investigated the generated mechanism of the CMV in a CHB-EPT, presented
the characteristics of the CMV by using an analytical calculation method, and validated them with
the characteristics of the CMV by using an analytical calculation method, and validated them with
simulation results. The main analysis results can be concluded as follows:
simulation results. The main analysis results can be concluded as follows:
• The CMV at the neutral point N under normal and balanced grid voltage conditions mainly
• The CMV
consists of at the neutral
high-order point N with
harmonics under normal high
relatively and balanced grid voltage
d ⁄d voltage conditions
stress for mainly
the high-voltage
consists of high-order harmonics with relatively high dv/dt voltage stress
side of the EPT. The EPT has to sustain a higher fundamental component of the CMV, i.e., the for the high-voltage
side of the
voltage of theEPT. The
fault EPTwhen
phase, has toit operates
sustain aunder
higher fundamental
a fault component
grid condition of the CMV,
(single-phase i.e.,
to ground
the voltage
fault). of the fault phase, when it operates under a fault grid condition (single-phase to
• ground fault).
The voltage potential at each equivalent midpoint of the HVPC with respect to ground, not only
• The voltage
includes potential
the at eachharmonics
high-order equivalent midpoint
components, of thebut
HVPCalsowith respect the
contains to ground, not only
line-frequency
includes the high-order harmonics components, but also contains the line-frequency
fundamental component. Furthermore, the magnitude of the latter will increase with an fundamental
component.
increase of Furthermore,
the sequencethe magnitude
number of theof HVPC.
the latterObviously,
will increase with
the an increase
highest of thestress
electrical sequence
will
number of the HVPC. Obviously, the highest electrical stress will appear
appear in the top HVPC, which provides a theoretical guide for the structural design and in the top HVPC, which
provides a theoretical
further power densityguide for the structural
optimization of the EPT.design and further power density optimization of
• the
SPWMEPT.dead time has little effect on the magnitude of the CMV. In addition, it will not bring a
• SPWM dead time
fundamental has little
component to effect
the CMVon the magnitude
at the of the CMV. In addition, it will not bring a
neutral point.
fundamental component to the CMV at the neutral point.
In conclusion, through the analysis of the CMV in the EPT, a theoretical guide can be put
forward for insulation
In conclusion, design
through the and power
analysis density
of the CMV optimization. In addition,
in the EPT, a theoretical the can
guide proposed analysis
be put forward
method can also be applied to other cascaded converters, e.g., CHB-STATCOM
for insulation design and power density optimization. In addition, the proposed analysis method can and CHB-inverters.
also be applied to other cascaded converters, e.g., CHB-STATCOM and CHB-inverters.
Acknowledgments: This work was supported by the National Key R & D Program of China (2017YFB0903604)
and the China Postdoctoral
Acknowledgments: Science
This work Foundationby
was supported (No.
the2017M612457).
National Key R & D Program of China (2017YFB0903604)
and the China Postdoctoral Science Foundation (No. 2017M612457).
Author Contributions: The paper was a collaborative effort of the authors. Yun Yang contributed to the
Author Contributions:
analytical Thesimulations
calculation and paper was aandcollaborative effort
wrote this of the
paper. authors. Yun
Chengxiong Yang
Mao andcontributed
Dan Wangtoconceived
the analytical
the
calculation and simulations
idea and supervised and wrote
the research. this
Jie Tian andpaper.
Ming Chengxiong
Yang performedMaothe
and Dan Wang
analysis of theconceived therevised
results and idea and
the
supervised the research. Jie Tian and Ming Yang performed the analysis of the results and revised the manuscript.
manuscript.
Conflicts of Interest: The authors declare no conflicts of interest.
Conflicts of Interest: The authors declare no conflicts of interest.

References
1. Yan, B.; Wang, B.; Zhu, L. A novel, stable, and economic power sharing scheme for an autonomous
microgrid in the energy internet. Energies 2015, 8, 12741–12764.
Energies 2017, 10, 1357 15 of 16

References
1. Yan, B.; Wang, B.; Zhu, L. A novel, stable, and economic power sharing scheme for an autonomous microgrid
in the energy internet. Energies 2015, 8, 12741–12764. [CrossRef]
2. Liserre, M.; Sauter, T.; Hung, J.Y. Future energy systems: Integrating renewable energy sources into the smart
power grid through industrial electronics. IEEE Ind. Electron. Mag. 2010, 4, 18–37. [CrossRef]
3. Huang, A.Q.; Crow, M.L.; Heydt, G.T.; Zheng, J.P.; Dale, S.J. The future renewable electric energy delivery
and management (FREEDM) system: The energy internet. Proc. IEEE 2011, 99, 133–148. [CrossRef]
4. Yang, Y.; Mao, C.; Wei, T.; Wang, D.; Tian, J. Multi-function combined operation and control strategy of
electronic power transformer for power quality improvement. IEEJ Trans. Electr. Electron. 2017. [CrossRef]
5. Wang, D.; Tian, J.; Mao, C.; Lu, J.; Duan, Y.; Qiu, J.; Cai, H. A 10-kV/400-V 500-kVA electronic power
transformer. IEEE Trans. Ind. Electron. 2016, 63, 6653–6663. [CrossRef]
6. She, X.; Huang, A.Q.; Burgos, R. Review of solid-state transformer technologies and their application in
power distribution systems. IEEE J. Emerg. Sel. Top. Power Electron. 2013, 1, 186–198. [CrossRef]
7. Brando, G.; Dannier, A.; del Pizzo, A.; Rizzo, R. Power electronic transformer for advanced grid management
in presence of distributed generation. Int. Rev. Electr. Eng. (IREE) 2011, 6, 3009–3015.
8. Kolar, J.W.; Ortiz, G. Solid-state-transformers: Key components of future traction and smart grid systems.
In Proceedings of the International Power Electronics Conference-ECCE Asia (IPEC 2014), Hiroshima, Japan,
18–21 May 2014.
9. She, X.; Huang, A.Q. Solid state transformer in the future smart electrical system. In Proceedings of the IEEE
Power and Energy Society General Meeting, Vancouver, BC, Canada, 21–25 July 2013; pp. 1–5.
10. Huang, P.; Mao, C.; Wang, D. Electric field simulations and analysis for high voltage high power medium
frequency transformer. Energies 2017, 10, 3. [CrossRef]
11. Yang, J.; Mao, C.; Wang, D.; Lu, J.; Fu, X.; Chen, X. Fast and continuous on-load voltage regulator based on
electronic power transformer. IET Electr. Power Appl. 2013, 7, 499–508. [CrossRef]
12. Zhao, C.; Dujic, D.; Mester, A.; Steinke, J.K.; Weiss, M.; Lewdeni-Schmid, S.; Chaudhuri, T.; Stefanutti, P.
Power electronic traction transformer—Medium voltage prototype. IEEE Trans. Ind. Electron. 2014, 61,
3257–3268. [CrossRef]
13. Rendusara, D.A.; Cengelci, E.; Enjeti, P.N.; Stefanovic, V.R. Analysis of common mode voltage-’neutral shift’
in medium voltage PWM adjustable speed drive (MV-ASD) systems. IEEE Trans. Power Electron. 2002, 15,
1124–1133. [CrossRef]
14. Tang, X.; Lai, C.; Liu, Z.; Zhang, M. A SVPWM to eliminate common-mode voltage for multilevel inverters.
Energies 2017, 10, 715. [CrossRef]
15. Aoki, N.; Satoh, K.; Nabae, A. Damping circuit to suppress motor terminal overvoltage and ringing in PWM
inverter-fed ac motor drive systems with long motor leads. IEEE Trans. Ind. Appl. 1999, 35, 1014–1020.
[CrossRef]
16. Jiang, Y.; Wu, W.; He, Y.; Chung, S.H.; Blaabjerg, F. New passive filter design method for overvoltage
suppression and bearing currents mitigation in a long cable based PWM inverter-fed motor drive system.
IEEE Trans. Power Electron. 2017, 32, 7882–7893. [CrossRef]
17. Lai, R.; Todorovic, M.H.; Sabate, J. Analysis and suppression of a common mode resonance in the cascaded
H-bridge multilevel inverter. In Proceedings of the Energy Conversion Congress and Exposition (ECCE),
Atlanta, GA, USA, 12–16 September 2010; pp. 4564–4568.
18. Hava, A.M.; Ün, E. Performance analysis of reduced common-mode voltage PWM methods and comparison
with standard PWM methods for three-phase voltage-source inverters. IEEE Trans. Power Electron. 2009, 24,
241–252. [CrossRef]
19. Lai, Y.S.; Shyu, F.S. Optimal common-mode voltage reduction PWM technique for inverter control with
consideration of the dead-time effects—Part I: Basic development. IEEE Trans. Ind. Appl. 2004, 40, 1605–1612.
[CrossRef]
20. Julian, A.L.; Oriti, G.; Lipo, T.A. Elimination of common-mode voltage in three-phase sinusoidal power
converters. IEEE Trans. Power Electron. 1999, 14, 982–989. [CrossRef]
21. Yang, B.; Li, W.; Gu, Y.; Cui, W.; He, X. Improved transformerless inverter with common-mode leakage
current elimination for a photovoltaic grid-connected power system. IEEE Trans. Power Electron. 2012, 27,
752–762. [CrossRef]
Energies 2017, 10, 1357 16 of 16

22. Zhou, Y.; Li, H. Analysis and suppression of leakage current in cascaded-multilevel-inverter-based PV
systems. IEEE Trans. Power Electron. 2014, 29, 5265–5277. [CrossRef]
23. Huber, J.E.; Kolar, J.W. Common-mode currents in multi-cell solid-state transformers. In Proceedings of the
2014 International Power Electronics Conference (IPEC), Hiroshima, Japan, 18–21 May 2014; pp. 766–773.
24. Guillod, T.; Huber, J.E.; Ortiz, G.; De, A.; Franck, C.M.; Kolar, J.W. Characterization of the voltage and electric
field stresses in multi-cell solid-state transformers. In Proceedings of the 2014 IEEE Energy Conversion
Congress and Exposition (ECCE), Pittsburgh, PA, USA, 14–18 September 2014; pp. 4726–4734.
25. Li, Y.; Wang, Y.; Li, B.Q. Generalized theory of phase-shifted carrier PWM for cascaded H-bridge converters
and modular multilevel converters. IEEE J. Emerg. Sel. Topics Power Electron. 2016, 4, 589–605. [CrossRef]
26. Holmes, D.; Lipo, T. Pulse Width Modulation for Power Converters: Principles and Practice, 1st ed.; Wiley:
Hoboken, NJ, USA, 2003; pp. 99–119.

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