IXER 60N120

NPT3 IGBT IC25 = 95 A

in ISOPLUS 247TM VCES = 1200 V
VCE(sat) typ. = 2.1 V

C ISOPLUS 247TM
E153432
G
G
C
E
E Isolated Backside

G = Gate C = Collector E = Emitter

IGBT Features

t
Symbol Conditions Maximum Ratings • NPT3 IGBT
- low saturation voltage
VCES TVJ = 25°C to 150°C 1200

u
V - positive temperature coefficient for
VGES ± 20 V easy paralleling
- fast switching
-o
IC25 TC = 25°C 95 A - short tail current for optimized
IC90 TC = 90°C 60 A performance in resonant circuits
ICM VGE = ±15 V; RG = 22 Ω; TVJ = 125°C 100 A
• ISOPLUS 247TM package
VCEK RBSOA, Clamped inductive load; L = 100 µH VCES
- isolated back surface
e

tSC VCE = 900 V; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C 10 µs - low coupling capacity between pins
(SCSOA) non-repetitive and heatsink
- high reliability
s

Ptot TC = 25°C 375 W - industry standard outline

a

Applications
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified) • single switches
h

min. typ. max. and with complementary free wheeling

diodes
VCE(sat) IC = 60 A; VGE = 15 V; TVJ = 25°C 2.1 2.7 V
• choppers
TVJ = 125°C 2.5 V
• phaselegs, H bridges, three phase
p

VGE(th) IC = 2 mA; VGE = VCE 4.5 6.5 V bridges e.g. for

- power supplies, UPS
ICES VCE = VCES; VGE = 0 V; TVJ = 25°C 0.1 mA - AC, DC and SR drives
TVJ = 125°C 0.1 mA - induction heating
IGES VCE = 0 V; VGE = ± 20 V 200 nA
td(on) 80 ns
tr 50 ns
Inductive load, TVJ = 125°C
td(off) 680 ns
VCE = 600 V; IC = 60 A
tf 30 ns
VGE = ±15 V; RG = 22 Ω
Eon 7.2 mJ
Eoff 4.8 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 3.8 nF
QGon VCE = 600 V; VGE = 15 V; IC = 50 A 350 nC
RthJC 0.33 K/W
RthJH 0.66 K/W
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 IXER 60N120

Component Equivalent Circuits for Simulation

Symbol Conditions Maximum Ratings Conduction
TVJ -55...+150 °C
Tstg -55...+125 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~
FC mounting force with clip 20...120 N
IGBT (typ. at VGE = 15 V; TJ = 125°C)
Symbol Conditions Characteristic Values V0 = 0.99 V; R0 = 25 mΩ
min. typ. max.
Cp coupling capacity between shorted 30 pF Thermal Response
pins and mounting tab in the case
Weight 6 g

t
IGBT (typ.)
Cth1 = 0.13 J/K; Rth1 = 0.06 K/W
Cth2 = 0.32 J/K; Rth2 = 0.27 K/W

u
-o
ISOPLUS247TM OUTLINE
e
s
a
h
p

The convex bow of substrate is typ. < 0.04 mm over plastic surface level
of device bottom side
This drawing will meet all dimensions requirement of JEDEC outline
TO-247 AD except screw hole and except Lmax.
0644

© 2006 IXYS All rights reserved 2-4

 IXER 60N120

120 120 VGE = 17 V 15 V 13 V

VGE = 17 V 15 V 13 V
A A
11 V
100 100
11 V
IC IC
80 80

60 60
9V
9V
40 40

20 20
TVJ = 25°C TVJ = 125°C
0 0
0 1 2 3 V 4 0 1 2 3 V 4
VCE VCE

Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics

t
160 20

u
VCE = 20 V
A V
120 15
-o
IC VGE

80 10
e

40 TVJ = 125°C 5
s

VCE = 600 V
TVJ = 25°C IC = 50 A
0 0
a

4 6 8 10 12 V 14 0 100 200 300 400 nC 500

VGE QG
h

Fig. 3 Typ. transfer characteristics Fig. 4 Typ. turn on gate charge

p

0644

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 IXER 60N120

20 100 8 800
td(on)
mJ ns
90
mJ ns
16 80 td(off)

Eoff 6 600
Eon 70 t t
tr
12 60
VCE = 600 V
50 4 VGE = ±15 V 400
8 VCE = 600 V 40 RG = 22 Ω
VGE = ±15 V TVJ = 125°C
30
RG = 22 Ω 2 Eoff
200
4 TVJ = 125°C
20
Eon
10
tf
0 0 0 0
0 20 40 60 80 100 A 120 20 40 60 80 100 A
IC IC

Fig. 5 Typ. turn on energy and switching Fig. 6 Typ. turn off energy and switching
times versus collector current times versus collector current

15.0 12

t
300 1200
VCE = 600 V ns
mJ VCE = 600 V td(on) ns mJ td(off)
VGE = ±15 V
12.5 VGE = ±15 V 250 10 1000
IC = 50 A

u
Eon IC = 50 A Eoff
TVJ = 125°C t TVJ = 125°C t
10.0 200 8 800
-o
7.5 150 6 600
Eon
tr
5.0 100 4 Eoff
400
e

2.5 50 2 200
tf
0.0 0 0 0
s

0 20 40 60 80 100 Ω 120 0 20 40 60 80 100 Ω 120

RG RG
a

Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
h

120 1
A
K/W
p

100
0.1
ICM
80 ZthJC

60 0.01

40 single pulse
0.001
20 RG = 22 Ω
TVJ = 125°C
IXER60N120
0 0.0001
0 200 400 600 800 1000 1200 1400 V 0.0001 0.001 0.01 0.1 1 s 10
VCE t

Fig. 9 Reverse biased safe operating area Fig. 10 Typ. transient thermal impedance
RBSOA
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