4N39

PHOTO SCR OPTOCOUPLER

FEATURES
Package Dimensions in Inches (mm)
• Turn On Current (IFT), 5.0 mA Typical
• Gate Trigger Current (IGT), 20 mA
• Surge Anode Current, 10 Amp Pin One ID.
3 2 1
• Blocking Voltage, 200 VACPK Anode 1 6 Gate
• Gate Trigger Voltage (VGT), 0.6 Volt .248 (6.30)
• Isolation Voltage, 5300 VACRMS .256 (6.50) Cathode 2 5 Anode
• Solid State Reliability
4 5 6 NC 3 4 Cathode
• Standard DIP Package
• Underwriters Lab File #E52744 .335 (8.50)
.343 (8.70)
.300 (7.62)
DESCRIPTION .039 typ.
(1.00)
The 4N39 is an optically coupled SCR with a Gal- min.
.130 (3.30)
lium Arsenide infrared emitter and a silicon photo .150 (3.81)
SCR sensor. Switching can be achieved while 4° 18° typ.
typ. .110 (2.79)
maintaining a high degree of isolation between .020 (.051) min. .150 (3.81)
triggering and load circuits. The 4N39 can be used .010 (.25)
.031 (0.80) .014 (.35)
in SCR triac and solid state relay applications .018 (0.45) .035 (0.90)
.022 (0.55) .300 (7.62)
where high blocking voltages and low input current
.100 (2.54) typ. .347 (8.82)
sensitivity are required.

Maximum Ratings Characteristics (TA=25°C)

Emitter Sym- Min. Typ Max Unit Condition
bol . .
Peak Reverse Voltage ....................................6.0 V
Peak Forward Current Emitter
(100 µs, 1% Duty Cycle)............................. 1.0 A Forward Voltage VF 1.2 1.5 V IF=20 mA
Continuous Forward Current ........................ 60 mA Reverse Current IR 10 µA VR=5 V
Power Dissipation at 25°C..........................100 mW
Detector
Derate Linearly from 50°C .........................2 mW/°C
Detector Forward Blocking VDM 200 V RGK=10 KΩ
Voltage TA=100°C
Reverse Gate Voltage .....................................6.0 V Id=150 µA
Anode Peak Blocking Voltage .......................200 V Reverse Blocking VRM 200 V
Voltage
Peak Reverse Gate Voltage ...............................6 V
Anode Current ............................................ 300 mA On-state Voltage VTM 1.2 V ITM=300 mA
Surge Anode Current (100 µs duration) .......... 10 A Holding Current IH 200 µA RGK=27 KΩ
Surge Gate Current (5 ms duration)........... 100 mA VFX=50 V
Power Dissipation, 25°C ambient ..............400 mW Gate Trigger VGT 0.6 1.0 V VFX=100 V
Derate Linearly from 25°C .........................8 mW/°C Voltage RGK=27 KΩ
Package RL=10 KΩ
Isolation Test Voltage (1 sec.) .......... 5300 VACRMS Forward Leakage IDM 50 µA RGK=10 KΩ
Isolation Resistance Current VRX=200 V
VIO=500 V, TA=25°C ............................... ≥1012 Ω IF=0,
VIO=500 V, TA=100°C ............................. ≥1011 Ω TA=100°C
Total Package Dissipation ..........................450 mW Reverse Leakage IRM 50 µA RGK=27 KΩ
Derate Linearly from 50°C .........................9 mW/°C Current VRX=200 V
Operating Temperature ................–55°C to +100°C IF=0,
TA=100°C
Storage Temperature....................–55°C to +150°C
Soldering Temperature (10 s.).......................260°C Package
Turn-0n Current IFT 15 30 mA VFX=50 V
RGK=10 KΩ
8 14 VFX=100 V
RGK=27 KΩ
Isolation Capaci- 2 pF f=1 MHz
tance

5–36