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CH1105 MATERIALS SCIENCE FOR CHEMICAL ENGINEERS
TUTORIAL 2
Q1.
(a) The upper temperature limit of extrinsic behavior for an Al‐doped Ge is 100 C with an extrinsic
conductivity of 60 (Ω‐m)‐1. Given density of Ge is 5.32 g/cm3 and molecular weight of Al is 26.98
g/mol, calculate:
i. the level of aluminum doping in ppb by wt
ii. the upper temperature for saturation range
iii. the extrinsic conductivity at 300K
Plot a graph showing the effect of temperature variation on the conductivity of Al‐doped Ge.
(b) How would you expect the increase in temperature to influence the operation of p‐n junction
rectifiers and transistors?
Q2.
(a) When the element Arsenic is added into the semiconductor ZnTe, will it act as a donor or an
acceptor? Explain your answer (hint: refer to the periodic table)
(d) How about when the element Selenium is added into the semiconductor ZnTe?
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CH1105 Semester 1 2011‐2012
Q3.
(a) Design a N‐type semiconductor based on Si that allows a constant conductivity of 25 (Ωm)‐1
at room temperature.
(b) Silicon carbide (SiC) is a ceramic with semiconducting characteristics of 3.02 eV. What is the
advantage of using SiC over Si as a semiconducting material?
Q4.
A pn‐junction is formed at the interface of a p‐ and n‐type semiconductor.
(a) Using a diagram, describe the movement of majority carriers in a pn junction diode at
equilibrium.
(b) What is the depletion region of a pn junction?
(c) Discuss the two opposing force at the depletion zone.
(d) Plot the charge density, the electric field and the voltage under the junction.
Q5
A coil of wire 0.25 m long and having 400 turns carries a current of 15 A.
(a) What is the magnitude of the magnetic field strength H?
(b) Compute the flux density B if the coil is in a vacuum.
(c) Compute the flux density inside a bar of chromium that is positioned within the coil. The
susceptibility for chromium is 3.13 × 10‐4.
(d) Compute the magnitude of the magnetization M.
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