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October 2009
ISL9R860P2, ISL9R860S3ST
8A, 600V Stealth™ Diode
General Description Features
The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are • Soft Recovery . . . . . . . . . . . . . . . . . . . tb / ta > 2.5
Stealth™ diodes optimized for low loss performance in • Fast Recovery . . . . . . . . . . . . . . . . . . . . trr < 25ns
high frequency hard switched applications. The
Stealth™ family exhibits low reverse recovery current • Operating Temperature . . . . . . . . . . . . . . . 175oC
(IRRM) and exceptionally soft recovery under typical
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V
operating conditions.
This device is intended for use as a free wheeling or • Avalanche Energy Rated
boost diode in power supplies and other power Applications
switching applications. The low IRRM and short ta phase
reduce loss in switching transistors. The soft recovery • Switch Mode Power Supplies
minimizes ringing, expanding the range of conditions • Hard Switched PFC Boost Diode
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the • UPS Free Wheeling Diode
Stealth™ diode with an SMPS IGBT to provide the
• Motor Drive FWD
most efficient and highest power density design at
lower cost. • SMPS FWD
Formerly developmental type TA49409. • Snubber Diode
Package Symbol
JEDEC TO-220AC JEDEC TO-263AB
K
ANODE CATHODE
CATHODE CATHODE (FLANGE)
(FLANGE)
N/C
A
ANODE
On State Characteristics
VF Instantaneous Forward Voltage IF = 8A TC = 25°C - 2.0 2.4 V
TC = 125°C - 1.6 2.0 V
Dynamic Characteristics
CJ Junction Capacitance VR = 10V, IF = 0A - 30 - pF
Switching Characteristics
trr Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 18 25 ns
IF = 8A, dIF/dt = 100A/µs, VR = 30V - 21 30 ns
trr Reverse Recovery Time IF = 8A, - 28 - ns
IRRM Maximum Reverse Recovery Current dIF/dt = 200A/µs, - 3.2 - A
QRR Reverse Recovery Charge VR = 390V, TC = 25°C - 50 - nC
trr Reverse Recovery Time IF = 8A, - 77 - ns
S Softness Factor (tb/ta) dIF/dt = 200A/µs, - 3.7 -
IRRM Maximum Reverse Recovery Current VR = 390V, - 3.4 - A
TC = 125°C
QRR Reverse Recovery Charge - 150 - nC
trr Reverse Recovery Time IF = 8A, - 53 - ns
S Softness Factor (tb/ta) dIF/dt = 600A/µs, - 2.5 -
IRRM Maximum Reverse Recovery Current VR = 390V, - 6.5 - A
TC = 125°C
QRR Reverse Recovery Charge 195 - nC
dIM/dt Maximum di/dt during tb - 500 - A/µs
Thermal Characteristics
RθJC Thermal Resistance Junction to Case - - 1.75 °C/W
RθJA Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W
RθJA Thermal Resistance Junction to Ambient TO-263 62 °C/W
150oC
12
25oC
10 10
125oC
125oC
8
100oC
6 100oC
1
4
25oC
2
0 0.1
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 100 200 300 400 500 600
Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage
80 90
VR = 390V, TJ = 125°C VR = 390V, TJ = 125°C
70 80
tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs tb AT IF = 16A, 8A, 4A
70
60
t, RECOVERY TIMES (ns)
60
50
50
40
40
30
30
20
20
10
10
ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs ta AT IF = 16A, 8A, 4A
0 0
0 2 4 6 8 10 12 14 16
100 200 300 400 500 600 700 800 900 1000
IF, FORWARD CURRENT (A) dIF /dt, CURRENT RATE OF CHANGE (A/µs)
14
IRRM , MAX REVERSE RECOVERY CURRENT (A)
IRRM , MAX REVERSE RECOVERY CURRENT (A)
11
dIF/dt = 800A/µs VR = 390V, TJ = 125°C
VR = 390V, TJ = 125°C
10 12
9
10 IF = 16A
8
dIF/dt = 500A/µs IF = 8A
8
7
6 6 IF = 4A
5
dIF/dt = 200A/µs 4
4
2
3
2 0
0 2 4 6 8 10 12 14 16 100 200 300 400 500 600 700 800 900 1000
IF, FORWARD CURRENT (A) dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Maximum Reverse Recovery Current vs Figure 6. Maximum Reverse Recovery Current vs
Forward Current dIF/dt
250
4 IF = 16A
IF = 8A 200 IF = 8A
3
150
IF = 4A IF = 4A
2
100
1 50
100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000
dIF /dt, CURRENT RATE OF CHANGE (A/µs) dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7. Reverse Recovery Softness Factor vs dIF/dt Figure 8. Reverse Recovery Charge vs dIF/dt
1200
10
IF(AV), AVERAGE FORWARD CURRENT (A)
1000
CJ , JUNCTION CAPACITANCE (pF)
800
6
600
4
400
2
200
0
140 145 150 155 160 165 170 175
0
0.1 1 10 100
TC, CASE TEMPERATURE (oC)
VR , REVERSE VOLTAGE (V)
Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. DC Current Derating Curve
0.02
ZθJA, NORMALIZED
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE
PEAK TJ = PDM x ZθJA x RθJA + TA
0.01
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION (s)
t2
Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions
I = 1A
L = 40mH
R < 0.1Ω
VDD = 50V
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL
L R
CURRENT +
SENSE IL IL
Q1 VDD
I V
DUT -
t0 t1 t2 t
Figure 14. Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage
Waveforms
TO-220AC
Dimensions in Millimeters
ISL9R860P2, ISL9R860S3ST
Mechanical Dimensions
TO-263AB
10.67 -A-
9.65 12.70
1.68
4 1.00
9.45
9.65
8.38
10.00
1.78 MAX (6.40)
2
3.80
1 3
-B-
4.83
4.06
6.22 MIN
1.65
1.14
4 6.86 MIN
15.88
14.61
SEE
DETAIL A
3 1
0.10 B
2.79 8
0.25 MAX 1.78 0
(5.38)
SEATING
PLANE Dimensions in Millimeters
DETAIL A, ROTATED 90
SCALE: 2X
ISL9R860P2, ISL9R860S3ST
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™ FPS™ PowerTrench® The Power Franchise®
Auto-SPM™ F-PFS™ PowerXS™ ®
Build it Now™ FRFET® Programmable Active Droop™
SM ® tm
FETBench™ ®* XS™
FlashWriter® * PDP SPM™
Power-SPM™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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