IPB025N10N3 G

™
"%&$!"# 3 Power-Transistor
Product Summary
Features
V 9H )(( J
P ' 3 81>>5< >? A=1<<5E5<
R 9H"[Z#$YMc *&- Y"
P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C ( & 
I9 )0( 6
P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z#

P " 978 3 DAA5>C3 1@12 9<9CH

P   S ? @5A1C9>7 C5=@5A1CDA5

P ) 2 6A55 <514 @<1C9

>7 + ? " , 3 ? =@<9
1>C
)#
P * D1<96954 13 3 ? A49>7 C? $     6? AC1A75C1@@<9
3 1C9? >

P" 1<? 75> 6A55 13 3 ? A49

>7 C? #       

Type #)     '  '  !

Package E=%ID*.+%/

Marking (*-C)(C

Maximum ratings, 1CT V   S  D><5BB? C85AF9B5 B@53 9

6954

Parameter Symbol Conditions Value Unit

*#
 ? >C9>D? DB4A19> 3 DAA5>C I9 T 8   S )0( 6

T 8   S )./

) D<B54 4A19> 3 DAA5>C*# I 9$\`X^Q T 8   S /*(

 E1<1>3 85 5>5A7H B9
>7<5 @D<B5 E 6H I 9     R =H   " )((( Y@

!1C5 B? DA3 5 E? <C175 V =H p*( J

) ? F5A49BB9@1C9? > P _[_ T 8   S +(( K

( @5A1C9>7 1>4 BC? A175 C5=@5A1CDA5 T V T ^_S  

  S

#  3 <9=1C93 3 1C57? AH  #' #          

)#
$ , -   1>4 $  ,   
*#
, 55 697DA5 

+ 5E

  @175     
 IPB025N10N3 G

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

-85A=1<A5B9
BC1>3 5 :D>3 C9
? > 3 1B5 R _T@8 % % (&- A'K

-85A=1<A5B9
BC1>3 5 R _T@6 =9>9
=1<6? ? C@A9>C 

:D>3 C9? > 1=2 9

5>C  3 = * 3 ? ? <9
>7 1A51+# % % ,(

Electrical characteristics, 1CT V   S  D><5BB? C85AF9B5 B@53 96954

Static characteristics

 A19> B? DA3 5 2 A51;4? F> E? <C175 V "7G#9HH V =H  .  I 9 = )(( % % J

!1C5 C8A5B8? <4 E? <C175 V =H"_T# V 9H4V =H I 9    U  * *&/ +&-

V 9H   .  V =H  . 
05A? 71C5 E? <C175 4A19> 3 DAA5>C I 9HH % (&) ) q6
T V   S

V 9H   .  V =H  . 
% )( )((
T V   S

!1C5 B? DA3 5 <51;175 3 DAA5>C I =HH V =H   .  V 9H  . % ) )(( Z6

 A19> B? DA3 5 ? > BC1C5 A5B9BC1>3 5 R 9H"[Z# V =H  .  I 9    % *&( *&- Y"
V =H  .  I 9    % *&- ,&,

!1C5 A5B9BC1>3 5 R= % )&1 % "

fV 9Hf5*fI 9fR 9H"[Z#YMc

I]MZ^O[ZP`O_MZOQ g R^ )(( *(( % H
I 9   

+#
 5E935 ? >   == G   == G
 == 5@? GH )   +  F9C8  3 =* ? >5 <1H5A   U = C893; 3 ? @@5A1A51 6? A4A19>
3 ? >>53 C9? >
)   9BE5AC931<9> BC9<<19A

+ 5E

  @175      
 IPB025N10N3 G

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

#>@DC3 1@13 9C1>3 5 C U^^ % )))(( ),0(( \<

V =H  .  V 9H   . 
( DC@DC3 1@13 9
C1>3 5 C [^^ % )1,( *-0(
f & " I
+ 5E5AB5 CA1>B65A3 1@13 9C1>3 5 C ]^^ % .1 %

-DA> ? > 45<1H C9=5 t P"[Z# % +, % Z^

+ 9B5 C9
=5 t] V 99   .  V =H  .  % -0 %

-DA> ? 6645<1H C9=5 t P"[RR# I 9     R =

 " % 0, %

1<<C9
=5 tR % *0 %

BC93B,#
!1C5  81AS5  81A13 C5A9

!1C5 C? B? DA3 5 3 81A75 Q S^ % ,0 ., Z8

!1C5 C? 4A19> 3 81A75 Q SP % */ %

V 99   .  I 9    
, F9C3 89
>7 3 81A75 Q ^b % ,* %
V =H  C?  .
!1C5 3 81A75 C? C1< QS % )-- *(.

!1C5 @<1C51D E? <C175 V \XM_QM` % ,&+ % J

( DC@DC3 81A75 Q [^^ V 99   .  V =H  . % *(- */+ Z8

Reverse Diode

 9? 45 3 ? >C9>? DB6? AF1A4 3 DAA5>C IH % % )0( 6

T 8   S
 9? 45 @D<B5 3 DAA5>C I H$\`X^Q % % /*(

V =H  .  I <    
 9? 45 6? AF1A4 E? <C175 V H9 % ) )&* J
T V   S

+ 5E5AB5 A53 ? E5AH C9

=5 t ]] V G   .  I <4100A  % 0. % Z^

Q ]] Pi <'Pt     U B
+ 5E5AB5 A53 ? E5AH 3 81A75 % *+* % Z8

,#
, 55 697DA5  6? A71C5 3 81A75 @1A1=5C5A4569>9C9? >

+ 5E

  @175      
 IPB025N10N3 G

1 Power dissipation 2 Drain current

P _[_4R"T 8# I 94R"T 8 V =H"  .

350 200

180
300
160

250
140

120
200
P tot [W]

I D [A]
100
150
80

100 60

40
50
20

0 0
0 50 100 150 200 0 50 100 150 200
T C [°C] T C [°C]

3 Safe operating area 4 Max. transient thermal impedance

I 94R"V 9H T 8   S  D 4( Z _T@84R"t \#
@1A1=5C5A t \ @1A1=5C5A D 4t \'T

103 100
<9=9C54 2 H ? > BC1C5
UB
]Q^U^_MZOQ
 UB
 UB

102 (&-
=B
Z thJC [K/W]

 =B
I D [A]

(&*
1 -1
10 10
98
(&)

(&(-

100
(&(*

(&()

B9>7<5 @D<B5
10-1 10-2
10-1 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100
V DS [V] t p [s]

+ 5E

  @175      
 IPB025N10N3 G

5 Typ. output characteristics 6 Typ. drain-source on resistance

I 94R"V 9H T V   S R 9H"[Z#4R"I 9 T V   S
@1A1=5C5A V =H @1A1=5C5A V =H

300 6
 .  .

250 5

 . 
 .
 .

 .
 .
200 4

R DS(on) [m ]
I D [A]

150 3

 .


 . 
 .
100 2  .

50 1

0 0
0 1 2 0 40 80 120 160 200 240 280
V DS [V] I D [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I 94R"V =H JV 9Hf5*fI 9fR 9H"[Z#YMc g R^4R"I 9 T V   S
@1A1=5C5A T V

300 240

250 200

200 160
g fs [S]
I D [A]

150 120

100 80

  S

50 40
  S

0 0
0 2 4 6 0 40 80 120 160
V GS [V] I D [A]

+ 5E

  @175      
 IPB025N10N3 G

9 Drain-source on-state resistance 10 Typ. gate threshold voltage

R 9H"[Z#4R"T V I 9     V =H  . V =H"_T#4R"T V V =H4V 9H
@1A1=5C5A I 9

6 4

3.5
5

3
 U 
4
2.5
R DS(on) [m ]

V GS(th) [V]
 U
 
3 2

_d\
1.5
2

1
0.5

0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
T j [°C] T j [°C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C 4R"V 9H V =H  .  f  & " I I <4R"V H9#
@1A1=5C5A T V

105 103

  S    
8U^^
4
10
  S
102
8[^^
C [pF]

I F [A]

103

  S

101
8]^^
102
  S    

101 100
0 20 40 60 80 0 0.5 1 1.5 2
V DS [V] V SD [V]

+ 5E

  @175      
 IPB025N10N3 G

13 Avalanche characteristics 14 Typ. gate charge

I 6H4R"t 6J R =H   " V =H4R"Q SM_Q I 9    @D<B54

@1A1=5C5A T V"^_M]_# @1A1=5C5A V 99

1000 10

8
 .

100
  S  .
6

V GS [V]
I AS [A]

  S
 .

  S
4
10

1 0
1 10 100 1000 0 40 80 120 160
t AV [µs] Q gate [nC]

15 Drain-source breakdown voltage 16 Gate charge waveforms

V 7G"9HH#4R"T V I 9 =

110
V =H

Qg

105
V BR(DSS) [V]

100

V S ^"_T#

95

Q S "_T# Q ^b Q g ate

Q S^ Q SP
90
-60 -20 20 60 100 140 180
T j [°C]

+ 5E

  @175      
 IPB025N10N3 G

PG-TO263-3: Outline

+ 5E

  @175      
 IPB025N10N3 G

Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.

+ 5E

  @175