AP70T03GH/J

Pb Free Plating Product

Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement D BVDSS 30V

▼ Low Gate Charge RDS(ON) 9mΩ
▼ Fast Switching ID 60A
G
▼ RoHS Compliant
S

Description
The Advanced Power MOSFETs from APEC provide the GD
designer with the best combination of fast switching, S TO-252(H)
ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version G
D
(AP70T03GJ) are available for low-profile applications. S TO-251(J)

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
ID@TA=25℃ Continuous Drain Current, VGS @ 10V 60 A
ID@TA=100℃ Continuous Drain Current, VGS @ 10V 43 A
1
IDM Pulsed Drain Current 195 A
PD@TA=25℃ Total Power Dissipation 53 W
Linear Derating Factor 0.36 W/℃
TSTG Storage Temperature Range -55 to 175 ℃
TJ Operating Junction Temperature Range -55 to 175 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Thermal Resistance Junction-case Max. 2.8 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W

Data and specifications subject to change without notice 200823053-1/4

AP70T0G3H/J

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=33A - - 9 mΩ
VGS=4.5V, ID=20A - - 18 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs VDS=10V, ID=33A - 35 - S
o
IDSS Drain-Source Leakage Current (T j=25 C) VDS=30V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (T j=175 C) VDS=24V ,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS= ±20V - - ±100 nA
2
Qg Total Gate Charge ID=33A - 17 27 nC
Qgs Gate-Source Charge VDS=20V - 5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 10 - nC
Qoss Output Charge VDD=15V,VGS=0V - 13.5 22 nC
2
td(on) Turn-on Delay Time VDS=15V - 8 - ns
tr Rise Time ID=33A - 105 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 22 - ns
tf Fall Time RD=0.45Ω - 9 - ns
Ciss Input Capacitance VGS=0V - 1485 2400 pF
Coss Output Capacitance VDS=25V - 245 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 170 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=33A, VGS=0V - - 1.3 V
trr Reverse Recovery Time IS=20A, VGS=0V, - 27 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 20 - nC

Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.

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 AP70T03GH/J

200 120

o
T C =25 C 10V T C =175 o C 10V
8.0V 8.0V
150 90
6.0V
ID , Drain Current (A)

ID , Drain Current (A)

6.0V
100 60

50 V G =4.0V 30 V G =4.0V

0
0
0.0 1.5 3.0 4.5 0.0 1.5 3.0 4.5

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

60 2

I D =20A I D =33A
T C =25 ℃ V G =10V
1.6

40
Normalized RDS(ON)
RDS(ON) (mΩ )

1.2

20

0.8

0 0.4
0 4 8 12 16 -50 25 100 175

V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
1000 2.5

100 2
VGS(th) (V)

T j =175 o C T j =25 o C
IS(A)

10 1.5

1 1

0.1 0.5
0 0.5 1 1.5 -50 25 100 175

V SD , Source-to-Drain Voltage (V) o

T j , Junction Temperature ( C )

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

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AP70T03GH/J

12 10000
f=1.0MHz

I D =33A
VGS , Gate to Source Voltage (V)

9
V DS =16V
V DS =20V
V DS =24V

C (pF)
C iss
6 1000

3
C oss
C rss

0 100
0 5 10 15 20 25 30 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1000 1
Normalized Thermal Response (Rthjc)

Duty factor = 0.5

10us
100 0.2

0.1
100us
ID (A)

0.1
0.05

0.02 PDM
10 1ms t
0.01

Single Pulse T

T C =25 Co 10ms
Duty Factor = t/T
Single Pulse 100ms Peak Tj = PDM x Rthjc + T C

DC
1 0.01
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance

VDS VG
90%
QG
4.5V
QGS QGD

10%
VGS

td(on) tr td(off) t Q
f Charge

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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