MBR30H100CTG,

MBRF30H100CTG

Switch‐mode
Power Rectifier
100 V, 30 A
www.onsemi.com
Features and Benefits
• Low Forward Voltage: 0.67 V @ 125°C SCHOTTKY BARRIER
• Low Power Loss/High Efficiency RECTIFIER
• High Surge Capacity 30 AMPERES
• 175°C Operating Junction Temperature 100 VOLTS
• 30 A Total (15 A Per Diode Leg)
• These are Pb−Free Devices 1
2, 4
Applications 3
• Power Supply − Output Rectification
• Power Management MARKING
• Instrumentation DIAGRAMS
4
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in TO−220
• Weight: 1.9 Grams (Approximately) CASE 221A AYWW
• Finish: All External Surfaces Corrosion Resistant and Terminal STYLE 6 B30H100G
AKA
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 1
2
260°C Max. for 10 Seconds 3
• ESD Rating: Human Body Model = 3B
Machine Model = C

TO−220 FULLPAK AYWW

CASE 221AH B30H100G
AKA

1
2
3

A = Assembly Location
Y = Year
WW = Work Week
B30H100 = Device Code
G = Pb−Free Package
AKA = Polarity Designator

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

© Semiconductor Components Industries, LLC, 2016 1 Publication Order Number:

July, 2016 − Rev. 6 MBR30H100CT/D
 MBR30H100CTG, MBRF30H100CTG

MAXIMUM RATINGS (Per Diode Leg)

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 100 V
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
Average Rectified Forward Current IF(AV) A
(TC = 156°C) Per Diode 15
Per Device 30
Peak Repetitive Forward Current IFM 30 A
(Square Wave, 20 kHz, TC = 151°C)
Nonrepetitive Peak Surge Current IFSM 250 A
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature (Note 1) TJ +175 °C
Storage Temperature Tstg *65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Controlled Avalanche Energy (see test conditions in Figures 13 and 14) WAVAL 200 mJ
ESD Ratings: Machine Model = C > 400 V
Human Body Model = 3B > 8000
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance °C/W
(MBR30H100CTG) − Junction-to-Case RqJC 2.0
− Junction-to-Ambient RqJA 60
(MBRF30H100CTG) − Junction-to-Case RqJC 4.2
− Junction-to-Ambient RqJA 75

ELECTRICAL CHARACTERISTICS (Per Diode Leg)

Characteristic Symbol Min Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 2) vF V
(iF = 15 A, TJ = 25°C) − 0.76 0.80
(iF = 15 A, TJ = 125°C) − 0.64 0.67
(iF = 30 A, TJ = 25°C) − 0.88 0.93
(iF = 30 A, TJ = 125°C) − 0.76 0.80
Maximum Instantaneous Reverse Current (Note 2) iR mA
(Rated DC Voltage, TJ = 125°C) − 1.1 6.0
(Rated DC Voltage, TJ = 25°C) − 0.0008 0.0045
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

ORDERING INFORMATION
Device Order Number Package Type Shipping†
MBR30H100CTG TO−220 50 Units / Rail
(Pb−Free)

MBRF30H100CTG TO−220FP 50 Units / Rail

(Pb−Free)

www.onsemi.com
2
 MBR30H100CTG, MBRF30H100CTG

i , INSTANTANEOUS FORWARD CURRENT (AMPS)

i , INSTANTANEOUS FORWARD CURRENT (AMPS)

100 100

175°C 175°C
10 10

TJ = 150°C TJ = 150°C
1.0 125°C 1.0 125°C

25°C 25°C
0.1 0.1
F

F
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

IR, MAXIMUM REVERSE CURRENT (AMPS)

1E−01 1E−01
TJ = 150°C
IR, REVERSE CURRENT (AMPS)

1E−02 1E−02
TJ = 150°C
1E−03 1E−03 TJ = 125°C
TJ = 125°C
1E−04 1E−04

1E−05 1E−05
TJ = 25°C
1E−06 TJ = 25°C 1E−06

1E−07 1E−07

1E−08 1E−08
0 20 40 60 80 100 0 20 40 60 80 100
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

26
, AVERAGE FORWARD CURRENT (AMPS)

26
, AVERAGE FORWARD CURRENT (AMPS)

dc 24 RATED VOLTAGE APPLIED

24
22 22 RqJA = 16° C/W
20 20 RqJA = 60° C/W
18 SQUARE WAVE 18 (NO HEATSINK)
16 16
14 14
12 12 dc
10 10
8.0 SQUARE WAVE
8.0
6.0 6.0 dc
4.0 4.0
F (AV)

F (AV)

2.0 2.0
0 0
I

130 135 140 145 150 155 160 165 170 175 180 0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (C°) TA, AMBIENT TEMPERATURE (°C)

Figure 5. Current Derating, Case Per Leg Figure 6. Current Derating, Ambient Per Leg

www.onsemi.com
3
 MBR30H100CTG, MBRF30H100CTG

, AVERAGE FORWARD POWER DISSIPATION (WATTS) 30 10000

28 TJ = 175°C TJ = 25°C
26
SQUARE WAVE
24

C, CAPACITANCE (pF)
22
20 1000
18
16 dc
14
12
10 100
8
6
4
2
0 10
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 20 40 60 80 100
F (AV)

IF(AV), AVERAGE FORWARD CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS)

P

Figure 7. Forward Power Dissipation Figure 8. Capacitance

100
R(t), TRANSIENT THERMAL RESISTANCE

D = 0.5

10
0.2
0.1

1 0.05

0.01 P(pk)

0.1 t1
t2
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 9. Thermal Response Junction−to−Ambient for MBR30H100CT
R(t), TRANSIENT THERMAL RESISTANCE

10

D = 0.5
1

0.2
0.1
0.05 P(pk)
0.1
0.01 t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 10. Thermal Response Junction−to−Case for MBR30H100CT

www.onsemi.com
4
 MBR30H100CTG, MBRF30H100CTG

10
R(t), TRANSIENT THERMAL RESISTANCE
D = 0.5
0.2
1.0
0.1
0.05
0.02
0.1 P(pk) ZqJC(t) = r(t) RqJC
0.01 RqJC = 1.6°C/W MAX
D CURVES APPLY FOR POWER
0.01 PULSE TRAIN SHOWN
SINGLE PULSE t1
t2 READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
DUTY CYCLE, D = t1/t2
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000

t1, TIME (sec)

Figure 11. Thermal Response Junction−to−Case for MBRF30H100CT

100
R(t), TRANSIENT THERMAL RESISTANCE

D = 0.5
0.2
10 0.1
0.05
0.02
1.0
0.01
P(pk) ZqJC(t) = r(t) RqJC
0.1 RqJC = 1.6°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.01 t1
SINGLE PULSE t2 READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
DUTY CYCLE, D = t1/t2
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000

t1, TIME (sec)

Figure 12. Thermal Response Junction−to−Ambient for MBRF30H100CT

www.onsemi.com
5
 MBR30H100CTG, MBRF30H100CTG

+VDD

IL 10 mH COIL

VD BVDUT

MERCURY ID
SWITCH

IL ID
DUT
S1
VDD

t0 t1 t2 t

Figure 13. Test Circuit Figure 14. Current−Voltage Waveforms

The unclamped inductive switching circuit shown in
Figure 13 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
EQUATION (1):

ǒ Ǔ
BVDUT and the diode begins to conduct the full load current BV
2 DUT
which now starts to decay linearly through the diode, and W [ 1 LI LPK
AVAL 2 BV V
goes to zero at t2. DUT DD
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is EQUATION (2):
equal to the energy stored in the inductor plus a finite amount
2
of energy from the VDD power supply while the diode is in W [ 1 LI LPK
AVAL 2
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive

www.onsemi.com
6
 MBR30H100CTG, MBRF30H100CTG

PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AH

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T ALLOWED.
S
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
1 2 3 U D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.024 0.36 0.61
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
D Z --- 0.080 --- 2.04
N
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE

www.onsemi.com
7
 MBR30H100CTG, MBRF30H100CTG

PACKAGE DIMENSIONS

TO−220 FULLPACK, 3−LEAD

CASE 221AH
ISSUE F

A SEATING NOTES:
B PLANE 1. DIMENSIONING AND TOLERANCING PER ASME
E Y14.5M, 1994.
P A 2. CONTROLLING DIMENSION: MILLIMETERS.
E/2 H1 3. CONTOUR UNCONTROLLED IN THIS AREA.
0.14 M B A M A1 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE
Q MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.
D 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
C LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.
1 2 3 NOTE 3 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY
MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1
AND H1 FOR MANUFACTURING PURPOSES.
L L1 MILLIMETERS
DIM MIN MAX
A 4.30 4.70
A1 2.50 2.90
3X b c A2 2.50 2.90
b 0.54 0.84
3X b2 0.25 M B A M C A2 b2 1.10 1.40
c 0.49 0.79
e SIDE VIEW D 14.70 15.30
FRONT VIEW E 9.70 10.30
e 2.54 BSC
H1 6.60 7.10
L 12.50 14.73
L1 --- 2.80
P 3.00 3.40
SECTION D−D Q 2.80 3.20

A
NOTE 6
NOTE 6

H1

D D

A SECTION A−A
ALTERNATE CONSTRUCTION

ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative

www.onsemi.com MBR30H100CT/D
8