AO4407A

P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO4407A/L uses advanced trench technology to VDS = -30V

provide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -20V)
with a 25V gate rating. This device is suitable for use as RDS(ON) < 11mΩ (VGS = -20V)
a load switch or in PWM applications. RDS(ON) < 13mΩ (VGS = -10V)
AO4407A and AO4407AL are electrically identical. RDS(ON) < 38mΩ (VGS = -5V)
-RoHS Compliant
-AO4407AL is Halogen Free
UIS TESTED!
RG, CISS, COSS, CRSS TESTED!

D
SOIC-8
Top View

S D
S D
S D
G
G D
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TA=25°C -12
Current A TA=70°C ID -10
B A
Pulsed Drain Current IDM -60
Avalanche Current G IAR -26
Repetitive avalanche energy L=0.3mH G EAR 101 mJ
A
TA=25°C 3.1
Power Dissipation PD W
TA=70°C 2.0
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 32 40 °C/W
RθJA
Maximum Junction-to-Ambient A Steady State 60 75 °C/W
Maximum Junction-to-Lead C Steady State RθJL 17 24 °C/W

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 AO4407A

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID = -250µA, VGS = 0V -30 V
VDS = -30V, VGS = 0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ = 55°C -5
IGSS Gate-Body leakage current VDS = 0V, VGS = ±25V ±100 nA
VGS(th) Gate Threshold Voltage VDS = VGS ID = -250µA -1.7 -2.3 -3 V
ID(ON) On state drain current VGS = -10V, VDS = -5V -60 A
VGS = -20V, ID = -12A 8.5 11
TJ=125°C 11.5 15
RDS(ON) Static Drain-Source On-Resistance mΩ
VGS = -10V, ID = -12A 10 13
VGS = -5V, ID = -10A 27 38
gFS Forward Transconductance VDS = -5V, ID = -10A 21 S
VSD Diode Forward Voltage IS = -1A,VGS = 0V -0.7 -1 V
IS Maximum Body-Diode Continuous Current -3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2060 2600 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 370 pF
Crss Reverse Transfer Capacitance 295 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2.4 3.6 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 30 39 nC
Qgs Gate Source Charge VGS=-10V, VDS=-15V, ID=-12A 4.6 nC
Qgd Gate Drain Charge 10 nC
tD(on) Turn-On DelayTime 11 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=1.25Ω, 9.4 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 24 ns
tf Turn-Off Fall Time 12 ns
trr Body Diode Reverse Recovery Time IF=-12A, dI/dt=100A/µs 30 40 ns
Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs 22 nC
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep T j=25C.
Rev7: July 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

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 AO4407A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 80
-10V VDS= -5V
-6V

60 -5V 60
-ID (A)

-ID(A)
40 -4.5V 40

-4V 125°C
20 20
25°C
VGS= -3.5V

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

40 1.6
VGS=-20V
VGS=-5V ID=-12A
Normalized On-Resistance

30 1.4
VGS=-10V
RDS(ON) (mΩ)

ID=-12A
20 1.2

VGS=-10V
VGS=-5V
10 1.0 ID=-10A

VGS=-20V
0 0.8
0 4 8 I12
F=-6.5A,16
dI/dt=100A/µs
20 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

30 1E+01
ID=-12A
1E+00
25
1E-01 125°C
RDS(ON) (mΩ)

20 1E-02
-IS (A)

125°C
1E-03
15 25°C
25°C 1E-04
10
1E-05

5 1E-06
3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VGS (Volts) -VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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 AO4407A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 3000

VDS=-15V 2500
8 Ciss
ID=-12A

Capacitance (pF)
2000
-VGS (Volts)

6
1500
4
1000 Coss

2
500
Crss
0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 1000
10µs TJ(Max)=150°C
TA=25°C
10 100µs
100
1ms
-ID (Amps)

Power (W)

1 10ms
RDS(ON) limited
100ms
10
0.1 TJ(Max)=150°C
10s
TA=25°C
DC
0.01
1
0.1 1 10 100
-VDS (Volts) 0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-
Operating Area (Note E)
to-Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=75°C/W
Thermal Resistance

0.1
PD

0.01 Ton
Single Pulse T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)

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 AO4407A

Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs
Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs + Vdd
Vgs VDC I AR
Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Qrr = - Idt

DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ IRM
Vgs Vdd
VDC
Vdd
Ig
- Vds

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