COMPOUND:

Gallium Nitride (GaN)

Abstract
Scope
General properties of gallium nitride
(GaN)
Characterization tools
Screen printing process of gallium
nitride (GaN)
IV and CV characteristics of gallium nitride (GaN)
 To study the relationship between DC current
through an electronic device and the DC voltage
across its terminal using Gallium Nitride in I-V
Test.

To study the characterization semiconductor

material and structure parameters using Gallium
Nitride in C-V Test.
 Broadband Performance of GaN
Monolithic Switchmode Power
HEMTs
Conversion
Fig. 1. XRD pattern of synthesised GaN powder.
Fig. 2. SEM photographs of synthesised GaN material which consists of:
(a) hexagonal; (b) needle shaped crystals.
Fig. 3. Room temperature PL spectrum of synthesised GaN powder.
Fig. 4. Room temperature Raman spectrum of synthesised GaN powder
 XRD and Raman spectroscopy were investigated to
provide a better understanding of the crystal structure
of gallium oxynitrides prepared by ammonolysis of
oxide precursors.
The comparison of gallium oxynitride

XRD pattern

Raman spectroscopy
 The sensitive materials from gallium oxynitride
(GaON) were deposited by screen-printing technology
on alumina and sapphire substrates, resulting in layer
thicknesses of 10-20 mm.

As shown in Fig. 5 for gallium oxynitride (GaON) the

thick layers exhibit macroporosity allowing a good
diffusion of the gas into the sensitive layers.
 Expected Device: Gas sensor

The result for gas sensing measurement of gallium

oxynitride is shown in Figure 6: Electrical responses
of a “GaON” sensor (25 m thick) to 250 ppm ethanol
at 220, 260, 320 and 380 ◦C in: (a) humid (50% RH)
and (b) dry (0% RH) synthetic air.
 The sensor exhibits a strong signal towards ethanol
with a resistance decrease of approximately a
magnitude.

Additionaly to a short response time (t90<1min) the

signal recovery is complete after exposition to ethanol.

The sensor signal to CO is less strong. Still, the clean

slope, short response time (t90<2min) and complete
signal recovery encourages further studies.
 IV characteristics
 CV characteristics
 Figure 1: XRD pattern of GaN powder prepared by
ammonolysis (900 ◦C, 16 h) of β-Ga2O3.

Figure 2: XRD pattern of GaON(a) powder prepared

by ammonolysis (600 ◦C, 72 h) of NiGa2O4.

Figure 3: XRD pattern of GaON(b) powder prepared

by ammonolysis (800 ◦C, 10 h) of a citrate method-
derived precursor.
GaN XRD pattern
 Figure 4(a): Raman spectra obtained at room
temperature under excitation at 488 nm. Spectra were
vertically shifted for clarity.

Figure4 (b): Same as figure 4(a), expanded in the

region of GaN first-order Raman modes. Vertical lines
indicate the first-order Raman modes of hexagonal (h-
GaN) and cubic (c-GaN) phases of GaN.

Raman scattering for GaN

Figure 1: Home
Figure 3: Home
Figure 4: Home
Figure 5: Optical microscope photography of the
surface of a gallium oxynitride thick layer deposited by
screen-printing on sapphire substrate. Home
Figure 6: Home
Figure 7: Home
Figure 7: Home
 Homoepitaxy:

Is a kind of epitaxy (the deposition of a

crystalline overlayer on a crystalline
substrate, where the overlayer is in registry
with the substrate) performed with only one
material.
 Morphology:

The shape and size of particles making up the

object; direct relation between these
structures and material properties
(ductility, strength, reactivity, etc)
 Woven:

Is a cloth formed by weaving (is a method of

fabric production in which two distinct sets
of yarns or threads are interlaced at right
angles to form a fabric or cloth).
 mesh:

Mesh consists of semi-permeable barrier made

of connected strands of metal, fiber, or other
flexible/ductile material.
 stencil:

is a thin sheet of material, such as paper,

plastic, or metal, with letters or a design cut
from it, used to produce the letters or design
on an underlying surface by applying
pigment through the cut-out holes in the
material.
 :

Crystallizing with high degree

of stoichiometry, most can be obtained as
both n-type and p-type. Many have high
carrier mobilities and direct energy gaps,
making them useful for optoelectronics.
 :

Relative humidity is a term used to describe

the amount of water vapor in a mixture of
air and water vapor.