QUESTION 5

IMPATT DIODE
Construction
This is a high-power semiconductor diode, used in high frequency microwave applications. The
full form IMPATT is IMPact ionization Avalanche Transit Time diode.
The impatt diode is made of silicon as it is cheaper and easier to fabricate using epitaxial groth.
The gold alloy contact is used as it has a low ohmic and thermal resistance
The following figure shows the constructional details of an IMPATT diode.

Operation of IMPATT Diode

In Impatt diode extremely high voltage gradient is applied (400kv/cm) which a normal which a
normal p-n junction can't withstand. Such a high potential gradient, back-biasing the diode
causes a flow of minority carrier across the junction. The ac current is approx. 180 degrees out of
phase with the applied voltage this gives rise to negative conduction and oscillation is resonant
circuit.

A voltage gradient when applied to the IMPATT diode, results in a high current. A normal diode
will eventually breakdown by this. However, IMPATT diode is developed to withstand all this.
A high potential gradient is applied to back bias the diode and hence minority carriers flow
across the junction. Application of a RF AC voltage if superimposed on a high DC voltage, the
increased velocity of holes and electrons results in additional holes and electrons by thrashing
them out of the crystal structure by Impact ionization. If the original DC field applied was at the
threshold of developing this situation, then it leads to the avalanche current multiplication and
this process continues. This can be understood by the following figure.

Due to this effect, the current pulse takes a phase shift of 90°. However, instead of being there, it
moves towards cathode due to the reverse bias applied. The time taken for the pulse to reach
cathode depends upon the thickness of n+ layer, which is adjusted to make it 90° phase shift.
Now, a dynamic RF negative resistance is proved to exist. Hence, IMPATT diode acts both as an
oscillator and an amplifier.

Applications
 Following are the applications of IMPATT diode.
 Microwave oscillator
 Microwave generators
 Microwave Engineering Avalanche Transit Time Device
 Modulated output oscillator
 Receiver local oscillator
 Negative resistance amplifications
 Intrusion alarm networks (highQIMPATT)
 Police radar (highQIMPATT)
  Low power microwave transmitter (highQIMPATT)
 FM telecom transmitter (lowQIMPATT)
 CW Doppler radar transmitter (lowQIMPATT)

c) Explain in detail how the Impatt diode is used to achieve amplification and oscillation

IMPATT Oscillator circuits

IMPATT diodes are generally used at frequencies above about 3 GHz or more. It is found that
when a tuned circuit is applied along with a voltage around the breakdown voltage to the
IMPATT, and oscillation will occur.

Compared to other devices that use negative resistance and are available for operation at these
frequencies, the IMPATT is able to produce much higher levels of power. Typically figures of
ten or more watts may be obtained, dependent upon the device.

Typical IMPATT diode oscillator circuit

The IMPATT diode is driven from a supply through a current limiting resistor. The value of this
limits the current to the value required. The current is passed through an RF choke to isolate the
DC from the radio frequency signal. The IMPATT microwave diode is placed across the tuned
circuit. Typically the diode may be mounted in a waveguide cavity that provides the required
tuned circuit. Once the supply voltage is applied the circuit will oscillate.

One of the main drawbacks of the IMPATT diode in its operation is the generation of high levels
of phase noise as a result of the avalanche breakdown mechanism. It is found the devices based
around Gallium Arsenide technology are much better than those using Silicon. This results from
the much closer ionisation coefficients for holes and electrons.

IMPATT Amplifier circuits

d) Compare and contrast Impatt diodes with Trapatt diodes

Properties Impatt diode Trappat diode

Full name Impact Ionization Avalanche Trapped Plasma Avalanche
Transit Time Triggered Transit
Operating Frequency range 4GHz to 200GHz 1 to 3GHz
Principle of operation Avalanche multiplication Plasma avalanche
1Watt CW and > 400Watt 250 Watt at 3GHz , 550Watt
Output power pulsed at 1GHz
3% CW and 60% pulsed
below 1GHz, more efficient
and more powerful than the
Gunn diode type
Impatt diode Noise Figure:
30dB (worse than a Gunn 35% at 3GHz and 60% pulsed
Efficiency diode) at 1GHz
30dB (worse than Gunn Very high NF of the order of
Noise Figure diode) about 60dB
 · This microwave diode has
high power capability
compare to other diodes. · Higher efficiency than
· Output is reliable compared Impatt
to other diodes · Very low power dissipation
Advantages
· Not suitable for CW
operation due to high power
· High noise figure densities
· High operating current · High NF of about 60dB

· High spurious AM/FM · Upper frequency is limited

noise to below millimetre band
Disadvantages
· Voltage controlled Impatt
oscillators
· Low power radar system

· Injection locked amplifiers

· Used in microwave beacons
· Cavity stabilized Impatt · Instrument landing systems
diode oscillators • LO in radar
Applications

These diodes are similar in the following ways;

 They are both avalanche transit time devices; produce negative resistance at microwave
frequencies
 They both operate at high power and microwave frequencies

e) What are slow wave structures? For what purpose are the slow wave structures used in
microwave electronics
 Slow Wave Structure is a circuit or transmission path where the phase velocity is much
less than the speed of the light . It is a non-resonating device used to reduce the phase velocity of
the EM wave.
slow-wave structures are used in microwave tube to generate or to amplify the RF and
microwave signal at larger power over a wider bandwidth .These structures are used to reduce the
wave velocity in a certain direction so that the slow moving electrons of electron beam can interact
with the fast moving electromagnetic wave.

Following are the examples of SLOW WAVE structures.

f) Distinguish between O-type and M-type devices in microwave

O-type M-type

Also called linear beam tubes Aso called Crossed-field tubes

The electron beam travels in the same The dc magnetic field is perpendicular to the
direction as the magnetic field. The dc
dc electric field
Magnetic field is parallel to the dc Electric.

The electrons receive potential energy from the The electrons emitted by the cathodes are
dc beam voltage before they arrive in the accelerated by the electric field and gain
velocity but the greater their velocity, the more
their path is bent by the magnetic field.
 microwave interaction region this energy is
converted into their kinetic energy.

These are linear beam tubes i.e. the magnetic These are cross filed devices i.e. the d c
field is in parallel with the dc electric field. magnetic electric field are perpendicular to
each other
Examples include Traveling wave tubes and Examples include; Klystron, Magnetron and
Extended interaction oscillator
Cross filed amplifier

References

1. Microwave engineering 2nd edition by David M Pozar

2. Class notes
3. www.radio-electronics.com/.../antennas/parabolic/parabolic-reflector-antenna-theory.p...
4. http://swissen.in/impattdiode.php
5. https://www.elprocus.com/difference-impatt-diode-trapatt-diode-baritt-diode/