SOT223 PNP SILICON PLANAR

FZT751 HIGH PERFORMANCE TRANSISTOR FZT751

ISSUE 2 – FEBRUARY 1995
FEATURES
TYPICAL CHARACTERISTICS C
* 60 Volt VCEO
0.6 td
* 3 Amp continuous current
tr

tf ts
IB1 =IB2=IC/10
* Low saturation voltage
0.5 ns

140
ns

700
E
- (Volts)

0.4
IC /I B =10
120 600
ts
COMPLEMENTARY TYPE – FZT651 C
B
td

Switching time
100 500
0.3

PARTMARKING DETAIL – FZT751

tf
80 400
tr

0.2

ABSOLUTE MAXIMUM RATINGS.

60 300
V

40 200

0.1
20 100
PARAMETER SYMBOL VALUE UNIT
0
Collector-Base Voltage VCBO -80 V
0 0
0.0001 0.001 0.01 0.1 1 10 0.1 1

Collector-Emitter Voltage VCEO -60 V

I - Collector Current (Amps)
C
I - Collector Current (Amps)
C

Emitter-Base Voltage VEBO -5 V

VCE(sat) v IC Switching Speeds Peak Pulse Current ICM -6 A
Continuous Collector Current IC -3 A
1.4
Power Dissipation at Tamb=25°C Ptot 2 W
225
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
1.2
- (Volts)

175

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

- Gain

VCE =2V
1.0 IC /I B=10

125 Collector-Base V(BR)CBO -80 V IC=-100µA

0.8
Breakdown Voltage
h

Collector-Emitter V(BR)CEO -60 V IC=-10mA*

V

75

0.6
Breakdown Voltage
0

0.01 0.1 1 10
Emitter-Base V(BR)EBO -5 V IE=100µA
0.0001 0.001 0.01 0.1 1 10
Breakdown Voltage
I - Collector Current (Amps)
C
I - Collector Current (Amps)
Collector Cut-Off Current ICBO -0.1 µA VCB=-60V
-10 VCB=-60V,T =100°C
C

µA
hFE v IC VBE(sat) v IC
amb

Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V

Collector-Emitter VCE(sat) -0.15 0.3 V IC=-1A, IB=-100mA*
Single Pulse Test at Tamb=25°C

10 Saturation Voltage -0.45 0.6 V IC=-3A, IB=-300mA*

1.2
Base-Emitter VBE(sat) -0.9 -1.25 V IC=-1A, IB=-100mA*
Saturation Voltage
1.0
1
Base-Emitter VBE(on) -0.8 -1.0 V IC=-1A, VCE=-2V*
Turn-On Voltage
- (Volts)

VC E=2V

Static Forward Current hFE 70 200 IC=-50mA, VCE =-2V*

DC
Transfer Ratio 100 200 300 IC=-500mA, VCE =-2V*
0.8
0.1 1s
100ms 80 170 IC=-1A, VCE =-2V*
V

10ms
0.6 1ms
100µs
40 150 IC=-2A, VCE =-2V*
0.01
Transition Frequency fT 100 140 MHz IC=-100mA, VCE =-5V
0.4
0.0001 0.001 0.01 0.1 1 10 0.1 1 10 100 f=100MHz
Switching Times ton 40 ns IC=-500mA, VCC =-10V
I - Collector Current (Amps) IB1=IB2=-50mA
VCE - Collector Emitter Voltage (V)
C

toff 450 ns
VBE(on) v IC Safe Operating Area Output Capacitance Cobo 30 pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
3 - 235 3 234
 SOT223 PNP SILICON PLANAR
FZT751 HIGH PERFORMANCE TRANSISTOR FZT751
ISSUE 2 – FEBRUARY 1995
FEATURES
TYPICAL CHARACTERISTICS C
* 60 Volt VCEO
0.6 td
* 3 Amp continuous current
tr

tf ts
IB1 =IB2=IC/10
* Low saturation voltage
0.5 ns

140
ns

700
E
- (Volts)

0.4
IC /I B =10
120 600
ts
COMPLEMENTARY TYPE – FZT651 C
B
td

Switching time
100 500
0.3

PARTMARKING DETAIL – FZT751

tf
80 400
tr

0.2

ABSOLUTE MAXIMUM RATINGS.

60 300
V

40 200

0.1
20 100
PARAMETER SYMBOL VALUE UNIT
0
Collector-Base Voltage VCBO -80 V
0 0
0.0001 0.001 0.01 0.1 1 10 0.1 1

Collector-Emitter Voltage VCEO -60 V

I - Collector Current (Amps)
C
I - Collector Current (Amps)
C

Emitter-Base Voltage VEBO -5 V

VCE(sat) v IC Switching Speeds Peak Pulse Current ICM -6 A
Continuous Collector Current IC -3 A
1.4
Power Dissipation at Tamb=25°C Ptot 2 W
225
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
1.2
- (Volts)

175

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

- Gain

VCE =2V
1.0 IC /I B=10

125 Collector-Base V(BR)CBO -80 V IC=-100µA

0.8
Breakdown Voltage
h

Collector-Emitter V(BR)CEO -60 V IC=-10mA*

V

75

0.6
Breakdown Voltage
0

0.01 0.1 1 10
Emitter-Base V(BR)EBO -5 V IE=100µA
0.0001 0.001 0.01 0.1 1 10
Breakdown Voltage
I - Collector Current (Amps)
C
I - Collector Current (Amps)
Collector Cut-Off Current ICBO -0.1 µA VCB=-60V
-10 VCB=-60V,T =100°C
C

µA
hFE v IC VBE(sat) v IC
amb

Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V

Collector-Emitter VCE(sat) -0.15 0.3 V IC=-1A, IB=-100mA*
Single Pulse Test at Tamb=25°C

10 Saturation Voltage -0.45 0.6 V IC=-3A, IB=-300mA*

1.2
Base-Emitter VBE(sat) -0.9 -1.25 V IC=-1A, IB=-100mA*
Saturation Voltage
1.0
1
Base-Emitter VBE(on) -0.8 -1.0 V IC=-1A, VCE=-2V*
Turn-On Voltage
- (Volts)

VC E=2V

Static Forward Current hFE 70 200 IC=-50mA, VCE =-2V*

DC
Transfer Ratio 100 200 300 IC=-500mA, VCE =-2V*
0.8
0.1 1s
100ms 80 170 IC=-1A, VCE =-2V*
V

10ms
0.6 1ms
100µs
40 150 IC=-2A, VCE =-2V*
0.01
Transition Frequency fT 100 140 MHz IC=-100mA, VCE =-5V
0.4
0.0001 0.001 0.01 0.1 1 10 0.1 1 10 100 f=100MHz
Switching Times ton 40 ns IC=-500mA, VCC =-10V
I - Collector Current (Amps) IB1=IB2=-50mA
VCE - Collector Emitter Voltage (V)
C

toff 450 ns
VBE(on) v IC Safe Operating Area Output Capacitance Cobo 30 pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
3 - 235 3 234