electronics

Article
A New Study on the Temperature and Bias
Dependence of the Kink Effects in S22 and
h21 for the GaN HEMT Technology
Giovanni Crupi 1, * , Antonio Raffo 2 , Valeria Vadalà 2 , Giorgio Vannini 2 and
Alina Caddemi 3
1 Department of Biomedical and Dental Sciences and Morphofunctional Imaging, University of Messina,
98125 Messina, Italy
2 Department of Engineering, University of Ferrara, 44122 Ferrara, Italy; antonio.raffo@unife.it (A.R.);
vdlvlr@unife.it (V.V.); giorgio.vannini@unife.it (G.V.)
3 Department of Engineering, University of Messina, 98166 Messina, Italy; acaddemi@unime.it
* Correspondence: crupig@unime.it; Tel.: +39-090-3977327




Received: 16 October 2018; Accepted: 21 November 2018; Published: 25 November 2018


Abstract: The aim of this feature article is to provide a deep insight into the origin of the kink effects
affecting the output reflection coefficient (S22 ) and the short-circuit current-gain (h21 ) of solid-state
electronic devices. To gain a clear and comprehensive understanding of how these anomalous
phenomena impact device performance, the kink effects in S22 and h21 are thoroughly analyzed over
a broad range of bias and temperature conditions. The analysis is accomplished using high-frequency
scattering (S-) parameters measured on a gallium-nitride (GaN) high electron-mobility transistor
(HEMT). The experiments show that the kink effects might become more or less severe depending
on the bias and temperature conditions. By using a GaN HEMT equivalent-circuit model, the
experimental results are analyzed and interpreted in terms of the circuit elements to investigate the
origin of the kink effects and their dependence on the operating condition. This empirical analysis
provides valuable information, simply achievable by conventional instrumentation, that can be used
not only by GaN foundries to optimize the technology processes and, as a consequence, device
performance, but also by designers that need to face out with the pronounced kink effects of this
amazing technology.

Keywords: equivalent circuit; GaN; HEMT; scattering parameter measurements; solid-state

electronic device

1. Introduction
With the aim of enabling microwave engineers to exploit advanced transistor technologies at
their best, increasing attention is being given to the investigation of the kink effects in the output
reflection coefficient (S22 ) and the short-circuit current-gain (h21 ) of solid-state electronic devices made
with different semiconductor materials, like silicon (Si), gallium arsenide (GaAs), and gallium nitride
(GaN) [1–13]. The kink in S22 consists in the change of the concavity of the function Im(S22 ) versus
Re(S22 ) (i.e., from convex to concave and vice versa), while the kinks in h21 consist of peaks that are
detectable by plotting the magnitude of h21 in dB versus the frequency on a log scale. As the kink
effects can be interpreted in terms of the transistor equivalent-circuit elements, many studies have
been developed to identify those ones playing a dominant role, depending on the specific case study.
The origin of the kink effect in S22 has been mostly ascribed to high values of the transconductance
(gm ) [1,4–6], whereas h21 can be affected by a first kink, originating from the resonance between the
extrinsic inductances and the intrinsic capacitances [7–9,12,13], and a second kink, arising from the

Electronics 2018, 7, 353; doi:10.3390/electronics7120353 www.mdpi.com/journal/electronics

Electronics 2018, 7, 353 2 of 11

resonance of the extrinsic reactive elements [12,13]. It is worth underlining that an accurate study
of the kink effects in S22 and h21 parameters of microwave transistors represents a powerful tool for
microwave engineers for fabrication, modeling and design purposes. Device technologists might
enhance or alleviate the kinks in S22 and h21 , depending on the application constraints, simply through
optimization of the device layout and structure. Device modelers can exploit the kinks in S22 and
h21 for extracting equivalent circuit parameters (e.g., the resonance frequency associated with the
first kink in h21 has been used to accomplish the challenging task of determining the intrinsic output
capacitance [7,8]). Circuit designers should properly take into account the kink effect in S22 , especially
for the design of broadband output matching networks [14,15]. In addition, circuit designers can
benefit from the kinks in h21 as they enable achieving an increase in the current gain at the resonant
frequencies. However, so far, the interest in obtaining active transistor operation at frequencies beyond
the cut-off frequency (fT ) has been focused on bipolar transistors (e.g., by proper design of the so-called
resonance phase transistor [16–21]), recent studies have shown that the achievement of a current gain
even at frequencies higher than fT is achievable also in FET transistors, owing to the kinks in h21 [12,13].
This feature article is focused on investigating the kinks in S22 and h21 for the gallium-nitride
(GaN) high electron-mobility transistor (HEMT) technology, which is receiving increasing attention for
high-temperature and high-power applications at high frequencies [22–29]. In particular, the kinks
are studied at different ambient (i.e., case) temperatures (Ta ) and bias voltages (VGS and VDS ).
The study consists of a comprehensive examination of the experimental results based on scattering
(S-) parameter measurements and an exhaustive interpretation of the achieved findings using the
transistor equivalent-circuit model. Although GaN HEMT is used as a case study, the reported study is
technology-independent as it is based on a standard equivalent circuit topology for FETs, thus making
the achieved finding representative and generalizable for any FET. This is confirmed by previous
studies which have already demonstrated that the appearance or absence of the kinks in S22 and h21 is
simply rooted in the values of the equivalent circuit elements of the tested FET, besides the analyzed
frequency range [1,6,9,12,13].
The remainder of this article is organized as follows. Section 2 is devoted to the analysis of the
kink effect in S22 ; Section 3 is focused on the investigation of the kink effects in h21 ; and Section 4
summaries the main conclusions.

2. Kink Effect in S22

The studied solid-state electronic device is a GaN HEMT with a gate length of 0.25 µm and a gate
width of 1.5 mm (i.e., 10 × 150 µm) (see Figure 1a). It was manufactured in the GH25-10 technology by
United Monolithic Semiconductors (UMS) [30–32], using an AlGaN/GaN heterostructure grown on
silicon carbide (SiC) substrate with a field plate for power applications. This foundry process, entitling
a power density of 4.5 W/mm with typical fT of 25 GHz, is optimized for X-band (i.e., 8–12 GHz)
high-power applications. The S-parameters were measured from 0.2 to 65 GHz under different bias
conditions and at four ambient temperatures: 35 ◦ C, 90 ◦ C, 145 ◦ C, and 200 ◦ C. Subsequently, the h21
parameter was straightforwardly calculated from the measured S-parameters by using conventional
transformation formulas [33]. Figure 1b shows the small-signal equivalent circuit used for modelling
the tested transistor. Firstly, the extrinsic elements were determined from S-parameters at “cold”
pinch-off condition (i.e., VDS = 0 V and VGS = −4 V) and, subsequently, the intrinsic elements were
calculated from the intrinsic admittance (Y-) parameters at each bias point [12].
Figures 2 and 3 show the S-parameters measured at the four investigated ambient temperatures
with VDS = 30 V and for two values of VGS : −3.5 V and −3.1 V, respectively. It can be observed
that S22 of the tested device is affected by the kink effect under both bias conditions. As illustrated
in Figures 2 and 3, the kink effect can be detected also as a dip in the magnitude of S22 , due to two
zeros occurring between two poles. This is in line with findings from previous studies showing
that the kink effect in S22 can be analyzed also in terms of poles and zeros [2–4,6]. The shape of the
kink effect strongly depends on the combined effects of equivalent circuit elements whose values
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might remarkably vary with the operating conditions. By heating the device, the kink effect gets less
pronounced and this can be attributed to the reduction of gm which is associated to a decrease of the
pronounced and this can be attributed to the reduction of gm which is associated to a decrease of
average velocity of the electrons drifting in the 2-D electron gas (2DEG) channel. As a matter of fact,
the average velocity of the electrons drifting in the 2-D electron gas (2DEG) channel. As a matter of
gm plays a dominant role in determining the appearance and the shape of the kink effect in S22. A
fact, gm plays a dominant role in determining the appearance and the shape of the kink effect in S22 .
higher temperature leads also to a decrease in the drain-source resistance (Rds), moving the starting
A higher temperature leads also to a decrease in the drain-source resistance (Rds ), moving the starting
point of S22 closer to the short-circuit condition. By increasing Ta from 35 °C to 200 °C when VGS is
point of S22 closer to the short-circuit condition. By increasing Ta from 35 ◦ C to 200 ◦ C when VGS is
−3.5 V, gm and Rds decrease from 225.7 to 186.8 mS and from 189.7 to 146.7 Ω, respectively. Given the
−3.5 V, gincrease
same m and Rin ds decrease from
Ta but with VGS225.7
= −3.1toV,186.8
gm andmSRand from 189.7 to 146.7 Ω, respectively. Given the
ds decrease from 347.9 to 215.4 mS and from 138.9
same increase
to 135.2 in Ta but with VGS = −3.1 V, gm and Rds decrease from 347.9 to 215.4 mS and from 138.9
Ω, respectively.
to 135.2TheΩ, respectively.
reduction of gm and Rds at higher temperatures can be, respectively, noticed from the
The reduction
decrease of gm and Rdsmagnitudes
in the low-frequency at higher temperatures
of the forward can be, respectively,
transmission noticed
(S21) and from coefficient
reflection the decrease
in Sthe low-frequency
22 (see Figures 2e,f and magnitudes
3e,f), sinceof the forward
at relatively low transmission
frequencies S21(S 21 ) Sand
and reflection
22 can to gm and RdsS22
be linkedcoefficient
(seeasFigures [34]:and 3e,f), since at relatively low frequencies S21 and S22 can be linked to gm and Rds as
follows2e,f

S = −2 g mExtr (R0 // RdsExtr )

follows [34]:
(1)
S21 21= −2gmExtr ( R0 //RdsExtr ) (1)

dsExtr − R00
RRdsExtr −R
SS2222== (2) (2)
dsExtr + R0
RRdsExtr + R0
gm
gmExtr = (3)
g −1
g mExtr = 1 + gm Rs + Rmds−1 ( Rs + Rd )
1 + g m Rs + R−ds1 (Rs + Rd )
(3)
Rds
R− 1
dsExtr = (4)
−1
1 + gm Rs +RRds−−
11
ds ( Rs + Rd )
R = (4)
1 + 50 Rds ( RgsmExtr
s +while
−1
) RdsExtr represent the extrinsic
+ Rd and
dsExtr
where R0 is the characteristic resistance (i.e., gm RΩ),
transconductance and drain-source resistance.
where R0 is the characteristic resistance (i.e., 50 Ω), while gmExtr and RdsExtr represent the extrinsic
To focus attention on the VGS dependence, Figure 4 illustrates the S-parameters measured at
transconductance and drain-source resistance.
Ta = 35 ◦ C, VDS = 30 V and with VGS equal to −3.5 V and −3.1 V. By varying VGS from −3.5 to
To focus attention on the VGS dependence, Figure 4 illustrates the S-parameters measured at Ta =
−3.1 V, the improvement of gm leads to an increase of the low-frequency magnitude of S21 and to an
35 °C, VDS = 30 V and with VGS equal to −3.5 V and −3.1 V. By varying VGS from −3.5 to −3.1 V, the
enhancement of the kink effect in S22 , whereas the decrease of Rds leads to a shift of the starting point
improvement of gm leads to an increase of the low-frequency magnitude of S21 and to an
of Senhancement
22 towards the short-circuit
of the kink effectcondition.
in S22, whereas the decrease of Rds leads to a shift of the starting point
of As
S22 can be observed
towards in Figure
the short-circuit 5, the kink effect in S22 vanishes when VDS reaches 0 V and, in line
condition.
with this finding, the dip in the magnitude
As can be observed in Figure 5, the kink S22 disappears.
ofeffect This
in S22 vanishes is because,
when by reducing
VDS reaches 0 V and, in VDS , gm
line
decreases and, in addition, its role is further diminished by the decrease
with this finding, the dip in the magnitude of S22 disappears. This is because, of R ds . As R
by reducing VDS, gdsm is
a matter of fact,
connected inand,
parallel with theitsvoltage-controlled current source − jωπm
gm e of Rds.V)
decreases in addition, role is further diminished by the (i.e.,
decrease Asand thus its
a matter of reduction
fact, Rds
tends to short circuit
is connected the contribution
in parallel with the of gm , thereby contributing
voltage-controlled current to the suppression
source (i.e., gme-j𝜔𝜋mofV)theandkink effect
thus its in
S22reduction
and to thetends
decrease in the
to short low-frequency
circuit the contribution magnitude of S21 (see
of gm, thereby Equationto(1)).
contributing The reduction
the suppression of gm
of the
andkink
Rds effect in SV
at lower 22DSand
cantobe,
therespectively,
decrease in the low-frequency
noticed magnitude
from the decrease in of
theSlow-frequency
21 (see Equationmagnitude
(1)). The
of Sreduction
21 (see of g
Figure and
m 5e) andR at
dsthe lower
shift ofV DS can
the be,
starting respectively,
point of S 22 noticed
closer tofrom
the the decrease
short-circuit in the
condition
low-frequency
(see Figure 5d). magnitude of S21 (see Figure 5e) and the shift of the starting point of S 22 closer to the
short-circuit condition (see Figure 5d).

(a) (b)

Figure (a)(a)
1. 1.
Figure Photograph
Photographofofthe
thestudied
studiedGaN
GaN HEMT and (b)
HEMT and (b) its
itssmall-signal
small-signalequivalent
equivalentcircuit.
circuit.
Electronics 2018, 7, 353 4 of 11

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Electronics 2018, 7, x FOR PEER REVIEW 4 of 11

(a) (b) (c) (d)

(a) (b) (c) (d)

(e) (f)
(e) (f)
Figure 2. 2. Measured(a)(a)S S11, ,(b)
(b)SS12,, (c)(c) SS21,, (d)
(d) SS2222, ,(e)
(e)magnitude
magnitudeofofSS21, and (f) magnitude of S22 from
Figure
Figure
Measured
2.GHz
Measured (a) 11
S11 , (b) S1212at, (c) S21 21 , and (f) magnitude of S22 from
21, (d) S22, (e) magnitude of S21, and (f) magnitude of S22 from
0.2
0.20.2 to
toto 65
6565GHz for
for a a GaN
GaN HEMT
HEMT at V
V DS = 30 V and VGS = −3.5 V under four ambient temperatures: 35
= 30 V and V = − 3.5 V under four ambient temperatures:
GHz °C,
for and
a GaN DS GS
°C,
◦ C,90 °C,
◦ C,145 ◦ C, and200HEMT
°C.◦ at VDS = 30 V and VGS = −3.5 V under four ambient temperatures: 35
35°C, 90 145 200
90 °C, 145 °C, and 200 °C. C.

(a) (b) (c) (d)

(a) (b) (c) (d)

(e) (f)
(e) (f)
Figure 3. Measured (a) S11, (b) S12, (c) S21, (d) S22, (e) magnitude of S21, and (f) magnitude of S22 from
Figure
to3.653. Measured (a)S S11HEMT
, (b) S12,, (c)
(c)
VDSSS21
=21,30
, (d)
VSSand
22, (e) magnitude of S21, and (f) magnitude of S22 from
Figure
0.2 Measured
GHz for a(a)
GaN 11 , (b) S12at (d) 22 , (e)
VGSmagnitude of S21
= −3.1 V under , and
four (f) magnitude
ambient of S22 35
temperatures: from
0.2 to 65 GHz for a GaN HEMT at V DS = 30 V and VGS = −3.1 V under four ambient temperatures: 35
°C. at VDS = 30 V and VGS = −3.1 V under four ambient temperatures:
0.2°C,
to 90
65°C,
GHz 145for
°C,aand
GaN 200HEMT
°C, 90 °C, 145 °C, and 200 °C.
35 ◦ C, 90 ◦ C, 145 ◦ C, and 200 ◦ C.

(a) (b) (c) (d)

(a) (b) (c) (d)
 (e) (f)
Figure
Electronics 2018, 3. Measured (a) S11, (b) S12, (c) S21, (d) S22, (e) magnitude of S21, and (f) magnitude of S22 from
7, 353 5 of 11
0.2 to 65 GHz for a GaN HEMT at VDS = 30 V and VGS = −3.1 V under four ambient temperatures: 35
°C, 90 °C, 145 °C, and 200 °C.

(a) 7, x FOR PEER REVIEW

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Electronics 2018, 7, x FOR PEER REVIEW 5 of 11

(e) (f)
(e) (f)
Figure 4. Measured(a) S(a) S11, (b) S12, (c) S21, (d) S22, (e) magnitude of S21, and (f) magnitude of S22 from
Figure 4. Measured 11 , (b) S12 , (c) S21 , (d) S22 , (e) magnitude of S21 , and (f) magnitude of S22 from
Figure 4. GHz
0.2 to 65 Measured (a)
for a GaN S11, (b) S12
HEMT at, T
(c) S21, (d) S22, (e) magnitude of S21, and (f) magnitude of S22 from
a = 35 °C and VDS = 30 V for two values of VGS: −3.5 V and −3.1 V.
0.2 to0.2
65toGHz for a GaN HEMT at T = 35 ◦ C and V DS ==3030VVfor
65 GHz for a GaN HEMT ataTa = 35 °C and VDS
for two values of VGS : −
two values of VGS: −3.5
3.5 V and −3.1 V.
V and −3.1 V.

(a) (b) (c) (d)

(a) (b) (c) (d)

(e) (f)
(e) (f)
Figure 5. Measured (a) S11, (b) S12, (c) S21, (d) S22, (e) magnitude of S21, and (f) magnitude of S22 from
Figure 655. GHz
Measured
0.25.toMeasured for(a) (a)
S11S, 11(b)
a GaN , (b)
HEMT S12S12 , (c)
TaS=S212135
,at(c) ,, (d)
(d)
°C S 22, (e) magnitude of S21, and (f) magnitude of S22 from
Sand VGS magnitude
= −3.1 V for of fourS21values
, and of (f)Vmagnitude
DS: 0 V, 10 V, of20S22
V, from
Figure 22 , (e)
0.2 to 65 GHz for a GaN HEMT at T a = 35◦°C and VGS = −3.1 V for four values of VDS: 0 V, 10 V, 20 V,
0.2 toand 30 V. for
65 GHz S21 at
aV GaNDS = 0 V is multiplied
HEMT at Ta = 35 by aCfactorand V ofGS
30=in−Figure
3.1 V 4c forfor better
four readability.
values of VDS : 0 V, 10 V, 20 V,
and 30 V. S21 at VDS = 0 V is multiplied by a factor of 30 in Figure 4c for better readability.
and 30 V. S21 at VDS = 0 V is multiplied by a factor of 30 in Figure 4c for better readability.
Figure 6a reports the comparison between measured and simulated S22 at Ta = 35 °C, VDS = 30 V,
and Figure
Figure VGS6a 6a reports
= −3.1 V. Although
reports
the comparison
the comparison the extraction between
between
measured
of a measured
model that and
can simulated
and faithfully
simulated
S22 at Ta = 35
reproduce
S22 at Tathe
°C,
= 35 ◦VC,
DS = 30 V,
behavior VDS of=a 30 V,
and V GS = −3.1 V. Although the extraction of a model that can faithfully reproduce the behavior of a
device with a large gate periphery over a broad frequency range reaching very high frequencies is
and V GS = −3.1 aV.large
device Although the extraction of a model thatrange
can faithfullyvery reproduce the behavior of
quite awithchallenging gate task, periphery
the standard over a broad
equivalent-circuit frequency model is reaching
able to mimic the high frequencies
general trend is of
a device
quite with a large
a challenging and, gate
task,inperiphery
theparticular,
standard to over a broad
equivalent-circuit frequency range reaching very high frequencies
the measurements predict the kinkmodel in S22 andis able
thetodipmimic
in itsthe general trend
magnitude of
too (see
is quite
the a challenging
measurements task,
and, inthe standard
particular, to equivalent-circuit
predict the kink in
Figure 6b). Furthermore, as will be seen in the next section, the extracted model also allows the Smodel
22 and the is able
dip into mimic
its magnitudethe general
too (see trend
of theprediction of the two kinks in h21. It is worth noticing that, in accordance with what is stated above, too
measurements
Figure 6b). Furthermore,and, inas particular,
will be seen to predict
in the nextthe kink
section, intheS and
extracted
22 the dip
model in its
also magnitude
allows the
prediction
(see Figure
the kink 6b). ofFurthermore,
effecttheintwo the kinks
simulated in
as hwill
21. It be
S22 is can worth
seen noticing
in the next
be suppressed that,
by in accordance
section,
reducing with what
thegmextracted
and/or is stated
Rdsmodel
(see alsoabove,
Figure allows
6c–f). the
the
prediction kink
This isof effect
the two in the
S22kinks simulated
in hkink-freeS 22 can be suppressed by reducing gm and/or Rds (see Figure 6c–f).
because becomes 21 . It is worth noticing
by nullifying thethat,
value in ofaccordance
gm and/or its with what is stated
contribution. On the above,
This ishand,
because
othereffect inbytheS 22 becomes kink-free by nullifying the value of gm and/or its contribution. On the
increasing Rds S at22a can
verybe high value, the by shape of S22 isgmodified
the kink simulated suppressed reducing m and/orsomewhat Rds (see Figureand the6c–f).
other
starting hand,
point by increasing Rds at a the veryopen-circuit
high value,condition the shapebut ofwith
S22 isthemodified somewhat and the
This is because S22ofbecomes
S22 shifts towards
kink-free by nullifying the value of gm and/orkink effect still affecting
its contribution. SOn
22 the
starting
(see point
Figure of
6g,h). S 22 shifts towards the open-circuit condition but with the kink effect still affecting S22
It is worth noticing that although changing only one element of the model might be
other hand, by increasing Rds at a very high value, the shape of S22 is modified somewhat and the
(see Figure 6g,h).
not physically It is worth noticing
representative of a real that although
device, changing
repeating this only
type one elementenables
of analysis of the model might be
understanding
not physically representative of a real device, repeating
of how each element impacts on the appearance and shape of the kinks and the physical soundnessthis type of analysis enables understanding
of
of how each element
the achieved outcomes impacts on the appearance
is guaranteed by the fact andthatshape theofequivalent-circuit
the kinks and themodel physicalis asoundness
physically
of
meaningful representation of the FET behavior. As an example, this type of powerful aanalysis
the achieved outcomes is guaranteed by the fact that the equivalent-circuit model is physicallyhas
meaningful
been conducted representation
in a pioneering of thestudy FET behavior.
to exploreAsthe anorigin
example, of thethis typeeffect
kink of powerful
in S22 byanalysis
varyinghas the
been conducted
intrinsic elementinvalues, a pioneering
showingstudy that gto explore the origin of the kink effect in S22 by varying the
m plays a dominant role [1].
Electronics 2018, 7, 353 6 of 11

starting point of S22 shifts towards the open-circuit condition but with the kink effect still affecting S22
(see Figure 6g,h). It is worth noticing that although changing only one element of the model might be
not physically representative of a real device, repeating this type of analysis enables understanding
of how each element impacts on the appearance and shape of the kinks and the physical soundness
of the achieved outcomes is guaranteed by the fact that the equivalent-circuit model is a physically
meaningful representation of the FET behavior. As an example, this type of powerful analysis has been
conducted in a pioneering study to explore the origin of the kink effect in S22 by varying the intrinsic
element values, showing that gm plays a dominant role [1].
Electronics 2018, 7, x FOR PEER REVIEW 6 of 11

(a) (b)

(c) (d)

(e) (f)

(g) (h)
Figure 6. Comparison between measured and simulated (a) S22 and (b) its magnitude from 0.2 to 65
Figure 6. Comparison between measured and simulated (a) S22 and (b) its magnitude from 0.2 to
GHz for a GaN HEMT at Ta = 35 °C, VDS = 30 V, and VGS = −3.1 V. The values of gm and Rds for the
65 GHz forextracted HEMT at Ta = model
a GaN equivalent-circuit 35 ◦ C,are
VDS = 30
347.9 mSV,and
and
138.9 −3.1 V. The
VGSΩ,=respectively. Thevalues of gSm22 and
simulated is Rds for
the extracted equivalent-circuit
compared model
with the simulations are 347.9
achieved mS
by using theand
models with:Ω,
138.9 respectively.
(c,d) gm = 0 mS, (e,f)The
Rds = 0simulated
Ω, and S22 is
compared with the simulations achieved by using the models with: (c,d) gm = 0 mS, (e,f) Rds = 0 Ω,
(g,h) Rds = 10 kΩ.

and (g,h) Rds = 10 kΩ.

 FETs is based on using S-parameters measured under “cold” conditions (VDS = 0 V, i.e., passive
device) [35–39]. As there are no electrons drifting from source to drain when VDS = 0 V, gm is equal to
zero, thus implying that S21 becomes equal to S12 and S22 turns out to be kink-free. This is illustrated
in Figure 7, showing S-parameters measured at two typical bias points used for modeling purpose:
“cold” unbiased
Electronics 2018, 7, 353 (i.e., VGS = 0 V) and pinched-off (i.e., VGS = −4 V) conditions. By moving from 7 of an
11
open-channel to pinch-off condition, the starting point of S22 shifts from the short-circuit to the
Electronics 2018, 7, x FOR PEER REVIEW 7 of 11
open-circuit condition (see Figure 7d), owing to the increase of Rds, but without the occurrence of the
As is well known, the most popular technique for determining the extrinsic circuit elements
kink effect as gm is kept at zero by biasing the device under “cold” condition.
for FETs Asisisbased
well known,
on usingtheS-parameters
most popular technique
measuredfor determining
under the extrinsic
“cold” conditions (Vcircuit elements for
DS = 0 V, i.e., passive
FETs is based on using S-parameters measured under “cold” conditions (V DS = 0 V, i.e., passive
device) [35–39]. As there are no electrons drifting from source to drain when VDS = 0 V, gm is equal to
device)
zero, thus[35–39].
implying As that
thereSarebecomes
no electrons drifting
equal to S12 from
and Ssource to drain when VDS = 0 V, gm is equal to
21 22 turns out to be kink-free. This is illustrated
zero, thus implying that S 21 becomes equal to S12 and S22 turns out to be kink-free. This is illustrated
in Figure 7, showing S-parameters measured at two typical bias points used for modeling purpose:
in Figure 7, showing S-parameters measured at two typical bias points used for modeling purpose:
“cold” unbiased (i.e., VGS = 0 V) and pinched-off (i.e., VGS = −4 V) conditions. By moving from
“cold” unbiased (i.e., VGS = 0 V) and pinched-off (i.e., VGS = −4 V) conditions. By moving from an
an open-channel to pinch-off condition, the starting point of S22 shifts from the short-circuit to the
open-channel to pinch-off condition, the starting point of S22 shifts from the short-circuit to the
open-circuit condition (see Figure 7d), owing to the increase of Rds , but without the occurrence of the
open-circuit condition (see Figure 7d), owing to the increase of Rds, but without the occurrence of the
kink effect as gm is kept at zero by biasing the device under “cold” condition.
kink effect as gm is kept at zero by biasing the device under “cold” condition.

(a) (b) (c) (d)

Figure 7. Measured (a) S11, (b) S12, (c) S21, and (d) S22 from 0.2 to 65 GHz for a GaN HEMT at Ta = 35 °C
and VDS = 0 V for two values of VGS: −4 V and 0 V.

3. Kink Effects in h21

Figures 8 and 9 report the measured h21 at the four investigated ambient temperatures with VDS
= 30 V and for two values of VGS: −3.5 V and −3.1 V, respectively. It is found that two peaks appear in
h21 at each bias(a) condition. It has already (b) been demonstrated(c) in previous works that the (d) first peak is
due to the
Figure resonance(a)between
7. Measured S11, (b) S12the
, (c)extrinsic
S21, and (d)inductances
S22 from 0.2and
to 65the
GHz intrinsic
for a GaNcapacitances
HEMT at T[7–9,12,13],
a = 35 °C
Figure 7. Measured (a) S11 , (b) S12 , (c) S21 , and (d) S22 from 0.2 to 65 GHz for a GaN HEMT at
whereas
and VDS =the 0◦ Vsecond peak is
for two values of Vdue
GS: −4to the 0resonance
V and V. of the extrinsic inductive and capacitive
Ta = 35 C and VDS = 0 V for two values of VGS : −4 V and 0 V.
contributions [12,13]. The experiments show that the second peak is substantially insensitive to Ta, as
3. KinkEffects
expected
3. Kink Effects ininhh2121 that the extrinsic reactive elements are mostly temperature-independent, and
considering
the first peak 8isand
Figures roughly independent of Ta, atconsistently with the slight temperature dependence of
Figures 8 and 99 report
report thethemeasured
measuredh21h21 the fourfour
at the investigated
investigated ambient temperatures
ambient with VDS
temperatures with
the intrinsic
= 30 V and for capacitances.
two values of VGS: −3.5 V and −3.1 V, respectively. It is found that two peaks appear in
VDS = 30 V and for two values of VGS : −3.5 V and −3.1 V, respectively. It is found that two
Toeach
h21 at focus attention
bias condition. on Itthe VGS
has dependence,
already Figure 10 illustrates
been demonstrated in previous h21 works
measuredthat at
theTfirst
a = 35 °C, is
peak VDS =
peaks appear in h21 at each bias condition. It has already been demonstrated in previous works
30due
V andto the resonance between the extrinsic inductances and the intrinsic capacitances [7–9,12,13], of
with V GS equal to −3.5 V and −3.1 V. By varying V GS from −3.5 to −3.1 V, the improvement
that the first peak is due to the resonance between the extrinsic inductances and the intrinsic
gmwhereas
leads totheansecond increase peakof is
theduelow-frequency
to the resonance magnitude
of the ofextrinsic
h21 but inductive
the two peaks are mostly
and capacitive
capacitances [7–9,12,13], whereas the second peak is due to the resonance of the extrinsic inductive and
contributions
insensitive [12,13].
to this The experiments
variation of VGS. show that the second peak is substantially insensitive to Ta, as
capacitive contributions [12,13]. The experiments show that the second peak is substantially insensitive
expected
As canconsidering
be observed that
in the extrinsic
Figure reactive
11, the first peak elements are mostly
disappears temperature-independent,
at zero VDS, owing to the reduction and of
Ta , first
tothe as expected
peak is considering
roughly that the extrinsic
independent of T , reactive elements
consistently with the are mostly
slight temperature-independent,
temperature dependence of the
Rds that tends to short circuit the intrinsic capacitive contributions [7,9,12]. On the other hand,
a
and the first
the intrinsic peak is roughly
capacitances. independent of T a , consistently with the slight temperature dependence
second peak is mostly insensitive to VDS, owing to the bias independence of the extrinsic reactive
of the intrinsic
To focus capacitances.
attention on the VGS dependence, Figure 10 illustrates h21 measured at Ta = 35 °C, VDS =
elements [12].
30 V and with VGS equal to −3.5 V and −3.1 V. By varying VGS from −3.5 to −3.1 V, the improvement of
gm leads to an increase of the low-frequency magnitude of h21 but the two peaks are mostly
insensitive to this variation of VGS.
As can be observed in Figure 11, the first peak disappears at zero VDS, owing to the reduction of
Rds that tends to short circuit the intrinsic capacitive contributions [7,9,12]. On the other hand, the
second peak is mostly insensitive to VDS, owing to the bias independence of the extrinsic reactive
elements [12].

Figure 8.
Figure 8. Measured
Measured h21
21 from
from 0.2
0.2 to
to65
65GHz
GHzfor foraaGaN
GaNHEMT
HEMTatatVV
DS = 30 V and
DS = 30 VGSV=GS−3.5
V and = −V3.5
under four
V under
ambient
four temperatures:
ambient 35 °C,
temperatures: 3590◦ C,
°C, ◦ C,°C,
90145 ◦ C, 200
145and 200 ◦ C.
and°C.

To focus attention on the VGS dependence, Figure 10 illustrates h21 measured at Ta = 35 ◦ C,

VDS = 30 V and with VGS equal to −3.5 V and −3.1 V. By varying VGS from −3.5 to −3.1 V,
the improvement of gm leads to an increase of the low-frequency magnitude of h21 but the two
peaks are mostly
Figure insensitive
8. Measured to 0.2
h21 from thistovariation
65 GHz forof VGS .HEMT at VDS = 30 V and VGS = −3.5 V under four
a GaN
ambient temperatures: 35 °C, 90 °C, 145 °C, and 200 °C.
Electronics 2018, 7, 353 8 of 11

Electronics 2018, 7, x FOR PEER REVIEW 8 of 11

Electronics 2018, 7, x FOR PEER REVIEW 8 of 11

Figure 9. Measured h21

21from
21 from0.2
0.2toto65
65GHz
GHzfor foraaGaN
GaNHEMT
HEMTatatVV
DS = 30
DSDS V and
= 30 VGS
V andGSV=GS
−3.1
= −V3.1
under four
V under
ambient
four temperatures:
ambient 35 °C,
temperatures: 3590◦ C, ◦ C,°C,
°C,90145 ◦ C,200
145and 200 ◦ C.
and°C.

Figure 9. Measured h21 from 0.2 to 65 GHz for a GaN HEMT at VDS = 30 V and VGS = −3.1 V under four
ambient temperatures: 35 °C, 90 °C, 145 °C, and 200 °C.

Figure 10.
10. Measured
Measured hh21 21 from 0.2 to 65 GHz for a GaN HEMT at Taa = 35 ◦°C and VDS
DS = 30 V for two
Figure 21 from 0.2 to 65 GHz for a GaN HEMT at Ta = 35 C and VDS = 30 V for two
values of VGS : −3.5 V and −3.1 V.
GS : −3.5 V and −3.1 V.
values of VGS

As can be observed in Figure 11, the first peak disappears at zero VDS , owing to the reduction
of Rds that tends to short circuit the intrinsic capacitive contributions [7,9,12]. On the other hand,
the second peak is mostly insensitive to VDS , owing to the bias independence of the extrinsic reactive
Figure 10. Measured h21 from 0.2 to 65 GHz for a GaN HEMT at Ta = 35 °C and VDS = 30 V for two
elements [12].
values of VGS: −3.5 V and −3.1 V.

Figure 11. Measured h21 21 from 0.2 to 65 GHz for a GaN HEMT at Taa = 35 °C and VGS
GS = −3.1 V for four

different values of VDS

DS: 0 V, 10 V, 20 V, and 30 V.

Figure 12a reports the comparison between measured and simulated h21 21 at Taa = 35 °C, VDS
DS = 30 V,
and VGSGS = −3.1 V. As can be observed, the standard equivalent-circuit model is able to predict the two
peaks in h21 21. Figure 12b illustrates that a reduction of gm m results in a dramatic degradation of the
Figure 11.
Figure 11. Measured
Measuredhh2121 from
from 0.2
0.2to
to65
65GHz
GHzfor foraaGaN
GaNHEMT
HEMTatatTaT= a =35
35◦ C
°Cand
andVV GS = −3.1 V for four
GS = −3.1 V for four
low-frequency magnitude of h21 21 but with the two peaks still affecting h21
21. It is worth noticing that the
different values
different values of
of V
VDS
DS:: 0
0 V,
V, 10
10 V, 20 V,
V, 20 V,and
and30 30V.V.
first kink effect in the simulated h21 21 vanishes by reducing Rds ds to zero (see Figure 12c), whereas h21 21 is

substantially insensitive to an increase of Rds ds (see Figure 12d). ◦

Figure12a
Figure 12areports
reportsthe
thecomparison
comparisonbetween
betweenmeasured
measuredandandsimulated
simulated h h21atatT T=
21 a a =35
35 C,
°C,VVDS == 30 V,
DS
and VGS
and −3.1
GS==−3.1 V.V.AsAs
can bebe
can observed,
observed, thethe
standard
standard equivalent-circuit
equivalent-circuit model modelis able to predict
is able the two
to predict the
peaks
two in hin
peaks 21. h
Figure
21 . 12b
Figure illustrates
12b illustratesthat a
that reduction
a reductionofofg g
m mresults in
results inaa dramatic
dramatic degradation
degradation of the
the
low-frequencymagnitude
low-frequency magnitudeof ofhh2121 but
but with
with thethe two
two peaks
peaks still
still affecting
affectinghh2121. It is worth noticing
noticing that
that the
the
first kink
first kink effect
effect ininthe
thesimulated
simulatedhh2121 vanishes
vanishes by by reducing
reducing RRdsds to zero
zero (see
(see Figure
Figure 12c),
12c),whereas
whereashh2121 is
is
substantially insensitive
substantially insensitive to
to an
an increase
increase of of RRdsds (see Figure 12d).

(a) (b)
 Figure 12a reports the comparison between measured and simulated h21 at Ta = 35 °C, VDS = 30 V,
and VGS = −3.1 V. As can be observed, the standard equivalent-circuit model is able to predict the two
peaks in h21. Figure 12b illustrates that a reduction of gm results in a dramatic degradation of the
low-frequency magnitude of h21 but with the two peaks still affecting h21. It is worth noticing that the
first kink2018,
Electronics effect in the simulated h21 vanishes by reducing Rds to zero (see Figure 12c), whereas 9hof
7, 353 is
21 11

substantially insensitive to an increase of Rds (see Figure 12d).

Electronics 2018, 7, x FOR PEER REVIEW

(a) (b) 9 of 11

(c) (d)
Figure 12. Comparison between measured
measured and and simulated
simulated (a) (a) hh21
21 from 0.2 to 65 GHz for a GaN HEMT
◦
Taa = 35 °C, −3.1V.V.The
at T DS==30
C, VDS 30V,
V, and VGS
GS==−3.1 Thevalues
valuesof of ggmmand
andRRdsdsforforthe
theextracted
extracted equivalent-circuit
equivalent-circuit
347.9 mS
model are 347.9 mS and 138.9 Ω,
and 138.9 Ω, respectively.
respectively. TheThe simulated
simulated hh21 compared with the
21 is compared the simulations
simulations
achieved by using the the models
models with:
with: (b) gmm= = 00 mS, (c) RRdsds==00Ω,
mS, (c) Ω,and
and(d)(d)RR = 10
dsds kΩ.
= 10 kΩ.

4.
4. Conclusions
Conclusions
We
We have
have reported
reported aa thorough
thoroughand andcritical
criticalinvestigation
investigationof ofthe
thekinks inSS2222 and
kinksin and hh21 parameters for
21 parameters for
solid-state
solid-state electronic
electronic devices.
devices. To To gain
gain aa comprehensive
comprehensive and and in-depth
in-depth understanding
understanding of of their
their origin,
origin,
we have developed a measurement-based analysis focusing on
we have developed a measurement-based analysis focusing on a GaN HEMT as a case study. a GaN HEMT as a case study. However,
the achieved
However, theoutcomes
achieved can be straightforwardly
outcomes generalized
can be straightforwardly to other FET
generalized types,FET
to other since a standard
types, since a
topology of FET equivalent circuit has been successfully used
standard topology of FET equivalent circuit has been successfully used for analyzing and for analyzing and comprehending the
experiments. We have shown that
comprehending the experiments. We have shown the kink in S22 depends on both temperature and bias
that the kink in S22 depends on both temperatureconditions, the
first
and peak
bias in h21 depends
conditions, theslightly
first peak on temperature
in h21 depends and strongly
slightly on on bias conditions,and
temperature andstrongly
the second on peak
bias
in h 21 is substantially bias- and temperature-insensitive. We have reported
conditions, and the second peak in h21 is substantially bias- and temperature-insensitive. We have an exhaustive interpretation
of the experimental
reported an exhaustive findings by usingof
interpretation a standard transistor
the experimental equivalent-circuit
findings model as transistor
by using a standard it allows
capturing all the three
equivalent-circuit model observed
as it allowskinks. The origin
capturing of the
all the threekinkobserved S22 isThe
effect inkinks. mostly
origindue ofto a high
the kink
value of g m , the first peak in h 21 originates from the resonance between the
effect in S22 is mostly due to a high value of gm, the first peak in h21 originates from the resonance extrinsic inductances and
the intrinsic capacitances, and the
between the extrinsic inductances and the intrinsicsecond kink in h 21 originates from the resonance of
capacitances, and the second kink in h21 the extrinsic
inductive and capacitive contributions. A
originates from the resonance of the extrinsic inductive andreduction of g m allows only suppression
capacitive contributions.of theA kink effect of
reduction in
Sg22 , while a reduction
m allows only suppression
of R leads to the suppression of the kink
ds of the kink effect in S22, while a reduction of Rdseffect in S and the first peak
22leads to the suppression in h 21
by short circuiting the contributions of gm and intrinsic capacitances. On the other
of the kink effect in S22 and the first peak in h21 by short circuiting the contributions of gm and intrinsic hand, it has been
shown that theOn
capacitances. second
the peak
otherinhand, h21 still
it occurs,
has been independently
shown thatofthe the second
reduction peakof gin h21 Rstill
m and ds . occurs,

independently of the reduction of gm and Rds.

Author Contributions: Investigation, G.C. and V.V.; Methodology, G.C. and A.R.; Supervision, G.V. and A.C.;
Writing–original draft, G.C.; Writing–review & editing, A.R., V.V., G.V. and A.C.
Author Contributions: Investigation, G.C. and V.V.; Methodology, G.C. and A.R.; Supervision, G.V. and A.C.;
Funding: This research was funded in part by the Eurostars project E!10149 MicromodGaN.
Writing–original draft, G.C.; Writing–review & editing, A.R., V.V., G.V. and A.C.
Conflicts of Interest: The authors declare no conflict of interest.
Funding: This research was funded in part by the Eurostars project E!10149 MicromodGaN.

References
Conflicts of Interest: The authors declare no conflict of interest.

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