Sunteți pe pagina 1din 100

(See the book by Liao, Chapter 4, pp.

102-141; also the book


by Pozar, Chapter 3, pp. 91-160)
QUESTION 2
We conclude that any agent for scattering, diffraction, reflection and refraction of the
microwave signal such as air, wood, mountains and hills, concrete, rain, etc of the
microwave signal, is the scattering agent. (JUST MARK THE 3 AGENTS) (3 marks).
MAKE ATTENTION
Solution 2(b)
Solution 3b.
PART II
TUTORIALS 1: MICROWAVE ENGINEERING WAVE PROPAGATION

Propagation constant.
QUIZ OF MICROWAVES
1. Explain the main advantages of TEDS versus traditional low frequency devises.
2. Explain the main rwh theory (working principals)
3.Why do we use npn instead of pnp.
4. Explain the gap using energy gap (impact of tunning diode).
5. Explain how avalanches happened
6.Read diode
7.microwave solide state.
The principles of electromagnetic waves are based on relationships between electricity
and magnetism. A changing magnetic field will induce an electric field and a changing magnetic
field will induce a magnetic field. In addition, the induced fields are not confined; but ordinarily
extend outward into space.

Applications of microwave engineering:


-- RADAR (RAdio Detection And Ranging)
-- Small antenna dimensions for a given beam size.
-- Communications: More channels transmitted for a given percentage bandwidth.
-- Satellite communications.
-- Many molecular / atomic resonances occur at microwave frequencies: microwaves can be
used to study basic properties of materials
-- Microwave heating: microwave ovens.

Maxwell’s Equations:

Parameters of Maxwell’s equations:


𝐸= electric field intensity in volts per meter
𝐻 = magnetic field intensity in amperes per meter
𝐷 = electric flux density in coulombs per square meter
𝐵 = magnetic flux density in Webers per square meter
𝐽 = electric current density in amperes per square meter
𝛿 = electric charge density in coulombs per cubic meter
Maxwell’s equations in frequency domain in a source free insulator:
UR/CST: NYARUGENGE COMPUS
SCHOOL OF ENGINEERING
DEPARTMENT OF EEE
CAT 1: Microwaves Engineering (ETE: 3411) 4thYEAR ETE
DATE: 24/10/2016
SOME ANSWERS
UR/CST: HUYE COMPUS
SCHOOL OF ENGINEERING
SoE, EEE Department
Module Code and Title: ETE 3411 MICROWAVES ENGINEERING
Continuous Assessment Test (CAT 1)
Date: 19/10/2016 Duration 1H30min
QUESTION 3
EXAM: ACADEMIC YEAR 2016-2017
Module: ETE 4164 MICROWAVES ENGINEERING
Date: …/01/2017
OTHERS
Problem 1.
A transmission line with a characteristic impedance 𝑍0 = 50Ohm is terminated by a load
impedance 𝑍𝐿 = 25 − 𝑗75 Ohm. The length of the transmission line is 𝑙 = 0.375𝜆, where 𝜆
the wavelength on the transmission line is.
(a) Calculate the reflection coefficient,Γ𝐿 , at the load.
(b) Calculate the Voltage Standing Wave Ratio (VSWR) on the transmission line.
(c) Calculate the impedance, Z𝑖𝑛 , , at the input of the transmission line.
(d) If a signal is incident at the input of the transmission line, find the ratio of reflected power to
the incident power.
(e) Find the ratio of power delivered to the load to the incident power.

Problem 2.
Solve Problem 1 above using a Smith Chart and compare against results of Solution 1.

Problem 3.
For the load impedance in Problem 1 above, design a matching network to operate at 1.5 GHz,
using a single series short-circuited stub. Use a Smith Chart.
(a)
What is the shortest distance from the load, 𝑑 , that the series short-circuited stub needs to be
located?
(b) What is the shortest length, 𝑙𝑆 , , of the series short-circuited stub at the load, if the stub is
made from an air-filled transmission line of characteristic impedance

Problem 4.
A certain two-port network is measured and the following scattering matrix is obtained.

a. What is the reflection coefficient at port 1 if a matched load terminates port 2?


b. What is the ratio of power out of port 2 to power incident on port 1?
ANSWER
ANSWER
ECE 451 Homework 1 Solutions

1. Given the lossless transmission line shown above,

(a) Find the reflection coefficient R and the standing wave ratio (SWR) for this
loaded transmission line.

(b) Sketch the standing wave patterns for the magnitude of the voltage along this
transmission line in terms of VR.

(c) Determine the impedance at the input of this loaded transmission line.

(d) If a sinusoidal generator 10<0o V, which has a source impedance of 100 Ω is


connected to this loaded transmission line, what is the time average power
delivered to the 75-Ω load.
2. A transmission line of length 0.625λ and characteristic impedance 50Ω is connected to an
-1
unknown load impedance ZR. The input admittance is measured to be Yin= 0.004 - j0.008Ω .
Using the Smith chart find:

(a) the normalized and the actual load admittance

(b) the normalized and the actual load impedance

(c) the load reflection coefficient

(d) the voltage standing wave ratio (VSWR)

(e) The distance, in wavelengths, of the first voltage maximum and minimum, with
reference to the load.
4. Answer the following questions using the attached Smith chart. Clearly identify significant
features on the chart. A transmission line with characteristic impedance 50Ω is terminated by a
load of impedance Zr = 40 + j50 Ω.

(a) What is the SWR? (5 pts)Solution: The normalized zr is 0.8 + j 1.0. Find this
point on the Smith Chart, draw the constant SWR circle, read off the SWR=3.0
(b) What is the phase of Ґr? (5 pts)72 degrees, from the Smith Chart.

(c) What is the normalized admittance at the load? (5 pts) 0.5-j0.6, from the Smith
Chart.

(d) What is the normalized admittance at d = 12.2λ toward the generator from the
load? (5 pts) 0.5+j0.6, from the Smith Chart.

(e) What is the phase of at d = 12.2λ toward the generator from the load? (10 pts)
- 72 degrees, from the Smith Chart. Be sure to read the phase of Gamma from the
impedance side of the constant SWR circle.

(f) What is the shortest distance from the load at which a short-circuited stub could
be attached to achieve an impedance match? (10 pts) 0.265 wavelengths, from the
Smith Chart.
(g) What would the normalized input admittance of the stub be? (10 pts) -j1.1
SMITH CHART PROBLEMS
‘’’
Exercises
A certain two-port network has the scattering matrix below:

0.26 − 𝑗0.16 0.42


[𝑆] = [ ]
0.42 0.36 − 𝑗0.57

The input and output impedances of the two-port network are 50 Ohms. Port 1 is connected to
the output of a transmission line of characteristic impedance of 50 Ohms. Port 2 is connected to
a load impedance of 𝑍𝐿 = 150 Ohms. Answer the following:

(a) What is the reflection coefficient at Port 1?


(b) If a signal is incident at Port 1 from the 50 Ohm transmission line, what is the ratio of
power coupled to the load at Port 2 to the power incident at Port 1?

Solution
(a) The scattering matrix relates the voltages reflected from the ports to the voltages incident on
the ports:

𝑉1− 𝑠11 𝑠12 𝑉1+ 0.26 − 𝑗0.16 0.42 𝑉1+


[ − ] = [𝑠 ] [
𝑠22 𝑉2+ ] = [ ] [ ]
𝑉2 21 0.42 0.36 − 𝑗0.57 𝑉2+

From the second row equation we can write:

𝑉2− = 𝑠21 𝑉1+ + 𝑠22 𝑉2+

We also know that Port 2 is connected to a 150 Ohm load. This can be used to find the
relationship between the incident and reflected voltages at Port 2:

𝑉2+ 𝑍𝐿 −𝑍0 150−50 1


Γ𝐿 = = = =
𝑉2− 𝑍𝐿 +𝑍0 150+50 2

[Careful: the “incident” and “reflected” voltages above, 𝑉2+ and 𝑉2− are defined with respect to
the 2-port network, so 𝑉2− is the voltage reflected from Port 2 or incident on the load, and 𝑉2+ is
the voltage on Port 2, so is the voltage reflected from the load. So the equation above for the
𝑉+
reflection coefficient from the load (Γ𝐿 = 𝑉2−) is really correct]
2
Then we can write:

𝑉2− = 2𝑉2+

Combining with the second row equation we get:

𝑉2− = 2𝑉2+ = 𝑠21 𝑉1+ + 𝑠22 𝑉2+


2𝑉2+ − 𝑠22 𝑉2+ = 𝑠21 𝑉1+
𝑠
𝑉2+ = 21 𝑉1+
2−𝑠22
From the first row equation we can write:

𝑉1− = 𝑠11 𝑉1+ + 𝑠12 𝑉2+

Combining with the equation above we can write:


𝑠
𝑉1− = 𝑠11 𝑉1+ + 𝑠12 2−𝑠
21
𝑉1+
22

Then the reflection coefficient at Port 1 can be written as:


𝑉− 21 𝑠
Γ1 = 𝑉1+ = 𝑠11 + 𝑠12 2−𝑠
1 22

0.42
Γ1 = 0.26 − 𝑗0.16 + 0.42 2−0.36+𝑗0.57

1
Γ1 = 0.26 − 𝑗0.16 + 0.1764 1.64+𝑗0.57

1.64−𝑗0.57
Γ1 = 0.26 − 𝑗0.16 + 0.1764 1.642 +0.572

Γ1 = 0.26 − 𝑗0.16 + 0.096 − 𝑗0.033

Γ1 = 0.356 − 𝑗0.193 which can also be written as: Γ1 = 0.395𝑒 −𝑗0.498

(b) The ratio of power coupled to the load at Port 2 to the power incident at Port 1 is given by:
2
𝑃𝐿 |𝑉2− |2 −|𝑉2+ |
= 2
𝑃𝑖𝑛 |𝑉1+ |

[Note in the equation above, the first term on the nominator (|𝑉2− |2 ) represents the power incident
at the load at Port 2 and the second term (|𝑉2+ |2) represents the power reflected from the load.
The difference then represents the power coupled to the load.]
Then using the results of part (a) above we can write:
2 2 2 2 2
𝑃𝐿 |2𝑉2+ | −|𝑉2+ | 4|𝑉2+ | −|𝑉2+ | |𝑉2+ |
= 2 = 2 =3 2
𝑃𝑖𝑛 |𝑉1+ | |𝑉1+ | |𝑉1+ |

𝑠 2
𝑃𝐿
2
|𝑉2+ | | 21 𝑉1+ | 𝑠 2
2−𝑠22 21
=3 2 =3 2 = 3 |2−𝑠 |
𝑃𝑖𝑛 |𝑉1+ | |𝑉1+ | 22

𝑃𝐿 0.42 2 0.42 2
𝑃𝑖𝑛
= 3 |2−(0.36−𝑗0.57)| = 3 |1.64+𝑗0.57|

𝑃𝐿
𝑃𝑖𝑛
= 0.176
TUTORIALS
SOLUTION
Exercises
A certain two-port network has the scattering matrix below:

0.26 − 𝑗0.16 0.42


[𝑆] = [ ]
0.42 0.36 − 𝑗0.57

The input and output impedances of the two-port network are 50 Ohms. Port 1 is connected to
the output of a transmission line of characteristic impedance of 50 Ohms. Port 2 is connected to
a load impedance of 𝑍𝐿 = 150 Ohms. Answer the following:

(a) What is the reflection coefficient at Port 1?


(b) If a signal is incident at Port 1 from the 50 Ohm transmission line, what is the ratio of
power coupled to the load at Port 2 to the power incident at Port 1?

Solution
(a) The scattering matrix relates the voltages reflected from the ports to the voltages incident on
the ports:

𝑉1− 𝑠11 𝑠12 𝑉1+ 0.26 − 𝑗0.16 0.42 𝑉1+


[ − ] = [𝑠 ] [
𝑠22 𝑉2 + ] = [ ] [ ]
𝑉2 21 0.42 0.36 − 𝑗0.57 𝑉2+

From the second row equation we can write:

𝑉2− = 𝑠21 𝑉1+ + 𝑠22 𝑉2+

We also know that Port 2 is connected to a 150 Ohm load. This can be used to find the
relationship between the incident and reflected voltages at Port 2:

𝑉+ 𝑍 −𝑍 150−50 1
Γ𝐿 = 𝑉2− = 𝑍𝐿 +𝑍0 = 150+50 = 2
2 𝐿 0

[Careful: the “incident” and “reflected” voltages above, 𝑉2+ and 𝑉2− are defined with respect to
the 2-port network, so 𝑉2− is the voltage reflected from Port 2 or incident on the load, and 𝑉2+ is
the voltage on Port 2, so is the voltage reflected from the load. So the equation above for the
𝑉+
reflection coefficient from the load (Γ𝐿 = 𝑉2−) is really correct]
2

Then we can write:

𝑉2− = 2𝑉2+

Combining with the second row equation we get:

𝑉2− = 2𝑉2+ = 𝑠21 𝑉1+ + 𝑠22 𝑉2+


2𝑉2+ − 𝑠22 𝑉2+ = 𝑠21 𝑉1+
𝑠
𝑉2+ = 2−𝑠
21
𝑉1+
22

From the first row equation we can write:

𝑉1− = 𝑠11 𝑉1+ + 𝑠12 𝑉2+

Combining with the equation above we can write:


𝑠
𝑉1− = 𝑠11 𝑉1+ + 𝑠12 2−𝑠
21
𝑉1+
22

Then the reflection coefficient at Port 1 can be written as:


𝑉1− 𝑠21
Γ1 = = 𝑠11 + 𝑠12
𝑉1+ 2−𝑠22

0.42
Γ1 = 0.26 − 𝑗0.16 + 0.42 2−0.36+𝑗0.57

1
Γ1 = 0.26 − 𝑗0.16 + 0.1764 1.64+𝑗0.57

1.64−𝑗0.57
Γ1 = 0.26 − 𝑗0.16 + 0.1764 1.642 +0.572

Γ1 = 0.26 − 𝑗0.16 + 0.096 − 𝑗0.033

Γ1 = 0.356 − 𝑗0.193 which can also be written as: Γ1 = 0.395𝑒 −𝑗0.498

(b) The ratio of power coupled to the load at Port 2 to the power incident at Port 1 is given by:
2
𝑃𝐿 |𝑉2− |2 −|𝑉2+ |
= 2
𝑃𝑖𝑛 |𝑉1+ |

[Note in the equation above, the first term on the nominator (|𝑉2− |2 ) represents the power incident
at the load at Port 2 and the second term (|𝑉2+ |2) represents the power reflected from the load.
The difference then represents the power coupled to the load.]

Then using the results of part (a) above we can write:


2 2 2 2 2
𝑃𝐿 |2𝑉2+ | −|𝑉2+ | 4|𝑉2+ | −|𝑉2+ | |𝑉2+ |
= 2 = 2 =3 2
𝑃𝑖𝑛 |𝑉1+ | |𝑉1+ | |𝑉1+ |

𝑠 2
𝑃𝐿 |𝑉2+ |
2 | 21 𝑉1+ | 𝑠 2
2−𝑠22 21
=3 2 =3 2 = 3 |2−𝑠 |
𝑃𝑖𝑛 |𝑉1+ | |𝑉1+ | 22
𝑃𝐿 0.42 2 0.42 2
= 3| | = 3| |
𝑃𝑖𝑛 2−(0.36−𝑗0.57) 1.64+𝑗0.57

𝑃𝐿
= 0.176
𝑃𝑖𝑛

Assignment of Microwave Engineering (ETE 4164)


4th year ETE (Full Time & Evening)

Instructions:
1. You will be expected to demonstrate your work and answer all related questions.
2. You can work in groups to exchange ideas but the final submission will be individual.
3. Submit the work to me in my office anytime during office hours between Wednesday 09 and
Friday 11 December 2015. You may call me on 0784151588 or 0722751588 to confirm that
I am in the office.

Question 1.

A load impedance 𝑍𝐿 = 100 − 𝑗75 Ohm is to be matched to a lossless, air-filled


transmission line with a characteristic impedance 𝑍0 = 50 Ohm at a frequency of 3 GHz,
using a quarter-wave transformer and a shunt short-circuited stub at the load. Design the
matching network:

i) What is the characteristic impedance, 𝑍𝑞 , of the quarter-wave line? What is the length,
𝑙𝑞 , of the quarter-wave line, if the line is air-filled?
ii) What is the shortest length, 𝑙𝑠 , of the shunt short-circuited stub at the load, if the stub is
made from an air-filled transmission line of characteristic impedance 𝑍0 = 50 Ohm?

Question 2.

A directional coupler has the scattering matrix below:

0 0.49 𝑗0.4 0
0.49 0 0 𝑗0.4
[𝑆] = [ ]
𝑗0.4 0 0 0.49
0 𝑗0.4 0.49 0

Ports 3 and 4 are terminated in matched loads. Port 1 is connected to a microwave generator and
the incident power at port 1 is 1 W. Answer the following:
(c) What are the power outputs from ports 3 and 4 if port 2 is terminated in a matched
load?
(d) What are the power outputs from ports 3 and 4 if port 2 is terminated in a short circuit?
(e) What are the power outputs from ports 3 and 4 if port 2 is terminated in an open
circuit?
(f) What is the coupling factor of this directional coupler in dB?

Question 3.

A certain three-port network has the following scattering matrix:

0 0 1
[𝑆] = [1 0 0]
0 1 0

Answer the following:

i) What is the reflection coefficient at port 1 if matched loads terminate ports 2 and 3?
What is the ratio of power out of port 2 to power incident on port 1 under this condition?
What is the ratio of power out of port 3 to power incident on port 1?
ii) What is the reflection coefficient at port 1, if port 2 is terminated by a short circuit and
port 3 is terminated by a matched load?
iii) What is the reflection coefficient at port 1, if port 2 is terminated by a short circuit and
port 3 is terminated by an open circuit?

Question 4.

Discuss the following microwave devices:

- Impatt diode
- Tunnel diode
- Heterojunction Bipolar Transistor (HBT)
- High Electron Mobility Transistor (HEMT)
- Magnetrons
- Klystrons
- Travelling-Wave Tube
- Inductive Output Tube.
a) A certain three-port network has the following scattering matrix:
What is the reflection coefficient at port 1 if matched loads terminate ports 2 and 3?
What is the ratio of power out of port 2 to power incident on port 1 under this
condition? What is the ratio of power out of port 3 to power incident on port 1?
(12marks)

b) With a specific example, define compound semi-conductors as utilized in microwave


engineering. Why GaAs-based semiconductors are more preferable in microwave
device manufacturing? (5marks)
c) Talk briefly about Ku- and Ka- bands of electromagnetic frequencies with their
applications.

 The reflection coefficient at port 1 if matched loads terminate ports 2 and 3: The
scattering matrix relates the voltages reflected from the ports to the voltages incident on
the ports:

Since ports 2 and 3 are matched, and are zero for this case:

From the first row of the matrix equation above we can write:

Then the reflection coefficient at port 1 becomes:






The ratio of power out of port 2 to power incident on port 1
under the given condition:
DIRECTIONAL COUPLERS
Most directional couplers are characterized by its “coupling” as defined below:
T-Junction Power Dividers.
EXAMPLE: OF T-Junction Power Dividers
Network Analyzer:
The network analyzer is perhaps the most useful instrument for microwave
measurements.

It is used to measure the s-parameters of a microwave component or network, typically


over a band of frequencies.

The measurements may be scalar in nature, i.e., only the magnitude of the s-parameters
is measured.
Otherwise, a vector network analyzer is used to measure both the magnitude and
phase of the s-parameters. The s-parameters are derived by the measurement of
incident, reflected and transmitted signals.

A vector network analyzer is essentially a multichannel microwave


transmitter/receiver to measure the amplitude and phase of transmitted and reflected
signals from a network.
A four-port reflectometer samples the incident, reflected and transmitted microwave
signals.
A switch allows the network to be driven from either port 1 or port 2 for quick
measurement of two-port networks. These signals are down-converted twice to
produce final IF signals at 100 kHz, which are then detected (i.e., rectified) and
converted into digital form.

A powerful internal computer is used to calculate and display the magnitude and
phase of the s-parameters, typically on a Smith chart. Other quantities that can be
derived from the s-parameters, such as VSWR, return loss, impedance, etc. can also be
displayed.

END

S-ar putea să vă placă și