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DC ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2
and RL = 10 kto VDD/2.
Parameters Sym. Min. Typ. Max. Units Conditions
Input Offset
Input Offset Voltage:
Industrial Temperature Parts VOS -500 — +500 µV VCM = 0V
Extended Temperature Parts VOS -250 — +250 µV VCM = 0V, VDD = 5.0V
Extended Temperature Parts VOS -2.5 — +2.5 mV VCM = 0V, VDD = 5.0V,
TA = -40°C to +125°C
Input Offset Voltage Temperature Drift VOS/TA — ±3.5 — µV/°C TA = -40°C to +125°C
Power Supply Rejection Ratio PSRR 74 90 — dB VCM = 0V
Input Current and Impedance
Input Bias Current: IB — 1 — pA
Industrial Temperature Parts IB — 30 150 pA TA = +85°C
Extended Temperature Parts IB — 640 5,000 pA TA = +125°C
Input Offset Current IOS — ±1 — pA
Common-Mode Input Impedance ZCM — 1013||6 — ||pF
Differential Input Impedance ZDIFF — 1013||3 — ||pF
Common-Mode
Common-Mode Input Range VCMR VSS – 0.3 — VDD + 0.3 V
Common-Mode Rejection Ratio CMRR 74 90 — dB VDD = 5V, VCM = -0.3V to 5.3V
CMRR 70 85 — dB VDD = 5V, VCM = 3.0V to 5.3V
CMRR 74 90 — dB VDD = 5V, VCM = -0.3V to 3.0V
Voltage Reference (MCP6021 and MCP6023 only)
VREF Accuracy (VREF – VDD/2) VREF_ACC -50 — +50 mV
VREF Temperature Drift VREF/TA — ±100 — µV/°C TA = -40°C to +125°C
Open-Loop Gain
DC Open-Loop Gain (Large Signal) AOL 90 110 — dB VCM = 0V,
VOUT = VSS + 0.3V to VDD – 0.3V
Output
Maximum Output Voltage Swing VOL, VOH VSS + 15 — VDD – 20 mV 0.5V input overdrive
Output Short Circuit Current ISC — ±30 — mA VDD = 2.5V
ISC — ±22 — mA VDD = 5.5V
Power Supply
Supply Voltage VDD 2.5 — 5.5 V
Quiescent Current per Amplifier IQ 0.5 1.0 1.35 mA IO = 0
AC Response
Gain Bandwidth Product GBWP — 10 — MHz
Phase Margin PM — 65 — ° G = +1 V/V
Settling Time, 0.2% tSETTLE — 250 — ns G = +1 V/V, VOUT = 100 mVp-p
Slew Rate SR — 7.0 — V/µs
Total Harmonic Distortion Plus Noise
f = 1 kHz, G = +1 V/V THD + N — 0.00053 — % VOUT = 0.25V to 3.25V (1.75V ± 1.50VPK),
VDD = 5.0V, BW = 22 kHz
f = 1 kHz, G = +1 V/V, RL = 600 THD + N — 0.00064 — % VOUT = 0.25V to 3.25V (1.75V ± 1.50VPK),
VDD = 5.0V, BW = 22 kHz
f = 1 kHz, G = +1 V/V THD + N — 0.0014 — % VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz
f = 1 kHz, G = +10 V/V THD + N — 0.0009 — % VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz
f = 1 kHz, G = +100 V/V THD + N — 0.005 — % VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz
Noise
Input Noise Voltage Eni — 2.9 — µVp-p f = 0.1 Hz to 10 Hz
Input Noise Voltage Density eni — 8.7 — nV/Hz f = 10 kHz
Input Noise Current Density ini — 3 — fA/Hz f = 1 kHz
CS Low Specifications
CS Logic Threshold, Low VIL VSS — 0.2 VDD V
CS Input Current, Low ICSL -1.0 0.01 — µA CS = VSS
CS High Specifications
CS Logic Threshold, High VIH 0.8 VDD — VDD V
CS Input Current, High ICSH — 0.01 2.0 µA CS = VDD
GND Current ISS -2 -0.05 — µA CS = VDD
Amplifier Output Leakage IO(LEAK) — 0.01 — µA CS = VDD
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time tON — 2 10 µs G = +1, VIN = VSS,
CS = 0.2 VDD to VOUT = 0.45 VDD time
CS High to Amplifier Output High-Z Time tOFF — 0.01 — µs G = +1, VIN = VSS,
CS = 0.8 VDD to VOUT = 0.05 VDD time
Hysteresis VHYST — 0.6 — V VDD = 5.0V, internal switch
Temperature Ranges
Industrial Temperature Range TA -40 — +85 °C
Extended Temperature Range TA -40 — +125 °C
Operating Temperature Range TA -40 — +125 °C (Note 1)
Storage Temperature Range TA -65 — +150 °C
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23 JA — 256 — °C/W
Thermal Resistance, 8L-PDIP JA — 85 — °C/W
Thermal Resistance, 8L-SOIC JA — 163 — °C/W
Thermal Resistance, 8L-MSOP JA — 206 — °C/W
Thermal Resistance, 8L-TSSOP JA — 124 — °C/W
Thermal Resistance, 14L-PDIP JA — 70 — °C/W
Thermal Resistance, 14L-SOIC JA — 120 — °C/W
Thermal Resistance, 14L-TSSOP JA — 100 — °C/W
Note 1: The industrial temperature devices operate over this Extended temperature range, but with reduced performance. In any
case, the internal Junction Temperature (TJ) must not exceed the absolute maximum specification of +150°C.
-1 mA VDD
ISS -50 nA (typical) VIN RN 0.1 µF 1 µF
-50 nA
(typical) (typical) CB1 CB2 VOUT
ICS 1 k:
MCP6021
10 nA 10 nA 10 nA
(typical) (typical) (typical) CL RL
60 pF 10 k:
VDD/2 RG RF
FIGURE 1-1: Timing Diagram for the CS VL
2 k: 2 k:
Pin on the MCP6023.
FIGURE 1-2: AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
VDD
VDD/2 RN 0.1 µF 1 µF
CB1 CB2 VOUT
1 k:
MCP6021
CL RL
60 pF 10 k:
VIN RG RF
VL
2 k: 2 k:
FIGURE 1-3: AC and DC Test Circuit for
Most Inverting Gain Conditions.
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2,
RL = 10 k to VDD/2 and CL = 60 pF.
16%
24%
Percentage of Occurances
Percentage of Occurances
TA = +25°C 20% I-Temp VCM = 0V
12% 18% Parts TA = -40°C to +85°C
10% 16%
14%
8% 12%
6% 10%
8%
4% 6%
2% 4%
2%
0% 0%
100
200
300
400
500
-500
-400
-300
-200
-100
-8
-4
8
-20
-16
-12
12
16
20
Input Offset Voltage (µV) Input Offset Voltage Drift (µV/°C)
FIGURE 2-1: Input Offset Voltage FIGURE 2-4: Input Offset Voltage Drift
(Industrial Temperature Parts). (Industrial Temperature Parts).
24%
24%
Percentage of Occurances
E-Temp VCM = 0V
Parts VDD = 5.0V 20% Parts
20% TA = -40°C to +125°C
VCM = 0V 18%
18% TA = +25°C
16% 16%
14% 14%
12% 12%
10% 10%
8% 8%
6% 6%
4% 4%
2% 2%
0%
0%
120
160
200
240
-80
-40
-240
-200
-160
-120
0
40
80
-20
-16
-12
-8
-4
12
16
20
Input Offset Voltage (µV) Input Offset Voltage Drift (µV/°C)
FIGURE 2-2: Input Offset Voltage FIGURE 2-5: Input Offset Voltage Drift
(Extended Temperature Parts). (Extended Temperature Parts).
500 500
-40°C
400 VDD = 2.5V
Input Offset Voltage (µV)
400
Input Offset Voltage (µV)
FIGURE 2-3: Input Offset Voltage vs. FIGURE 2-6: Input Offset Voltage vs.
Common-Mode Input Voltage with VDD = 2.5V. Common-Mode Input Voltage with VDD = 5.5V.
100 200
VCM = VDD/2
Input Offset Voltage (µV)
-200 -100
VDD = 5.0V
-250 VCM = 0V -150
-300 -200
-50 -25 0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Ambient Temperature (°C) Output Voltage (V)
FIGURE 2-7: Input Offset Voltage vs. FIGURE 2-10: Input Offset Voltage vs.
Temperature. Output Voltage.
1,000 24
22 VDD = 5.0V
20
18
100 16
(nV/√Hz)
(nV/√Hz)
14 f = 1 kHz
12
10
8
10 6 f = 10 kHz
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-0.5
FIGURE 2-8: Input Noise Voltage Density FIGURE 2-11: Input Noise Voltage Density
vs. Frequency. vs. Common-Mode Input Voltage.
110
100
PSRR+ 105
90 PSRR-
CMRR
PSRR, CMRR (dB)
CMRR, PSRR (dB)
80 100
70 95
60 90
CMRR 85 PSRR (VCM = 0V)
50
40 80
30 75
FIGURE 2-9: CMRR, PSRR vs. FIGURE 2-12: CMRR, PSRR vs.
Frequency. Temperature.
10,000
Input Bias, Offset Currents
IB, TA = +85°C
100 100 IB
10 10 IOS
IOS, TA = +85°C
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 1
Common Mode Input Voltage (V) 25 35 45 55 65 75 85 95 105 115 125
Ambient Temperature (°C)
FIGURE 2-13: Input Bias, Offset Currents FIGURE 2-16: Input Bias, Offset Currents
vs. Common-Mode Input Voltage. vs. Temperature.
1.2
1.2
1.1
1.1
1.0 1.0 VDD = 5.5V
Quiescent Current
Quiescent Current
0.9 0.9
(mA/amplifier)
(mA/amplifier)
FIGURE 2-14: Quiescent Current vs. FIGURE 2-17: Quiescent Current vs.
Supply Voltage. Temperature.
35 120 0
110 -15
Output ShortCircuit Current
30 100 -30
90 -45
25 80 -60
70 Phase -75
20 60 -90
(mA)
50 -105
15 40 -120
+125°C
+85°C 30 -135
10 Gain
+25°C 20 -150
-40°C 10 -165
5 0 -180
-10 -195
0 -20 1.E+00 1.E+01 1.E+02 1.E+03 -210
1.E+04 1.E+05 1.E+06 1.E+07 1.E+08
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 1 10 100 1k 10k 100k 1M 10M 100M
Supply Voltage (V) Frequency (Hz)
FIGURE 2-15: Output Short-Circuit Current FIGURE 2-18: Open-Loop Gain, Phase vs.
vs. Supply Voltage. Frequency.
130 120
115
120 VDD = 5.5V
110
110
VDD = 2.5V
105
100 VDD = 2.5V
100
90
95
90
100 1k 10k 100k
Ω)
Load Resistance (Ω -50 -25 0 25 50 75 100 125
Ambient Temperature (°C)
FIGURE 2-19: DC Open-Loop Gain vs. FIGURE 2-22: DC Open-Loop Gain vs.
Load Resistance. Temperature.
120 14 105
DC Open-Loop Gain (dB)
VCM = VDD/2
2 15
70 VDD = 5.0V
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 0
Output Voltage Headroom (V); 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDD - VOH or VOL - VSS Common Mode Input Voltage (V)
FIGURE 2-20: Small Signal DC Open-Loop FIGURE 2-23: Gain Bandwidth Product,
Gain vs. Output Voltage Headroom. Phase Margin vs. Common-Mode Input Voltage.
10 100 14 105
Gain Bandwidth Product (MHz)
9 90
FIGURE 2-21: Gain Bandwidth Product, FIGURE 2-24: Gain Bandwidth Product,
Phase Margin vs. Temperature. Phase Margin vs. Output Voltage.
11 10
10 Falling, VDD = 5.5V
Swing (VP-P)
7 VDD = 2.5V
6
5 1
4 Falling, VDD = 2.5V
3 Rising, VDD = 2.5V
2
1
0
-50 -25 0 25 50 75 100 125 0.1 1.E+04 1.E+05 1.E+06 1.E+07
FIGURE 2-25: Slew Rate vs. Temperature. FIGURE 2-28: Maximum Output Voltage
Swing vs. Frequency.
0.1000% 0.1000%
f = 1 kHz G = +100 V/V
BWMeas = 22 kHz
VDD = 5.0V
THD+N (%)
THD+N (%)
G = +100 V/V 0.0100%
G = +10 V/V
0.0010% 0.0010% G = +1 V/V
f = 20 kHz
BWMeas = 80 kHz
VDD = 5.0V
G = +1 V/V
0.0001%
0.0001%
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Output Voltage (VP-P)
Output Voltage (VP-P)
FIGURE 2-26: Total Harmonic Distortion FIGURE 2-29: Total Harmonic Distortion
plus Noise vs. Output Voltage with f = 1 kHz. plus Noise vs. Output Voltage with f = 20 kHz.
6
135
Channel-to-Channel Separation
VDD = 5.0V
VOUT G = +2 V/V
Input, Output Voltage (V)
5
130
4 VIN
125
3
(dB)
120
2
115
1
110
0 G = +1 V/V
105 1.E+03 1.E+04 1.E+05 1.E+06
-1 1k 10k 100k 1M
Frequency (Hz)
0 10 20 Time
30 (10
40 µs/div)
50 60 70 80 90 100
1,000 10
9 VOL – VSS
8
100 7
6
VDD – VOH
5
4
10 VOL – VSS 3
2
VDD – VOH 1
1 0
0.01 0.1 1 10 -50 -25 0 25 50 75 100 125
Output Current Magnitude (mA) Ambient Temperature (°C)
FIGURE 2-31: Output Voltage Headroom FIGURE 2-34: Output Voltage Headroom
vs. Output Current. vs. Temperature.
6.E-02
6.E-02
5.E-02
G = +1 V/V 5.E-02
G = -1 V/V
Output Voltage (10 mV/div)
RF = 1 kΩ
3.E-02 3.E-02
2.E-02
2.E-02
1.E-02
1.E-02
0.E+00
0.E+00
-1.E-02
-1.E-02
-2.E-02
-2.E-02
-3.E-02
-3.E-02
-4.E-02
-4.E-02
-5.E-02
-5.E-02
-6.E-02
0.E+00 2.E-07 4.E-07 6.E-07 8.E-07 1.E-06 1.E-06 1.E-06 2.E-06 2.E-06 2.E-06
-6.E-02
0.E+00 2.E-07 4.E-07 6.E-07 8.E-07 1.E-06 1.E-06 1.E-06 2.E-06 2.E-06 2.E-06
Time (200 ns/div)
Time (200 ns/div)
FIGURE 2-32: Small Signal Non-Inverting FIGURE 2-35: Small Signal Inverting Pulse
Pulse Response. Response.
5.0 5.0
G = +1 V/V G = -1 V/V
4.5 4.5 RF = 1 kΩ
4.0 4.0
Output Voltage (V)
3.5 3.5
3.0 3.0
2.5 2.5
2.0 2.0
1.5 1.5
1.0
1.0
0.5
0.5
0.0 0.E+00 5.E-07 1.E-06 2.E-06 2.E-06 3.E-06 3.E-06 4.E-06 4.E-06 5.E-06 5.E-06
0.0 0.E+00 5.E-07 1.E-06 2.E-06 2.E-06 3.E-06 3.E-06 4.E-06 4.E-06 5.E-06 5.E-06
Time (500 ns/div)
Time (500 ns/div)
FIGURE 2-33: Large Signal Non-Inverting FIGURE 2-36: Large Signal Inverting Pulse
Pulse Response. Response.
50 50
40 40 Representative Part
30 30
VREF – VDD/2 (mV)
VREF Accuracy;
20 20 VDD = 5.5V
10 10
0 0
-10 -10 VDD = 2.5V
-20 -20
-30 -30
-40 -40
-50 -50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -50 -25 0 25 50 75 100 125
Power Supply Voltage (V) Ambient Temperature (°C)
FIGURE 2-37: VREF Accuracy vs. Supply FIGURE 2-40: VREF Accuracy vs.
Voltage (MCP6021 and MCP6023 only). Temperature (MCP6021 and MCP6023 only).
1.6 1.6
Op Amp Op Amp
1.4 Op Amp Op Amp
shuts off here 1.4 turns on here
turns on here shuts off here
Quiescent Current
1.2
(mA/amplifier)
1.2
Quiescent Current
(mA/amplifier)
1.0 Hysteresis
CS swept Hysteresis 1.0
0.8 high to low CS swept
0.8
0.6 high to low CS swept
CS swept 0.6 low to high
0.4 VDD = 2.5V low to high
G = +1 V/V 0.4 VDD = 5.5V
0.2 VIN = 1.25V G = +1 V/V
0.2 VIN = 2.75V
0.0
0.0 0.5 1.0 1.5 2.0 2.5 0.0
Chip Select Voltage (V) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Chip Select Voltage (V)
FIGURE 2-38: Chip Select (CS) Hysteresis FIGURE 2-41: Chip Select (CS) Hysteresis
(MCP6023 only) with VDD = 2.5V. (MCP6023 only) with VDD = 5.5V.
5.5
5.0 VDD = 5.0V 10m
1.E-02
Input Current Magnitude (A)
G = +1 V/V 1m
4.5 CS Voltage
VIN = VSS
1.E-03
Chip Select Voltage,
Output Voltage (V)
4.0 100µ
1.E-04
3.5 10µ
1.E-05
3.0 VOUT 1µ
1.E-06
2.5 100n
1.E-07
2.0
10n
1.E-08
1.5 Output Output High-Z Output
1n +125°C
1.0 on on 1.E-09
+85°C
0.5 100p
1.E-10 +25°C
0.0 10p -40°C
1.E-11
-0.5 0.0E+00 5.0E-06 1.0E-05 1.5E-05 2.0E-05 2.5E-05 3.0E-05 3.5E-05
1p
1.E-12
Time (5 µs/div)
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
Input Voltage (V)
FIGURE 2-39: Chip Select (CS) to
Amplifier Output Response Time (MCP6023 FIGURE 2-42: Measured Input Current vs.
Only). Input Voltage (Below VSS)
RF
CG
VIN RISO RG
MCP602X VOUT
CL
FIGURE 4-6: Non-Inverting Gain Circuit
with Parasitic Capacitance.
FIGURE 4-4: Output Resistor, RISO, The largest value of RF in Figure 4-6 that should be
Stabilizes Large Capacitive Loads. used is a function of noise gain (see GN in Section 4.3
“Capacitive Loads”) and CG. Figure 4-7 shows results
Figure 4-5 gives recommended RISO values for for various conditions. Other compensation techniques
different capacitive loads and gains. The x-axis is the may be used, but they tend to be more complicated to
normalized load capacitance (CL/GN), where GN is the design.
circuit’s noise gain. For non-inverting gains, GN and the
Signal Gain are equal. For inverting gains, GN is 1.E+05
100k
GN > +1 V/V
1+|Signal Gain| (e.g., -1 V/V gives GN = +2 V/V).
Maximum RF (W)
1,000 1.E+04
10k CG = 7 pF
CG = 20 pF
GN ≥ +1
Recommended RISO (Ω)
1.E+03
1k
CG = 50 pF
100 CG = 100 pF
1.E+02
100
1 10
Noise Gain; GN (V/V)
FIGURE 4-5: Recommended RISO Values 4.5 MCP6023 Chip Select (CS)
for Capacitive Loads. The MCP6023 is a single amplifier with Chip Select
After selecting RISO for your circuit, double-check the (CS). When CS is pulled high, the supply current drops
resulting frequency response peaking and step to 10 nA (typical) and flows through the CS pin to VSS.
response overshoot. Modify RISO’s value until the When this happens, the amplifier output is put into a
response is reasonable. Evaluation on the bench and high-impedance state. By pulling CS low, the amplifier
simulations with the MCP6021/1R/2/3/4 Spice macro is enabled. The CS pin has an internal 5 MΩ (typical)
model are helpful. pull-down resistor connected to VSS, so it will go low if
the CS pin is left floating. Figure 1-1 and Figure 2-39
show the output voltage and supply current response to
a CS pulse.
VDD
VOUT R1
CB VREF
VREF
VIN R2
MCP6021 MCP6021
OR
I/P256 E/P e3 256
1603 1603
MCP6021 OR MCP6021E
I/SN1603 SN e3 1603
256 256
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
6021E
903256
6021
E903
256
MCP6024-I/P
0903256
OR
MCP6024-E/P e3
0903256
MCP6024-I/SL
1603256
OR
MCP6024
E/SL e3
1603256
6024E
1603
256
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
0.20 C 2X
D
e1
A D
E/2
E1/2
E1 E
(DATUM D)
(DATUM A-B)
0.15 C D
2X
NOTE 1 1 2
B NX b
0.20 C A-B D
TOP VIEW
A A2
0.20 C
SEATING PLANE
A
SEE SHEET 2 C
A1
SIDE VIEW
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
T
L
L1
VIEW A-A
SHEET 1
Units MILLIMETERS
Dimension Limits MIN NOM MAX
Number of Pins N 6
Pitch e 0.95 BSC
Outside lead pitch e1 1.90 BSC
Overall Height A 0.90 - 1.45
Molded Package Thickness A2 0.89 - 1.30
Standoff A1 - - 0.15
Overall Width E 2.80 BSC
Molded Package Width E1 1.60 BSC
Overall Length D 2.90 BSC
Foot Length L 0.30 - 0.60
Footprint L1 0.60 REF
Foot Angle I 0° - 10°
Lead Thickness c 0.08 - 0.26
Lead Width b 0.20 - 0.51
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed 0.25mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
5 SILK SCREEN
Z C G
1 2
E
GX
Units MILLIMETERS
Dimension Limits MIN NOM MAX
Contact Pitch E 0.95 BSC
Contact Pad Spacing C 2.80
Contact Pad Width (X5) X 0.60
Contact Pad Length (X5) Y 1.10
Distance Between Pads G 1.70
Distance Between Pads GX 0.35
Overall Width Z 3.90
Notes:
1. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing No. C04-2091A [OT]
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D A
N B
E1
NOTE 1
1 2
TOP VIEW
C A A2
PLANE
L c
A1
e eB
8X b1
8X b
.010 C
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DATUM A DATUM A
b b
e e
2 2
e e
Units INCHES
Dimension Limits MIN NOM MAX
Number of Pins N 8
Pitch e .100 BSC
Top to Seating Plane A - - .210
Molded Package Thickness A2 .115 .130 .195
Base to Seating Plane A1 .015 - -
Shoulder to Shoulder Width E .290 .310 .325
Molded Package Width E1 .240 .250 .280
Overall Length D .348 .365 .400
Tip to Seating Plane L .115 .130 .150
Lead Thickness c .008 .010 .015
Upper Lead Width b1 .040 .060 .070
Lower Lead Width b .014 .018 .022
Overall Row Spacing § eB - - .430
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. § Significant Characteristic
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed .010" per side.
4. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
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Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
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Note: For the most current package drawings, please see the Microchip Packaging Specification located at
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Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
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• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.