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Characteristics of
1
MOSFETs
Lecture# 14
VLSI Design
2 nMOS IV Equations
𝐼 𝑉 𝑉
𝛽 is device transconductance, 𝛽 𝑘
𝑘 is process transconductance, 𝑘 𝜇 𝐶
𝑘 as 𝐶
Class Exercise 1
𝐼 𝑉 𝑉 saturation current
when 𝑉 𝑉 𝑉
𝐼 𝑉 𝑉 1 𝜆 𝑉 𝑉
Class Exercise 2
𝑄 0 𝐶 𝑉 𝑉 0 L
𝑄 𝐿 𝐶 𝑉 𝑉 𝑉
𝐼 𝐿 𝜇 𝑊𝐶 𝑉 𝑉 𝑉
𝐼 𝜇 𝐶 𝑉 𝑉 𝑉
At transition point 𝑄 𝐿 𝑄 𝐶 𝑉 𝑉 𝑉 0
Channel vanishes near the drain
Known as channel-pinch off
Results in saturation mode and channel-length modulation