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2SJ380
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)

2SJ380
Relay Drive, DC-DC Converter and Motor Drive
Applications Unit: mm

• 4-V gate drive

• Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)
• High forward transfer admittance: |Yfs| = 7.7 S (typ.)
• Low leakage current: IDSS = −100 μA (max) (VDS = −100 V)
• Enhancement mode: Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS −100 V

Drain-gate voltage (RGS = 20 kΩ) VDGR −100 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID −12
Drain current A
Pulse (Note 1) IDP −48
JEDEC ―
Drain power dissipation (Tc = 25°C) PD 35 W
JEITA SC-67
Single pulse avalanche energy
EAS 312 mJ
(Note 2) TOSHIBA 2-10R1B
Avalanche current IAR −12 A
Weight: 1.9 g (typ.)
Repetitive avalanche energy (Note 3) EAR 3.5 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch-c) 3.57 °C/W

Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W

Note1: Ensure that the channel temperature does not exceed 150°C.

Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.94 mH, RG = 25 Ω, IAR = −12 A

Note 3: Repetitive rating: pulse width limited by maximum junction temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

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2SJ380
Electrical Characteristics (Tc = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA

Drain cut-off current IDSS VDS = −100 V, VGS = 0 V ⎯ ⎯ −100 μA
Drain-source breakdown voltage V (BR) DSS ID = −10 mA, VGS = 0 V −100 ⎯ ⎯ V
Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 V
VGS = −4 V, ID = −6 A ⎯ 0.25 0.32
Drain-source ON resistance RDS (ON) Ω
VGS = −10 V, ID = −6 A ⎯ 0.15 0.21
Forward transfer admittance ⎪Yfs⎪ VDS = −10 V, ID = −6 A 4.5 7.7 ⎯ S
Input capacitance Ciss ⎯ 1100 ⎯ pF
Reverse transfer capacitance Crss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 200 ⎯ pF
Output capacitance Coss ⎯ 440 ⎯ pF

Rise time tr ⎯ 18 ⎯
ID = −6 A
0V
VGS VOUT
⎯ ⎯

RL = 8.3 Ω
Turn-on time ton −10 V 30

Switching time ns
50 Ω

Fall time tf ⎯ 18 ⎯
VDD ∼
− −50 V

Turn-off time toff ⎯ 65 ⎯

Duty <
= 1%, tw = 10 μs
Total gate charge
Qg ⎯ 48 ⎯ nC
(gate-source plus gate-drain) VDD ∼− −80 V, VGS = −10 V,
Gate-source charge Qgs ID = −12 A ⎯ 29 ⎯ nC
Gate-drain (“miller”) charge Qgd ⎯ 19 ⎯ nC

Source-Drain Ratings and Characteristics (Tc = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

IDR ⎯ ⎯ ⎯ −12 A
(Note 1)
Pulse drain reverse current
IDRP ⎯ ⎯ ⎯ −48 A
(Note 1)
Forward voltage (diode) VDSF IDR = −12 A, VGS = 0 V ⎯ ⎯ 1.7 V
Reverse recovery time trr IDR = −12 A, VGS = 0 V ⎯ 160 ⎯ ns
Reverse recovery charge Qrr dIDR/dt = 50 A/μs ⎯ 0.5 ⎯ μC

Marking

J380 Part No. (or abbreviation code)

Lot No.

Characteristics A line indicates

indicator lead (Pb)-free package or
lead (Pb)-free finish.

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2SJ380

ID – VDS ID – VDS
−5 −20
Common source −4 −3 Common source
Tc = 25°C Tc = 25°C −8
Pulse test −8 Pulse test
−4 −16 −6
−10 −6

(A)
Drain current ID (A)

−4
−10

Drain Current ID
−3 −12
−3.5

−2.5
−2 −8
−3

−1 −4
−2.5
VGS = −2 V
VGS = −2 V
0 0
0 −0.4 −0.8 −1.2 −1.6 −2.0 0 −2 −4 −6 −8 −10

Drain-source voltage VDS (V) Drain-source voltage VDS (V)

ID – VGS VDS – VGS

−10 −3.2
Common source
Common source
VDS = −10 V
Tc = 25°C
Pulse test
VDS (V)

−8 Pulse test
25
−2.4
Drain current ID (A)

Tc = −55°C
100
−6
Drain-source voltage

−1.6 ID = −8 A

−4

−4
−0.8
−2
−2

0 0
0 −1 −2 −3 −4 −5 −6 0 −4 −8 −12 −16 −20

Gate-source voltage VGS (V) Gate-source voltage VGS (V)

⎪Yfs⎪ – ID
RDS (ON) – ID
30
(S)

2.0
Common source Common source
VDS = −10 V Tc = 25°C
Forward transfer admittance ⎪Yfs⎪

1.0
Drain–source ON resistance

Pulse test Pulse test

Tc = −55°C
10
0.5
RDS (ON) (Ω)

25 0.3 VGS = −4 V
5 100

3 −10
0.1

0.05

1 0.03
−0.3 −1.0 −3 −10 −20 −0.1 −0.3 −1.0 −3 −10 −20

Drain current ID (A) Drain current ID (A)

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2SJ380

RDS (ON) – Tc IDR – VDS

0.5 −30
(Ω)

Common source Common source

Pulse test Tc = 25°C
ID = −8 A
Drain-source ON resistance RDS (ON)

(A)
0.4 Pulse test
−4 −8 −10

Drain reverse current IDR

0.3 −5
VGS = −10 V
−2, −4 −3

0.2 VGS = −4 V −2
−3
−2
−1
0.1
VGS = −10 V −5
−0.5 0, 1
−1
0 −0.3
−80 −40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1.0

Case temperature Tc (°C) Drain-source voltage VDS (V)

Capacitance – VDS Vth – Tc

5000 −4
Common source
3000
VDS = −10 V
ID = −1 mA
Vth (V)
(pF)

Ciss Pulse test

1000 −3
Capacitance C

500
Gate threshold voltage

300 Coss
−2
Common source
100 VGS = 0 V
Crss
f = 1 MHz
50 −1
Tc = 25°C
30
−0.1 −0.3 −1 −3 −10 −30 −100

Drain-source voltage VDS (V)

0
−80 −40 0 40 80 120 160

Case temperature Tc (°C)

PD – Tc Dynamic Input/Output Characteristics

40 −100 −20
Common source
ID = −12 A
Tc = 25°C
Drain power dissipation PD (W)

Pulse test
VDS (V)

VGS (V)

−80 −16
30

VDS
−60 −12
VDD = −80 V
Drain-source voltage

Gate-source voltage

20 −20 V
−40 −40 V −8

10
−20 −4
VGS

0 0 0
0 40 80 120 160 0 20 40 60 80 100

Case temperature Tc (°C) Total gate charge Qg (nC)

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2SJ380

rth – tw
3

Normalized transient thermal impedance

1
Duty = 0.5
0.5
0.3 0.2
rth (t)/Rth (ch-c)

0.1
0.1 0.05
0.05 PDM
0.02
0.03 0.01 t
Single pulse
T
0.01
Duty = t/T
0.005 Rth (ch-c) = 3.57°C/W
0.003
10 μ 100 μ 1m 10 m 100 m 1 10

Pulse width tw (s)

Safe Operating Area EAS – Tch

−100 500

IC max (pulsed)*
−50
Avalanche energy EAS (mJ)

100 μs* 400

−30

1 ms*
ID max (continuous)
10 ms* 300
Drain current ID (A)

−10

−5 200
−3
DC operation
Tc = 25°C 100

−1

0
−0.5 *: Single nonrepetitive 25 50 75 100 125 150
pulse Tc = 25°C
−0.3
Channel temperature (initial) Tch (°C)
Curves must be derated
linearly with increase in
temperature. VDSS max
−0.1
−1 −3 −10 −30 −100 −300

Drain-source voltage VDS (V) BVDSS

15 V
−15 V IAR

VDD VDS

Test circuit Wave form

RG = 25 Ω 1 2 ⎛ B VDSS ⎞
Ε AS = ·L·I · ⎜⎜ ⎟
⎟
VDD = −25 V, L = 2.94 mH 2 B
⎝ VDSS − V DD ⎠

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2SJ380

RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.

• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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