16 A NPN Power Transistors 140 V, 150 W

2N3773
NPN Power Transistors

The 2N3773 is a PowerBaset power transistor designed for high
power audio, disk head positioners and other linear applications. This
device can also be used in power switching circuits such as relay or
solenoid drivers, DC−DC converters or inverters.
Features http://onsemi.com
• High Safe Operating Area (100% Tested) 150 W @ 100 V

• Completely Characterized for Linear Operation 16 A NPN
• High DC Current Gain and Low Saturation Voltage POWER TRANSISTORS
hFE = 15 (Min) @ 8.0 A, 4.0 V 140 V, 150 W
VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A
• For Low Distortion Complementary Designs
• This is a Pb−Free Device MARKING
DIAGRAM
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Collector − Emitter Voltage VCEO 140 Vdc 2N3773G
MEX
Collector − Emitter Voltage VCEX 160 Vdc AYYWW
TO−204
Collector − Base Voltage VCBO 160 Vdc CASE 1−07
Emitter − Base Voltage VEBO 7 Vdc
Collector Current IC Adc
− Continuous 16 A = Assembly Location
− Peak (Note 2) 30 YY = Year
Base Current IB Adc WW = Work Week
− Continuous 4 G = Pb−Free Package
− Peak (Note 2) 15
Total Power Dissipation @ TA = 25°C PD 150 W
Derate above 25°C 0.855 W/°C ORDERING INFORMATION
See detailed ordering and shipping information in the package
Operating and Storage Junction TJ, Tstg −65 to +200 °C
dimensions section on page 2 of this data sheet.
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, RqJC 1.17 °C/W
Junction−to−Case
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

April, 2013 − Rev. 11 2N3773/D
2N3773
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS (Note 3)
Collector−Emitter Breakdown Voltage (Note 4) VCEO(sus) 140 − Vdc
(IC = 0.2 Adc, IB = 0)
Collector−Emitter Sustaining Voltage (Note 4) VCEX(sus) 160 − Vdc
(IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms)
Collector−Emitter Sustaining Voltage VCER(sus) 150 − Vdc
(IC = 0.2 Adc, RBE = 100 Ohms)
Collector Cutoff Current (Note 4) ICEO − 10 mAdc
(VCE = 120 Vdc, IB = 0)
Collector Cutoff Current (Note 4) ICEX mAdc
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc) − 2
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) − 10
Collector Cutoff Current ICBO − 2 mAdc
(VCB = 140 Vdc, IE = 0)
Emitter Cutoff Current (Note 4) IEBO − 5 mAdc
(VBE = 7 Vdc, IC = 0)
ON CHARACTERISTICS (Note 3)
DC Current Gain hFE −
(IC = 8 Adc, VCE = 4 Vdc) (Note 4) 15 60
(IC = 16 Adc, VCE = 4 Vdc) 5 −
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 8 Adc, IB = 800 mAdc) (Note 4) − 1.4
(IC = 16 Adc, IB = 3.2 Adc)
− 4
Base−Emitter On Voltage (Note 4) VBE(on) − 2.2 Vdc
(IC = 8 Adc, VCE = 4 Vdc)
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Magnitude of Common−Emitter
ÎÎÎÎÎÎ
Small−Signal, Short−Circuit, Forward Current Transfer Ratio
|hfe| 4 − −
(IC = 1 A, f = 50 kHz)
Small−Signal Current Gain (Note 4) hfe 40 − −
(IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz)
SECOND BREAKDOWN CHARACTERISTICS
Second Breakdown Collector Current with Base Forward Biased IS/b 1.5 − Adc
t = 1 s (non−repetitive), VCE = 100 V, See Figure 12
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
4. Indicates JEDEC Registered Data.
ORDERING INFORMATION
Device Package Shipping†
2N3773G TO−204 100 Unit / Tray
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
http://onsemi.com
2
2N3773
NPN PNP
300 300
200 150°C 200 150°C
25°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN

100 100
-55°C -55°C
70 25°C 70
50 50
30 VCE = 4 V 30 VCE = 4 V
20 20
10 10
7.0 7.0
5.0 5.0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain Figure 2. DC Current Gain

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

2.0 2.0
IC = 4 A IC = 4 A
1.6 1.6 IC = 16 A
1.2 1.2
IC = 8 A
IC = 8 A
IC = 16 A
0.8 0.8
0.4 0.4
TC = 25°C TC = 25°C
0 0
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0
IB, BASE CURRENT (AMPS) IB, BASE CURRENT (AMPS)
Figure 3. Collector Saturation Region Figure 4. Collector Saturation Region
2.0 2.0
IC/IB = 10 IC/IB = 10
1.6 1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.2 1.2 VBE(sat)

VBE(sat)
0.8 25°C 0.8 25°C
150°C 150°C
150°C
0.4 150°C 0.4 25°C
VCE(sat) 25°C
VCE(sat)
0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 5. “On” Voltage Figure 6. “On” Voltage
http://onsemi.com
3
2N3773
TYPICAL CHARACTERISTICS
1000 10,000
f = 1 MHz f = 1 MHz
COB, OUTPUT CAPACITANCE (pF)
CIB, INPUT CAPACITANCE (pF)

TA = 25°C TA = 25°C
100 1000
10 100
0 50 100 150 200 0 1 2 3 4 5 6 7 8
VCB, COLLECTOR−BASE VOLTAGE (V) VEB, EMITTER−BASE VOLTAGE (V)
Figure 7. Output Capacitance Figure 8. Input Capacitance
30
20 10 ms
40 ms
IC, COLLECTOR CURRENT (AMP)
10
100 ms
5.0 dc 200 ms
3.0 1.0 ms
2.0
100 ms
1.0
0.5
500 ms
0.3 BONDING WIRE LIMIT
0.2 THERMAL LIMIT
@ TC = 25°C, SINGLE PULSE
0.1
SECOND BREAKDOWN LIMIT
0.05
0.03
3.0 5.0 7.0 10 20 30 50 70 100 200 300
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of The data of Figure 9 is based on TJ(pk) = 200_C; TC is
a transistor: average junction temperature and second variable depending on conditions. Second breakdown pulse
breakdown. Safe operating area curves indicate IC − VCE limits are valid for duty cycles to 10% provided TJ(pk)
limits of the transistor that must be observed for reliable < 200_C. At high case temperatures, thermal limitations
operation: i.e., the transistor must not be subjected to greater will reduce the power that can be handled to values less than
dissipation than the curves indicate. the limitations imposed by second breakdown.
http://onsemi.com
4
2N3773
100
POWER DERATING FACTOR (%)

80
60
THERMAL
40 DERATING
20
0
0 40 80 120 160 200
TC, CASE TEMPERATURE (°C)
Figure 10. Power Derating
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ANSI
N Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C 3. ALL RULES AND NOTES ASSOCIATED WITH
−T− SEATING
PLANE
REFERENCED TO-204AA OUTLINE SHALL APPLY.
E INCHES MILLIMETERS
D 2 PL K DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
0.13 (0.005) M T Q M Y M B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
U
L −Y− D 0.038 0.043 0.97 1.09
V E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
2 H 0.215 BSC 5.46 BSC
G B K 0.440 0.480 11.18 12.19
H 1 L 0.665 BSC 16.89 BSC
N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
−Q− U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
0.13 (0.005) M T Y M
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
PowerBase is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative
http://onsemi.com 2N3773/D
5

16 A NPN Power Transistors 140 V, 150 W

Încărcat de

Informații document

Titlu original

Drepturi de autor

Formate disponibile

Partajați acest document

Partajați sau inserați document

Opțiuni de partajare

Vi se pare util acest document?

Este necorespunzător acest conținut?

Drepturi de autor:

Formate disponibile

16 A NPN Power Transistors 140 V, 150 W

Încărcat de

Drepturi de autor:

Formate disponibile

2N3773

NPN Power Transistors

• High Safe Operating Area (100% Tested) 150 W @ 100 V

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

hFE , DC CURRENT GAIN

Figure 1. DC Current Gain Figure 2. DC Current Gain

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 3. Collector Saturation Region Figure 4. Collector Saturation Region

1.2 1.2 VBE(sat)

Figure 5. “On” Voltage Figure 6. “On” Voltage

CIB, INPUT CAPACITANCE (pF)

Figure 9. Forward Bias Safe Operating Area

POWER DERATING FACTOR (%)

Figure 10. Power Derating

PowerBase is a trademark of Semiconductor Components Industries, LLC (SCILLC).

PUBLICATION ORDERING INFORMATION

S-ar putea să vă placă și