FQA9N90C_F109 — N-Channel QFET® MOSFET

April 2014

FQA9N90C_F109
N-Channel QFET® MOSFET
900 V, 9 A, 1.4 Ω
Features Description
• 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
• Low Gate Charge (Typ. 45 nC)
stripe and DMOS technology. This advanced MOSFET
• Low Crss . 14 pF) technology has been especially tailored to reduce on-state
• 100% Avalanche Tested resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
• RoHS compliant switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.

G
G
D TO-3PN
S
S

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Symbol Parameter FQA9N90C_F109 Unit

VDSS Drain-Source Voltage 900 V
ID Drain Current - Continuous (TC = 25°C) 9.0 A
- Continuous (TC = 100°C) 5.7 A
IDM Drain Current - Pulsed (Note 1) 36 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 900 mJ
IAR Avalanche Current (Note 1) 9.0 A
EAR Repetitive Avalanche Energy (Note 1) 28 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns
PD Power Dissipation (TC = 25°C) 280 W
- Derate above 25°C 2.22 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds

Thermal Characteristics
Symbol Parameter FQA9N90C_F109 Unit
RθJC Thermal Resistance, Junction-to-Case, Max. 0.45 °C/W
RθCS Thermal Resistance, Case-to-Sink, Typ. 0.24 °C/W
RθJA Thermal Resistance, Junction-to-Ambient, Max. 40 °C/W

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQA9N90C_F109 Rev C2
 FQA9N90C_F109 — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FQA9N90C_F109 FQA9N90C TO-3PN Tube N/A N/A 30 units

Electrical Characteristics TC = 25°C unless otherwise noted.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 900 -- -- V
∆BVDSS/
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.99 -- V/°C
∆TJ
IDSS Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- -- 10 µA
VDS = 720 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V
RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.5 A -- 1.12 1.4 Ω
gFS Forward Transconductance VDS = 50 V, ID = 4.5 A -- 9.2 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 2100 2730 pF
Coss Output Capacitance f = 1.0 MHz -- 175 230 pF
Crss Reverse Transfer Capacitance -- 14 18 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 450 V, ID = 11.0A, -- 50 110 ns
RG = 25 Ω
tr Turn-On Rise Time -- 120 250 ns

td(off) Turn-Off Delay Time -- 100 210 ns

(Note 4)
tf Turn-Off Fall Time -- 75 160 ns

Qg Total Gate Charge VDS = 720 V, ID = 11.0A, -- 45 58 nC

VGS = 10 V
Qgs Gate-Source Charge -- 13 -- nC
(Note 4)
Qgd Gate-Drain Charge -- 18 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9.0 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS =9.0 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 9.0 A, -- 550 -- ns
dIF / dt = 100 A/µs
Qrr Reverse Recovery Charge -- 6.5 -- µC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 21 mH, IAS = 9 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 9 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.

©2007 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FQA9N90C_F109 Rev C2
 FQA9N90C_F109 — N-Channel QFET® MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

VGS
Top : 15.0 V
10.0 V
8.0 V
1 7.0 V
10 6.5 V 1
10
6.0 V
Bottom : 5.5 V o
ID, Drain Current [A]

ID, Drain Current [A]

150 C

o
o
25 C -55 C
0
10
0
10

※ Notes :
1. 250µs Pulse Test ※ Notes :
-1 2. TC = 25℃ 1. VDS = 50V
10
2. 250µs Pulse Test
-1
10
10
-1
10
0
10
1 2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue

3.0
Drain-Source On-Resistance

IDR, Reverse Drain Current [A]

1
2.5 10

VGS = 10V
RDS(ON) [Ω ],

2.0 VGS = 20V

0
10

1.5 150℃ 25℃

※ Notes :
1. VGS = 0V
※ Note : TJ = 25℃ 2. 250µs Pulse Test

1.0 10
-1

0 5 10 15 20 25 30 0.2 0.4 0.6 0.8 1.0 1.2 1.4

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

3500 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd VDS = 180V
Crss = Cgd
3000
10 VDS = 450V
VGS, Gate-Source Voltage [V]

Ciss VDS = 720V

2500
8
Capacitance [pF]

2000

Coss 6
1500
※ Notes :
1. VGS = 0 V 4
1000 2. f = 1 MHz

Crss 2
500
※ Note : ID = 9A

0 0
10
-1
10
0
10
1 0 10 20 30 40 50

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

©2007 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FQA9N90C_F109 Rev C2
 FQA9N90C_F109 — N-Channel QFET® MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V ※ Notes :
2. ID = 250 µA 0.5 1. VGS = 10 V
2. ID = 4.5 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

10
2 Operation in This Area
10 is Limited by R DS(on)
10 µs
8
100 µs
ID, Drain Current [A]
ID, Drain Current [A]

1
10
1 ms
10 ms 6
DC
0
10
4

10
-1 ※ Notes :
o
1. TC = 25 C 2
o
2. TJ = 150 C
3. Single Pulse

-2
10 0
10
0
10
1
10
2
10
3 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 11. Transient Thermal Response Curve

0
10
ZθJ C(t), Thermal Response [oC/W]

D = 0 .5

※ N o te s :
10
-1 0 .2 1 . Z θ J C (t) = 0 .4 5 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .1
PDM
0 .0 5
t1
0 .0 2 t2
-2
0 .0 1 s in g le
e pu se
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

©2007 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FQA9N90C_F109 Rev C2
 FQA9N90C_F109 — N-Channel QFET® MOSFET
VGS
Same
Same Type
50KΩ
50K Ω
as DU
DUTT Qg
12V 200nF
200n F
300nF
300n F 10V
VDS
VGS Qgs Qgd

DUT
DU T
IG = const.

Charrge
Cha

Figure 12. Gate Charge Test Circuit & Waveform

RL VDS
VDS 90%

VGS VDD
RG

10%
10%
VGS
VGS DUT
DU T
td(on tr td(o
d( on)) d( of f) tf
t on t of
offf

Figure 13. Resistive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSDSSS - VDD

BVDS
DSS
S
ID
IAS
RG
VDD ID (t)

VGS DUT VDD VDS (t)

tp
tp Ti
Tim
me

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

©2007 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FQA9N90C_F109 Rev C2
 FQA9N90C_F109 — N-Channel QFET® MOSFET
DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

©2007 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FQA9N90C_F109 Rev C2
 FQA9N90C_F109 — N-Channel QFET® MOSFET
Mechanical Dimensions

Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65

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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003

©2007 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FQA9N90C_F109 Rev C2
 FQA9N90C_F109 — N-Channel QFET® MOSFET
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Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
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Semiconductor. The datasheet is for reference information only.
Rev. I68

©2007 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FQA9N90C_F109 Rev C2
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