AOD472

N-Channel Enhancement Mode Field Effect Transistor

1.4
General Description Features

The AOD472 uses advanced trench technology and VDS (V) = 25V
design to provide excellent RDS(ON) with low gate ID = 55A (VGS = 10V)
charge. This device is suitable for use in PWM, load RDS(ON) <6 mΩ (VGS = 10V)
switching and general purpose applications. RDS(ON) <9.5 mΩ (VGS = 4.5V)

193
18
100% UIS Tested
100% Rg Tested

TO-252
D-PAK Bottom View
Top View D
D

G
S G
S
G S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 25 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 55
Current G TC=100°C ID 43
Pulsed Drain Current C IDM 200 A
C
Pulsed Forward Diode Current ISM 200
C
Avalanche Current IAR 50
Repetitive avalanche energy L=0.1mH C EAR 125 mJ
TC=25°C 60
B PD W
Power Dissipation TC=100°C 30
TA=25°C 2.5
A PDSM W
Power Dissipation TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 15 20 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 41 50 °C/W
B
Maximum Junction-to-Case Steady-State RθJC 2.1 2.5 °C/W

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AOD472

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250uA, VGS=0V 25 V
VDS=20V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.2 1.4 2.5 V
ID(ON) On state drain current VGS=10V, VDS=5V 150 A
VGS=10V, ID=30A 5 6
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 7.5 mΩ
VGS=4.5V, ID=20A 7.6 9.5
gFS Forward Transconductance VDS=5V, ID=20A 49 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.74 1 V
IS Maximum Body-Diode Continuous Current 50 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2050 2460 pF
Coss Output Capacitance VGS=0V, VDS=12.5V, f=1MHz 485 600 pF
Crss Reverse Transfer Capacitance 280 400 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.86 1.5 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 41 50 nC
Qg(4.5V) Total Gate Charge 20 25 nC
Qgs Gate Source Charge VGS=10V, VDS=12.5V, ID=20A 7.3 8.8 nC
QgsVth Gate Source Charge at Vth 3.4 4 nC
Qgd Gate Drain Charge 8.2 11.5 nC
tD(on) Turn-On DelayTime 7.5 10 ns
tr Turn-On Rise Time VGS=10V, VDS=12.5V, 11 22 ns
tD(off) Turn-Off DelayTime RL=0.68Ω, RGEN=3Ω 27 35 ns
tf Turn-Off Fall Time 8 16 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 30 36 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 19 23 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1 ST 2008).
Rev9: Feb 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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AOD472

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

200 60
10V
50 VDS=5V
160 6V
4.5V 40
120
ID (A)

ID(A)
30
125°C 1.4
25°C
80 3.5V
20
3.0V 494 593
40
VGS=2.5 10 692 830
0 0
0 1 2 3 4 5 1 2 3 4 5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics
193
10 1.8
18
Normalized On-Resistance
1.6
8
VGS=10V, 30A
VGS=4.5V
RDS(ON) (mΩ)

1.4

6
1.2

1 VGS=4.5V, 20A
4 VGS=10V

0.8
2
0 10 20 30 40 50 60 0.6
-50 -25 0 25 50 59 100 125 150 175
75
ID (A)
142
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage Figure 4: On-Resistance vs. Junction Temperature

12 1.0E+02

ID=20A 1.0E+01
125°C
10
1.0E+00
RDS(ON) (mΩ)

IS (A)

1.0E-01
8
1.0E-02 25°C
125°C
1.0E-03
6
25°C 1.0E-04

4 1.0E-05
3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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AOD472

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 3000

2500
8 VDS=12.5V Ciss
ID=20A

Capacitance (pF)
2000
VGS (Volts)

6
1500
1.4
4
1000 Coss
494 593
2
500 692 830

0 Crss
0
0 5 10 15 20 25 30 35 40 0 5 10 15 20 25
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
193
18
1000 1000
TJ(Max)=175°C, TC=25°C

10µs 800 TJ(Max)=175°C

100 RDS(ON) TC=25°C
limited 100µs
Power (W)

600
ID (Amps)

10 DC
1ms
400

1
200

0.1 0 59
0.1 1 10 100 0.0001 0.001 0.01 1420.1 1 10
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating
Safe Operating Area (Note F) Junction-to-Case (Note F)

10
D=Ton/T In descending order
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=2.5°C/W
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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AOD472

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 60
L ⋅ ID
ID(A), Peak Avalanche Current

90 tA = 50
BV − V DD

Power Dissipation (W)

80
70 40
60
TA=25°C 30
50 1.4
TA=150°C
40 20
30 494 593
20
10 692 830
10 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175
Time in avalanche, tA (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note B)
193
18
60 50

50 TA=25°C
40
Current rating ID(A)

40
Power (W)

30
30
20
20

10
10

0 0 59
0 25 50 75 100 125 150 175 0.01 0.1 1 142 10 100 1000
TCASE (°C) Pulse Width (s)
Figure 14: Current De-rating (Note B) Figure 15: Single Pulse Power Rating Junction-
to-Ambient (Note H)

10
D=Ton/T In descending order
ZθJA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=50°C/W

0.1

PD
0.01

Single Pulse Ton

T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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AOD472

G a te C h a rg e T e s t C ircu it & W a v e fo rm
Vgs
Qg
10 V
+
VDC
+ Q gs Qgd
- VD C
Vds

DUT -
Vgs

Ig

C h a rg e

Resistive Switching Test Circuit & Waveforms

RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr t d(off) tf

ton toff

U nc lam p ed In du ctive S w itch ing (U IS ) T e st C ircu it & W a ve fo rm s

L 2
Vds E A R = 1/2 L IA R B VD S S

Id V ds

V gs + V dd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

D io d e R e co ve ry T e st C ircu it & W a ve fo rm s

V ds + Q rr = - Id t
DUT
V gs

t rr
Vds - L Is d IF
Isd dI/dt
+ V dd I RM
Vgs VDC
V dd
Ig
- Vds

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