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IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—II: EXPRESS BRIEFS, VOL. 65, NO.

4, APRIL 2018 441

Enhanced Single-Stage Folded Cascode OTA


Suitable for Large Capacitive Loads
Antonio J. Lopez-Martin, Senior Member, IEEE, M. Pilar Garde, Jose M. Algueta, Carlos A. de la Cruz Blas,
Ramon G. Carvajal, Senior Member, IEEE, and Jaime Ramirez-Angulo, Fellow, IEEE

Abstract—An enhanced single-stage folded cascode operational folding stage limit the maximum output current. As these cur-
transconductance amplifier able to drive large capacitive loads is rent sources force the sum of currents through M1 and M9C
presented. Circuits that adaptively bias the input differential pair to be 2IBIAS , and the same with the sum of currents through
and the current folding stage are employed, which provide class M2 and M10C , the maximum output current is 2IBIAS regard-
AB operation with dynamic current boosting and increased gain- less of the adaptive biasing circuit used for the input pair.
bandwidth (GBW) product. Measurement results of a test chip
prototype fabricated in a 0.5-µm CMOS process show an increase
Therefore, it is mandatory that these bias current sources also
in slew rate and GBW by a factor of 30 and 15, respectively, adapt to the input signal to achieve power efficiency. Thus,
versus the class A version using the same supply voltage and bias the conventional approach to enhance the performance of
currents. Overhead in other performance metrics is small. the folded-cascode amplifier is using multi-path schemes [4]
or current recycling techniques [5]–[8], where these current
Index Terms—Amplifiers, analog integrated circuits, CMOS
integrated circuits, class AB circuits.
sources are replaced by active current mirrors. However, these
techniques have limited power efficiency since the active cur-
rent mirrors employed lead to internal replication of large
dynamic currents at the additional branches [3]. A simple
I. I NTRODUCTION modification of the conventional folded cascode OTA is pro-
posed here which enhances the performance of the amplifier
LASS AB amplifiers are widely employed in applications
C requiring low power consumption since they can yield
large dynamic currents not limited by the quiescent currents.
without this shortcoming.

Hence low static power consumption can be achieved with- II. P RINCIPLE OF O PERATION
out degrading dynamic performance. These amplifiers usually Figure 1(a) shows the conventional (class A) folded cascode
employ an adaptive bias circuit for the differential pair to get OTA and Fig. 1(b) the proposed class AB OTA. The con-
the required current boosting. Such adaptive circuits can pro- stant differential pair bias current source 2IBIAS of Fig. 1(a) is
vide very low quiescent currents in order to have very low replaced in Fig. 1(b) by an adaptive circuit to bias M1 and
static power dissipation. However, when a large differential M2 . In addition, the current sources 2IBIAS at the folding stage
input signal is applied, these adaptive bias circuits are able to of Fig. 1(a) are replaced by another adaptive biasing circuit
provide large dynamic currents, with maximum swings larger in Fig. 1(b), in order to avoid the limitation in output current
than the quiescent current level. described in the previous section. The adaptive bias techniques
Several proposals have been reported to provide class AB employed are described below.
operation to classic amplifier topologies like telescopic and
current mirror OTAs, e.g., [1]–[3]. However, achieving class A. Adaptive Biasing of the Input Pair
AB operation in a folded cascode amplifier (Fig. 1(a)) is more The adaptive biasing scheme chosen for the differential
complex. Adaptive biasing of the input pair is not effective input pair is shown in Fig. 2(a) [3], [9]. It consists of two
by itself in this case since the bottom current sources at the matched transistors M1 and M2 cross-coupled by two DC
Q Q
Manuscript received December 23, 2016; revised March 21, 2017; accepted
level shifters. In quiescent conditions VSG1 = VSG2 = VB , so
April 1, 2017. Date of publication May 2, 2017; date of current ver- that transistors M1 and M2 have identical quiescent currents
sion March 26, 2018. This work was supported in part by the Spanish well controlled by the DC voltage VB . If VB is slightly larger
Ministerio de Economía y Competitividad under Grant TEC2013-47286-C3-2, than the MOS threshold voltage |VTH |, very low static cur-
and in part by the Gobierno de Navarra under Grant PI016 ALM. This rents are generated. However, if for instance VIN+ decreases,
brief was recommended by Associate Editor F. Lau. (Corresponding author:
Antonio J. Lopez-Martin.) the source voltage of M1 drops by the same amount while
A. J. Lopez-Martin, M. P. Garde, J. M. Algueta, and C. A. de la Cruz Blas the source voltage of M2 remains constant. Hence, current
are with the Institute of Smart Cities, Public University of Navarre, in M2 increases and current in M1 decreases. These currents
31006 Pamplona, Spain (e-mail: antonio.lopez@unavarra.es). are not bounded by the quiescent current levels. Moreover,
R. G. Carvajal is with the Departamento de Ingeniería Electrónica,
Escuela Superior de Ingenieros, Universidad de Sevilla, 41092 Sevilla, Spain the full differential input signal is applied to each differential
(e-mail: carvajal@gte.esi.us.es). pair transistor whereas only half is appied in the conven-
J. Ramirez-Angulo is with the Klipsch School of Electrical Engineering, tional differential pair, thus doubling DC gain compared to
New Mexico State University, Las Cruces, NM 88003 USA (e-mail: Fig. 1(a). In order to implement the DC level shifters VB in the
jairamir@nmsu.edu).
Color versions of one or more of the figures in this paper are available
scheme of Fig. 2(a), the Flipped Voltage Follower (FVF) [10]
online at http://ieeexplore.ieee.org. is employed, as shown in Fig. 2(b). Each FVF is made of two
Digital Object Identifier 10.1109/TCSII.2017.2700060 transistors (M3 , M5 or M4 , M6 ) and a current source IBIAS .
1549-7747 c 2017 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.
442 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—II: EXPRESS BRIEFS, VOL. 65, NO. 4, APRIL 2018

VB VB M5 M6

2IBIAS M3 M4

VIN-
IBIAS IBIAS
VIN+
VIN+ VIN- M1 M2
M1 M2 VIN-
M1 M2
I1 I2 I1 I2 VIN+

(a) (b)

M7 Fig. 2. Adaptive biasing of the differential input pair (a) Scheme (b) FVF
M8 implementation.
VCP
M7 C M8C VIN VIN
M1 M1
A
A
VOUT
VCN + IOUT
IOUT
M9C CBAT
M10C 2IBIAS
B
B
2IBIAS 2IBIAS M9 M11 M9
MRLARGE

(a) (a) (b)

Adaptive Biasing Fig. 3. Adaptive biasing of the folding stage: (a) Scheme and (b) QFG
Input Pair implementation.

VIN+ M1 M2 VIN- using Quasi-Floating Gate (QFG) transistors [11]–[13]. The


idea is illustrated with the simple class AB output stage
of Fig. 3(a). For the implementation of the DC level shift
M7 M8 several proposals have been reported, such as using diode-
connected transistors or resistors biased by DC currents.
VCP
However, these solutions require extra quiescent power and
M7C M8C may increase supply voltage requirements and reduce band-
width. Besides, the resulting quiescent currents are often not
VOUT accurately set and experience large process, voltage and tem-
VCN perature (PVT) variations. Figure 3(b) shows an efficient
M9C implementation of this DC level shift using a QFG transistor
M10C avoiding these drawbacks [12]. The quiescent current in M9 is
accurately set to 2IBIAS , regardless of PVT variations. Under
dynamic conditions, voltage at node A is transferred to node B
Adaptive Biasing after attenuation by a factor CBAT /(CBAT +CB ) and first-order
Folding Stage RC high-pass filtering with f −3dB =1/[2π Rlarge (CBAT +CB )],
with Rlarge the large leakage resistance of the pseudo-resistor
(b) MRlarge and CB the parasitic capacitance at node B. Since the
Fig. 1. (a) Class A folded cascode OTA. (b) Class AB folded cascode OTA.
value of Rlarge is extremely large f −3dB < 1 Hz so in practice
only the DC component of voltage at node A is not transferred
to node B.
These FVFs feature low supply voltage requirements, simplic-
ity, low output resistance, ability to source large currents and III. C IRCUIT I MPLEMENTATION
provide accurate quiescent current control. Quiescent current The class AB folded cascode OTA of Fig. 1(b) using the
in M1 and M2 is the bias current IBIAS of the FVFs assuming adaptive biasing schemes described is shown in Fig. 4. Note
matched transistors M1 , M2 , M3 and M4 . that the QFG transistors M9 and M10 are not directly con-
nected to the input signals. They re-use the FVFs to invert
B. Adaptive Biasing of the Folding Stage and scale the input signals to fit the signal swing at the gates
As mentioned before, the adaptive biasing of Fig. 2 would of M9 -M10 and to avoid extra loading of the input terminals
double DC gain (and GBW) but could not increase dynamic by the adaptive biasing of the folding stage.
output currents, since currents in the output branches are lim- In quiescent operation the circuit works like Fig. 1(a),
ited by the current sources of the folding stage. To solve this with well controlled quiescent currents, since no current flows
issue these current sources are also adaptively biased here, by through the pseudo resistors MR1 and MR2 . For large positive
LOPEZ-MARTIN et al.: ENHANCED SINGLE-STAGE FOLDED CASCODE OTA SUITABLE FOR LARGE CAPACITIVE LOADS 443

A while that of the OTA of Fig. 4 is


M5 M6
 
gm9
GmAB = 2gm1 1 + α (2)
M3 M4 gm6
with gmi the transconductance gain of transistor Mi and
IBIAS IBIAS
α ≈ CBAT /(CBAT +Cgs9 ). Hence an increase of 2(1+αgm9 /gm6 )
VIN- VIN+ is achieved, where the factor 2 is due to the adaptive biasing
M1 M2 circuit of the differential pair and the term 1+αgm9 /gm6 cor-
responds to the adaptive current sources M9 and M10 . This
enhanced transconductance leads to the same increase in the
M7 M8 GBW of the class AB OTA of Fig. 4 versus the conventional
OTA of Fig. 1(a). The DC gain of the class AB OTA is also
CBAT VCP CBAT increased, but to a less extent since the output resistance Rout
M7C M8C of the class AB OTA is also slightly decreased due to the
nonzero output resistance of the FVFs.
VOUT Just like the conventional folded cascode OTA, the OTA of
VCN Fig. 4 features a dominant pole ωp1 = -1/(Rout Cout ) set by
M9 C the output terminal as well as a non-dominant pole ωp3 ≈
M10C
−gm9c /Cp9 corresponding to the source terminals of M9c and
M10c . In these expressions Cout ≈ CL is the output capaci-
M9 M10 tance and Cp9 is the parasitic capacitance at the source of M9C ,
IBIAS which corresponds to Cgs9c plus other smaller capacitances. In
B addition, the circuit of Fig. 4 has an additional non-dominant
VCN pole ωp2 ≈ -gm5 /(CA +αCB ) due to the extra signal path intro-
M11C
MR1 MR2 duced, where CA and CB are the parasitic capacitances at nodes
A and B, respectively. CA is approximately Cgs5 plus the bot-
M11
tom plate to substrate parasitic capacitance of CBAT , and CB
is approximately Cgs10 plus the top plate to substrate para-
sitic capacitance of CBAT . This is shown in Fig. 5, where it
Fig. 4. Proposed class AB folded cascode OTA. is assumed that non-dominant poles are beyond the unity-gain
frequency ωu . Since ωp2 is associated to PMOS devices, and
Im CA +αCB is generally larger than Cp9 , ωp2 is at lower frequen-
cies than ωp3 . Hence ωp2 yields a reduction in phase margin
s-plane compared to the class A version. For this additional pole fre-
quency to be at least 3 times the GBW, the required CL is
approximately
Re
 
gm1 gm9
ωp3 ωp2 ωu ωp1 CL > 6 1+α · (CA + αCB ). (3)
gm5 gm6
Hence, the circuit is amenable to drive relatively large load
capacitances. For single-ended output, like in Fig. 4, there is an
extra high-frequency pole and zero due to the PMOS current
Fig. 5. Simplified pole-zero diagram (not to scale).
mirror M7 -M8 and another high-frequency pole at the source
of M8c (not shown in Fig. 5).
VID =VIN+ -VIN− , the gate voltage of M5 decreases and that of
M6 increases. As described in Section II, capacitors CBAT act
as floating batteries that decrease the gate voltage of M10 and B. Slew Rate
increase that of M9 . Hence a large output current is sourced The slew rate of the folded cascode OTA of Fig. 1(a) is
to the load, yielding large positive Slew Rate SR+ . Similarly,
for negative VID the gate voltage of M5 increases and that 2IB
SRA+ = SRA− = (4)
of M6 decreases. As a consequence, the gate voltage of M10 CL
increases and that of M9 decreases, leading to a large output
current sunk from the load that boosts SR− . since the maximum current sourced to the load of sunk from
it is 2IB . Hence symmetrical positive and negative slew is pro-
vided but the maximum output current is limited by the bias
A. Small-Signal Analysis current. The slew rate in the circuit of Fig. 4 is approximately
The adaptive biasing employed in Fig. 4 not only increases  2

slew rate, it also significantly increases the transconductance 2IB β9
Gm of the conventional OTA for the same bias currrent and SRAB+ = SRAB− = 1+α (5)
transistor sizes. The transconductance of the conventional CL β6
folded cascode OTA is
with βi = μCox (W/L)i , evidencing the SR improvement
GmA = gm1 = gm2 (1) achieved.
444 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—II: EXPRESS BRIEFS, VOL. 65, NO. 4, APRIL 2018

TABLE I
T RANSISTOR A SPECT R ATIOS

Class AB OTA Class A OTA


Fig. 7. Measured response of the class A and class AB folded cascode OTAs.

Fig. 6. Test chip microphotograph.

IV. M EASUREMENT R ESULTS


Both the class A and class AB folded cascode OTA circuits
of Fig. 1(a) and Fig. 4 were fabricated in a 0.5 µm CMOS test
chip prototype. Figure 6 shows a microphotograph where the
OTAs are enclosed by white rectangles. The transistor sizes
employed are shown in Table I. Poly-poly capacitors CBAT
were used, with a value of 0.7 pF. Supply voltages were ±1 V,
and the bias current IBIAS was 10 µA. Cascode bias voltages
VCP and VCN were set to -0.2 V and 0 V, respectively. An
external load capacitor of 47 pF was used. Since the output
was connected directly to a bonding pad and no external buffer
was employed, the total load capacitance is increased by the Fig. 8. Measured closed-loop magnitude response of the class A OTA of
pad, board and test probe capacitance. Its estimated value is Fig. 1(a) (dashed line) and the class AB OTA of Fig. 4 (solid line).
of approximately 70 pF.
The transient response the OTAs was measured with the fab-
ricated OTAs in unity gain configuration, and using a 1 MHz Distortion (THD) is < 1 % for a 1 Vpp input sinusoid, whereas
0.5 V square wave with DC level of -0.6V at the input. the conventional OTA shows a THD > 6% due to slew rate
Fig. 7 shows the measured output of both OTAs. Note the limitations. The open-loop frequency response could not be
stable and faster settling of the proposed class AB OTA of measured directly due to the high gain. Simulation results for
Fig. 4. However, a small ringing at the edges can be noticed DC gain and phase margin are provided instead. Note that the
for lower input amplitudes, as expected from the phase mar- increase in DC gain of the proposed OTA is 14.6 dB (i.e.,
gin value. The SR+ for the class A OTA is 0.32 V/µs and a factor of 5.37), lower than the GBW increase factor due to
for the proposed class AB OTA is 9.8 V/µs, i.e., an increase the reduced output resistance. These results are in agreement
factor of 30.6 is achieved for the same quiescent current and with the theoretical analysis in Section III-A. The main draw-
load capacitance. The expected increase factor from (5), with back is the decrease in phase margin. The phase margin of the
estimated α ≈ 0.8, was 36. OTA of Fig. 1(a) drops to 79◦ at 4.75 MHz, so the OTA of
The measured magnitude response of the OTAs as volt- Fig. 4 shows a degradation of 19◦ .
age followers is shown in Fig. 8. The cutoff frequency of the Concerning the equivalent input noise level, it is slightly
OTA of Fig. 4 is 4.75 MHz, and that of the OTA of Fig. 1(a) is lower in the proposed OTA due to the increased gain. However,
310 kHz. Due to the dominant pole design, these frequencies static power increases a 50% by the bias current required for
correspond approximately to the GBW of the OTAs. So an the FVFs, and silicon area is a 20% higher due to the capaci-
increase factor of 15.3 in GBW is observed experimentally. tors CBAT . If the width of M3 and M4 is made n times smaller
The expected value from (2) using α ≈ 0.8 was 12.2. than that of M1 and M2 , the bias current of the FVF is also
A summary of the main measurement results for both OTAs scaled by n, and the extra power would be just 50/n %.
is shown in Table II. Note that the settling time in the proposed Table II also includes a performance comparison
OTA is <100 ns, while the conventional OTA is unable to with other proposed class AB amplifiers. To ease com-
settle for this input signal and load. Measured Total Harmonic parison, two conventional Figures of Merit (FoM)
LOPEZ-MARTIN et al.: ENHANCED SINGLE-STAGE FOLDED CASCODE OTA SUITABLE FOR LARGE CAPACITIVE LOADS 445

TABLE II
S UMMARY OF M EASUREMENT R ESULTS AND P ERFORMANCE C OMPARISON

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