NTD3055L104

Power MOSFET
12 Amps, 60 Volts, Logic Level
N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits. http://onsemi.com

Features
V(BR)DSS RDS(on) TYP ID MAX
• Pb−Free Packages are Available
60 V 104 mW 12 A
• Lower RDS(on)
• Lower VDS(on)
N−Channel
• Tighter VSD Specification
D
• Lower Diode Reverse Recovery Time
• Lower Reverse Recovery Stored Charge
Typical Applications
• Power Supplies G
• Converters
• Power Motor Controls S
• Bridge Circuits
MARKING
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) DIAGRAMS
Rating Symbol Value Unit
4
Drain−to−Source Voltage VDSS 60 Vdc Drain
Drain−to−Gate Voltage (RGS = 10 MW) VDGR 60 Vdc
4
DPAK

55L104
Gate−to−Source Voltage, Continuous VGS "15 Vdc

AYW
− Non−Repetitive (tpv10 ms) VGS "20 CASE 369C
1 2 STYLE 2
Drain Current 3
− Continuous @ TA = 25°C ID 12 Adc
− Continuous @ TA = 100°C ID 10 2
1 3
− Single Pulse (tpv10 ms) IDM 45 Apk Drain
Gate Source
Total Power Dissipation @ TA = 25°C PD 48 W 4
Derate above 25°C 0.32 W/°C Drain
Total Power Dissipation @ TA = 25°C (Note 1) 2.1 W
4
Total Power Dissipation @ TA = 25°C (Note 2) 1.5 W DPAK−3
55L104
AYW

Operating and Storage Temperature Range TJ, Tstg −55 to °C CASE 369D
+175 STYLE 2
Single Pulse Drain−to−Source Avalanche EAS 61 mJ
1
Energy − Starting TJ = 25°C 2
(VDD = 25 Vdc, VGS = 5.0 Vdc, L = 1.0 mH 3
IL(pk) = 11 A, VDS = 60 Vdc) 1 2 3
Thermal Resistance, − Junction−to−Case RqJC 3.13 °C/W Gate Drain Source
− Junction−to−Ambient (Note 1) RqJA 71.4
− Junction−to−Ambient (Note 2) RqJA 100 55L104 = Device Code
Maximum Lead Temperature for Soldering TL 260 °C A = Assembly Location
Purposes, 1/8″ from case for 10 seconds Y = Year
W = Work Week
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur ORDERING INFORMATION
and reliability may be affected. See detailed ordering and shipping information in the package
1. When surface mounted to an FR4 board using 1″ pad size, dimensions section on page 2 of this data sheet.
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in2).

 Semiconductor Components Industries, LLC, 2005 1 Publication Order Number:

January, 2005 − Rev. 5 NTD3055L104/D
 NTD3055L104

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3) V(BR)DSS Vdc
(VGS = 0 Vdc, ID = 250 mAdc) 60 70 −
Temperature Coefficient (Positive) − 62.9 − mV/°C
Zero Gate Voltage Drain Current IDSS mAdc
(VDS = 60 Vdc, VGS = 0 Vdc) − − 1.0
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) − − 10
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3) VGS(th) Vdc
(VDS = VGS, ID = 250 mAdc) 1.0 1.6 2.0
Threshold Temperature Coefficient (Negative) − 4.2 − mV/°C
Static Drain−to−Source On−Resistance (Note 3) RDS(on) mW
(VGS = 5.0 Vdc, ID = 6.0 Adc) − 89 104
Static Drain−to−Source On−Voltage (Note 3) VDS(on) Vdc
(VGS = 5.0 Vdc, ID = 12 Adc) − 0.98 1.50
(VGS = 5.0 Vdc, ID = 6.0 Adc, TJ = 150°C) − 0.86 −
Forward Transconductance (Note 3) (VDS = 8.0 Vdc, ID = 6.0 Adc) gFS − 9.1 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss − 316 440 pF
(VDS = 25 Vdc
Vdc, VGS = 0 Vdc,
Vdc
Output Capacitance Coss − 105 150
f = 1.0 MHz)
Transfer Capacitance Crss − 35 70

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time td(on) − 9.2 20 ns
Rise Time (VDD = 30 Vdc, ID = 12 Adc, tr − 104 210
Turn−Off Delay Time VGS = 5.0 Vdc, RG = 9.1 W) (Note 3) td(off) − 19 40
Fall Time tf − 40.5 80
Gate Charge
g QT − 7.4 20 nC
(VDS = 48 Vdc
Vdc, ID = 12 Adc
Adc,
Q1 − 2.0 −
VGS = 5.0
5 0 Vdc) (Note 3)
Q2 − 4.0 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (IS = 12 Adc, VGS = 0 Vdc) (Note 3) VSD − 0.95 1.2 Vdc
(IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C) − 0.82 −
Reverse Recoveryy Time trr − 35 − ns
(IS = 12 Adc
Adc, VGS = 0 Vdc,
Vdc
ta − 21 −
dIS/dt = 100 A/ms) (Note 3)
tb − 14 −
Reverse Recovery Stored Charge QRR − 0.04 − mC
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.

ORDERING INFORMATION
Device Package Shipping †
NTD3055L104 DPAK 75 Units/Rail
NTD3055L104G DPAK 75 Units/Rail
(Pb−Free)
NTD3055L104−1 DPAK−3 75 Units/Rail
NTD3055L104−1G DPAK−3 75 Units/Rail
(Pb−Free)
NTD3055L104T4 DPAK 2500 Tape & Reel
NTD3055L104T4G DPAK 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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 NTD3055L104

24 24
VGS = 10 V 5V
VDS ≥ 10 V
ID, DRAIN CURRENT (AMPS)

ID, DRAIN CURRENT (AMPS)

20 20
8V 4.5 V
16 16
6V
4V
12 12

8 3.5 V 8
TJ = 25°C

4 3V 4
TJ = 100°C
TJ = −55°C
0 0
0 1 2 3 4 5 6 7 8 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.32 0.32
VGS = 5 V VGS = 10 V
0.28 0.28

0.24 0.24
TJ = 100°C
0.20 0.20
TJ = 100°C
0.16 0.16
TJ = 25°C
0.12 0.12
TJ = 25°C
0.08 TJ = −55°C 0.08
TJ = −55°C
0.04 0.04

0 0
0 4 8 12 16 20 24 0 4 8 12 16 20 24
ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Figure 4. On−Resistance versus Drain Current
Gate−to−Source Voltage and Gate Voltage
RDS(on), DRAIN−TO−SOURCE RESISTANCE

2 10,000
ID = 6 A VGS = 0 V
1.8 VGS = 5 V
1000 TJ = 150°C
IDSS, LEAKAGE (nA)

1.6
(NORMALIZED)

1.4
100
1.2

1 TJ = 100°C
10
0.8

0.6 1
−50 −25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current

Temperature versus Voltage

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3

Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (Dt)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because drain−gate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (IG(AV)) can be made from a
rudimentary analysis of the drive circuit so that
t = Q/IG(AV)
During the rise and fall time interval when switching a
resistive load, VGS remains virtually constant at a level
known as the plateau voltage, VSGP. Therefore, rise and fall
times may be approximated by the following:
tr = Q2 x RG/(VGG − VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turn−on and turn−off delay times, gate current is
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG − VGSP)]
td(off) = RG Ciss In (VGG/VGSP)
1000
VDS = 0 V VGS = 0 V
800 Ciss
C, CAPACITANCE (pF)
600
Crss
400
200
0
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
NTD3055L104
POWER MOSFET SWITCHING
The capacitance (Ciss) is read from the capacitance curve at
a voltage corresponding to the off−state condition when
calculating td(on) and is read at a voltage corresponding to the
on−state when calculating td(off).
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.
TJ = 25°C
Ciss
Coss
Crss
5 0 5 10 15 20 25
VGS VDS
Figure 7. Capacitance Variation
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 NTD3055L104

6 1000
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
QT
5
Q1 Q2
4 100 tr

t, TIME (ns)
3 tf
VGS
td(off)
2 10
td(on)
ID = 12 A VDS = 30 V
1 ID = 12 A
TJ = 25°C
VGS = 5 V
0 1
0 2 4 6 8 1 10 100
QG, TOTAL GATE CHARGE (nC) RG, GATE RESISTANCE (OHMS)

Figure 8. Gate−To−Source and Drain−To−Source Figure 9. Resistive Switching Time

Voltage versus Total Charge Variation versus Gate Resistance

DRAIN−TO−SOURCE DIODE CHARACTERISTICS

16
VGS = 0 V
IS, SOURCE CURRENT (AMPS)

14

12

10
TJ = 150°C
8
TJ = 25°C
6

2
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage versus Current

SAFE OPERATING AREA

The Forward Biased Safe Operating Area curves define reliable operation, the stored energy from circuit inductance
the maximum simultaneous drain−to−source voltage and dissipated in the transistor while in avalanche must be less
drain current that a transistor can handle safely when it is than the rated limit and adjusted for operating conditions
forward biased. Curves are based upon maximum peak differing from those specified. Although industry practice is
junction temperature and a case temperature (TC) of 25°C. to rate in terms of energy, avalanche energy capability is not
Peak repetitive pulsed power limits are determined by using a constant. The energy rating decreases non−linearly with an
the thermal response data in conjunction with the procedures increase of peak current in avalanche and peak junction
discussed in AN569, “Transient Thermal Resistance − temperature.
General Data and Its Use.” Although many E−FETs can withstand the stress of
Switching between the off−state and the on−state may drain−to−source avalanche at currents up to rated pulsed
traverse any load line provided neither rated peak current current (IDM), the energy rating is specified at rated
(IDM) nor rated voltage (VDSS) is exceeded and the continuous current (ID), in accordance with industry custom.
transition time (tr,tf) do not exceed 10 ms. In addition the total The energy rating must be derated for temperature as shown
power averaged over a complete switching cycle must not in the accompanying graph (Figure 12). Maximum energy at
exceed (TJ(MAX) − TC)/(RqJC). currents below rated continuous ID can safely be assumed to
A Power MOSFET designated E−FET can be safely used equal the values indicated.
in switching circuits with unclamped inductive loads. For

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 NTD3055L104

SAFE OPERATING AREA

100 70

EAS , SINGLE PULSE DRAIN−TO−SOURCE

VGS = 15 V 10 ms ID = 11 A
I D, DRAIN CURRENT (AMPS)

SINGLE PULSE 60
TC = 25°C

AVALANCHE ENERGY (mJ)

50
10

100 ms 40

30
1 ms
1
10 ms dc 20
RDS(on) LIMIT
THERMAL LIMIT 10
PACKAGE LIMIT
0.1 0
0.1 1 10 100 25 50 75 100 125 150 175
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus
Safe Operating Area Starting Junction Temperature
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE

1.0
D = 0.5
(NORMALIZED)

0.2

0.1
0.1 0.05 P(pk)
RqJC(t) = r(t) RqJC
0.02 D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.01 t1 READ TIME AT t1
t2 TJ(pk) − TC = P(pk) RqJC(t)
SINGLE PULSE
DUTY CYCLE, D = t1/t2
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
t, TIME (s)

Figure 13. Thermal Response

di/dt
IS
trr
ta tb
TIME

tp 0.25 IS

IS

Figure 14. Diode Reverse Recovery Waveform

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 NTD3055L104

PACKAGE DIMENSIONS

DPAK
CASE 369C−01
ISSUE O

−T− SEATING
PLANE
B C
INCHES MILLIMETERS
V R E DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
4 C 0.086 0.094 2.19 2.38
Z D 0.027 0.035 0.69 0.88
A E 0.018 0.023 0.46 0.58
S F 0.037 0.045 0.94 1.14
1 2 3 G 0.180 BSC 4.58 BSC
U H 0.034 0.040 0.87 1.01
K J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
L 0.090 BSC 2.29 BSC
F J R 0.180 0.215 4.57 5.45
L S 0.025 0.040 0.63 1.01
H U 0.020 −−− 0.51 −−−
V 0.035 0.050 0.89 1.27
D 2 PL Z 0.155 −−− 3.93 −−−
G 0.13 (0.005) M T STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN

SOLDERING FOOTPRINT*

6.20 3.0
0.244 0.118
2.58
0.101

5.80 1.6 6.172

0.228 0.063 0.243

SCALE 3:1 ǒinches

mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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 NTD3055L104

PACKAGE DIMENSIONS

DPAK−3
CASE 369D−01
ISSUE B

B C NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
V R E 2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
Z A 0.235 0.245 5.97 6.35
A B 0.250 0.265 6.35 6.73
S C 0.086 0.094 2.19 2.38
1 2 3 D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
−T− F 0.037 0.045 0.94 1.14
G 0.090 BSC 2.29 BSC
SEATING
PLANE K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
J
F V 0.035 0.050 0.89 1.27
H Z 0.155 −−− 3.93 −−−
D 3 PL
STYLE 2:
G 0.13 (0.005) M T PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN

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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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