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Roughening Transition
a→(a+µc)mixed phase
db = 3000 Å for R=15
db = 700 Å for R=20
db = 200 Å for R=40
Smoothening Transition
(a+µc)mixed phase→ µc :
db > 7000 Å for R=15
db = 3500 Å for R=20
db = 650 Å for R=40
Characterization of Recombination in Solar Cells From
Dark Current-Voltage Characteristics
1e-3
i-layers that in the bulk of a-Si:H solar
1e-4
1e-5 Cody Gap cells has not allowed JD-V to
1e-6 of 200 Å p/i be used in characterizing gap
1e-7 interface layer states.
1.65eV
1e-8
1e-9
1.72eV
1.86eV
• Bulk recombination has been
1e-10 identified and quantified by
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Voltage (V)
systematic reduction of p/i
contributions in cell structures
Information about the gap • Cell structures are studied in
states in the intrinsic layers can which the two components of
be obtained directly from the
carrier recombination are
bulk recombination.
clearly separated.
Multiple Defect Characterization in Thin Films
Open - Annealed
-1
R
• Great attention must be given to the transition a→(a+µc) and its thickness
dependence on R- films and cells
• Phase diagrams are a powerful guide in optimizing deposition conditions for
fast growth
Two-Transition Phase Diagram:Effect of rf Plasma Power
Summary of a detailed
study based on phase
diagrams on the
optimization of cell
performance
Improvement:
Voc 0.86 to 0.92
Annealed FF same 0.72
DSS FF 0.60 to 0.66
Note: Optimum
performance with
R=40 adjacent to p-a-
SiC:H limited to 200Å
thickness.
Nature of (a+µc) phase and its effect
on solar cell performance
• From RTSE and AFM for R=40 on R=0
4000Å p(a-SiC:H)-i-n film onset of µc nucleation occurs at
R=10 i-layer thickness of 200Å, with complete
coalescence of µc nuclei within d=400Å.
12
Increase in d • Increase in recombination due to reduction
Current Density (mA/cm )
10
in the mobility gaps in R=40 layer to
2
1e-7
R=200
• The p/i recombination for the R=150
0.5 0.6 0.7 0.8 0.9 1.0 1.1 p-Si:H is significantly lower than
Voltage (V)
the lowest achieved with a-SiC:H
two step processes
10-4 0.87
Current Density (A/cm )
2
10-4
2
1 Sun 9 hrs
10-5
1 Sun 100 hrs (DSS) films.
10-6
0.64 4000Å
0.62 p(a-SiC:H)-i-n having i-layers with
0.60 different
0.58 N 0 = 8-10x1016cm-3
D microstructure
0.56
0.54
clearly point to
0.52 creation of multiple
0.01 0.1 1 10 100 1000 defects.
1 Sun Illumination Time (Hours)
Multiple defects confirmed with the lack of correlation in
the FF degradation with ND0 (as measured with ESR),
|α(E)|, and presence of “fast” and “slow” states.
Direct correlation of recombination in
films and cells
0.56
0.58 d=2000Å
d=4000Å
• The “elusive” correlations between
0.60 d=7000Å
light induced changes in thin films
0.62
and those in solar cells have been
Fill Factor
0.64
Time
0.66 established.
• Because the nature and densities of
0.68
0.70
0.60
0.62
0.68
R=10 25oC
o
R=10 75 C
between 1/µτ and FF for cells having
0.70
4000Å p-i-n
different thickness, different i-layers
0.72
0 4x106 8x106 12x106 16x106 20x106 and at different temperatures.
1/µτ (cm-2V)
“Fast” and “slow” states in films and solar cells
• Same annealing
3.6e-7 0.59
kinetics found for
3.4e-7
1 sun
0.58
FF and µτ after
3.2e-7 DSS degradation with
0.57
3.0e-7 high intensity of
µτ (cm2/V)
Fill Factor
0.56
2.8e-7 illumination (Dark
2.6e-7 0.55 and under 1 sun)
2.4e-7 µτ - 1 sun 0.54
µτ - Dark • Established
2.2e-7 10 sun 0.53
2.0e-7 FF - 1 sun presence of “fast”
1.8e-7
DSS FF - Dark 0.52 and “slow” in thin
1.6e-7 0.51 films previously
0 2000 4000 6000 8000 10000
only observed
Recovery Time (Minutes) directly in solar
cells.
Correlation of FF and µτ not only in creation but also
in annealing out of defect states.
Distinctly different light induced defect
states at and below midgap in a-Si:H
35
• Evolution of kN(E) from C
d[α(hν)]/dE in degraded state 30 B
A
(DS) normalized to annealed state 25
NDS(E)/NAS(E)
(AS)
20
• Distinctly different states created
15
around 1.0 and 1.2eV from EC
• Improved microstructure 10
[dα(E)/dE]/[dαAS(E)/dE]
illumination at 25, 75oC kN(E) Spectra 15
25oC
o
75 C
Normalized to AS
10
• In R=10, suppression of defects at
75oC, particularly at 1.2eV, consistent 5
[dα(E)/dE]/[dαAS(E)/dE]
25oC
0
0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
Energy (eV)
Conclusions