SOLAR PHOTOVOLTAIC CELLS BASED ON

DOPING PROTOTYPE BY MAGNETRON.

XXX-X-XXXX-XXXX-X/XX/$XX.00 ©20XX IEEE

 *Roberto C. Villacis Soria.
Facultad de Ingeniería en Sistemas
Electrónica e Industrial
Universidad Técnica de Ambato
Ambato, Ecuador
karlitos.innova@yahoo.es
**Juan P. Pallo Noroña.
Facultad de Ingeniería en Sistemas
Electrónica e Industrial
Universidad Técnica de Ambato
Ambato, Ecuador
juanppallo@uta.edu.ec
***Carlos D. Gordón
Facultad de Ingeniería en Sistemas
Electrónica e Industrial
Universidad Técnica de Ambato
Ambato, Ecuador
cd.gordon@uta.edu.ec
 Abstract: This article describes the design and
implementation of a magnetron doping prototype, with sputtering
technology, for the generation of pulsed plasma gas, with
possible applications to photovoltaic solar cells. For the
generation of plasma a high power controlled DC power source
is used, which allows to transform the voltage of the electrical
network to voltages ranging from a thousand volts to three
thousand volts, which under absolute vacuum conditions within
a glass dome / borosilicate and with the help of a magnetron
produces the plasma gas needed for doping. It also has a pulsed
DC source, which allows ionizing the entire interior of the dome
to allow the free passage of electrons from the plasma gas
generated from the anode to the magnetron. Finally, the pulsed
plasma gas was obtained in a uniform and stable violet color,
indicating a balanced spray of electrons. The developed prototype
has similar technical characteristics to equipment developed
outside the country, but with a significant advantage in terms of
production cost, since it is mostly built with electronic
components that exist in the region, it cheapens the cost of
manufacture in relation to similar equipment. The incursion in
this type of technologies is of great importance to lay the
foundations in the manufacture of equipment that allows the
development of nanostructured electronic components.
Key words: Doping, cathodic sputtering, magnetron, pulsed
plasma gas, photovoltaic solar cell, anode, cathode.
I. INTRODUCTION
The immeasurable increase in the consumption of
electrical energy worldwide, the increase by leaps and
bounds, the traditional forms of electric power generation on
the planet and the lack of energy supply to the vast majority
of developing countries and the measures. The insertion of
new technologies that allow the manufacture of advanced
technological components such as photovoltaic solar cells is
urgent. The design and implementation of magnetron
processing equipment is the most viable way to manufacture
photovoltaic cells, technologies that are clean, friendly to the
ecosystem, for sustainable development and accessible to all
populations with the lowest economic resources, the solution
The energetic problem is of vital importance for the future of
the planet, so it is about the priority topics for Science.
The high price in renewable energies is the limitation for
the mass insertion of this type of energy, and solar energy is
not the exception; According to the Spanish magazine 'EL
MUNDO' carried out in 2014, the price is the great obstacle
for solar energy. [1]
The prices of solar cells are even higher in developing
countries, such as the countries of Latin America, since they
do not have the necessary technology for the development
and manufacture of photovoltaic solar cells.
In 2013, in an article in the IDB's digital magazine (Inter-
American Development Bank), one of his researches reveals
that the cost of financing has a significant impact on the
economics of solar projects because it has high initial costs
and low operating costs. So, extending these initial costs over
such a long period and at the lowest of an interest rate / cost
of capital as possible is fundamental. [2]
The high price in the importation of solar technology is a
problem that usually afflicts countries that do not produce
this type of technology, in which Ecuador is not exempt, as a
consequence of this, it is necessary to import photocells from
countries that produce, with the cost that this represents,
which is why it has been necessary to give priority to the
generation of conventional energy such as: hydroelectric
energy (renewable) combined with a percentage of thermal
energy (non-renewable) from fossil fuels . Since the
beginning of the last century the populations of the mountain
range had small hydroelectric plants built by the
municipalities, however, in the absence of the resource of
water flow and height, the municipalities of the coast
developed small thermal power plants that, in some cases,
worked only a few hours per day. [3]
The high price of solar cells is also reflected in regional
projects, an example of this is the project executed at the
Technical University of Ambato, project called
"Electrolinera", which was developed by Alberto Rios
Villacorta Prometheus researcher of the UTA with
collaboration of researchers from the Faculty of Engineering
in Electronic and Industrial Systems, which details that: 16
SUNPOWER E20-327W photovoltaic modules were
purchased, at a price of $ 372.00 each cell, giving a total cost
of $ 5952.00 with zero cents. [4]
In the vast majority of developing countries around the
world, the high wreck in the acquisition of photovoltaic solar
cells is reflected, this is due to the lack of research and
development in this type of technology, resulting in the
Import of solar cells with the additional price that this import
entails.
A magnetron doping device is composed of electronic,
electrical and vacuum stages, and whose purpose is to emit
plasma gas saturated with electrons on a substrate of any
material, releasing the molecules of the same and hitting the
surface of a target or target, which will be doped with
electrons on its surface acquiring properties such as
conductivity or superconductivity according to the
characteristics of doping.
In 2009, Rojas Martínez, Oyola Lozano, Bustos
Rodríguez, Cardona Bedoya and Pérez Alcázar venture into
the development and implementation of a system with DC
sputtering technology, which includes two electrodes of 25
mm in diameter and a system of cylindrical probes of
Langmuir to characterize the plasma during the growth of
films. [5]
In the Chilean Journal of Engineering in January 2015,
M. Arroyave, J.M. Jaramillo, M. Arenas, C. Saldarriaga, J.
Jaramillo and V. Londoño, have registered the research
article entitled: "Design and implementation of a chemical
vapor deposition reactor to produce thin films". development
and implementation of a PECVD plasma-assisted chemical
vapor deposition reactor (Plasma Enhanced Chemical Vapor
Deposition). [6]
In the repository of the Complutense University of
Madrid, the doctoral thesis has been registered with the
research subject entitled: "Artificial magnetic systems
obtained by sputtering: thin amorphous films of TbFe and
multilayers of NiCO", developed by C.Prados Espasandín. In
October of 1995; The project consists of analyzing the
magnetic properties of materials manufactured using the
technique or sputtering technology. [7]
In 2016, at the National University of Colombia, Roberto
Bernal Correa develops a study of III-V semiconductor
materials, using the sputtering technology maintained a
strong interest in the field of research due to its applications
in the technology of the optoelectronics and solar cells. That
is why in this thesis work focuses on show experimental
results of semiconductor alloys III-V, specifically layers of:
GaAs, In GaAs, GaAs N and bilayers In / GaAs obtained by
the technique cathodic evaporation assisted by magnetic
field. [8]
 It is interesting to highlight the project of Master of
Advanced Technology degree from Engineer Juan Carlos
Ceballos Álvarez, from the National Polytechnic Institute,
Center for Research in Applied Science and Advanced
Technology, Altamira, Tamaulipas, Mexico, November 2009;
where he presents a synthesizer of thin films of the Ti-Al-O
system on glass, silicon and tungsten substrates using the
RF-Sputtering technique using metallic targets of TiAl and
Ti3Al in an Oxygen-Argon atmosphere. [9]
Another of the relevant projects is that of Engineer
Álvaro Iván Arteaga Durán from the Chihuhua Institute of
Technology who, in August 2014, presents a postgraduate
graduation project focused on the study of thin films of WO3
deposited by the technique of reactive Sputtering, whose
objective is to obtain and study thin films of tungsten
trioxide (WO3) with an orthorhombic crystalline structure, in
the present work the results of the study of the thin films of
WO3 deposited by the technique of reactive sputtering are
approached, from the point of view of characterization of the
crystalline structure and microstructure of the films. [10]
II. METHODOLOGY USED FOR THE DEVELOPMENT
OF THE ONSTIGATION PROJECT
The methodology used in the project was an applied
research by means of which it was sought to solve the
problem posed through the implementation of theoretical
knowledge, to arrive at the design and finally to the
implementation of the system, a literature-documentary
investigation that was carried out when obtaining
information from books, theses, manuals, journals, scientific
articles, electronic publications, to have different approaches
with respect to the research topic and to expand knowledge
according to the requirements of the project.
In the experimental research, designs and prototypes
related to doping by magnetron were collected, variables and
processes were manipulated and evaluated in an organized
and controlled manner, consolidating a proposal that aims to
lay the foundations for the development of nanostructured
electronic components.
III. PHYSICAL STRUCTURE OF A MAGNETRON
DOPING EQUIPMENT
The physical structure of the Doping Equipment by
Magnetron usually varies depending on the manufacturer, the
application and the type of doping that you want to perform,
the variations are more in form than in the background,
without leaving aside the essence of doping "Sputtering”.
Fig. 3.1. Physical structure of a doping team by Magnetron.
III.I PRINCIPLE OF OPERATION OF A DOPING
EQUIPMENT BY MAGNETRÓN
An ion erosion or magnetron doping equipment is
generally formed by a camera connected to a system for high
vacuum. In the chamber there is the presence of a gas,
generally a noble gas, Argon being the most common use.
When a voltage is applied, a plasma is generated. The
voltage is applied by means of a pulsed arc direct current
(DC) source placing the target at a negative potential. The
applied potential can be hundreds of volts, can reach up to
thousands of volts, which is not very advisable, so the
current drops substantially as the voltage increases. [11]
The generated plasma is the source of ions that impinges
on the electrode or target. The molecules of the material will
be detached from the target and deposited on a substrate of
any material depending on the application that requires it.
Fig. 3.1 Principle of operation of Sputtering.
III.IISTAGES THAT CONFORM A DOPING
EQUIPMENT BY MAGNETRÓN
The implementation of the prototype was carried out in
four stages, the first stage is responsible for the generation of
vacuum by means of a high vacuum two-stroke pump, the
second stage is responsible for generating high voltage by
means of a switched source, continuing with the third stage
responsible for the regulation of power necessary for the
development of the system and finally the fourth stage
responsible for the generation of plasma that transports the
molecules of the substrate to the target to dope, thus creating
the electrically conductive surface.
The stages that generally make up a process of Doping by
Magnetron are:
 High vacuum generation stage
 High voltage generation stage
 Power control stage
 Plasma generation stage
 Fig. 3.2 Block diagram of the stages of a doping team by Magnetron
A. High vacuum generation stage
It consists in extracting all the oxygen and unwanted
gases that are inside the dome, by means of a two-stroke high
vacuum pump, which is responsible for this task that is
performed inside the borosilicate glass dome, The absorption
of oxygen allows the free transit of ions which allows the
generation of plasma gas, which transports the molecules of
the substrate towards the target.
With the following formula, proceed in the following
design section, to the calculation for obtaining the vacuum
time in the borosilicate glass dome.
Volumetric capacity of the glass dome.
V= π(R) ^2 (1)
B. Power control stage
To control the voltage of alternating current that enters
the high voltage transformer, a power control circuit was
used with electronic devices suitable for this type of task. A
diac and a triac were used as main devices, this type of
circuits serve as a replacement to the old Variac that was
used to control the power of Sputtering equipment with the
high cost represented by these control equipment.
Voltage regulators that use SCRs today are widely used.
The voltage in the load is regulated by controlling the instant
on of the SCRs. There are several circuits for single-phase
and three-phase regulators of this type. Although the output
voltage can be controlled very precisely by this method, the
harmonics introduced into the voltage in the load voltage are
quite large and this type of circuit is used for applications
where the need for the waveform in the load is not strictly
sinusoidal. This type of regulators are used for AC power
control. [13]
The load for the power control circuit in this case is of the
inductive type, so the following was used, as shown in figure
3.5.The design of the power circuit is shown in more detail in
the later section that corresponds to the total design of the
prototype.
Fig. 3.5. Power Circuit with triac, diac and buffer network [14]
If the load that is controlled is strongly inductive, you
may want the phase shift of the current over the mains
voltage introduced by the load to be such that the zero
crossing of the current coincides with a large voltage applied
to the triac. Under these conditions, the triac must vary its
voltage between anodes from the priming voltage, practically
zero up to a few hundred volts as a function of extremely
small time, and a new unwanted triac can occur. [14]
For the implementation and subsequent design of the
power control stage, the mathematical calculations of the
circuit were first carried out by means of the formulas, (48),
(49) and (50).
Inductive Reactance Formula [14]
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