Si l i con Junct i on FETs XI AOSHENG

Sy mbol :
Drain
LH 0 3 Se rie s of Produc t s int e rc onve r t :

2 SK 3 0 A Gate
Source

Silicon N-Chinnel Junction FET

Pac k age ex ampl e:
„ Application:
For charge sensor, meter amplifier circuit, rheostat , chopper and
gain controller for AGC ，electronic switch.

„ Absolute Maximum Ratings (Ta=25℃)

Parameter Symbol Ratings Unit
Gate to Drain voltage VGDO -50 V Package D S G
Gate to Source voltage VGSO -50 V SC-59
Gate current IG 10 mA SOT-23

Allowable power dissipation TO-92S

PD 250 mW
Junction Temperature Tj 125 ℃ * TO-92 3 1 2
Storage Temperature TO-18
Tstg -55 to +125 ℃

„ Electrical Characteristics (Ta=25℃)

Prameter Symbol Conditions min typ max Unit
Drain to Source cut-off current IDSS VDS = 10V, VGS = 0V 0.3 6.5 mA
Gate to Source leakage current IGSS VGS= -30V, VDS = 0V -1.0 nA
Gate to Drain voltage VGDS IG = -100μA，VDS = 0V -50 V
Gate to Source cut-off voltage VGS(OFF) VDS = 10V, ID = 0.1μA -0.4 -5.0 V
Forward transfer admittamce | Yfs | VDS= 10V，VGS= 0V，f = 1KHZ 1.2 mS
Input capacitance (Common Source) Ciss 8.2 pF
VDS= 10V，VGS= 0V，f = 1MHZ
Reverse transfer capacitance (Common Source) Crss 2.6 pF

„ IDSS Rank Classification

Runk R O Y GR
IDSS(mA) 0.3 to 0.75 0.6 to 1.4 1.2 to 3.0 2.6 to 6.5
Marking Symbol 035D 035E 035F 035G

Xi aos heng El ec t r oni c & Tel ec hnol ogy CO. , LTD.

Tel : 86- 021- 64859219 Fax: 86- 021- 64859219 www. on- el e. or g Emai l : xi aosheng_sh@126. com
Room 206 3r d bui l di ng 195- 16 Ti anl i n RD. Shanghai Chi na