Documente Academic
Documente Profesional
Documente Cultură
ABSTRACT ……….………………………… ⅳ
LIST OF TABLES…………………………… ⅴ
LIST OF GRAPHS…………………………… ⅷ
1. INTRODUCTION…………………………………… 1
2. CONSTRUCTION………………………………………. 4
3. CIRCUITS&TOPOLOGY……………………….. 7
i
4. DESCRIPTION OF THE DEVICES USED…………... 15
4.1. DC SUPPLY…………………………………. 16
4.3. CAPACITORS……………………………………….. 27
4.4. DIODES……………………………………………… 31
4.5. RESISTORS………..………………………………… 34
4.6.2 APPLICATIONS……………………… 38
4.7.1 MOSFET……….………...……………. 39
ii
4.7.2 IGBT………………………………….. 45
5. WORKING OF MARXGENERATOR………………………… 49
6. RESULTS ....……………………… 51
7. BIBLIOGRAPHY………………………………………………….. 58
iii
ABSTRACT:
Impulse generators were used to generate high voltage pulses. Marx generator is a
multistage impulse generator. Its purpose is to generate high pulse using low dc voltage.
Conventional Marx generator used capacitors, spark gap switches and resistors. Spark
gaps are huge mechanical switches which were to be triggered through an external circuit
and those switches have short life time. The charging current flows through the resistors
results in long charging time and few output voltage will appear during this charging
period.
This project is a modern Marx generator where these spark gap switches are
replaced with semiconductor switches and resistors are replaced by diodes. In modern
Marx Generator these switches are the main part because they provide the flexibility to
the output pulse. The bipolar Marx generator is able to produce positive, negative and
bipolar pulses. Pulse generators are used to trigger the semiconductor switches.
parallel and then by discharging those capacitors in series across the load by triggering
the switches in a proper manner. Diodes are used in modern Marx generator to maintain
IGBT’S are better because of low on-state losses and high switching frequency.
iv
LIST OF TABLES
v
LIST OF FIGURES
vi
LIST OF GRAPHS
vii
1
INTRODUCTION
1
1.1. PRESENT SCENARIO
Protection of power system is an important aspect for the continued service of the
electrical power system. Mostly the protection of electrical power depends on the
performance of insulation systems under transient over voltage conditions arises due to
lightening and switching applications. Transient over voltages in addition to the abrupt
changes in the state of power systems, e.g. switching operations or faults are known as
switching impulse voltages and that due to lightening are known as lightening impulse
voltages.
electrical apparatus known as impulse generator. High impulse voltages are used to test
the durability of electric power equipment against lightning and switching surges. The
2
1.2 SCOPE OF THE PROJECT
A medical linac is used for the cancer treatment and consists of an accelerating
forming network is commonly used in linac. As the improvement of the high power
semiconductors in switching speed, voltage rating, and current rating, an insulated gate
bipolar transistor has become the more popular device used for pulsed power systems.
storage-switch stages based on the Marx generator. The advantage of our modulator
comes from the use of semiconductors to control charging and discharging of the storage
capacitor at each stage and it allows to generate the pulse with various amplitudes,
3
2
CONSTRUCTION
4
2.1 REQUIRED DEVICES CONNECTED
devices in simulation. The devices required to construct the model are tabulated as per
2 Pulse Generator
4 IGBT
5 Resistors 100 Ω
6 Capacitors 30 µf,60,90,120,150
8 Voltage Measurement
9 Scope
5
2.2 PLATFORM REQUIRED
By using the required devices a Simulink model is developed from which the required
operation is taken place. The simulation model is run through MATLAB 2018 which is
and proprietory programming language developed by Math Works.This is simple and user
At supply end :
the supply end. The supply voltage is of DC type. At the supply end, we trigger pulses in
order to charge the capacitors in series. IGBT’s which are acting as a switches are used to
charge those capacitors in a proper time interval. Pulse generators are connected to those
IGBT’s.
At load end :
across the resistive load connected at the end. The high voltage at the end can be obtained
by discharging all the capacitors connected in the circuit in a series manner. The
inductive load is also connected where its application is needed. Diodes used in this
At the load side, the number of stages can be increased to get the high
voltage based on our requirement. The output voltage obtained is number of times the
6
3
CIRCUITS&TOPOLOGY
7
3.1 TRADITIONAL MARX GENERATOR
8
TRADITIONAL MARX GENERATOR :
shown in fig.3.1. Spark gap switches are huge mechanical switches which were to be
triggered through an external circuit. Resistors used in the circuit may also have losses.
The capacitors connected in the circuit are fully charged in parallel sequence. The high
In modern Marx Generator, we replace resistors with diodes and spark gap
Pulse generators are used to trigger the semi-conductor switches. We can generate
discharge path. Based on the application, the characteristics of the generator are different.
The different characteristics can be recognized based on the rise time, fall time, pulse
width, pulse repetitive frequency (PRF) and magnitude of the output pulse.
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3.2 MODERN MARX GENERATOR
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3.2.1 CIRCUIT TOPOLOGY :
A circuit topology having six switches which can be used to generate repetitive high
• In this circuit Udc is the source voltage, rdc is the equivalent internal resistance of
thesource. Ddc and Tdc are input diode and a switch respectively which are useful
• This topology can have of several stages. Each stage is independent of the other
stages.
• Even during fault conditions, the stages remains unaffected as the fault current
• A single stage contains six solid state switches denoted as Tai, Tbi, Tci, Tdi, Tei
and Tgi, two diodes namely Dfi and Dhi and one capacitor Ci.
• Since this topology gives bipolar pulse, an additional capacitor is required at the
• A certain dead time has been provided between turning ON of the switches on the
same leg to avoid shoot-through problem i.e. two switches on the same leg getting
switched ON at the same time. This may create a direct short across the source.
which will give us three different paths of charging. They are as follows.
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• Tdc- Ddc- Dhi- Tgi- Dfi- Tei
provided so that the switches are relieved from the over stress which may in turn increase
• Once all the capacitors are charged, they are discharged by triggering the required
switches. For negative pulse, the switch Tbi and switch Tci are to be triggered. As
simulated. The name six switch topology is based on the number of switches per
stage. An extra switch next to the voltage source is placed in order to isolate the
• Selection of Switches:
The IGBT switches are selected instead of MOSFETs for high power
low frequency operation. Its selection is based on the load current and the current
switches.
• Selection of Capacitor:
constant.
𝐶𝑒= 30μF
𝐶𝑖=𝐶𝑒×𝑛
𝐶𝑖=30 μ𝐹×2
𝐶𝑖=60 μ𝐹
• Selection of Diodes:
The peak inverse voltage or VRRM of diode should be more than the maximum
input DC voltage. The peak current rating or forward current (IF) of diode is
greater than the maximum source current which is input DC voltage divided by
13
the input resistance (Rin). Main purpose of the diodes is to prevent discharge of
capacitors through wrong paths.For obtaining the bipolar output pulses, triggering
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4
DESCRIPTION OF THE
DEVICES USED
15
4.1. DC POWER SUPPLY
load. The primary function of a power supply is to convert electric current from a source
to the correct voltage, current, and frequency to power the load. As a result, power
others are built into the load appliances that they power. Examples of the latter include
power supplies found in desktop computers and consumer electronic devices. Other
functions that power supplies may perform include limiting the current drawn by the load
to safe levels, shutting off the current in the event of an electrical fault, power
conditioning to prevent electronic noise or voltage surges on the input from reaching the
load, power-factor correction, and storing energy so it can continue to power the load in
Depending on its design, a DC power supply may be powered from a DC source or from
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4.1.2.1. TYPES OF DC POWER SUPPLY
a) AC-to-DC SUPPLY
c) LINEAR REGULATOR
a. AC –to- DC SUPPLY
DC power supplies use AC mains electricity as an energy source. Such power supplies
will employ a transformer to convert the input voltage to a higher or lower AC voltage.
voltage.
The filter removes most, but not all of the AC voltage variations; the remaining AC
voltage is known as ripple. The electric load's tolerance of ripple dictates the minimum
amount of filtering that must be provided by a power supply. In some applications, high
ripple is tolerated and therefore no filtering is required. For example, in some battery
nothing more than a transformer and a single rectifier diode, with a resistor in series with
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FIG.4.1.1 Schematic of basic AC to DC power supply
rectified and then filtered to obtain a DC voltage. The resulting DC voltage is then
switched on and off at a high frequency by electronic switching circuitry, thus producing
occurs at a very high frequency (typically 10 kHz — 1 MHz), thereby enabling the use
of transformers and filter capacitors that are much smaller, lighter, and less expensive
than those found in linear power supplies operating at mains frequency. After the
produce the DC output voltage. If the SMPS uses an adequately insulated high-frequency
transformer, the output will be electrically isolated from the mains; this feature is often
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FIG.4.1.2.BASIC SWITCHED MODE POWER SUPPLY BLOCK DIAGRAM
c. LINEAR REGULATOR :
constant, often specific, lower DC voltage. In addition, they often provide a current
limiting function to protect the power supply and load from overcurrent (excessive,
A constant output voltage is required in many power supply applications, but the
voltage provided by many energy sources will vary with changes in load impedance.
Furthermore, when an unregulated DC power supply is the energy source, its output
voltage will also vary with changing input voltage. To circumvent this, some power
supplies use a linear voltage regulator to maintain the output voltage at a steady value,
independent of fluctuations in input voltage and load impedance. Linear regulators can
also reduce the magnitude of ripple and noise on the output voltage.
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4.2 PULSE GENERATOR
A pulse generator is either an electronic circuit or a piece of electronic test
equipment used to generate rectangular pulses. Pulse generators are used primarily for
working with digital circuits, related function generators are used primarily for analog
circuits.
Pulse generators are used to provide pulses for use in a variety of electronic applications.
to produce pulses that are rectangular in nature, often capable of driving logic
circuitry, although they are not necessarily confined to just this type of application.
Pulse width: In order to produce a variety of waveforms, the pulse width can be
varied.
Repetition rate : The repetition rate is a key parameter. When used in a "free run"
generator. Pulse triggering can normally occur on either the negative or positive edge
Pulse delay: When a pulse is triggered it is normal to be able to select a delay for the
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Pulse amplitude: Although the pulse amplitude will normally be required to drive
logic circuits, the amplitude is normally adjustable. If nothing else this is required
Pulse rise and fall times: For some applications it may be necessary to be able to
adjust the rise and fall times of the logic outputs. This facility is available on many
pulse generators.
mixture of both. Elements such as triggering and the pulse generation will almost
certainly utilise digital technology, but aspects such as the rise and fall time control on
Often pulse generators are required to produce TTL logic outputs. These
generators may be referred to as TTL pulse generators. Their output levels will conform
Although TTL levels are widely used and there are many different
families of TTL circuits that have been used including standard TTL, low power, low
power Schottky and many more versions of TTL. However the standard definitions of the
Some of the later pulse generators are what are termed multichannel pulse
generators. These multichannel pulse generators can produce several channels of pulses
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with independent pulse widths and delays with independent outputs and even
independent polarities.
These pulse generators are often used for synchronizing, delaying, gating
and triggering multiple devices often with respect to a single event. This means that even
though the outputs are independent, they are all linked to the same source in one way or
another. This allows for far more sophisticated systems to be linked from a single source,
C. MICROWAVE PULSES:
approximately 100 picoseconds are often termed as "microwave pulsers" and typically
generate these ultra-short pulses using Step recovery diode (SRD) or Nonlinear
Transmission Line (NLTL) methods. Step Recovery Diode pulse generators are
inexpensive but typically require several volts of input drive level and have a moderately
high level of random jitter (usually undesirable variation in the time at which successive
pulses occur).
CRO.They provide both qualitative and quantitative information of the system under
between a pulse generator and a square wave generator is in the duty cycle.
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Duty cycle = (pulsewidth) / (pulse period)
Requirements Of Pulse:
The pulse should have minimum distortion, so that any distortion in the display is
The basic characteristics of the pulse are risetime, overshoot, ringing, sag and
undershoot.
power is required by the test circuit, e.g. for magnetic core At the same time, the
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4.2.2 BLOCK DIAGRAM OF PULSE GENERATOR:
The duty cycle can be varied from 25% to 75%. Two independent outputs are available, a
50Q source that supplies pulses with a rise and fall time of 5ns at 5V peak amplitude. The
externals signals.
The basic operating loop consists of the current sources, the ramp
capacitor, the Schmitt trigger and the current switching circuit as shown in fig.4.2.2.
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FIG.4.2.2 BASIC GENERATING LOOP
The upper current source supplies a constant current to the capacitor and
the capacitor voltage increases linearly. When the positive slope of the ramp voltage
reaches the upper limit set by the internal circuit components, the Schmitt trigger changes
state. The trigger circuit output becomes negative and reverses the condition of the
current switch. The capacitor discharges linearly, controlled by the lower current source.
When the negative ramp reaches a predetermined lower level, the Schmitt trigger
switches back to its original state. The entire process is then repeated. The ratio i1/i2
determines the duty cycle, and is controlled by symmetry control. The sum of i1 and i2
determines the frequency. The size of the capacitor is selected by the multiplier switch.
The unit is powered by an internal supply that provides regulated voltages for all stages
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4.2.5. APPLICATIONS OF PULSE GENERATOR :
Pulse generators are used to drive devices such as switches,lasers and optical
The output of a pulse generator may also be used as the modulation signal for a
signal generator.
26
4.3 CAPACITORS
with resistors and inductors, these are one of the most fundamental passive components
we use. The capacitors are special as they have the ability to store energy they’re like a
fully charged electric battery. Common applications include local energy storage,
Not all capacitors are created equal. Each capacitor is built to have a
specific amount of capacitance. The capacitance of a capacitor tells you how much
charge it can store, more capacitance means more capacity to store charge. The standard
1mF) is a big capacitor. Usually you’ll see capacitors rated in the pico- (10-12) to
The schematic symbol for a capacitor actually closely resembles how it’s
made. A capacitor is created out of two metal plates and an insulating material called
a dielectric. The metal plates are placed very close to each other, in parallel, but the
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FIG 4.3.1 A DI-ELECTRIC SANDWHICHED CAPACITOR
The dielectric can be made out of all sorts of insulating materials: paper,
glass, rubber, ceramic, plastic, or anything that will impede the flow of current.
or other metals. They’re each connected to a terminal wire, which is what eventually
it’s constructed. More capacitance requires a larger capacitor. Plates with more
overlapping surface area provide more capacitance, while more distance between the
plates means less capacitance. The material of the dielectric even has an effect on how
many farads a cap has. The total capacitance of a capacitor can be calculated with the
equation:
dielectric material), A is the amount of area the plates overlap each other, and d is the
28
CHARGING AND DISCHARGING
When positive and negative charges coalesce on the capacitor plates, the
capacitor becomes charged. A capacitor can retain its electric field – hold its charge –
because the positive and negative charges on each of the plates attract each other but
At some point the capacitor plates will be so full of charges that they just
can’t accept any more. There are enough negative charges on one plate that they can repel
any others that try to join. This is where the capacitance (farads) of a capacitor comes
into play, which tells you the maximum amount of charge the cap can store.
If a path in the circuit is created, which allows the charges to find another
path to each other, they’ll leave the capacitor, and it will discharge.
Diode rectifiers can be used to turn the AC voltage coming out of your
wall into the DC voltage required by most electronics. But diodes alone can’t turn an AC
signal into a clean DC signal, they need the help of capacitors! By adding a parallel
29
GRAPH 4.3.1 A RECTIFIED SIGNAL
changes in voltage. The filter capacitor will charge up as the rectified voltage increases.
When the rectified voltage coming into the cap starts its rapid decline, the capacitor will
access its bank of stored energy, and it’ll discharge very slowly, supplying energy to the
load.
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4.4 DIODES
A diode is a two-terminal electronic component that
conducts current primarily in one direction (asymmetric conductance); it has low (ideally
zero) resistance in one direction, and high (ideally infinite) resistance in the other.
A diode vacuum tube or thermionic diode is a vacuum tube with two electrodes, a
heated cathode and a plate, in which electrons can flow in only one direction, from
cathode to plate.
voltage characteristic, or I–V graph (see graph below). The shape of the curve is
layer or depletion region that exists at the p–n junction between differing semiconductors.
When a p–n junction is first created, conduction-band (mobile) electrons from the N-
doped region diffuse into the P-doped region where there is a large population of holes
(vacant places for electrons) with which the electrons "recombine". When a mobile
electron recombines with a hole, both hole and electron vanish, leaving behind an
immobile positively charged donor (dopant) on the N side and negatively charged
acceptor (dopant) on the P side. The region around the p–n junction becomes depleted
However, the width of the depletion region (called the depletion width)
cannot grow without limit. For each electron–hole pair recombination made, a positively
31
charged dopant ion is left behind in the N-doped region, and a negatively charged dopant
ion is created in the P-doped region. As recombination proceeds and more ions are
created, an increasing electric field develops through the depletion zone that acts to slow
and then finally stop recombination. At this point, there is a "built-in" potential across the
depletion zone.
A. REVERSE BIAS :
pairs are actively being created in the junction by, for instance, light;
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B. FORWARD BIAS :
current through the p–n junction (i.e. substantial numbers of electrons and holes
approximately 0.7 V (0.3 V for germanium and 0.2 V for Schottky). Thus, if an
external voltage greater than and opposite to the built-in voltage is applied, a
current will flow and the diode is said to be "turned on" as it has been given an
external forward bias. The diode is commonly said to have a forward "threshold"
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4.5 RESITORS
Resistors - the most ubiquitous of electronic components. They are a critical piece
in just about every circuit. And they play a major role in our favorite equation, Ohm’s
Law.
are passive components, they only consume power (and can’t generate it). Resistors are
usually added to circuits where they complement active components like op-amps,
microcontrollers, and other integrated circuits. Commonly resistors are used to limit
between two points where 1 volt (1V) of applied potential energy will push 1 ampere
(1A) of current.
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4.5.3 TYPES OF RESISTORS
Resistors come in a variety of shapes and sizes. They might be through-hole or surface-
mount. They might be a standard, static resistor, a pack of resistors, or a special variable
resistor.
There are variety of other, special-purpose resistors out there. Resistors may come in pre-
wired packs of five-or-so resistor arrays. Resistors in these arrays may share a common
Resistors don’t have to be static either. Variable resistors, known as rheostats, are
resistors which can be adjusted between specific ranges of values. Similar to the rheostat
is the potentiometer. Pots connect two resistors internally, in series, and adjust a centre
tap between them creating an adjustable voltage divider. These variable resistors are
often used for inputs, like volume knobs, which need to be adjustable.
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FIGURE 4.5.2.VARIABLE RESISTORS
Though they may not display their value outright, most resistors are marked to
show what their resistance is. PTH (Plated Through Hole) resistors use a color-coding
system (which really adds some flair to circuits), and SMD (Surface Mounted Device)
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4.6. SPARK GAP SWITCHES :
two conducting electrodes separated by a gap usually filled with a gas such as air,
designed to allow an electric spark to pass between the conductors. When the potential
difference between the conductors exceeds the breakdown voltage of the gas within the
gap, a spark forms, ionizing the gas and drastically reducing its electrical resistance. An
electric current then flows until the path of ionized gas is broken or the current reduces
below a minimum value called the "holding current". This usually happens when
the voltage drops, but in some cases occurs when the heated gas rises, stretching out and
then breaking the filament of ionized gas. Usually, the action of ionizing the gas is
violent and disruptive, often leading to sound (ranging from a snap for a spark
as spark gap radio transmitters, electrostatic machines, and X-ray machines. Their most
widespread use today is in spark plugs to ignite the fuel in internal combustion engines,
but they are also used in lightning arresters and other devices to protect electrical
The light emitted by a spark does not come from the current
of electrons itself, but from the material medium fluorescing in response to collisions
from the electrons. When electrons collide with molecules of air in the gap, they excite
their orbital electrons to higher energy levels. When these excited electrons fall back to
37
their original energy levels, they emit energy as light. It is impossible for a visible spark
4.6.2 APPLICATIONS :
a) Ignition Devices
A spark plug uses a spark gap to initiate combustion. The heat of the ionization
trail, but more importantly, UV radiation and hot free electrons (both cause the
radiation is produced and successfully spread into the combustion chamber, the
b) Protective Devices
power transformers, in power plants and electrical substations. Such switches are
contact and two leaf springs holding the other end as second contact. If the blade
is opened, a spark may keep the connection between blade and spring conducting.
The spark ionizes the air, which becomes conductive and allows an arc to form,
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4.7. SEMICONDUCTOR SWITCHES :
Such a device is also called a power device or, when used in an integrated circuit,
a power IC.
on or off), and therefore has a design optimized for such usage; it should usually not be
used in linear operation. Linear power circuits are widespread as voltage regulators, audio
4.7.1. MOSFET:
FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated
by the controlled oxidation of silicon. It has an insulated gate, whose voltage determines
the conductivity of the device. This ability to change conductivity with the amount of
applied voltage can be used for amplifying or switching electronic signals. The main
advantage of a MOSFET is that it requires almost no input current to control the load
an enhancement mode MOSFET, voltage applied to the gate terminal increases the
conductivity of the device. In depletion mode transistors, voltage applied at the gate
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4.7.1.1 TYPES OF MOSFET :
MOSFETs are three terminal devices with a Gate, Drainand Source and both
P-channel (PMOS) and N-channel (NMOS) MOSFETs are available. The main
difference this time is that MOSFETs are available in two basic forms:
“Normally Open” switch. The symbols and basic construction for both configurations
40
The construction of the Metal Oxide Semiconductor FET is very different to that of the
Junction FET. Both the Depletion and Enhancement type MOSFETs use an electrical
field produced by a gate voltage to alter the flow of charge carriers, electrons for n-
channel or holes for P-channel, through the semiconductive drain-source channel. The
gate electrode is placed on top of a very thin insulating layer and there are a pair of small
The gate of a junction field effect transistor, JFET must be biased in such a way as to
reverse-bias the pn-junction. With a insulated gate MOSFET device no such limitations
apply so it is possible to bias the gate of a MOSFET in either polarity, positive (+ve) or
negative (-ve).
This makes the MOSFET device especially valuable as electronic switches or to make
logic gates because with no bias they are normally non-conducting and this high gate
input resistance means that very little or no control current is needed as MOSFETs are
voltage controlled devices. Both the p-channel and the n-channel MOSFETs are available
in two basic forms, the Enhancement type and the Depletion type.
The Depletion-mode MOSFET, which is less common than the enhancement mode
types is normally switched “ON” (conducting) without the application of a gate bias
device. The circuit symbol shown above for a depletion MOS transistor uses a solid
41
For the n-channel depletion MOS transistor, a negative gate-source voltage, -VGS will
deplete (hence its name) the conductive channel of its free electrons switching the
transistor “OFF”. Likewise for a p-channel depletion MOS transistor a positive gate-
source voltage, +VGS will deplete the channel of its free holes turning it “OFF”.
In other words, for an n-channel depletion mode MOSFET: +VGS means more electrons
and more current. While a -VGS means less electrons and less current. The opposite is
also true for the p-channel types. Then the depletion mode MOSFET is equivalent to a
“normally-closed” switch.
counterparts were the drain-source channel is inherently conductive with the electrons
and holes already present within the n-type or p-type channel. This doping of the channel
produces a conducting path of low resistance between the Drain and Source with
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4.7.1.5 ENHANCEMENT-MODE MOSFET
depletion-mode type. Here the conducting channel is lightly doped or even undoped
making it non-conductive. This results in the device being normally “OFF” (non-
conducting) when the gate bias voltage, VGS is equal to zero. The circuit symbol shown
above for an enhancement MOS transistor uses a broken channel line to signify a
For the n-channel enhancement MOS transistor a drain current will only flow when a gate
voltage ( VGS ) is applied to the gate terminal greater than the threshold voltage ( VTH )
The application of a positive (+ve) gate voltage to a n-type eMOSFET attracts more
electrons towards the oxide layer around the gate thereby increasing or enhancing (hence
its name) the thickness of the channel allowing more current to flow. This is why this
Increasing this positive gate voltage will cause the channel resistance to decrease further
causing an increase in the drain current, ID through the channel. In other words, for an n-
channel enhancement mode MOSFET: +VGS turns the transistor “ON”, while a zero or -
“normally-open” switch.
The reverse is true for the p-channel enhancement MOS transistor. When VGS = 0 the
device is “OFF” and the channel is open. The application of a negative (-ve) gate voltage
43
to the p-type eMOSFET enhances the channels conductivity turning it “ON”. Then for an
p-channel enhancement mode MOSFET: +VGS turns the transistor “OFF”, while -
“ON” resistance and extremely high “OFF” resistance as well as their infinitely high
input resistance due to their isolated gate. Enhancement-mode MOSFETs are used in
integrated circuits to produce CMOS type Logic Gates and power switching circuits in
the form of as PMOS (P-channel) and NMOS (N-channel) gates. CMOS actually stands
for Complementary MOS meaning that the logic device has both PMOS and NMOS
44
4.7.2. IGBT(INSULATED GATE BIPOLAR TRANSISTOR) :
MOSFETs and BJTs for use in power supply and motor control circuits. The Insulated
Gate Bipolar Transistor also called an IGBT for short, is something of a cross between
The Insulated Gate Bipolar Transistor, (IGBT) combines the insulated gate (hence the
first part of its name) technology of the MOSFET with the output performance
characteristics of a conventional bipolar transistor, (hence the second part of its name).
The result of this hybrid combination is that the “IGBT Transistor” has the output
like a MOSFET.
The advantage gained by the insulated gate bipolar transistor device over a BJT or
MOSFET is that it offers greater power gain than the standard bipolar type transistor
combined with the higher voltage operation and lower input losses of the MOSFET. In
configuration as shown.
45
FIG 4.7.2.1 INSULATED GATE BIPOLAR TRANSISTOR
We can see that the insulated gate bipolar transistor is a three terminal, transconductance
device that combines an insulated gate N-channel MOSFET input with a PNP bipolar
Because the IGBT is a voltage-controlled device, it only requires a small voltage on the
Gate to maintain conduction through the device unlike BJT’s which require that the Base
46
Also the IGBT is a unidirectional device, meaning it can only switch current in the
“forward direction”, that is from Collector to Emitter unlike MOSFET’s which have bi-
The principal of operation and Gate drive circuits for the insulated gate bipolar transistor
are very similar to that of the N-channel power MOSFET. The basic difference is that the
resistance offered by the main conducting channel when current flows through the device
in its “ON” state is very much smaller in the IGBT. Because of this, the current ratings
The main advantages of using the Insulated Gate Bipolar Transistor over other types
47
Input Impedance Low High High
48
5
WORKING
49
5.1. WORKING OF MARX GENERATOR
Marx Generator is based on parallel charging of the capacitors of all the stages to
the input voltage and then discharging them in series to generate high voltage pulse
across the load by triggering the spark gaps in conventional Marx Generator. The pulse
width and amplitude both can be controlled by controlling the gate pulses to the switches.
A two stage, six switch solid state Marx Generator has been designed and simulated. The
name six switch topology is based on the number of switches per stage. An extra switch
next to the voltage source is placed in order to isolate the source from the stages during
the pulse process. As this topology is applicable for all types of load, the discharge of
loadis mandatory especially for capacitive and inductive load. For the discharge of load
capacitances, the switch Tdiis triggered. Now, the load capacitance can discharge through
anti parallel diode of Tciand the switch Tdi as shown in fig.3.2. For inductive load, the
load inductances can freewheel through the anti-parallel diodes of switches Tbi and
Tcirespectively for negative pulse in fig.3.2. After obtaining the negative pulse, a dead
band is provided within which the capacitors are charged which are again to be
discharged to produce positive pulse. For this purpose switches Tai and Tdi are triggered
in fig.3.2.
The output voltage obtained can be varied with the change in number of
stages connected in the circuit. For positive pulses,the capacitor connected at the end
doesn’t involved and discharging takes place with the front connected capacitor.For
negative pulses,voltage is obtained with the discharge of capacitor connected at the end.
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6
RESULTS
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6.1. 2-STAGE MARX GENERATOR
SIMULATION CIRCUIT
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RESULTS OF 2-STAGE MARX GENERATOR
The output obtained from the 2-stage Marx Generator is 200v as shown in graph.6.1.We
can observe that the voltage gets doubled because the number of stages connected is two.
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6.2. 8-STAGE MARX GENERATOR
SIMULATION CIRCUIT
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RESULT OF 8-STAGE MARX GENERATOR
The output obtained from 8-stage bipolar Marx Generator is shown in graph.6.2.We can
observe that the output voltage is 800v which is 8 times the input voltage because the
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POSITIVE PULSE
In positive pulse process first capacitor participates but the n+1 capacitor do not
contribute for this process. The voltage applied across the load is given by,
Vo= nUdc
56
NEGATIVE PULSE
For negative pulse process last capacitor C(n+1) is involved. But the first capacitor does
not contribute for the negative pulse. The voltage available across the load is given by,
Vo= - nUdc
57
BIBILIOGRAPHY
[1] Seung-Bok Ok, Hong-Je Ryoo, Sung-Roc Jang, Suk-Ho Ahn, and
GennadiGoussev, “Design of a High-Efficiency 40-kV, 150-A, 3-kHz Solid-State
Pulsed Power Modulator”, IEEE Trans. on Plasma Sci. vol. 40, no. 10, Oct. 2012,
pp.2569-2577.
[2] H. Akiyama, T. Sakugawa, T. Namihira, K. Takaki, Y. Minamitani, and N.
Shimomura, “Industrial applications of pulsed power technology”, IEEE Trans.
Dielectr. Electr. Insul., vol. 14, no. 5, pp. 1051–1064, Oct. 2007.
[3] C.L. Wadhawa, Prof. and head of department of Electrical Engineering Delhi
Coe; Delhi-110006, India. New Age International (P) ltd. 2012.
[4] Richard Cassel, “The Evolution of Pulsed Modulators from the Marx Generator to
the Solid State Marx Modulator and Beyond”, IEEE, June 3-7 2012,San Diego,
CA, pp. 9-13.
[5] "Solid State Pulsed Power Systems", Dr. Stephan Roche Physique & industrie, 17
rue de la rente Logerot, 21160 Marsannay la cote, France. [6] R. Cassel and S.
Hitchcock, ―A new type high voltage fast rise/fall time solid state Marx pulse
modulator‖, IEEE Particle Accelerator Conf., New Mexico, USA, pp. 865-867,
2007.
[6] Yifan Wu, Kefu Liu, Jian Qiu , XiaoXu Liu and Houxiu Xiao, " Repetitive and
High Voltage Marx Generator Using Solid-state Devices", IEEE Trans. on
Dielectrics and Electrical Insulation Vol. 14, No. 4; August 2007.
[7] Jian Qiu, Kefu Liu and Liuxia Li, " Stray Parameters in a Novel Solid State
Pulsed Power Modulator", IEEE Trans. on Dielectrics and Electrical Insulation
Vol. 20, No. 4; August 2013.
[8] Ju Won Baek, Dong Wook Yoo, Geun Hie Rim and Jih-Sheng (Jason) Lai, "Solid
State Marx Generator Using Series- Connected IGBTs", IEEE Trans. on Plasma
Science, Vol. 33, No. 4, August 2005.
[9] L.M.Redondo, J.Fernando Silva, P.Tavares and E.Margato, "Solid-state Marx
generator design with an energy recovery reset circuit for output transformer
association".
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