TMP10N60/TMPF10N60

TMP10N60G/TMPF10N60G
Features VDSS = 660 V @Tjmax
 Low gate charge ID = 10A
 100% avalanche tested RDS(on) = 0.75 W(max) @ VGS= 10 V
 Improved dv/dt capability
 RoHS compliant
 Halogen free package
 JEDEC Qualification

Device Package Marking Remark

TMP10N60 / TMPF10N60 TO-220 / TO-220F TMP10N60 / TMPF10N60 RoHS
TMP10N60G / TMPF10N60G TO-220 / TO-220F TMP10N60G / TMPF10N60G Halogen Free

Absolute Maximum Ratings

Parameter Symbol TMP10N60(G) TMPF10N60(G) Unit
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ±30 V
TC = 25 ℃ 10 10* A
Continuous Drain Current ID
TC = 100 ℃ 6.5 6.5* A
Pulsed Drain Current (Note 1) IDM 40 40* A
Single Pulse Avalanche Energy (Note 2) EAS 758 mJ
Repetitive Avalanche Current (Note 1) IAR 10 A
Repetitive Avalanche Energy (Note 1) EAR 19.8 mJ
TC = 25 ℃ 198 52 W
Power Dissipation PD
Derate above 25 ℃ 1.58 0.41 W/℃
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
Operating Junction and Storage Temperature Range TJ, TSTG -55~150 ℃
Maximum lead temperature for soldering purposes,
TL 300 ℃
1/8” from case for 5 seconds
* Limited only by maximum junction temperature

Thermal Characteristics
Parameter Symbol TMP10N60(G) TMPF10N60(G) Unit
Maximum Thermal resistance, Junction-to-Case RqJC 0.63 2.4 ℃/W
Maximum Thermal resistance, Junction-to-Ambient RqJA 62.5 62.5 ℃/W

May 2010 : Rev1 www.trinnotech.com 1/5

 TMP10N60/TMPF10N60
TMP10N60G/TMPF10N60G

Electrical Characteristics : TC=25℃, unless otherwise noted

Parameter Symbol Test condition Min Typ Max Units

OFF
Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 600 -- -- V
VDS = 600 V, VGS = 0 V -- -- 1 µA
Zero Gate Voltage Drain Current IDSS
VDS = 480 V, TC = 125°C -- -- 10 µA
Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 nA
Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 nA

ON
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2 -- 4 V
Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 5 A -- 0.59 0.75 W
(Note 4)
Forward Transconductance gFS VDS = 30 V, ID = 5 A -- 9 -- S

DYNAMIC
Input Capacitance Ciss VDS = 25 V, VGS = 0 V, -- 1891 -- pF
Output Capacitance Coss f = 1.0 MHz -- 160 -- pF
Reverse Transfer Capacitance Crss -- 5.8 -- pF

SWITCHING
Turn-On Delay Time (Note 4,5) td(on) VDD = 300 V, ID = 10 A, -- 55 -- ns
(Note 4,5)
Turn-On Rise Time tr RG = 25 Ω -- 39 -- ns
(Note 4,5)
Turn-Off Delay Time td(off) -- 156 -- ns
(Note 4,5)
Turn-Off Fall Time tf -- 53 -- ns
Total Gate Charge (Note 4,5) Qg VDS = 480V, ID = 10 A, -- 36 -- nC
Gate-Source Charge (Note 4,5) Qgs VGS = 10 V -- 8.3 -- nC
(Note 4,5)
Gate-Drain Charge Qgd -- 8.3 -- nC

SOURCE DRAIN DIODE

Maximum Continuous Drain-Source
IS --- -- -- 10 A
Diode Forward Current
Maximum Pulsed Drain-Source
ISM --- -- -- 40 A
Diode Forward Current
Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 10 A -- -- 1.5 V
(Note 4)
Reverse Recovery Time trr VGS = 0 V, IS = 10 A -- 344 -- ns
(Note 4)
Reverse Recovery Charge Qrr dIF / dt = 100 A/µs -- 3.6 -- µC

Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=13.9mH, I AS = 10A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃
3 I SD ≤ 10A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

May 2010 : Rev1 www.trinnotech.com 2/5

 TMP10N60/TMPF10N60
TMP10N60G/TMPF10N60G

35
VDS = 30V
Top VGS=15.0V 250 μ s Pulse Test
30 10.0V
8.0V
7.0V 10
25 6.5V
150℃

Drain Current, ID [A]

Drain Current, ID [A]

6.0V
Bottom 5.0V
20
25℃
15
1 -55℃

10

5
1. TC = 25℃
2. 250μ s Pulse Test
0 0.1
0 10 20 30 40 50
2 4 6 8 10
Drain-Source Voltage, VDS [V] Gate-Source Voltage, VGS [V]

2.0 30
VGS = 0V
TJ = 25℃
250μ s Pulse Test
Reverse Drain Current, IDR [A]

25
Drain-Source On-Resistance

1.5

VGS = 10V 20
RDS(ON) [Ω ]

1.0 15
VGS = 20V 150℃
25℃
10
0.5

0.0
0 5 10 15 20 25 30 35 40 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Drain Current,ID [A] Source-Drain Voltage, VSD [V]

3500 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
ID = 10A VDS = 120V
3000 Crss = Cgd 10
Gate-Source Voltage, VGS [V]

VGS = 0 V
VDS = 300V
2500 f = 1 MHz
8
Capacitance [pF]

Ciss
2000 VDS = 480V
6

1500
Coss
4
1000

2
500 Crss

0 0
-1 0 1 0 5 10 15 20 25 30 35 40 45
10 10 10

Drain-Source Voltage, VDS [V] Total Gate Charge, QG [nC]

May 2010 : Rev1 www.trinnotech.com 3/5

 TMP10N60/TMPF10N60
TMP10N60G/TMPF10N60G

1.20 3.0
Drain-Source Breakdown Voltage

VGS = 10 V
VGS = 0 V
1.15 ID = 5 A
ID = 250 μ A 2.5

Drain-Source On-Resistance
1.10
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0
1.05

1.00 1.5

0.95
1.0
0.90

0.85 0.5

0.80
-80 -40 0 40 80 120 160 0.0
-80 -40 0 40 80 120 160
o
Junction Temperature,TJ [ C] Junction Temperature, TJ [ C]
o

12

10
Drain Current, ID [A]

0
25 50 75 100 125 150

Case Temperature, TC [℃]

TMP10N60(G) TMPF10N60(G)
Operation in This Area Operation in This Area
2
10
2
is Limited by R DS(on) 10 is Limited by R DS(on)
10 us
10 us
100 us
1 ms 100 us
Drain Current, ID [A]
Drain Current, ID [A]

1 10 ms 10
1
1 ms
10
100 ms
10 ms
DC
100 ms
0 DC
10
0 10

o
o
TC = 25 C TC = 25 C
-1 o
10
-1
TJ = 150 C
o
10 TJ = 150 C
Single Pulse Single Pulse

-2
10
-2 10
0 1 2 3
10
0 1
10
2
10 10
3 10 10 10 10

Drain-Source Voltage, VDS [V] Drain-Source Voltage, VDS [V]

May 2010 : Rev1 www.trinnotech.com 4/5

 TMP10N60/TMPF10N60
TMP10N60G/TMPF10N60G

TMP10N60(G)
0
10

Duty=0.5
Transient thermal impedance

0.2
-1
10
0.1

0.05
ZthJC(t)

PDM
t
0.02
T
0.01
single pulse Duty = t/T
-2
10 ZthJC(t) = 0.63 ℃/W Max.

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

Pulse Width, t [sec]

TMPF10N60(G)

Duty=0.5
0
10
Transient thermal impedance

0.2

0.1

0.05
ZthJC(t)

-1
10 PDM
0.02 t

0.01 T

Duty = t/T
single pulse ZthJC(t) = 2.4 ℃/W Max.
-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

Pulse Width, t [sec]

May 2010 : Rev1 www.trinnotech.com 5/5