TIP110, TIP111, TIP112

(NPN); TIP115, TIP116,

TIP117 (PNP)

Plastic Medium-Power
Complementary Silicon
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Transistors
Designed for general−purpose amplifier and low−speed switching DARLINGTON
applications. 2 AMPERE
Features COMPLEMENTARY SILICON
• High DC Current Gain − POWER TRANSISTORS
hFE = 2500 (Typ) @ IC 60−80−100 VOLTS, 50 WATTS
= 1.0 Adc
• Collector−Emitter Sustaining Voltage − @ 30 mAdc MARKING
VCEO(sus) = 60 Vdc (Min) − TIP110, TIP115 DIAGRAM
= 80 Vdc (Min) − TIP111, TIP116
= 100 Vdc (Min) − TIP112, TIP117 4
• Low Collector−Emitter Saturation Voltage − TO−220AB
VCE(sat) = 2.5 Vdc (Max) @ IC CASE 221A TIP11xG
= 2.0 Adc STYLE 1 AYWW
• Monolithic Construction with Built−in Base−Emitter Shunt Resistors STYLE 1:

• Pb−Free Packages are Available* 1

2
PIN 1.
2.
BASE
COLLECTOR
3 3. EMITTER
4. COLLECTOR

TIP11x = Device Code

x = 0, 1, 2, 5, 6, or 7
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

November, 2014 − Rev. 8 TIP110/D
 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

MAXIMUM RATINGS
TIP110, TIP111, TIP112,
Rating Symbol TIP115 TIP116 TIP117 Unit
Collector−Emitter Voltage VCEO 60 80 100 Vdc
Collector−Base Voltage VCB 60 80 100 Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current − Continuous IC 2.0 Adc
− Peak 4.0
Base Current IB 50 mAdc
Total Power Dissipation @ TC = 25°C PD 50 W
Derate above 25°C 0.4 W/°C
Total Power Dissipation @ TA = 25°C PD 2.0 W
Derate above 25°C 0.016 W/°C
Unclamped Inductive Load Energy − Figure 13 E 25 mJ
Operating and Storage Junction TJ, Tstg –65 to +150 °C

THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 2.5 °C/W
Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1) VCEO(sus) Vdc
(IC = 30 mAdc, IB = 0) TIP110, TIP115 60 −
TIP111, TIP116 80 −
TIP112, TIP117 100 −
Collector Cutoff Current ICEO mAdc
(VCE = 30 Vdc, IB = 0) TIP110, TIP115 − 2.0
(VCE = 40 Vdc, IB = 0) TIP111, TIP116 − 2.0
(VCE = 50 Vdc, IB = 0) TIP112 ,TIP117 − 2.0
Collector Cutoff Current ICBO mAdc
(VCB = 60 Vdc, IE = 0) TIP110, TIP115 − 1.0
(VCB = 80 Vdc, IE = 0) TIP111, TIP116 − 1.0
(VCB = 100 Vdc, IE = 0) TIP112, TIP117 − 1.0
Emitter Cutoff Current IEBO − 2.0 mAdc
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain hFE −
(IC = 1.0 Adc, VCE = 4.0 Vdc) 1000 −
(IC = 2.0 Adc, VCE = 4.0 Vdc) 500 −
Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) VCE(sat) − 2.5 Vdc
Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.8 Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) hfe 25 − −
Output Capacitance Cob pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP115, TIP116, TIP117 − 200
TIP110, TIP111, TIP112 − 100
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

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 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

COLLECTOR COLLECTOR

BASE BASE

≈ 8.0 k ≈ 120 ≈ 8.0 k ≈ 120

EMITTER EMITTER

Figure 1. Darlington Circuit Schematic

ORDERING INFORMATION
Device Package Shipping
TIP110 TO−220 50 Units / Rail
TIP110G TO−220 50 Units / Rail
(Pb−Free)

TIP111 TO−220 50 Units / Rail

TIP111G TO−220 50 Units / Rail
(Pb−Free)

TIP112 TO−220 50 Units / Rail

TIP112G TO−220 50 Units / Rail
(Pb−Free)

TIP115 TO−220 50 Units / Rail

TIP115G TO−220 50 Units / Rail
(Pb−Free)

TIP116 TO−220 50 Units / Rail

TIP116G TO−220 50 Units / Rail
(Pb−Free)

TIP117 TO−220 50 Units / Rail

TIP117G TO−220 50 Units / Rail
(Pb−Free)

TA TC
PD, POWER DISSIPATION (WATTS)

3.0 60

2.0 40

TC
1.0 20
TA

0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)

Figure 2. Power Derating

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 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

4.0
VCC VCC = 30 V IB1 = IB2
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS -30 V ts IC/IB = 250 TJ = 25°C
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA RC
2.0
MSD6100 USED BELOW IB ≈ 100 mA SCOPE
TUT

t, TIME (s)
V2 RB tf

μ
approx 1.0
+8.0 V 0.8
D1 ≈ 8.0 k tr
51 ≈ 60
0 0.6
V1
approx +4.0 V 0.4
-12 V 25 ms for td and tr, D1 is disconnected td @ VBE(off) = 0
and V2 = 0, RB and RC are varied PNP
tr, tf ≤ 10 ns to obtain desired test currents. NPN
DUTY CYCLE = 1.0% 0.2
For NPN test circuit, reverse diode, 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
polarities and input pulses.
IC, COLLECTOR CURRENT (AMP)

Figure 3. Switching Times Test Circuit Figure 4. Switching Times

1.0
r(t), TRANSIENT THERMAL RESISTANCE

0.7
D = 0.5
0.5

0.3
(NORMALIZED)

0.2
0.2
0.1
0.1 P(pk)
ZqJC(t) = r(t) RqJC
0.07 0.05 RqJC = 2.5°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02 PULSE TRAIN SHOWN
0.03 t1
READ TIME AT t1 t2
0.02
0.01 TJ(pk) - TC = P(pk) ZqJC(t) DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 5. Thermal Response

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 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

ACTIVE−REGION SAFE−OPERATING AREA

10 10
IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

4.0 4.0
1ms
2.0 5ms 2.0
TJ = 150°C dc TJ = 150°C dc
1.0 BONDING WIRE LIMITED 1.0 BONDING WIRE LIMITED
THERMALLY LIMITED THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE) @ TC = 25°C (SINGLE PULSE)
SECONDARY BREAKDOWN LIMITED SECONDARY BREAKDOWN LIMITED

CURVES APPLY BELOW TIP115 CURVES APPLY BELOW TIP110

TIP116 RATED VCEO TIP111
RATED VCEO
TIP117 TIP112
0.1 0.1
1.0 10 40 60 80 100 1.0 10 60 80 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 6. TIP115, 116, 117 Figure 7. TIP110, 111, 112

There are two limitations on the power handling ability of 200

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE TC = 25°C
100
limits of the transistor that must be observed for reliable
C, CAPACITANCE (pF)

operation; i.e., the transistor must not be subjected to greater 70

dissipation than the curves indicate.
50
The data of Figures 6 and 7 is based on TJ(pk) = 150°C;
Cob
TC is variable depending on conditions. Second breakdown
30
pulse limits are valid for duty cycles to 10% provided TJ(pk) Cib
< 150°C. TJ(pk) may be calculated from the data in Figure 5. 20
At high case temperatures, thermal limitations will reduce PNP
the power that can be handled to values less than the NPN
limitations imposed by second breakdown. 10
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40
VR, REVERSE VOLTAGE (VOLTS)

Figure 8. Capacitance

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5
 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

NPN PNP
TIP110, 111, 112 TIP115, 116, 117
6.0 k 6.0 k
TJ = 125°C VCE = 3.0 V VCE = 3.0 V
4.0 k 4.0 k TJ = 125°C
3.0 k 3.0 k
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

25°C
2.0 k 25°C 2.0 k

-55°C
-55°C
1.0 k 1.0 k
800 800
600 600

400 400
300 300
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

3.4 3.4
TJ = 25°C TJ = 25°C
IC =
3.0 3.0
0.5 A
1.0 A 2.0 A 4.0 A IC =
2.6 2.6 0.5 A 1.0 A 2.0 A 4.0 A

2.2 2.2

1.8 1.8

1.4 1.4

1.0 1.0

0.6 0.6
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region

2.2 2.2
TJ = 25°C TJ = 25°C
1.8 1.8
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 250

1.4 VBE(sat) @ IC/IB = 250 1.4 VBE @ VCE = 3.0 V
VBE @ VCE = 3.0 V

1.0 1.0
VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250

0.6 0.6

0.2 0.2
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages

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 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

NPN PNP
TIP110, 111, 112 TIP115, 116, 117
+0.8 +0.8
θV, TEMPERATURE COEFFICIENTS (mV/°C)

θV, TEMPERATURE COEFFICIENTS (mV/°C)

*APPLIES FOR IC/IB ≤ hFE/3 *APPLIES FOR IC/IB ≤ hFE/3
0 0

-0.8 -0.8 25°C to 150°C

-1.6 25°C to 150°C -1.6 *qVC for VCE(sat)

-2.4 *qVC for VCE(sat) -55°C to 25°C

-2.4
-55°C to 25°C
-3.2 25°C to 150°C -3.2 25°C to 150°C
qVC for VBE
-55°C to 25°C qVC for VBE -55°C to 25°C
-4.0 -4.0

-4.8 -4.8
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 12. Temperature Coefficients

105 105
REVERSE FORWARD REVERSE FORWARD
104 104
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

μ

103 103 VCE = 30 V

VCE = 30 V

102 102
TJ = 150°C
TJ = 150°C
101 101
100°C
100 100°C 100
25°C 25°C
10-1 10-1
-0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 +1.4 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 +1.4
VBE, BASE‐EMITTER VOLTAGE (VOLTS) VBE, BASE‐EMITTER VOLTAGE (VOLTS)

Figure 13. Collector Cut-Off Region

TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS

tw ≈ 3.5 ms (SEE NOTE A)

VCE MONITOR
0V
INPUT
VOLTAGE
MJE254 RBB1 100 mH -5 V
INPUT TUT 100 ms
2kW +
VCC = 20 V 0.71 A
50 W - COLLECTOR
RBB2 IC
50 W CURRENT
100 W MONITOR 0V
VBB1 = 10 V + RS = VCER
VBB2 = 0 0.1 W
- COLLECTOR
VOLTAGE
20 V
VCE(sat)
Note A: Input pulse width is increased until ICM = 0.71 A,
NPN test shown; for PNP test
reverse all polarity and use MJE224 driver.

Figure 14. Inductive Load Switching

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 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T S
ALLOWED.

INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
1 2 3 U D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.024 0.36 0.61
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
D V
Z
0.045
---
---
0.080
1.15
---
---
2.04
N STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

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