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by 2N6274/D
SEMICONDUCTOR TECHNICAL DATA

 

    
  
. . . designed for use in industrial–military power amplifer and switching circuit
*Motorola Preferred Device
applications.
• High Collector Emitter Sustaining —
50 AMPERE
VCEO(sus) = 100 Vdc (Min) — 2N6274
POWER TRANSISTORS
VCEO(sus) = 120 Vdc (Min) — 2N6275
NPN SILICON
VCEO(sus) = 150 Vdc (Min) — 2N6277
100, 120, 140, 150 VOLTS
• High DC Current Gain —
250 WATTS
hFE = 30–120 @ IC = 20 Adc
hFE = 10 (Min) @ IC = 50 Adc
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc
• Fast Switching Times @ IC 20 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr = 0.35 µs (Max)
ts = 0.8 µs (Max)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tf = 0.25 µs (Max)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• Complement to 2N6377–79 CASE 197A–05

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
TO–204AE
MAXIMUM RATINGS(1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(TO–3)
Rating Symbol 2N6274 2N6275 2N6277 Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage VCB 120 140 180 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage VCEO 100 120 150 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage VEB 6.0 Vdc
Collector Current — Continuous IC 50 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Peak 100

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current IB 20 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25_C PD 250 Watts
Derate above 25_C 1.43 W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction TJ, Tstg – 65 to + 200 _C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ
Temperature Range

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTIC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case θJC 0.7 _C/W
(1) Indicates JEDEC Registered Data.
250
PD, POWER DISSIPATION (WATTS)

200

150

100

50

0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7

 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
  

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1) VCEO(sus) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
IC = 50 mAdc, IB = 0) 2N6274 100 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
2N6275 120 —
2N6277 150 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEO µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 50 Vdc, IB = 0) 2N6274 — 50

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 60 Vdc, IB = 0) 2N6275 — 50
(VCE = 75 Vdc, IB = 0) 2N6277 — 50

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEX

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ µAdc
(VCE = Rated VCB, VEB(off) = 1.5 Vdc) — 10
(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
— 1.0 mAdc
µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0) IEBO — 100

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)
DC Current Gain hFE —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
IC = 1.0 Adc, VCE = 4.0 Vdc) 50 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
IC = 20 Adc, VCE = 4.0 Vdc) 30 120
IC = 50 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
10 —
Coliector–Emitter Saturation Voltage VCE (sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
IC = 20 Adc, IB = 2.0 Adc) — 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
IC = 50 Adc, IB = 10 Adc) — 3.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter Saturation Voltage VBE(sat) Vdc
IC = 20 Adc, IB = 2.0 Adc) — 1.8

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
IC = 50 Adc, IB = 10 Adc) — 3.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage (IC = 20 Adc, VCE = 4.0 Vdc) VBE(on) — 1.8 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz) fT 30 — MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob — 600 pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS
µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rise Time tr — 0.35
(VCC = 80 Vdc, IC = 20 Adc, IB1 = 2.0 Adc, VBE(off) = 5.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Storage Time ts — 0.80 µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCC = 80 Vdc, IC = 20 Adc, IB1 = IB2 = 2.0 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Fall Time tf — 0.25 µs
(VCC = 80 Vdc, IC = 20 Adc, IB1 = IB2 = 2.0 Adc)
* Indicates JEDEC Registered Data.
v v
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
(2) fT = |hfe| • ftest

VCC 2.0
+ 80 V
IC/IB = 10
RC 1.0 TJ = 25°C
30 µs 4.0 OHMS 0.7
RB td @ VBE(off) = 5.0 V
0.5
+ 21.5 V 10 OHMS
t, TIME ( µs)

0.3
0
0.2
– 18.5 V 1N3879
0.1
tr, tf ≤ 10 ns tr @ VCC = 80 V
DUTY CYCLE = 0.5% 0.07
– 4.0 V 0.05
0.03
NOTE: For information of Figures 3 and 6 , RB and RC were 0.02
NOTE: varied to obtain desired test conditions. 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Test Circuit Figure 3. Turn–On Time

2 Motorola Bipolar Power Transistor Device Data

   
1.0

r(t), EFFECTIVE TRANSIENT THERMAL

0.7 D = 0.5
0.5
RESISTANCE (NORMALIZED)
0.3 0.2
0.2
0.1
0.1 0.05 θJC(t) = r(t) θJC P(pk)
0.07 0.02 θJC = 0.7°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.01 PULSE TRAIN SHOWN
0.03 t1
SINGLE PULSE READ TIME AT t1 t2
0.02 TJ(pk) – TC = P(pk) θJC(t)
DUTY CYCLE, D = t1/t2
0.01
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000
t, TIME (ms)

Figure 4. Thermal Response

100
50 There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
IC, COLLECTOR CURRENT (AMP)

20 TJ = 200°C dc 5.0 ms 100 µs

1.0 ms down. Safe operating area curves indicate IC – VCE limits of
10
the transistor that must be observed for reliable operation;
5.0
i.e., the transistor must not be subjected to greater dissipa-
2.0 tion than the curves indicate.
1.0 The data of Figure 5 is based on TJ(pk) = 200_C; TC is
0.5 SECOND BREAKDOWN LIMITED variable depending on conditions. Second breakdown pulse
0.2 BONDING WIRE LIMITED limits are valid for duty cycles to 10% provided T J(pk)
0.1
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE) 2N6274
v 200_C. TJ(pk) may be calculated from the data in Fig-
0.05 ure 4. At high case temperatures, thermal limitations will
0.02 CURVES APPLY BELOW 2N6275
reduce the power that can be handled to values less than the
RATED V(BR)CEO 2N6277
0.01 limitations imposed by second breakdown.
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Active–Region Safe Operating Area

5.0 10,000
3.0 IB1 = IB2 7000 TJ = 25°C
ts 5000
2.0 IC/IB = 10
TJ = 25°C 3000 Cib
C, CAPACITANCE (pF)

1.0 2000
t, TIME ( µs)

0.7
0.5 1000
0.3 tf @ VCC = 80 V 700
500
0.2
300 Cob

0.1 200
0.07
0.05 100
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Turn–Off Time Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data 3

  

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1000 4.0
700 VCE = 4.0 V TJ = 25°C
3.6 IC = 5.0 A 10 A 30 A
500 VCE = 10 V
3.2 2.0 A
hFE, DC CURRENT GAIN

300
TJ = 150°C 2.8
200
2.4
100 + 25°C
2.0
70 – 55°C 1.6
50
1.2
30
0.8
20
0.4
10 0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (AMPS)

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

2.8 + 12
+ 4.0 V

θV, TEMPERATURE COEFFICIENTS (mV/°C)

TJ = 25°C hFE @ VCE
2.4 + 10 *APPLIES FOR IC/IB <
4
2.0
V, VOLTAGE (VOLTS)

+ 8.0
– 55°C TO + 25°C
1.6 + 6.0 + 25°C TO + 150°C

1.2 + 4.0
VBE(sat) @ IC/IB = 10
0.8 + 2.0
VBE(sat) @ IC/IB = 4.0 V VCE(sat) *θVC for VCE(sat)
0.4 @ IC/IB = 10 0
θVB for VBE
0 – 2.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages Figure 11. Temperature Coefficients

103 102
TJ = 150°C VCE = 100 V
IC, COLLECTOR CURRENT (AMPS)

TJ = 150°C VCE = 100 V

102 101
IB , BASE CURRENT ( µA)

100°C 100°C
101 100
25°C
100 10–1
IC = ICES
25°C
10–1 10– 2
REVERSE FORWARD
REVERSE FORWARD
10– 2 10–3
– 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 – 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4
VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 12. Collector Cut–Off Region Figure 13. Base Cut–off Region

4 Motorola Bipolar Power Transistor Device Data

   
PACKAGE DIMENSIONS

A
N
C NOTES:
–T– SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
PLANE
E Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D 2 PL K
INCHES MILLIMETERS
0.30 (0.012) M T Q M Y M DIM MIN MAX MIN MAX
A 1.530 REF 38.86 REF
U B 0.990 1.050 25.15 26.67
L –Y–
V C 0.250 0.335 6.35 8.51
D 0.057 0.063 1.45 1.60
2 E 0.060 0.070 1.53 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
–Q– N 0.760 0.830 19.31 21.08
Q 0.151 0.165 3.84 4.19
0.25 (0.010) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

CASE 197A–05
TO–204AE
ISSUE J

Motorola Bipolar Power Transistor Device Data 5

  

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
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6 Motorola Bipolar Power Transistor Device Data

*2N6274/D*
◊ 2N6274/D