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where Vds and Vqs are the machine d and q axis voltages
10-4 (in the rotor reference frame), and α is selected to avoid
8
the need for field weakening. In the considered permanent-
7 magnet synchronous machine, α is taken to be 3. At the low
voltage conversion ratio of the boost converter, the maximum
6 deliverable power is proportional to the motor speed. The
typical EV powertrain load causes the boost capacitor RMS
5
current magnitude to be proportional to the voltage conversion
4
ratio. The resulting peak output capacitor RMS current and
peak output power of the boost converter versus motor speed
3 (RPM) at 250 V battery voltage are shown in Fig. 3. The
peak RMS current is observed at high battery-to-bus voltage
2 conversion ratio. Assuming that a conventional boost converter
is designed to meet the specifications shown in Figs. 2 and
1 RMS[A]/Vol[mm3 ]
3, the voltage rating of the output capacitor must be higher
C[uF]/Vol[mm3 ]
0 than the maximum DC bus voltage (800 V), and the capacitor
300 400 500 600 700 800 900 RMS current rating must be higher than the peak RMS current
Vrating [V]
(64 A).
Fig. 1. Capacitor RMS current rating per volume and capacitance per volume With the composite boost converter architecture shown in
as functions of voltage rating Fig. 4 [1], the capacitor RMS current and voltage ratings are
reduced. The composite boost converter architecture consists
The boost converter employed in EV or HEV powertrain of three dissimilar converter modules, buck, boost, and dual
is required to operate over wide range of power and voltage active bridge (DAB) operated as DC transformer (DCX). Since
conversion ratio. However, the rated power is delivered to the the output voltage of boost module employed in composite
load at high motor speeds. Based on the assumption that a boost converter is operated within 400 V and the boost mod-
250 V battery is employed and that the maximum inverter ule processes partial system power, voltage rating and peak
DC bus voltage is 800 V, the motor torque, load power and capacitor RMS current are reduced. Based on the RMS current
required DC bus voltage for the inverter as functions of motor capability per volume as a function of voltage rating shown in
speed are shown in Fig. 2 for the 30 kW rated EV powertrain Fig. 1, the volume reduction in the output capacitor is 41%,
135
80 tional, and Si-IGBT conventional boost converters at 250 Vin ,
650 Vbus is shown in Fig. 5. Compared to the Si-IGBT
70
conventional boost converter, the SiC-MOSFET conventional
60 boost converter achieves a reduction in losses over a wide
range of operating points, particularly at low power. The
50 resulting magnetic volume is reduced by 60%. Nevertheless,
40
100
30
99
20
98
10 97
Capacitor RMS current [A]
Power [kW]
Efficiency [%]
0 96
300 400 500 600 700 800
Vbus [V] 95
94
Fig. 3. Peak RMS current of output capacitor employed in boost converter
and load power as functions of output voltage in a 30 kW EV powertrain 93
136
99
98.8
• The switching loss is negligible when the switching
device is operated under zero-voltage switching (ZVS). 98.6
Efficiency [%]
98.2
Based on the PWL switching loss model, instantaneous loss
in each switching interval is calculated and average switching 98
loss over one switching period is estimated. Also, the SiC-
97.8
MOSFET conduction losses can be found as
Pconduction = RDS IRMS 2 (2) 97.6
97.4
where RDS is the MOSFET on-state resistance and IRMS is Measured efficiency
Loss model
the RMS current flowing through the MOSFET. To verify the 97.2
1 2 3 4 5 6 7 8 9 10
semiconductor loss model, a prototype board configured as a Power [kW]
boost converter is fabricated using 900V/10mΩ SiC-MOSFET
[8] packaged in HT-4000 module [9], as shown in Fig. 6. Fig. 7. Efficiency as a function of output power based on the SiC-MOSFET
Comparisons of measured efficiencies and the efficiencies boost module loss model (red dashed line) and experimental results (black
dots) at 200Vin and 208Vout
99
98.8
98.6
Efficiency [%]
98.4
98.2
98
Fig. 6. Photograph of the Wolfspeed HT-4000 SiC-MOSFET full bridge
module
97.8
Measured efficiency
based on the switching loss model are shown in Figs. 7 and 8 Loss model
97.6
at the operating points 200Vin /209Vout and 300Vin /313Vout at 2 4 6 8 10 12 14 16
Power [kW]
200 kHz switching frequency. Under the voltage conversion
ratio close to unity, the switching loss dominates the converter
loss, while magnetic loss is negligible and conduction loss can Fig. 8. Modeled (red dashed line) and measured (black dots) efficiency as
functions of output power for the SiC-MOSFET boost module at 300Vin and
be easily predicted. The developed loss model shows good 313Vout
agreement with the measured data over wide ranges of power
and voltage.
B. Magnetic loss model
The magnetic loss model consists of dc and ac winding and efficiency predicted based on the loss model is shown in
losses, and core loss. Core loss is calculated according to the Fig. 9 at four different operating conditions, 100Vin /146Vout ,
iGSE method [10]. AC winding losses are calculated using a 150Vin /220Vout , 200Vin /294Vout , and 250Vin /368Vout . The mag-
2D FEM tool, FEMM [11]. The magnetic loss is measured netic loss model shows good agreement with the measured
in the prototype converter configured as a boost converter data.
operated at 240 kHz switching frequency, and high voltage
conversion ratio under light load. Under these light-load op- IV. Design of SiC-MOSFET composite boost converter
erating conditions, conduction losses are very low, and power Based on the loss model discussed in Section III, the
semiconductors are zero-voltage switching so that switching composite boost converter is designed to demonstrate high
losses are negligible. As a result, magnetic losses dominates volumetric and gravimetric power density, and high average
the total converter losses. A comparison of measured efficiency efficiency. The converter specifications are listed in Table I.
137
100
100Vin / 146Vout
99 150Vin / 220Vout
200Vin / 294Vout
98 250Vin / 368Vout
97
Efficiency [%]
96
95
94
93
92
91
90
0 0.5 1 1.5 2 2.5
Power [kW]
Fig. 10. US06 driving cycle density plot of operating points [5]
Fig. 9. Efficiency calculated based on the magnetic loss model and measured
efficiency as functions of output power for the boost module operated at
100Vin /146Vout , 150Vin /220Vout , 200Vin /294Vout , and 250Vin /368Vout . At the
considered low-power, zero-voltage-switching operating points, semiconduc-
tor losses are negligible. capacitor volume is reduced by 17% and the magnetic volume
is reduced by 25%, compared to a non-interleaved design. The
TABLE I optimization results are listed in Table II.
SiC-MOSFET Composite Boost Converter Specifications
138
V. Experimental results
Based on the converter optimization summarized in Sec-
is operated in the pass-through mode. As a result, the switching
tion IV, the SiC-MOSFET composite boost converter shown
loss and magnetic loss of the buck module are eliminated.
in Fig. 11 has been fabricated and tested. The prototype board
consists of driver board, power board, SiC-MOSFET mod-
ule, cold-plate, capacitors, and magnetics. The 3-dimensional
Vsw(dcx/sec)
exploded view of SiC-MOSFET composite boost converter
is shown in Fig. 12. To reduce resistive PCB trace losses, Vsw(dcx/pri)
Itx(dcx/pri)
the power board utilizes heavy copper traces, while standard
copper traces are employed on the driver board to allow small
monolithic IC components.
Itx(dcx/sec)
Vsw(boost)
IL(boost)
Vsw(buck)
IL(buck)
Fig. 11. SiC-MOSFET composite boost converter prototype board. Top view
(left), bottom view (right)
Fig. 13. DAB primary and secondary switching node voltages and transformer
primary and secondary currents, and boost and buck switching node voltages
and inductor currents at 250Vin /650Vbus at 50 W
139
100
Vsw(dcx/pri)
95
Vsw(dcx/sec)
Itx(dcx/pri) 90
Efficiency [%]
Itx(dcx/sec) 85
80
75
Vsw(boost)
70 Comprehensive loss model
Conventional Si-IGBT boost
IL(boost) Measured effciency
65
Vsw(buck) 0 2 4 6 8 10 12
Power [kW]
IL(buck) Fig. 15. Efficiency predicted based on the loss model, measured efficiency of
SiC-MOSFET composite boost converter, and efficiency of the conventional
Si-IGBT boost converter
Vsw(boost-1)
MOSFET, and composite boost converter with Si-MOSFET
IL(boost-1) [5] or SiC-MOSFET are listed in Table V. A higher converter
Vsw(boost-2) quality factor Q means that a higher output power can be
achieved under the same cooling capacity, or that a reductions
in cooling capacity and associated costs can be achieved
IL(boost-2)
without degradation of the output power rating. Compared to
the conventional Si-IGBT or SiC-MOSFET boost converter,
the composite boost converters using Si-MOSFET or SiC-
MOSFET exhibit improvements in average efficiencies on EPA
Fig. 14. DAB primary and secondary switching node voltages and transformer
primary and secondary currents, boost and buck switching node voltages standard driving cycles. Furthermore, a substantial reduction
and inductor currents, and interleaved boost module 1 and boost module 2 in magnetic volume is demonstrated with the SiC-MOSFET
switching node voltages and inductor currents at 250Vin /650Vbus , 12 kW composite boost converter.
VI. Conclusions
This paper is focused on the design of a SiC-MOSFET
TABLE IV composite boost converter with high power density and high
Operating conditions and estimated losses of individual module, and
resulting efficiency of composite boost converter and conventional boost average efficiency. The SiC composite boost converter achieves
converter [2] 22 kW/L volumetric power density, as well as 97.5% average
efficiency on the US06 driving cycle, as well as 97.8% CAFE
250Vin /650Vbus 250Vin /650Vbus averaged efficiency. Relative to the conventional 5.7 kW/L
Operating point
50 W 12 kW
Si-IGBT converter, magnetics volume is reduced by 76%,
Boost operating condition 250Vin /275Vout /21W 250Vin /275Vout /5kW power density is improved by 280%, and CAFE average loss
Boost loss 11W 94W
Buck operating condition 250Vin /250Vout /29W 250Vin /250Vout /7kW is reduced by 60%. Also, CAFE average loss reduction by
Buck loss 0W 5W a factor of 1.8 is achieved, compared to the CAFE average
DAB operating condition 250Vin /375Vout /29W 250Vin /375Vout /7kW loss of SiC-MOSFET conventional boost converter. A com-
DCX loss 18W 111W
prehensive loss model is used in the design optimization. The
Net loss 29W 210W loss model is experimentally verified on a prototype SiC-
Estimated efficiency 63.3% 98.2%
Measured efficiency 66.2% 97.3% MOSFET boost module. A weighted loss method is employed
Conv. boost op. 250Vin /650Vbus /50W 250Vin /650Vbus /12kW
to optimize the SiC composite boost on US06 driving cycle,
Conv. boost loss 337W 463W which leads to a predicted 39 kW peak power rating in a
Conv. boost efficiency 12.9% 96.3% volume of 1.8 liters. The prototype board is fabricated and
experimental results demonstrate efficiency improvements over
wide range of power and voltage, relative to the conventional
140
TABLE V
Comparison of switching frequency, US06, CAFE average efficiency, converter quality factor (Q) and magnetic volume
Si-IGBT and SiC-MOSFET boost converters. Furthermore, it [11] Finite element method magnetics. [Online]. Available:
is shown how a reduction in loss at light load is important http://www.femm.info/wiki/HomePage
to achieve average efficiency improvements on standard EPA
driving cycles. The prototype SiC-MOSFET composite boost
converter exhibits 22 kW/L of volumetric power density and
20 kW/kg of gravimetric power density.
Acknowledgement
The information, data, or work presented herein was funded
in part by the Office of Energy Efficiency and Renewable
Energy (EERE), U.S. Department of Energy, under Award
Number DE-EE0006921.
References
[1] H. Chen, K. Sabi, H. Kim, T. Harada, R. Erickson, and D. Maksimovic,
“A 98.7% efficient composite converter architecture with application-
tailored efficiency characteristic,” Power Electronics, IEEE Transactions
on, vol. 31, no. 1, pp. 101–110, 2016.
[2] T. Burress, “Evaluation of the 2010 Toyota Prius hybrid synergy drive
system,” Oak Ridge National Laboratory (ORNL); Power Electronics
and Electric Machinery Research Facility, Technical Report ORNL/TM-
2010/253.
[3] T. Zhao, J. Wang, A. Q. Huang, and A. Agarwal, “Comparisons of
SiC-MOSFET and Si-IGBT based motor drive systems,” in Industry
Applications Conference, 2007. 42nd IAS Annual Meeting. Conference
Record of the 2007 IEEE, 2007, pp. 331–335.
[4] R. W. Erickson and D. Maksimovic, Fundamentals of Power Electronics.
Springer, 2001.
[5] H. Kim, H. Chen, D. Maksimovic, and R. Erickson, “Boost composite
converter design based on drive cycle weighted losses in electric vehicle
powertrain applications,” in Energy Conversion Congress and Exposition
(ECCE), 2016 IEEE, Sept 2016.
[6] D. Costinett, D. Maksimovic, and R. Zane, “Design and control for high
efficiency in high step-down dual active bridge converters operating at
high switching frequency,” Power Electronics, IEEE Transactions on,
vol. 28, no. 8, pp. 3931–3940, 2013.
[7] H. Kim, H. Chen, D. Maksimovic, and R. Erickson, “Design of a
high efficiency 30 kw boost composite converter,” in Energy Conversion
Congress and Exposition (ECCE), 2015 IEEE, Sept 2015, pp. 4243 –
4250.
[8] V. Pala, G. Wang, B. Hull, S. Allen, J. Casady, and J. Palmour, “Record-
low 10mΩ sic mosfets in to-247, rated at 900v,” in 2016 IEEE Applied
Power Electronics Conference and Exposition (APEC), March 2016, pp.
979–982.
[9] Z. Cole, B. McGee, J. Stabach, S. Storkov, B. Whitaker, D. Martin,
G. Falling, R. Shaw, and B. Passmore, “High temperature, wide bandgap
full-bridge power modules for high frequency applications,” in Inte-
grated Power Packaging (IWIPP), 2015 IEEE International Workshop
on, May 2015, pp. 119–122.
[10] V. Kapil, R. S. Charles, A. Tarek, and T. Hernan, “Accurate prediction
of ferrite core loss with nonsinusoidal waveforms using only steinmetz
parameters,” in Computers in Power Electronics (COMPEL), 2002.
Proceedings. 2002 IEEE Workshop on, June 2002, pp. 36–41.
141