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ABTU-EEE EEE 307-Analog Electronics

EXPERIMENT 3. SINGLE TUNED AMPLIFIERS

Introduction
In this laboratory, characteristics of single tuned amplifiers will be examined. In this type of
amplifiers, one parallel tuned circuit is used as a load. They have several limitations such as
small bandwidth, small gain bandwidth product, and do not provide flatten response. On the
other hand, their alignment is more straightforward than double tuned amplifiers.

Theory
Many communications system requirements exceed the high-frequency limits of op-amps. In
cases such as these, tuned amplifiers are often used. The basic principle underlying the
design of tuned amplifiers is the use of a parallel RLC (tank) circuit as the load, or at the input
of a BJT or FET amplifier. Single tuned amplifier investigated in this experiment is a small
signal voltage amplifier. The basic principle of single tuned amplifiers is illustrated using a BJT
with tuned-circuit loads in Figure 1.

Figure 1: A Basic BJT single tuned amplifier

A single tuned amplifier is usually consists of an amplifier and a tuning stages. In the first
stage, the input is amplified. The amplified signal may contain different frequency
components. The tuning stage is transparent to the components which has frequencies
falling in the passband of the circuit. For example, if the tuning circuit is tuned to ω 0, only the
frequency component at ω0 is reflected to the output while the others are rejected.

Consider an ideal tuning circuit shown in Figure 2.


ABTU-EEE EEE 307-Analog Electronics

Figure 2: Ideal tuning stage

If the input is

x ( t )=7 cos ( 2ω 0 t ) +5 cos ( ω0 t ) +13 cos ( 7 ω 0 t )

Then the output is y ( t )=5 A cos ( ω0 t ) , where A is a constant depending on the


component values of the tuning stage.

In a single tuned amplifier, tuning stage is a simple narrowband resonant circuit, such as the
one given in Figure 3.

Figure 3: Parallel RLC (Tank) circuit

Let Vo(s) and I(s) denote the Laplace Transforms of Vo(t) and i(t), respectively. The transfer
function H(s) can be written as
1 1
s s
V o (s) 1 C C
H ( s )= = = =
I (s) 1 1 1 1 ( s−s 1)(s−s 2)
+ + sC s 2+ s+
R sL RC LC

where


2
−1 1 1
s 1,2= ∓ ( )−
2 RC 2 RC LC

s1 and s2 are the poles of the transfer function. Zeros of the transfer function are at the
origin and at infinity. Following conventional notations are used for H(s):
ABTU-EEE EEE 307-Analog Electronics

1
α=
2 RC
1
ω 0=
√ LC
β=√ ω20−α 2

s 1,2=−α ∓ √ α 2−ω 20

Depending on the values of α and ω 0 the two poles may be either real or a complex
conjugate pair. If ω 0> α or R>ω 0 L/2 then the poles will be complex conjugate and
can be written as:
s 1,2=−α ∓ j √ω 20−α 2

The distance of the poles to the origin is ω 0 . If α is increased (R is decreased) the poles
move into the left half plane along the semicircular trajectory of radius w0 until they meet on
the real axis for α = ω 0 .

Figure 4: The position of the poles in complex plane

Sinusoidal steady state response for the tank circuit is obtained by inserting s=jw in H(s):
−1

C jω
H ( jω )= 2 2
=
( jω) + jω+ ω0 C ( ω 0−ω 2 ) + j2 αω
2

ω
¿ H ( jω )∨¿

C 4 α 2 ω2 + ( ω20−ω2 )

π −1 2 αω
∠ H ( jω )= −tan
2 ω 20−ω2
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ω 0 is the frequency at which the imaginary part of H(jw) is zero and hence it is real. At
frequency ω 0 , H(jw)=R as seen in Figure 5.

Figure 5: Amplitude of the impedance of capacitor and inductor, and the amplitude of the transfer
function

Figure 6: Phase of the transfer function

The frequencies ω1 and ω2 are the Half Power or 3 dB cut-off frequencies. The real
power dissipated by the tank circuit at ω1 and at ω2 is the half of that for ω=ω 0 .
Solving Eq. 1 for ω1 and ω2

ω1 −ω2=2 α
2
ω1 ω 2=ω 0

The tank circuit is frequency selective and this behavior can be seen in Figure 5. An ideal tank
circuit passes only the frequency components in the interval [ ω1 , ω2 ]. The sharper the
characteristics, the better the attenuation of unwanted frequency components. The quality
factor (Q) determines how good a tnak circuit is.

center frequency ω
Q= =
3 dB bandwidth 2 α

In practice, inductors and capacitors used in tank circuits have some losses. These losses
ABTU-EEE EEE 307-Analog Electronics

are represented as a series resistance for inductors and a parallel resistance for the
capacitors. Capacitor leakage may be neglected but the series loss resistance of inductors has
an equivalent parallel resistance around the resonant frequency ω 0 and it should be
taken into account, as given in Figure 7.

Figure 7: LC circuit with loss resistance

The unloaded Q of the inductor is defined as:


ω0 ω0 L L
Q= = =
2α r ω0 rC

If QL >10 then around ω 0 , the circuit in Figure 7a can be replaced by the equivalent model
in Figure 7b.

1 L
R p=Q2L r = =
(ω 0 rC )
2
rC

Overall quality factor of the tank circuit when loaded with a parallel resistor RL is:
ω0
Q r= =ω0 Req C

where Req =R p /¿ R L

Consider the following single tuned amplifier configuration given in Figure 8. We want to
obtain AC and DC load line equations of this configuration. To obtain DC load line equation
short circuit the inductor and open circuit the capacitors. Then V CE =V CC −I C (R E +r )
ABTU-EEE EEE 307-Analog Electronics

Figure 8: Tuned amplifier

To find AC load line, find the equivalent parallel resistance RP of the inductor, short circuit CS,
CL, CE and assume L and C are in resonance. Put the small signal model of the
transistor into the amplifier configuration (Figure 9).

Figure 9: Small signal model

AC load line:
I
V CEQ V CE
(¿ ¿ CQ+ )−
R ac Rac
I C =¿

where Rac =R P /¿ R L

Obviously, slope of DC load line is -1/(RE+r) while that of AC load line is -1/Rac. In general,
Rac>>RE+r, which means AC load line intersects the VCE axis at a voltage larger than VCC
(Figure 10).
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Figure 10: DC and AC load lines

Preliminary work
1. Each of the students is tested before starting experiment by research assistant. This
test may be written or oral examination. Theoretical knowledge of the experiment
that should be gotten from experimental sheet and other sources (lecture notes,
books etc.). The theoretical information about experiment is not limited to study
only experimental sheet, students have to research other sources to get enough
knowledge.
2. Students should know the purpose of the experiment. They should know how the
experiment can be done and which measuring elements can be used. They should
also get measuring elements catalog information.
3. In the following, there are two video recordings about the use of oscilloscope with
Agilent Vee.

https://drive.google.com/open?id=0B24exSh3SWAqNm9XS2NnSE92bFU
https://drive.google.com/open?id=0B24exSh3SWAqQm9wMng5eFdIZVE

Each student have to watch these videos (If necessary several times) and take some
necessary notes for working properly with agilent vee oscilloscope.
PLEASE NOTE THAT: During the lab, there WON’T be an introductory section about
how to work with agilent vee and oscilloscope.

4. The response y(t) of a linear time invariant system with a transfer function h(t) to a
sinusoidal input x(t) is given as

x ( t )= Acos(ω0 t)
y ( t )= A∨H ( j ω 0 )∨cos (ω 0 t +∠ H ( j ω0 ) )
ABTU-EEE EEE 307-Analog Electronics

Find the response of the same system to the following inputs


a. x ( t )= Acos ( ω 1 t ) + Bcos(ω 2 t)

b. x ( t )=∑ an cos( n ω0 t)
n=0
c. Discuss what would be observed at the output if the above system were a
tank circuit with center frequency ω 0 and high Q, and the input is a square
wave of frequency ω 0

5. Find the Norton equivalent of the voltage source and 100 kΩ resistor and find the
equivalent parallel resistance of the circuit given below (Figure 11). Simulate the
circuit given in Figure 11, plot the magnitude-frequency response and phase-
frequency response of the tank circuit on the scale for requencies from f 0-5 kHz up to
f0+5 kHz in 100 Hz steps by assuming that the impedance of the loaded tank circuit is
much smaller than the parallel resistor of the Norton current source. Find f 0, Q, and
the bandwidth. Comment on the results.

Figure 11: Tuned circuit

6. For the circuit given in Figure 12


a. Calculate ICQ, VCQ, and VCEQ. Draw the DC load line.
b. Draw the small signal model. Draw the AC load line.
c. Calculate ω 0 , f0, QT, and bandwidth.
d. Find the gain of the circuit at the resonant frequency, and calculate V o(t) for
Vin(t)=0.001cos( ω 0 t).
ABTU-EEE EEE 307-Analog Electronics

Figure 12: Tuned amplifier

Experiment
1. Construct the circuit of Figure 11. Set the input to 200 mV peak-to-peak.
a. Find the center frequency f0
b. Find and plot magnitude- and phase-frequency responses in steps of 100 Hz
beginning from f0-5 kHz up to f0+5 kHz by using VEE program you designed in
the preliminary work.

2. Construct the circuit given in Figure 12 with a BD 135 transistor. Measure I CQ, VCQ, and
VCEQ. Apply a sine wave of 200 mV peak-to-peak and then change the input level to
have a maximum output peak-to-peak swing at the center frequency.
a. Calculate the magnitude-frequency response.
b. Calculate half-power frequencies and the values of the magnitude-frequency
response at these frequencies.

c. Plot the magnitude- and phase-frequency responses using the VEE program
you designed. To plot ∠H(jw) you should use the oscillioscope. Both of the
signals should be seen clearly at the screen of the scope (there should be no
clipping). The program will measure the phase difference between the two
signals. Compare the values calculated in a and b with the values you
observed from the plot.

3. Using the same circuit as in the previous step,


ABTU-EEE EEE 307-Analog Electronics

a. Apply a square wave at resonance frequency to the input. You should observe
a signal very close to a sine wave. Why? Adjust the input level such that the
output has a maximum peak to peak swing. Observe the emitter and collector
voltages.
a. Decrease the square wave at resonance frequency towards f 0/2 and see how
the output voltage waveform changes. Adjust the input frequency around f 0/2
to obtain the maximum undistorted swing at the output. Observe the emitter
and collector voltages. Comment on what you have observed.

SINGLE TUNED AMPLIFIERS

NAMES: 1.

2.

SECTION:

1.
f0=
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Comment:

2.

ICQ= VCQ= VCEQ=

a) |H(jw0)|=
ABTU-EEE EEE 307-Analog Electronics

b) |H(jw1)|= |H(jw2)|=
ang H(jw1) ang H(jw2)
c)

Comment:
ABTU-EEE EEE 307-Analog Electronics

3.

a)

b)
ABTU-EEE EEE 307-Analog Electronics

Comment:

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