2SC4706

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO 900 V ICBO VCB=800V 100max 9.6 2.0±0.1

VCEO 600 V IEBO VEB=7V 100max µA

VEBO 7 V V(BR)CEO IC=10mA 600min V

19.9±0.3

4.0
a
IC 14(Pulse28) A hFE VCE=4V, IC=7A 10 to 25 ø3.2±0.1
b
IB 7 A VCE(sat) IC=7A, IB=1.4A 0.5max V
PC 130(Tc=25°C) W VBE(sat) IC=7A, IB=1.4A 1.2max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–1.5A 6typ MHz 3
Tstg –55to+150 °C COB VCB=10V, f=1MHz 160typ pF 1.05 +0.2
-0.1 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 1.4

B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
250 35.7 7 10 –5 1.05 –3.5 1max 5max 0.7max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(V CE =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

14 2 14
6 A 1.2 A I C /I B =5 Const.
1.
Base-Emitter Saturation Voltage V B E (s at) (V)

12 12

Collector Current I C (A)

800mA
Collector Current I C (A)

10 10
600mA

8 8
400m A

)
1

emp

mp)

)
Temp
6 6

eT

e Te
V B E (sat)

Cas

(Case
(Cas
200mA

˚C (
4 4

25˚C
125

–55˚C
I B =100mA
2 2

V C E (sat)
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Temperature Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

(V C E =4V)
50 8
t o n• t s t g• t f (µ s)

125˚C 5
DC C urrent G ain h FE

t s tg
V C C 250V
25˚C
I C :I B1 :–I B2 =10:1.5:5

1
Sw it ching Time

–55˚C
t on
0.5
tf
10

5 0.1
0.02 0.05 0.1 0.5 1 5 10 14 0.2 0.5 1 5 10 14
Collector Current I C (A) Collector Current I C (A)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
50 50 130

10
0µ
Ma xim um Powe r Dissipat io n P C (W)

s
100
10 10
W
ith
Collector Cur rent I C (A)

Collector Curr ent I C (A)

In

5
fin
ite
he
at
si
nk

Without Heatsink
1 1 Natural Cooling 50
L=3mH
IB2=–1.0A
0.5 Without Heatsink 0.5 Duty:less than 1%
Natural Cooling

Without Heatsink
3.5
0.1 0.1 0
10 50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

118