, One.

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A.
D41E Series FAX: (973) 376-8960

-30 --80 VOLTS

-2 AMP, 8 WATTS

PNP POWER TRANSISTORS

COMPLEMENTARY TO THE D40E SERIES
CASE STYLE TO-202
Features: DIMENSIONS ARE IN INCHES AND (MILLIMETERS)

• High free-air power dissipation

• PNP complement to D40E NPN
• Low collector saturation voltage (0.5V typ. @ 1.0A lc)
• Excellent linearity
• Fast Switching

TYPE TERM 1 TERM 2 TEPM 3 TAB

TO-202 EMITTER BASE COLLECTOR COLLECTOR

maximum ratings (TA = 25° C) (unless otherwise specified)

RATING SYMBOL D41E1 041 E5 D41E7 UNITS
Collector-Emitter Voltage VCEO -30 -60 -80 Volts
Collector-Emitter Voltage VCES -45 -70 -90 Volts
Emitter Base Voltage VEBO -5 -5 -5 Volts
Collector Current — Continuous lc -2 -2 -2 A
Peakd) 'CM -3 -3 -3
Base Current — Continuous IB -1 -1 -1 A
Total Power Dissipation @ TA = 25°C PD 1.33 1.33 1.33 Watts
@Tc = 25°C 8 8 8
Operating and Storage Junction
Temperature Range TJ,Tstg -55 to +150 -55 to +150 -55 to +150 °C

thermal characteristics
Thermal Resistance, Junction to Ambient RgJA 75 75 75 °C/W
Thermal Resistance, Junction to Case Rftjc 15.6 15.6 15.6 °C/W
Maximum Lead Temperature for Soldering
Purposes: 1/e" from Case for 5 Seconds TL +260 +260 +260 °C
(1) Pulse Test Pulse Width = 300ms Duty Cycle < 2%.

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
electrical Characteristics (TC = 25° C) (unless otherwise specified)
I CHARACTERISTIC | SYMBOL " MIN TYP MAX UNIT

off characteristics*1'
Collector-Emitter Sustaining Voltage
D41E1 VCEO(SUS) -30 — Volts
(lc = 10mA) D41E5 -60 —
D41E7 -80
Collector Cutoff Current — — -0.1
ICES 0A
(VCE = Rated VCES)
Emitter Cutoff Current
(VEB = 5V) IEBO — — -0.1 /*A

second breakdown
| Second Breakdown with Base Forward Biased FBSOA SEE FIGURE 1

on characteristics
DC Current Gain
(lc = -100mA, VCE = -2V) hFE 50
(IC = -1A,VCE = -2V) hFE 10 — — —

Collector-Emitter Saturation Voltage — — 1.0 Volts

(IC = -1.0A, IB = -0.1 A) VcE(sat)
Base-Emitter Saturation Voltage —
(l c = 1.0mA, IB = 0.1A) VBE(sat) — -1.3 Volts

dynamic characteristics
Collector Capacitance
(VCB --10V, f = 1M|HZ) CCBO — 13 — PF

Current-Gain Bandwidth Product

(IC = -100mA, VCE = -10V) fr — 175 — MHz

switching characteristics
Resistive Load
Delay Time + \ - -1A, IBI = IBZ = -0.1 A td + V — 180 — nS
Rise Time
Storage Time ts — 250 —
VCC = 30V, tp = 25 Msec
Fall Time tf 110 —
(1) Pulse Test PW = 300ms Duty Cycle £ 2%.

MAX. POWER DIS sinVT ON

PE/.ktf
CURRENT " CASE * 70 •c
500
PULS ED OPE RAT 100
DUTY CYCLE < !0* Tj- I50«C
CURRE
N§Js PULSE Tj-25'C
IA V V^s Orn. PULSE
> v<"
I0m« PULSE ^ s •s^ . Tj—5S'C

D. c.- 100
\
N
V CE -ZV

O.IA ^
X ,\ ^^
XV L_
^V \ 30
MAX E , D4IEI
1
* \ ^
MAX VCE<) 04IE5—{—

MAX £< , D4IE-

. 1 0.01 o.io 1.0

iv
I
iov
1 ^IDOV I c -AMPERES

FIG. 2 TYPICAL HFE VS lc

FIG. 1 SAFE REGION OF OPERATION