Detailed Solutions

ESE-2018 E & T Engineering

Mains Test Series Test No : 6

Section A : Electromagnetics + Basic Electrical Engineering

Q.1 (a) Solution:
(i) For circular cylindrical coordinate system,

ρˆ ρ φˆ zˆ ρˆ ρ φˆ zˆ
 1 ∂ ∂ ∂ 1 ∂ ∂ ∂
∇× A = =
ρ ∂ρ ∂φ ∂z ρ ∂ρ ∂φ ∂z
Aρ ρAφ Az ρz 2 ρ2 sin 2 φ 2ρz sin 2 φ
1⎡
= (2 ρz sin 2φ) ρˆ − ρ(2 z sin 2 φ − 2ρz ) φˆ + (2ρ sin 2 φ)zˆ ⎤
ρ⎣ ⎦

= 2 z sin 2 φρˆ + 2 z(ρ − sin 2 φ)φˆ + 2 sin 2 φzˆ

(ii) For spherical coordinate system,

rˆ r θˆ r sin θ φˆ rˆ r θˆ r sin θ φˆ
 1 ∂ ∂ ∂ 1 ∂ ∂ ∂
∇×B = 2 = 2
r sin θ ∂r ∂θ ∂φ r sin θ ∂r ∂θ ∂φ
Ar rAθ r sin θAφ r 0 r 2 sin θ cos 2 θ
1 ⎡∂ 2 ⎤
= ⎢ ( r sin θ cos 2 θ) rˆ − 2 r 2 sin θ cos2 θ θˆ ⎥
r 2 sin θ ⎣ ∂θ ⎦
cos 3 θ − 2 cos θ sin 2 θ
= rˆ − 2 cos2 θ θˆ
sin θ
10 | ESE 2018 : MAINS TEST SERIES

Q.1 (b) Solution:

(i) Given that, Z0 = 60 Ω and ZL = (60 + j60) Ω.
So, the reflection coefficient at load end is,

ZL − Z0 60 + j 60 − 60 j 1
ΓL = Z + Z = 60 + j 60 + 60 = 2 + j = ∠63.43°
L 0 5

The voltage standing wave ratio can be given by,

1
1+
1 + ΓL 5 = 5+1
VSWR = = = 2.62
1 − ΓL 1 − 1 5 −1
5
(ii) Given that, Zin = (120 – j60) Ω.
The input impedance of a lossless line can be given by,
⎡ Z + jZ0 tan(βl) ⎤
Zin = Z0 ⎢ L ⎥
⎣ Z0 + jZL tan(β l) ⎦
⎛ 2 πl ⎞
For simplifying the calculations, let us take x = tan(βl) = tan ⎜ ⎟.
⎝ λ ⎠
⎡ 60 + j 60 + j 60 x ⎤
So, 120 – j60 = 60 ⎢ ⎥
⎣ 60 + j(60 + j 60)x ⎦
1 + j(1 + x )
2–j =
(1 − x ) + jx
[2(1 – x) + x] + j[2x – (1 – x)] = 1 + j(1 + x)
(2 – x) + j(3x – 1) = 1 + j(1 + x)
2–x = 1⇒x=1
or, 3x – 1 = 1 + x ⇒ x = 1
x = 1
So, tan(βl) = 1
π
βl = nπ + ; n = 0, 1, 2, 3, .......
4
π
nπ +
4 = λ ⎡nπ + π ⎤
l =
β 2 π ⎢⎣ 4 ⎥⎦
Minimum length of the line can be obtained by taking n = 0.
λ ⎛ π⎞ λ
So, lmin = ⎜0 + ⎟ =
2π ⎝ 4⎠ 8

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 Test No : 6 E & T ENGINEERING | 11
Q.1 (c) Solution:
Output
Efficiency, η =
Output + Losses

1 Output + Losses Losses

or, = = 1+
η Output Output

⎛1 ⎞
∴ Losses = ⎜ − 1⎟ Output
⎝η ⎠
Output at maximum η = (100,000) (0.8) (0.8) = 64000 W

⎛ 1 ⎞
Total transformer losses = ⎜ − 1 ⎟ (64000) = 1306.12 watts
⎝ 0.98 ⎠
1306.12
At maximum η, ohmic losses = core loss (Pc ) = = 653.06 W
2
These ohmic losses of 653.06 W occur at 80% of full load current.
2
⎛ 100 ⎞
∴Ohmic losses at full load = 653.06 × ⎜ ⎟ = 1020 W
⎝ 80 ⎠
1020
From equation, re pu = = 0.0102 = εr
100000
It is given that, ze pu = 0.05

xe pu = (0.05)2 − (0.0102)2 = 0.0489 = εx

Voltage regulation = εr cos θ2 + εxsinθ2

= (0.0102) (0.8) + (0.0489) (0.6)
= 0.0375 or 3.75%

Q.1 (d) Solution:

At no load, the counter emf is
Ea1 = Vt – Ia1ra
= 230 – 3.33 × 0.3 = 229 V

230
Field current, If = = 1.44 A
160

At full load, Ia2 = IL – If = 40 – 1.44 A

= 38.56 A

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12 | ESE 2018 : MAINS TEST SERIES

∴ Counter emf at full load is,

Ea2 = 230 – 38.56 × 0.3
= 218.43 volts
At full load, the field flux is, φ2 = 0.96 φ1 (given)
The counter emf Ea is given by,
Ea = Ka φ ωm
Ea1 K a φ1 ω m 1 φ1n1
∴ Ea 2
= Kφω = φn
a 2 m2 2 2

229 1000 × φ1
or = n (0.96 φ )
218.43 2 1

∴ Full load speed, n2 = 993.6 rpm

At full load, Ea2 = Ka φ2 ωm

218.43 × 60
or Kaφ2 =
2 π× 993.6
∴ Electromagnetic, or developed, torque at full load,
Te = Ka φ2 Ia2
218.43 × 60
= × 38.56 = 80.95 Nm
2 π× 993.6
Q.1 (e) Solution:

120 f 1 120 × 50
(i) Ns = =
P 6

= 1000 rpm
(ii) N0 = (1 – s0) Ns
= (1 – 0.01) × 1000
= 990 rpm
(iii) Nfl = (1 – sfl) Ns = (1 – 0.03) × 1000
= 970 rpm
(iv) Frequency of rotor current at standstill
f2 = sf1 = 1 × 50 = 50 Hz
(v) Frequency of rotor current at full-load
f2 = sfl f1 = 0.03 × 50 = 1.5 Hz

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 Test No : 6 E & T ENGINEERING | 13
Q.2 (a) Solution:
Percentage full-load voltage drop in resistance
I 2 re 2
× 100 = 2
E2
Percentage full-load voltage drop in leakage reactance
I 2 xe2
× 100 = 4
E2

I 22 re 2
(i) From above, = 0.02
I 2 E2
∴ Full-load ohmic loss = 0.02 × Rated VA = Iron Loss (given)
Rated VA × 1
Full-load, η = × 100
Rated VA × 1 + I 22 re 2 + Iron loss
Rated VA × 100
=
Rated VA × 0.02 + Rated VA + 0.02 × Rated VA
100
= = 96.154%
1.04
(ii) Maximum voltage drop means maximum voltage regulation. Therefore, full-load
p.f. at which voltage drop is maximum
re 2 percentage re 2
= =
ze 2 percentage ze 2
2
= = 0.4472 lagging
2 2 + 42
(iii) Load p.f. at which voltage drip is zero
xe 2 percentage xe 2
= =
ze 2 percentage ze 2
4
= = 0.8944 leading
2 2
2 +4

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14 | ESE 2018 : MAINS TEST SERIES

Q.2 (b) Solution:

 
Let us denote the electric field in both the mediums as E1 and E2 as shown below.
z
E0t
ε0
E0n 30° E0

E1 θ1 E1n
ε1 = 2ε0

E1t
E2 θ2
ε2 = 3ε0
E2n

E2t
E3
θ3
E3n ε0

E3t

When the field is in medium-1:

  1
E0t = E0t = E0 sin 30° = E0 sin 30° = E0
2

  3
E0n = E0 n = E0 cos 30° = E0 sin 30° = E0
2
Tangential component of the electric field is continuous across the boundary.
1
So, E1t = E0t = E0
2
Normal components of the electric flux density is continuous across the boundary.

3
So, D1n = D0n = ε0E0n = ε0 E0
2

D1n ( 3 / 2) ε0 E0 3
E1n = = = E0
ε1 2 ε0 4

−1 ⎛ E1t ⎞ −1 ⎛ E0 /2 ⎞ −1 ⎛ 2 ⎞
θ1 = tan ⎜ ⎟ = tan ⎜⎜ ⎟⎟ = tan ⎜ ⎟ = 49.11°
⎝ E1n ⎠ ⎝ 3 E0 /4 ⎠ ⎝ 3⎠

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 Test No : 6 E & T ENGINEERING | 15
When the field is in medium-2:
1
E2t = E1t = E0
2

3
D2n = D1n = ε0 E0
2

D2 n E
E2n = = 0
ε2 2 3

−1 ⎛ E2 t ⎞ −1 ⎛ E0 /2 ⎞ −1
θ2 = tan ⎜ ⎟ = tan ⎜⎜ ⎟⎟ = tan ( 3) = 60°
⎝ E2 n ⎠ ⎝ E0 /2 3 ⎠
When field is in air below the medium-2:
1
E3t = E2t = E0
2
3
D3n = D2n = ε0 E0
2
D3n 3
E3n = = E0
ε0 2

−1 ⎛ E3t ⎞ −1 ⎛ E0 /2 ⎞ −1 ⎛ 1 ⎞
θ3 = tan ⎜ ⎟ = tan ⎜⎜ ⎟⎟ = tan ⎜ ⎟ = 30°
⎝ E3n ⎠ ⎝ 3E0 /2 ⎠ ⎝ 3⎠

Q.2 (c) Solution:

(i) For a dc motor, developed torque,
Ea I a
Te =
ω
or, Te ⋅ ω = EaIa = [Vt – Ia(ra + rs)]Ia
Substituting the values, we get
2 π × 1200
80 × = [250 – Ia × 0.4] Ia
60

or, I a2 − 625 I a + 25132.74 = 0

Its solution gives, Ia = 43.2 A

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16 | ESE 2018 : MAINS TEST SERIES

(ii) For this part, let 43.2 A be denotes by Ia1.

I a1
New value of current, Ia2 = = 21.6 A
2
Counter emf, Ea1 = 250 – 43.2 × 0.4 = 232.72 V
Counter emf, Ea2 = 250 – 21.6 × 0.4 = 241.36 V
Ea1 N 1 φ1
Now, Ea 2 = N 2 φ2
φ2 1200 241.36
or, = × = 0.6914
φ1 1800 232.76
φ1 − φ 2
Percentage reduction in flux = × 100 = (1 – 0.6914) × 100
φ1
= 30.86%

Q.3 (a) Solution:

Let the intrinsic impedance of the free-space is η0.
Given that,
Ei20
Power density of incident wave = = 20 W/m 2
2η0
According to Snell’s law,
sin θi sin(45°) 1
sinθt = = =
εr 25 5 2

cos θt = 0.98995
The intrinsic impedance of the dielectric medium is,
η0 η
η2 = = 0
εr 5
Given that the electric field of the incident wave is perpendicular to the plane of
incidence. So, the reflection coefficient (Γ⊥) and the transmission coefficient (τ⊥ ) can
be given by,
η2 cos θi − η1 cos θt
Γ⊥ =
η2 cos θi + η1 cos θt
η0
cos(45°) − η0 (0.98995)
5 = − 0.75
= η
0 cos(45°) + η (0.98995)
0
5
τ⊥ = 1 + Γ⊥ = 0.25

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 Test No : 6 E & T ENGINEERING | 17
Er0 = Ei0 Γ⊥
Et0 = Ei0 τ1
Power density of the reflected wave is,
2 2 2
Er 0 Γ⊥ Ei 0 Γ E 2
= = ⊥ i0 = Γ⊥ (20) W/m 2
2 η0 2 η0 2 η0
= 11.25 W/m2
Power density of the transmitted wave is,
2 2 2
Et 0 τ⊥ Ei 0 2 Ei 0
= = 5 τ⊥
2 η2 2( η0 / 5) 2 η0
= 5(0.25)2 (20) = 6.25 W/m2
Q.3 (b) Solution:
The resonant frequency for the lowest (TE101) mode is,
2 2
3 × 108 ⎛ 1 ⎞ ⎛ 1 ⎞
f0 = ⎜ ⎟ +⎜ ⎟
2 εr ⎝ a ⎠ ⎝ c ⎠
2 2
3 × 108 ⎛ 1 ⎞ ⎛ 1 ⎞
= ⎜ ⎟ +⎜ ⎟ = 2.4 GHz
2 4 ⎝ 0.05 ⎠ ⎝ 0.04 ⎠
The loss-tangent of the liquid at 6 GHz is,
σ
tanδ = = 10 −3
ωε
ε 10 −6
= s
σ 12 π
For calculating the quality factor we need the total energy stored in the cavity and
the total power dissipation in the cavity.
The electrical energy stored in the cavity is,

ε  2
We =
2 ∫ E dv
vol

The magnetic energy stored in a cavity is equal to the electrical energy stored.
So, the total energy stored in the cavity can be given by,
 2
WT = We + Wm = 2We = ε ∫ E dv
vol

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18 | ESE 2018 : MAINS TEST SERIES

As the losses in the cavity walls are negligible, the total power dissipation in the
cavity can be given by,
   2
PL = ∫ E ⋅ J dv = σ ∫ E dv
vol vol
The quality factor of the cavity is,
−6
W ε 9 10
Q = ω0 T = 2 π f 0 = 2 π × 2.4 × 10 × = 400
PL σ 12 π

Q.3 (c) Solution:

120 f 120 × 50
Ns = = = 375 rpm
P 16
Speed at full load = 360 rpm

Ns − Nr 375 − 360
Slip at full load, sf l = = = 0.04
Nr 375

R2 0.02 2
Slip at maximum torque, sM = = =
X 20 0.15 15

(i) Speed at which maximum torque occurs,

NM = (1 – sM)Ns

⎛ 2 ⎞
= ⎜ 1 − ⎟ × 375 = 325 rpm
⎝ 15 ⎠

2
⎛ 2 ⎞
s 2f l (0.04)2 + ⎜ ⎟
2
+ sM
τmax ⎝ 15 ⎠
(ii) = = = 1.8167
τ fl 2s f l sM 2
2 × 0.04 ×
15
(iii) Let the external resistance per phase added to the rotor circuit be r ohms.
∴rotor resistance per phase, R2 = (0.02 + r)
The starting torque will be maximum when
R 2 = X 20
0.02 + r = 0.15
r = 0.15 – 0.02 = 0.13 Ω

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 Test No : 6 E & T ENGINEERING | 19
Q.4 (a) Solution:
 
(i) For uniform plane wave, E , H and the wave normal (nˆ ) are perpendicular to each
other. Therefore,
 
E⋅ H = 0

E ⋅ nˆ = 0

H ⋅ nˆ = 0
From the given field expressions,
 1 
n̂ ⋅ r = ( x + 3 z ) ; r = xxˆ + yyˆ + zzˆ
2
1 3
So, n̂ =xˆ + zˆ
2 2
  1 − j 0.04 π( x + 3 z )
E ⋅ H = 30 π ( − j 3 + j 4 − j 1) e =0

 ⎛ 3 3 ⎞ − j 0.02 π( x + 3 z )
E ⋅ nˆ = ⎜⎜ − j +j ⎟⎟ e =0
⎝ 2 2 ⎠
 1 ⎛ 3 3 ⎞ − j 0.02 π( x + 3z )
H ⋅ nˆ = ⎜⎜ − ⎟e =0
30 π ⎝ 2 2 ⎟⎠
From the above three expressions, it is clear that the given fields correspond to a
uniform plane wave.
(ii) For an ideal dielectric medium, ε = ε0 εr and μ = μ0.
  
E = E ⋅ ( E)∗ = ( − j 3 xˆ + 2 yˆ + jzˆ ) ⋅ ( j 3 xˆ + 2 yˆ − jzˆ )

= 3 + 4 + 1 = 8 V/m

 1
H = ( 3xˆ + j 2 yˆ − zˆ ) ⋅ ( 3xˆ − j 2 yˆ − zˆ )
30 π

3+4+1 8
= = A/m
30 π 30 π

For uniform plane waves in ideal dielectric medium,


E 120 π
η =  = 30 π =
H εr

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20 | ESE 2018 : MAINS TEST SERIES

So, ε r = 16
The velocity of the wave,
c 3 × 108
v = = = 0.75 × 108 m/s
εr 4
From the given field equations,

βn̂ ⋅ r = 0.02 π( x + 3z )

⎛1 3 ⎞
So, β n̂ = 0.02 π( xˆ + 3 zˆ ) = 0.04π ⎜⎜ xˆ + zˆ ⎟
⎝2 2 ⎟⎠

1 3
β = 0.04 π, cosθx = , cosθy = 0 and cosθz = .
2 2
Where, θx , θy and θz are the angles made by the vector n̂ with axes x, y and z
respectively.
ω = βv = 0.04π × 0.75 × 108 = 3π × 106 rad/s
ω
f = = 1.5 MHz
2π
(iii) Phase velocities along x, y and z directions are,
v 0.75 × 108
vx = = = 1.5 × 108 m/s
cos θx (1 /2)

v 0.75 × 108
vy = = =∞
cos θy 0

v 0.75 × 108
vz = = = 0.866 × 108 m/s
cos θz ( 3 / 2)
(iv) To find the state of polarization of the wave, the tip of the electric field vector should
be traced at a point in the space. For simplifying the calculations, selecting the point
for which x = 0 and z = 0.
So, the time variation of different components of the electric field at x = z = 0 can be
given by,
⎛ π⎞
Ex = 3 cos ⎜ ωt − ⎟ = 3 sin ωt
⎝ 2⎠
E y = 2cosωt

⎛ π⎞
Ez = cos ⎜ ωt + ⎟ = − sin ωt
⎝ 2⎠

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 Test No : 6 E & T ENGINEERING | 21

E = ( 3 sin ωt )2 + (2 cos ωt )2 + ( − sin ωt )2

= 4 cos 2 ωt + 4 sin 2 ωt = 2

E is constant with time at x = z = 0. So, the polarization of the wave is circular. The

sense of rotation can be identified by tracing the E at different values of time as
follows:
At t = 0, ωt = 0 ⇒ Ex = 0, Ey = 2, Ez = 0
T π 3 1
At t = , ωt =
4
⇒ Ex = ,E =
2 y 2 , Ez = − 2
8
T π
At t = , ωt = ⇒ Ex = 3 , Ey = 0, Ez = –1
4 2
z
n (wave)

30°

60° t=0
y
2

x
t = T/4

From the above diagram, it is clear that the sense of rotation of the wave with time is
left handed. So, the state of polarization of the wave is left circular.

Q.4 (b) Solution:

The power radiated by the antenna is,
Prad = ηPin = 0.80 × 100 = 80 W
The radiation intensity in the direction of maximum radiation can be given by,
P
Umax = DU avg = D rad ; D = directivity
4π
The directivity of the antenna can be given by,
4π 4π
D = =
π π π π
∫ ∫ p(θ, φ)sin θ dθ dφ ∫ ∫ sin 2 φ sin 3 θ dθ dφ
φ=0 θ=0 φ=0 θ=0

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22 | ESE 2018 : MAINS TEST SERIES

4π
= π π
2
∫ sin φ dφ ∫ sin 3 θ dθ
φ=0 θ=0

4π
= π π
⎛ 1 − cos 2φ ⎞ 2
∫ ⎜⎝ 2 ⎟⎠ dφ ∫ (1 − cos θ)sin θ dθ
φ=0 θ=0
Let, x = cosθ ⇒ –sinθdθ = dx

4π 4π 4π
So, D = = = =6
π 1 3 ⎤1 ⎛π⎞⎛ 4⎞
⎡ φ sin 2φ ⎤ 2 ⎛ π⎞⎡ x ⎜ ⎟⎜ ⎟
⎢⎣ 2 − 4 ⎥⎦ ∫ (1 − x ) dx ⎜ ⎟ ⎢x − ⎥ ⎝2⎠⎝3⎠
0 −1 ⎝ 2 ⎠ ⎣⎢ 3 ⎦⎥
−1

Prad 6 × 80 120
So, Umax = D = = W/steradian
4π 4π π
Power density at a distance of 10 km in the direction of maximum radiation is,

Prad DUavg Umax

Pavg = D = = ; r = 10 km
4 πr 2 r2 r2

120 120
So, Pavg = = μW/m 2 = 0.382 μW/m 2
4 2 100 π
π× (10 )

Q.4 (c) Solution:

From the open-circuit test,

−1 P 396
φ 0 = cos = cos −1 = 70°
VL I m 120(9.65)

∴ IcL = Im cos φ0 = 9.65 (0.342) = 3.3 A

IφL = Im sin θ0 = 9.65 sin 70° = 9.07 A

396
Hence, rcL = = 36.3 Ω
3.32

This can also be found from

1E L V 120
rcL = I = I = 3.3 = 36.3 Ω
c c

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 Test No : 6 E & T ENGINEERING | 23
On the high side this quantity becomes,
rcH = a2rcL = 400(36.3) = 14520 Ω
The magnetizing reactance referred to the low side is

E1 VL 120
xφL = = = = 13.2 Ω
Iφ Iφ 9.07

The corresponding high-side value is

xφH = a2xφL = 400(13.2) = 5285 Ω
From the data of the short-circuit test we get directly
92
ZeH = = 4.42 Ω
20.8
4.42
∴ ZeL = = 0.011 Ω
400

810
Also, ReH = = 1.87
(20.8)2

1.87
∴ ReL = = 0.0047
400

XeH = 2
ZeH 2
− ReH = 4.42 2 − 1.87 2 = 4 Ω

4
∴ XeL = = 0.01 Ω
400

Section B : Analog Circuits-1 + Materials Science-1 + Electronic Devices & Circuits-2 +

Advanced Electronics Topics-2

Q.5 (a) Solution

Given that, εr = 4.94, n2 = 2.69.
From Clausius Mossotti’s relation,
εr − 1 N (α e + αi )
= ...(i)
εr + 2 3 ε0
If the measurements are done in the optical frequency region then we have, from eq. (i)
εr = n2, and αi = 0

n2 − 1 Nα e
or = ...(ii)
n2 + 2 3 ε0

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24 | ESE 2018 : MAINS TEST SERIES

by dividing equation (i) with equation (ii),

εr − 1 n 2 + 2 α + αi
×
2 = e
εr + 2 n − 1 αe
α 4.94 − 1 2.69 + 2 3.94 × 4.69
or 1+ i = × = = 1.576
αe 4.94 + 2 2.69 − 1 6.94 × 1.69
αi
or = 0.576
αe
αe
or = 1.735[Ratio between electronic and ionic polarizability]
αi

Q.5 (b) Solution:

• For all the transistors in the given circuit, drain and gate terminals are tied. So, all the
transistors are in saturation region.
• As the gate terminal of a MOSFET does not draw any current and all the transistors,
connected in series, are in saturation, the drain current flowing through all the
transistors is same.
ID = ID = ID = 120 μA
1 2 3
• For transistor Q1,
VGS1 = 1.5 V

μnC ox ⎛ W1 ⎞ 2
⎜ ⎟ (VGS 1 − Vtn ) = ID = 120 μA
2 ⎝ L1 ⎠ 1

⎛W ⎞ 2
60 ⎜ 1 ⎟ ( 1.5 − 1 ) = 120
⎝ L1 ⎠

W1
= 8 ⇒ W1 = 8L1 = 8 μm
L1

• For transistor Q2,

VGS2 = 3.5 V – 1.5 V = 2 V

μnC ox ⎛ W2 ⎞ 2
⎜ ⎟ (VGS 2 − Vtn ) = ID2 = 120 μA
2 ⎝ L2 ⎠

⎛W ⎞ 2
60 ⎜ 2 ⎟ ( 2 − 1) = 120
⎝ L2 ⎠
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 Test No : 6 E & T ENGINEERING | 25

W2
= 2 ⇒ W2 = 2L2 = 2 μm
L2
• For transistor Q3,
VGS 3 = 5 V – 3.5 V = 1.5 V
μnC ox ⎛ W3 ⎞ 2
⎜ ⎟ (VGS 3 − Vtn ) = ID = 120 μA
2 ⎝ L3 ⎠ 3

⎛W ⎞ 2
60 ⎜ 3 ⎟ ( 1.5 − 1) = 120
⎝ L3 ⎠
W3
= 8 ⇒ W3 = 8L3 = 8 μm
L3

Q.5 (c) Solution

Considering the given logic circuit as shown below:
A
B
Inputs C
D
F (Output)
T
The Boolean expression for the output (F ) of the circuit, under no fault condition, can be
given as,

(F )NF = ABC + D + CD

= ABC + D ∵ D + CD = D (1 + C) = D

(F )NF = ABCD ...(i)

The Boolean expression for the output (F ) of the circuit, when the line “T ” is connected
to the ground, can be given as,

(F )F = ABC + D + 0

= ABC + D

(F )F = ABCD ...(ii)
From the equations (i) and (ii), it is clear that, the Boolean expression for the output (F )
is same for both the situations (with and without fault).
So, no input combination can detect the fault occurred in the circuit, when the line “T ”
is connected to the ground.

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26 | ESE 2018 : MAINS TEST SERIES

Q.5 (d) Solution:

Diffusion length, Ln = Dn τn = μnVt τn = 1350 × 0.026 × 10 −6 = 5.925 × 10 −3 cm

AqDnni2 4 × 1.6 × 10−19 × (1350 × 0.026) × (2.25 × 1020 )

For a n+p junction, I0 = = A
Ln N A 5.925 × 10 −3 × 1015

= 8.53 × 10–10 A

⎛ I ⎞ ⎛ 40 × 10 −3 ⎞
Voc = Vt ln ⎜ 1 + L ⎟ = 0.026 ln ⎜ 1 + ⎟V
⎝ I 0⎠
⎜ 8.53 × 10 −10 ⎟
⎝ ⎠
= 0.46 V
Isc = IL = 40 mA
Pm = (FF)Isc Voc = 0.70 × 40 × 0.46 mW = 12.88 mW
Pm 12.88
Efficiency, η = = = 0.036 (or) 3.6%
Pin 90 × 4

Q.5 (e) Solution:

(i) Body Centered Cubic (BCC):
In this case, the body diagonal of the cell is four times the radius of atom.

4r = a 3 B

A D
a

∴ 4r = a 3

a 3
r =
4

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 Test No : 6 E & T ENGINEERING | 27
Volume of cube = a3
Effective number of atoms in a unit cell of BCC structure = 2
4 3
So, Volume occupied by 2 atoms = 2× πr
3
Volume occupied by atoms in a unit cell
Packing fraction =
Volume of cube

4 3 3
2× × πa 3 × 3
3 4 3π
= = = 0.68
3 8
a
∴ Atomic packing fraction of BCC is 0.68.
(ii) Face Centered Cubic (FCC):
B

E
a 2

A D
a

Face diagonal = 4r = a 2

a 2
⇒ r =
4
Volume of cube = a3
Effective number of atoms in a unit cell of FCC structure = 4
4 3
So, Volume occupied by 4 atoms= 4 × πr
3

4 2 2
4× × π × a3 × 3
3 4 π
Packing fraction = = = 0.74
a3 3 2
∴ Atomic packing fraction of FCC is 0.74.

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28 | ESE 2018 : MAINS TEST SERIES

Q.6 (a) Solution

“Elemental solid dielectrics” are the materials consisting of single type of atoms (e.g.
Diamond, Sulphur, Germanium etc.) These materials contain neither ions nor permanent
dipoles and thus it exhibits only electronic polarization.
Let us consider ‘αe’ is the polarizability per atom in such materials then,
 
Polarization ( P) = N α e Ei ...(i)
where, N = Number of atoms/m 3


and Ei = The internal field seen by the atom
we have also,
  γ 
Ei = E + P ...(ii)
ε0
where, γ = Proportionality constant which is referred to as the internal field constant.

E = Applied field.
Here, we assume for macroscopic relation,
Then,
  
Polarization ( P) = ε0 χ e E = ε0 (εr − 1 ) E ...(iii)
From equation (i) and (ii) we get,
 ⎡ γ ⎤
P = N α e ⎢E + P⎥
⎣ ε0 ⎦
 ⎡ γ  ⎤
or ε0 χ e E = N α e⎢
⎣
E +
ε0
ε( χ E)
0 e ⎥
⎦
or ε0χ e = Nα e [1 + γ χ e ]
Nα e
or χe = ⋅ [1 + γ χ e ]
ε0
Since susceptibility (χ e) = εr – 1, so,
Nαe Nαe
χe = ⋅ γ χe +
ε0 ε0
⎡ γ Nαe ⎤ Nα e
or (εr − 1 ) ⎢1 − ⎥ =
⎣ ε0 ⎦ ε0

( Nα e /ε0 ) +1
or εr =
⎛ γ Nαe ⎞
⎜1 – ⎟
⎝ ε0 ⎠

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 Test No : 6 E & T ENGINEERING | 29

⎛ Nα e ⎞ ⎛ Nα e ⎞
1+⎜ ⎟− γ⎜ ⎟
⎝ ε0 ⎠ ⎝ ε0 ⎠
or εr =
⎛ Nα e ⎞
1− γ⎜ ⎟
⎝ ε0 ⎠
⎛ Nαe ⎞
1 + (1 − γ ) ⎜ ⎟
⎝ ε0 ⎠
⇒ εr = ...(iv)
⎛ Nα e ⎞
1− γ⎜ ⎟
⎝ ε0 ⎠

If the internal field Ei is taken as the Lorentz field then for a cubical lattice structure,
1
γ = then equation (iv) may reduce to
3
2 ⎛ Nαe ⎞
1+ ⎜ ⎟
3 ⎝ ε0 ⎠
εr = ...(v)
1 ⎛ Nα e ⎞
1− ⎜ ⎟
3 ⎝ ε0 ⎠
Nα e
Let, = x then equation (v) will be,
ε0
2
1+ x
εr =
3 ...(vi)
1
1− x
3
After solving equation (vi) we get,
3 (εr − 1 )
x =
(εr + 2 )
Nα e 3 (εr − 1 )
∵ x = = ε +2
ε0 (r )
Final equation is,
Nα e ε −1
= r ...(vii)
3 ε0 εr + 2
The equation (vii) represents the well known “CLAUSIUS-MOSSOTTI RELATION”.
This relation contains the following assumptions:
• The polarizability of molecules is isotropic.
• The arrangement of molecules is isotropic.
• Polarization of the molecules is by elastic displacement only.
• Absence of short range (non-dipolar) interactions.
All these conditions are fulfilled by the rare gases and by little else.
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30 | ESE 2018 : MAINS TEST SERIES

Q.6 (b) Solution:

Given that, NE = 5 × 1018 acceptors/cm3
NB = 1016 donors/cm3
NC = 1015 acceptors/cm3
ni = 1.5 × 1010 cm–3
• The built-in potential of EB and CB junctions can be given by,
⎛N N ⎞ ⎛ 5 × 1018 × 1016 ⎞
Vbi (EB) = Vt ln ⎜⎜ E 2 B ⎟⎟ = 0.026 ln ⎜⎜ 20 ⎟
⎟ V = 0.86 V
⎝ ni ⎠ ⎝ 2.25 × 10 ⎠
⎛N N
B C
⎞ ⎛ 1016 × 1015 ⎞
Vbi (CB) = t ⎜⎜
V ln ⎟ = 0.026 ln ⎜ ⎟ V = 0.64 V
2 ⎟ ⎜ 2.25 × 10 20 ⎟
⎝ ni ⎠ ⎝ ⎠
(i)
• The width of the depletion region of EB junction extended into base region can be
given by,
⎛ NE ⎞ ⎛ NE ⎞ 2 εsi (NE + NB )
W1 = ⎜ N + N ⎟ Wdep(EB) = ⎜ N + N ⎟ qNENB
[Vbi(EB) − VEB ]
⎝ E B⎠ ⎝ E B⎠

2 εsi ⎛ N E ⎞ [Vbi( EB) − VEB ]

= ⎜ ⎟
q ⎝ N B ⎠ ( NE + N B )

2 × 1.06 × 10 −12 ⎛ 5 × 1018 ⎞ (0.86 − 0.50)

= ⎜ ⎟ cm = 0.22 μm
1.6 × 10 −19 ⎜⎝ 1016 ⎟⎠ (500 + 1) × 1016

• The width of the depletion region of the CB junction extended into base region can
be given by,
⎛ NC ⎞ ⎛ NC ⎞ 2 εsi (NC + NB )
W2 = ⎜ N + N ⎟ Wdep(CB) ⎜ N + N ⎟ [Vbi(CB) − VCB ]
⎝ C B⎠ ⎝ C B⎠ NC NB

2εsi ⎛ NC ⎞ [Vbi(CB) − VCB ]

= ⎜ ⎟
q ⎝ N B ⎠ ( NC + N B )

2 × 1.06 × 10 −12 ⎛ 1015 ⎞ (0.64 + 5)

= ⎜ ⎟ cm = 0.26 μm
1.6 × 10 −19 ⎜⎝ 1016 ⎟⎠ (10 + 1) × 1015

• So, the width of the neutral base region can be given by,
WB = 1 μm – W1 – W2 = 1 – 0.22 – 0.26 = 0.52 μm

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 Test No : 6 E & T ENGINEERING | 31
(ii)
• Using the law of junction, the minority carrier concentration at the edge of the
depletion region of EB junction on base side can be given by,
V /V
pB(0) = pB0 e EB T

ni2 2.25 × 1020

pB0 = = 16
cm −3 = 2.25 × 10 4 cm −3
NB 10

pB(0) = 2.25 × 104 × e (0.50/0.026) = 5 × 1012 cm–3

• The minority carrier distribution in the base region can be plotted as,
neutral base region
pB(0)

pB0

0 WB x

• The total excess charge present in the neutral base region can be given by,
QXB = Aq (shaded area in the above diagram)
A
= × q × WB × [ pB (0) − pB0 ]
2

3 × 10 −2
= × 1.6 × 10−19 × 0.52 × 10 − 4 × (5 × 1012 − 2.25 × 10 4 ) C
2
3 × 1.6 × 0.52 × 5
= × 10 −13 C = 0.624 pC
2

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32 | ESE 2018 : MAINS TEST SERIES

Q.6 (c) Solution:

• To simplify the circuit, the portion left side to the base of the transistor Q1 can be
replaced with it’s Thevenin’s equivalent circuit, which can be determined as follows:

100
VTh = × 10 V − 5 V = 1.67 V +5 V
100 + 50
50 kΩ
RTh = (100⎥⎥ 50) kΩ = 33.33 kΩ
VTh

• So, the equivalent of the given circuit will be as shown below. 100 kΩ

+5 V
–5 V

RE 1

+ IE 1
0.7 V RC 2
33.33 kΩ +
– Q1 VCE IC2
VTh = +1.67 V
1
RTh IB 1 –
IC1 IB 2 +
Q2 VCE 2
I1 +
–
0.7 V – IE 2
RC 1
RE2

–5 V

• For the given values of IC , VCE , IC , VCE , both Q1 and Q2 are in forward active
1 2 2 2
region.
IC = IC = 0.8 mA
1 2
IC1
IB = IB = = 8 μA
1 2 β
IE = IE = (1 + β)IB = 0.808 mA
1 2 1
VEC = 3.5 V
1
VCE = 4 V
2
• By applying KVL in emitter-base loop of Q1, we get
IE RE + 0.7 V + RTh IB + 1.67 V = 5 V
1 1 1

5 − 1.67 − 0.7 − (33.33 × 8 × 10−3 )

RE = kΩ = 2.925 kΩ
1 0.808
I1 = IC – IB = 0.8 mA – 8 μA = 0.792 mA
1 2
VEC1 = 10 V – IE RE – I1 RC
1 1 1

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 Test No : 6 E & T ENGINEERING | 33

10 − (2.925 × 0.808) − 3.5

RC = kΩ = 5.22 kΩ
1 0.792
• By applying KVL in emitter-base loop of Q2, we get,
I1 RC = 0.7 V + IE RE
1 2 2
(0.792 × 5.22) − 0.7
RE = kΩ = 4.25 kΩ
2 0.808
VCE2 = 10 V – IC RC – IE RE
2 2 2 2
10 − (0.808 × 4.25) − 4
RC = kΩ = 3.2075 kΩ
1 0.80
Q.7 (a) Solution:
• When the diode is ON, the capacitor charges through Rs and (R⎥⎥ Rf ) as shown below.
Rs C
+

vi +
– if R Rf vo

R = 100 kΩ = 100000 Ω and Rf = 100 Ω

So, (R⎥⎥ Rf ) ≈ Rf = 100 Ω
The charging time constant will be,
τf = (Rf + Rs)C = (100 + 100) × 10–6 = 200 μs
• When the diode is OFF, the capacitor discharges through R and Rs as shown below.
Rs C
+

vi +
– ir R vo

The discharging time constant will be,

τr = (R + Rs )C = 100.1 × 103 × 10–6 = 100.1 ms
• For t < 0.1 ms, vi = 0 and vo = 0
• For 0.1 ms < t < 0.2 ms,
vi = 10 V
+
at t = (0.1 ms) , the voltage across the capacitor is zero and the output voltage will
be,

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34 | ESE 2018 : MAINS TEST SERIES

( R f R) 100
vo(0.1+) = × 10 V ≈ × 10 V = 5 V
( R f R ) + Rs 100 + 100

At time increase, the capacitor charges towards 10 V and the output voltage keeps
on decreasing exponentially. At t = 0.2 ms, the input voltage switches from
10 V to –4 V.
At t = (0.2 ms)–,

− (0.1×10 −3 )/τ f − (0.1×10 −3 )/(200 × 10−6 )

vo(0.2–) = 5 × e = 5× e = 3.032 V
vc (0.2–) = 10 – 2(3.032) = 3.936 V
• For 0.2 ms < t < 0.3 ms,
vi = –4 V
The diode will be OFF in this case and the voltage across capacitor discharges through
R and Rs.
+ 3.936 V –
– +
Rs C
4V ir R vo

+ –

vc(0.2+) = vc(0.2–) = 3.936 V

100
vo(0.2+) = ( − 4 − 3.936) × V = − 7.928 V
100 + 0.1
At t = (0.3 ms)–,
−(0.1 × 10−3 )/τr
vc(0.3–) = 3.936 e V = 3.936 e −(0.1 /100.1) = 3.932 V
−(0.1 /100.1)
vo(0.3–) = −7.928 e = − 7.92 V
• For 0.3 ms < t < 0.4 ms,
vi = 4 V
Rs C
+ +
+3.897 V–
4V R Rf vo

– –

At t = (0.3 ms)+, vc (0.3+) = vc(0.3–) = 3.932 V

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 Test No : 6 E & T ENGINEERING | 35

100
vo(0.3+) = (4 − 3.932) × = 0.034 V
100 + 100

− (0.1 × 10 −3 )/τ f
vo(0.4–) = 0.034 × e V = 0.034 × e − (100/200) = 0.0206 V

vc(0.4–) = 4 – (2 × 0.0206) = 3.9588 V

• For t < 0.4 ms,
vc(0.4+) = 3.9588 V
vi = 0
100
vc(0.4+) = −3.9588 × = −3.9548 V
100.1
As t increases from 0.4 ms, vi = 0 and the voltage across the capacitor discharge
through Rs and R.
By symmarising all the above calculations, the output voltage waveform can be
plotted as,
vo

5V
τf
3.032 V

0.034 V τf
0.0206 V
0 0.1 0.2 0.3 0.4 t (ms)
τr

–3.9548 V

–7.92 V
τr
–7.928 V

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36 | ESE 2018 : MAINS TEST SERIES

Q.7 (b) Solution:

(i) When VGB = VD = 0 and VGT is increased to VPT, the outline of the depletion regions
inside the device can be drawn as,

p+

2a + WT

n + WB
p+

When VGB = VD = 0 and VGT = VPT , WT + WB = 2a

2 εs 2 εs
WT = (Vbi − VGT ) = (Vbi − VPT )
qND qND

2 εs 2 εs
WB = (Vbi − VGB ) = (Vbi )
qND qND
Under normal operation,

2 εs
2a = 2 (Vbi − VP ) ...(i)
qN D

2 εs 2 εs 2 εs
2 (Vbi − VP ) = (Vbi − VPT ) + (Vbi )
qN D qN D qN D

2 (Vbi − VP ) = (Vbi − VPT ) + Vbi

Given that, VP = –8 V and Vbi = 1 V.
So, (1 − VPT ) + 1 = 2 (1 + 8)
1 – VPT = (5)2 = 25
VPT = –24 V
(ii) When VGB = 0 and VPT < VGT < 0 and VD is increased to the pinch-off point, the
outline of the depletion regions inside the device can be drawn as,
p+
+
WT
2a
n + WB
+
p

When VD = VD(sat), VGB = 0 and VPT < VGT < 0,

WT + WB = 2a

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 Test No : 6 E & T ENGINEERING | 37

2 εs 2 εs
(Vbi + VD(sat) − VGT ) + (Vbi + VD(sat) ) = 2a
qN D qN D

From the equation (i) used in part (i), we get,

2 εs
2 (Vbi − VP ) = 2a
qN D

So, by substituting VD(sat) = 3 V, Vbi = 1 V and VP = –8 V in the above two equations,

we get,
(4 − VGT ) + 4 = 2 9 = 6
4 – VGT = (6 – 2)2 = 16
VGT = 4 – 16 = –12 V

Q.7 (c) Solution:

Considering the given full adder circuit as shown below:
C
B SUM
A D
E
CARRY
F

Comparing the “SUM and CARRY” outputs for all input combinations with and without
fault.
Inputs Output (Without fault) Outputs (with fault)

A B C SUM CARRY SUM CARRY

0 0 0 0 0 1 0

0 0 1 1 0 0 1

0 1 0 1 0 1 0

0 1 1 0 1 0 1

1 0 0 1 0 1 0

1 0 1 0 1 0 1

1 1 0 0 1 1 1

1 1 1 1 1 0 1

From the above truth table, it is clear that, both the outputs (SUM and CARRY) have
been disturbed due to the fault. It is given in the question that, only at one of the
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38 | ESE 2018 : MAINS TEST SERIES

intermediate connections (D, E, F ), stuck at fault has been occurred.

Only intermediate connection in the given circuit, that can propagate to both the outputs
(SUM and CARRY) is “D ”.
So, the stuck-at fault is occurred at the intermediate connection “D ”.
To determine the type of stuck-at fault at D :
The logical expression for SUM and CARRY in terms of inputs and D, under no fault
condition, can be written as follows:
(SUM)NF = C ⊕ D ...(i)
(CARRY)NF = AB + CD ...(ii)
The minimised logical expressions for SUM and CARRY with fault, can be written as
follows:
K-map for (SUM) F K-map for (CARRY)F
BC BC
A BC BC BC BC A BC BC BC BC
0 1 3 2 0 1 3 2
A 1 1 A 1 1
4 5 7 6 4 5 7 6
A 1 1 A 1 1 1

(SUM)F = C ...(iii)
(CARRY) F = AB + C ...(iv)
From the equations (i), (ii), (iii) and (iv), it is clear that, when we put D = 1, the logical
expressions for SUM and CARRY under no fault condition will converge to the logical
expressions for SUM and CARRY with fault.
So, the type of stuck-at fault occurred at “D ” is stuck-at-1.
Fault location : Intermediate connection “D ”.
Type of fault : Stuck-at-1.

Q.8 (a) Solution:

(i) The intensity variation of the photon flux penetrating into a material can be expressed
as,
Iv(x) = I v0e –αx
α = absorption coefficient of the material at given λ
The total energy absorbed in the sample per second can be given by,
Pabsorbed = Pincident (1 – e –αW )
Given that, α = 105 cm–1 and W = 5 μm.

⎡ − (105 × 5 × 10 − 4 ) ⎤
So, Pabsorbed = 10 ⎢ 1 − e ⎥ mW = 511.46 μW
⎣ ⎦

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 Test No : 6 E & T ENGINEERING | 39
(ii) % of the energy absorbed by the material is converted to the heat can be given by,

hν − E g 2 − 1.1
% conversion = × 100% = × 100% = 45%
hν 2
So, the energy per second dissipated as heat by the material will be,
Pheat = 0.45 Pabsorbed = 230.16 μW
(iii) The amount of the energy, out of total energy absorbed, per second that contributes
for the EHPs generation will be,
Pgeneration = Pabsorbed – Pheat = 281.3 μW
Each photon have an energy of hν and each photon can generate one EHP. So, the
EHPs generated in the sample per second can be given by,

281.3 × 10 −6
N = s −1 ∵ 2 eV = 2 × 1.6 × 10–19 J
−19
2 × 1.6 × 10

≈ 8.8 × 1014 s–1

Q.8 (b) Solution

+10 V

+ +
VEB VEB
– –
Q1 Q2 Q3 Q4

I2 I3
+ V0 –
I1 I4
+ +
1 kΩ D1 VD VD D2 4 kΩ
1 2
– –

V 0 = VD 1 – VD 2
⎛I ⎞
now, VD 1 = VT ln ⎜ 2 ⎟
⎝ Is ⎠
⎛ I3 ⎞
VD 2 = VT ln ⎜ ⎟
⎝ Is ⎠
⎛ I2 ⎞
V 0 = VD 1 – VD 2 = VT ln ⎜ I ⎟
⎝ 3⎠

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40 | ESE 2018 : MAINS TEST SERIES

Now, I1 can be calculated by applying KVL at transistor Q1, we get,

10 − VEB 10 − 0.7
I1 = = = 9.3 mA
1k 1k
Now, I1 = I2 because of current mirror circuit.
∴ I2 = 9.3 mA
for transistor Q4
10 − 0.7
I4 = = 2.325 mA
4 × 103

thus, I3 = I4 = 2.325 mA
−3 ⎛ 9.3 ⎞
∴ V 0 = 26 × 10 × ln ⎜ ⎟ = 26 ln (4) mV
⎝ 2.325 ⎠
V 0 = 36.04 mV

Q.8 (c) Solution

• By minimizing the given functions using K-map, we get,
K -map for F1 K-map for F2
BC BC
A BC BC BC BC A BC BC BC BC
0 1 3 2 0 1 3 2
A 1 1 BC A 1 1 AB
6
AC 4 5 7 6
4 5 7
A 1 1 A 1 1 AB

A BC

K -map for F3 K-map for F4

BC BC
A BC BC BC BC A BC BC BC BC
0 1 3 2 0 1 3 2
A 1 BC A 1 1 1 AB
4 5 7 6 4 5 7 6
A 1 A 1 1 C

F1 = AC + BC + ABC ⎫
⎪ design is not possible. because,
F2 = AB + AB ⎪
⎬ 7 unique product terms ⇒ with the given PLA IC, only 6 unique
F3 = BC ⎪ minterms are possible to form
F4 = C + AB ⎪⎭

F4 = (C + A B) = AC + BC

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 Test No : 6 E & T ENGINEERING | 41

F1 , F2 , F3 , F4 ⇒ 6 unique product terms ⇒ design is possible.

Programming table:

Inputs Outputs
Product term
A B C F1 F2 F3 F4

1 – 0 1 – – 1
AC

– 1 0 1 – 1 – – : No connection
BC

ABC 0 0 1 1 – – – 1 : Connection to the variable

0 0 – – 1 – – 0 : Connection to the complement of variable

AB

AB 1 1 – – 1 – –

BC – 0 0 – – – 1

Implementation:
A B C

Programmable OR array

AC

BC

ABC

0
AB 1

AB F4

BC F3

Programmable AND array

F2
F1 F2 F3 F4

: Indicates the connection

F1



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