NGTB40N60FLWG

IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.

Features http://onsemi.com
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation 40 A, 600 V
• Soft Fast Reverse Recovery Diode VCEsat = 1.85 V
• Optimized for High Speed Switching
C
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Solar Inverters G
• Uninterruptable Power Supply (UPS)
E
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage VCES 600 V
Collector current IC A
@ TC = 25°C 80
@ TC = 100°C 40
G TO−247
Pulsed collector current, Tpulse ICM 160 A C
E CASE 340L
limited by TJmax STYLE 4
Diode Forward Current IF A
@ TC = 25°C 80
@ TC = 100°C 40 MARKING DIAGRAM
Diode Pulsed Current IFM 160 A
Tpulse Limited by TJmax

Short−circuit withstand time tSC 5 ms

VGE = 15 V, VCE = 300 V,
TJ ≤ +150°C
40N60FL
Gate−emitter voltage VGE $20 V AYWWG
Transient Gate Emitter Voltage $30
(tp = 5 ms, D < 0.010)
Power Dissipation PD W
@ TC = 25°C 257
@ TC = 100°C 102
Operating junction temperature TJ −55 to +150 °C
range A = Assembly Location
Y = Year
Storage temperature range Tstg −55 to +150 °C WW = Work Week
G = Pb−Free Package
Lead temperature for soldering, 1/8” TSLD 260 °C
from case for 5 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum ORDERING INFORMATION
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the Device Package Shipping
Recommended Operating Conditions may affect device reliability.
NGTB40N60FLWG TO−247 30 Units / Rail
(Pb−Free)

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

July, 2013 − Rev. 0 NGTB40N60FLW/D
 NGTB40N60FLWG

THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT RqJC 0.470 °C/W
Thermal resistance junction−to−case, for Diode RqJC 1.06 °C/W
Thermal resistance junction−to−ambient RqJA 40 °C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage, VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V
gate−emitter short−circuited

Collector−emitter saturation voltage VGE = 15 V, IC = 40 A VCEsat 1.6 1.85 2.1 V

VGE = 15 V, IC = 40 A, TJ = 150°C − 2.3 −

Gate−emitter threshold voltage VGE = VCE, IC = 200 mA VGE(th) 4.5 5.5 6.5 V
Collector−emitter cut−off current, gate− VGE = 0 V, VCE = 600 V ICES − − 0.2 mA
emitter short−circuited VGE = 0 V, VCE = 600 V, TJ = 150°C − − 2

Gate leakage current, collector−emitter VGE = 20 V , VCE = 0 V IGES − − 100 nA

short−circuited

DYNAMIC CHARACTERISTIC
Input capacitance Cies − 4200 − pF
Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 170 −
Reverse transfer capacitance Cres − 110 −
Gate charge total Qg − 171 − nC
Gate to emitter charge VCE = 480 V, IC = 40 A, VGE = 15 V Qge − 36 −

Gate to collector charge Qgc − 83 −

SWITCHING CHARACTERISTIC, INDUCTIVE LOAD

Turn−on delay time td(on) − 85 − ns
Rise time tr − 37 −
Turn−off delay time TJ = 25°C td(off) − 174 −
Fall time VCC = 400 V, IC = 40 A tf − 73 −
Rg = 10 W
Turn−on switching loss VGE = 0 V/ 15 V Eon − 0.89 − mJ
Turn−off switching loss Eoff − 0.44 −
Total switching loss Ets − 1.33 −
Turn−on delay time td(on) − 82 − ns
Rise time tr − 38 −
Turn−off delay time TJ = 150°C td(off) − 179 −
Fall time VCC = 400 V, IC = 40 A tf − 95 −
Rg = 10 W
Turn−on switching loss VGE = 0 V/ 15 V Eon − 1.10 − mJ
Turn−off switching loss Eoff − 0.84 −
Total switching loss Ets − 1.94 −

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit
DIODE CHARACTERISTIC
Forward voltage VGE = 0 V, IF = 40 A VF 1.55 2.2 2.60 V
VGE = 0 V, IF = 40 A, TJ = 150°C − 2.3 −

Reverse recovery time trr − 77 − ns

TJ = 25°C
Reverse recovery charge IF = 40 A, VR = 200 V Qrr − 0.35 − mC
diF/dt = 200 A/ms
Reverse recovery current Irrm − 7 − A

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TYPICAL CHARACTERISTICS
200 180 VGE = 17 V to 13 V
180 TJ = 25°C TJ = 150°C
VGE = 17 V to 13 V 160
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

160
140
140
120
120
100
100 11 V 11 V
80
80
60 10 V
60 10 V
40 40 9V
9V
20 20 8V
7V 8V
0 0 7V
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics Figure 2. Output Characteristics

180 160
VGE = 17 V to 13 V TJ = −55°C
160 140
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)

140 120 TJ = 25°C

120 TJ = 150°C
11 V 100
100
80
80
60
60 10 V
40 40

20 9V 20
7 V to 8 V
0 0
0 1 2 3 4 5 6 7 8 0 4 8 12 16
VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V)

3.0 10,000
IC = 60 A Cies
2.5 IC = 40 A
CAPACITANCE (pF)

2.0 1000
IC = 20 A
1.5
IC = 5 A
Coes
1.0 100

Cres
0.5

0 10
−75 −50 −25 0 25 50 75 100 125 150 175 200 0 20 40 60 80 100
TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance

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TYPICAL CHARACTERISTICS

70 20

VGE, GATE−EMITTER VOLTAGE (V)

60
IF, FORWARD CURRENT (A)

15 VCE = 480 V
50

40 TJ = 25°C
10
30 TJ = 150°C

20
5 VCE = 400 V
10 VGE = 15 V
IC = 40 A
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 175 200
VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge

1.4 1000

1.2 Eon
td(off)
SWITCHING LOSS (mJ)

SWITCHING TIME (ns)

1 td(on)
100
Eoff tf
0.8 tr

0.6
VCE = 400 V 10
0.4
VGE = 15 V VCE = 400 V
IC = 40 A VGE = 15 V
0.2
Rg = 10 W IC = 40 A
Rg = 10 W
0 1
0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature

2.5 1000
VCE = 400 V
VGE = 15 V
2 TJ = 150°C Eon td(off)
SWITCHING LOSS (mJ)

SWITCHING TIME (ns)

Rg = 10 W
100 tf
1.5 td(on)

Eoff
1 tr
10
VCE = 400 V
0.5 VGE = 15 V
TJ = 150°C
Rg = 10 W
0 1
5 20 35 50 65 80 5 20 35 50 65 80
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC

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TYPICAL CHARACTERISTICS
4.5 1000
VCE = 400 V
4 VGE = 15 V td(off) td(on)
3.5 IC = 40 A
SWITCHING LOSS (mJ)

Eon

SWITCHING TIME (ns)

TJ = 150°C tf
3 100
tr
2.5
2
Eoff
1.5 10
VCE = 400 V
1 VGE = 15 V
0.5 IC = 40 A
TJ = 150°C
0 1
5 15 25 35 45 55 65 75 85 5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg

2.4 1000
VGE = 15 V
IC = 40 A
Rg = 10 W td(off)
SWITCHING LOSS (mJ)

SWITCHING TIME (ns)

1.8 Eon
TJ = 150°C tf
100
td(on)
1.2 tr
Eoff

10
VGE = 15 V
0.6
IC = 40 A
Rg = 10 W
TJ = 150°C
0 1
175 225 275 325 375 425 475 525 575 175 225 275 325 375 425 475 525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE

1000 1000
100 ms
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

100 50 ms
1 ms
100
10 dc operation

1
Single Nonrepetitive 10
Pulse TC = 25°C
0.1 Curves must be derated
linearly with increase
in temperature VGE = 15 V, TC = 125°C
0.01 1
1 10 100 1000 1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area

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TYPICAL CHARACTERISTICS
1

50% Duty Cycle RqJC = 0.470

20% Ri (°C/W) ti (sec)

0.1
0.007192 0.000139
R(t) (°C/W)

10% 0.000100 0.031623

Duty Factor = t1/t2 0.010280 0.000973
5%
Peak TJ = PDM x ZqJC + TC 0.010881 0.002906
2% 0.033233 0.003009
0.01 Junction R1 R2 Rn Case 0.020448 0.015465
0.000100 10.0000
0.041319 0.076534
Ci = ti/Ri
Single Pulse 0.027633 0.361892
0.000100 316.228
C1 C2 Cn 0.309198 0.323417
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance

10

RqJC = 1.06
1 50% Duty Cycle

20%
R(t) (°C/W)

Junction R1 R2 Rn Case Ri (°C/W) ti (sec)

0.1
10% 0.20043 1.48E−4
0.42428 0.002
5% Ci = ti/Ri
0.51036 0.03
2% 0.34767 0.1
0.01 C1 C2 Cn 0.11135 2.0
1%
Duty Factor = t1/t2
Single Pulse
Peak TJ = PDM x ZqJC + TC
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
Figure 20. Diode Transient Thermal Impedance

Figure 21. Test Circuit for Switching Characteristics

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PACKAGE DIMENSIONS

TO−247
CASE 340L−02
ISSUE F

−T− NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
−B− 2. CONTROLLING DIMENSION: MILLIMETER.
E
MILLIMETERS INCHES
U L
DIM MIN MAX MIN MAX
A 20.32 21.08 0.800 8.30
N B 15.75 16.26 0.620 0.640
4
C 4.70 5.30 0.185 0.209
A D 1.00 1.40 0.040 0.055
−Q− E 1.90 2.60 0.075 0.102
1 2 3 0.63 (0.025) M T B M F 1.65 2.13 0.065 0.084
G 5.45 BSC 0.215 BSC
H 1.50 2.49 0.059 0.098
P J 0.40 0.80 0.016 0.031
−Y− K 19.81 20.83 0.780 0.820
L 5.40 6.20 0.212 0.244
K N 4.32 5.49 0.170 0.216
P --- 4.50 --- 0.177
Q 3.55 3.65 0.140 0.144
U 6.15 BSC 0.242 BSC
W 2.87 3.12 0.113 0.123
W J
F 2 PL H
STYLE 4:
PIN 1. GATE
G 2. COLLECTOR
D 3 PL 3. EMITTER
4. COLLECTOR
0.25 (0.010) M Y Q S

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