Vishay Semiconductors

Symbols
Arrangement of Symbols The following table summarizes the rules given
above.
Letter symbols for current, voltage and power
Basic letter
(according to DIN 41 785, sheet 1)
Upper-case Upper-case
To represent current, voltage and power, a system of Electrical parameters inherent Electrical parameters of
basic letter symbols are used. Capital letters are used in the semiconductor devices external circuits and of circuits
for the representation of peak, mean, dc or root- except inductances and in which the semiconductor
mean-square values. Lower case letters are used for capacitances device forms only a part; all
the representation of instantaneous values which inductances and capacitances
vary with time. Subscript(s)
Capital letters are used as subscripts to represent Upper-case Upper-case
continuous or total values, while lower case letters are Small-signal values Static (dc) values
used to represent varying values.
The following table summarizes the rules given Examples:
above. RG Generator resistance
Basic letter GP Power gain
Upper-case Upper-case hFE DC forward current transfer ratio in
Instantaneous values which Maximum (peak) average
vary with time (mean) continuous (dc) or root-
common emitter configuration
mean-square (RMS) values rP Parallel resistance, damping resistance
Subscript(s)
Upper-case Upper-case Example for the use of Symbols
Varying component Continuous (without signal) or according to 41785 and IEC 148
alone,i.e.,instantaneous, total (instantaneous, average or
root-mean-square, maximum maximum) values b) Diode
or average values
VF
Letter symbols for impedance, admittances,
VFSM
two-port parameters etc.
VFRM
For impedance, admittance, two-port parameters, VFWM
etc., capital letters are used for the representation of
external circuits of which the device is only a part.
Lower case letters are used for the representation of 0
electrical parameters inherent in the device. t
The rules are not valid for inductance and capaci- VRWM
tance. Both these quantities are denoted with capital VRRM
letters. VRSM
Capital letters are used as subscripts for the designa-
tion of static (dc) values, while lower case letters are VR 93 7796
used for the designation of small-signal values. Figure 1.
If more than one subscript is used (hFE, hfe), the letter
symbols are either all capital or all lower case. VF Forward voltage
If the subscript has numeric (single, double, etc.) as VR Reverse voltage
well as letter symbol(s) (such as h21E or h21e), the dif-
VFSM Surge forward voltage (non-repetitive)
ferentiation between static and small-signal value is
made only by a subscript letter symbol. VRSM Surge reverse voltage (non-repetitive)
Other quantities (values) which deviate from the VFRM Repetitive peak forward voltage
above rules are given in the list of letter symbols. VRRM Repetitive peak reverse voltage
VFWM Crest working forward voltage
VRWM Crest working reverse voltage

Document Number 84056 www.vishay.com

Rev. 1.2, 20-Jan-04 589
Vishay Semiconductors

List of Symbols RthJA Thermal resistance between junction and

A Anode ambient
a Distance (in mm) RthJC Thermal reistance between junction and case
C Capacitance, general rz Differential Z-resistance in breakdown region
(range) rz = rzj + rzth
Ccase Case capacitance
rzj Z-resistance at constant junction temperature,
CD Diode capacitance
inherent Z-resistance
Ci Junction capacitance
rzth Thermal part of the Z-resistance
CL Load capacitance
T Temperature, measured in centigrade
CP Parallel capacitance
T Absolute temperature, Kelvin temperature
F Noise figure
T Period duration
f Frequency
Tamb Ambient temperature (range)
fg Cut-off-frequency
Tcase Case temperature
IF Forward current
tfr Forward recovery time
iF Forward current, instantaneous total value
Tj Junction temperature
IFAV Average forward current, rectified current
TK Temperature coefficient
IFRM Repetitive peak forward current
TL Connecting lead temperature in the holder (sol-
IFSM Surge forward current, non-repetitive dering point) at the distance/(mm) from case
IFWM Crest working forward current tP Pulse duration (time)
IR Reverse current tp/T Duty cycle
iR Reverse current, instantaneous total value tr Rise time
IRAV Average reverse current trr Reverse recovery time
IRRM Repetitive peak reverse current ts Storage time
IRSM Non-repetitive peak reverse current Tsd Soldering temperature
IRWM Crest working reverse current Tstg Storage temperature (range)
IS Supply current V(BR) Breakdown voltage
IZ Z-operating current VF Forward voltage
IZM Z-maximum current VF Forward voltage, instantaneous total value
l Length (in mm), (case-holder/soldering point) VFAV Average forward voltage
LOCEP (local epitaxy) Vo Rectified voltage
A registrated trade mark of Vishay for a process ofepi- VFSM Surge forward voltage, non-repetitive
taxial deposition on silicon. Applications occur in
VFRM Repetitive peak forward voltage
planer Z-diodes. It has an advantage compared to the
normal process, with reduced reverse current. VFWM Crest working forward voltage
P Power VR Reverse voltage
Ptot Total power dissipation VR Reverse voltage, instantaneous total value
PV Power dissipation, general VRSM Surge reverse voltage, non-repetitive
Pvp Pulse-power dissipation VRRM Repetitive peak reverse voltage
Q Quality VRWM Crest working reverse voltage
Qrr Reverse recovery charge VZ Z-operating voltage
RF Forward resistance Zthp Thermal resistance – pulse operation
rf Differential forward resistance ηr Rectification efficiency
RL Load resistor ΔCD Capacitance deviation
rP Parallel resistance, damping resistance
RR Reverse resistance
rr Differential reverse resistance
rs Series resistance

www.vishay.com Document Number 84056

590 Rev. 1.2, 20-Jan-04