UNISONIC TECHNOLOGIES CO.

, LTD
50N06 Power MOSFET

50A, 60V N-CHANNEL

POWER MOSFET
1 1
 DESCRIPTION TO-220 TO-220F
The UTC 50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt. 1
It is mainly suitable electronic ballast, and low power switching 1
mode power appliances. TO-220F1 TO-220F3
 FEATURES
* RDS(ON) ≤ 23mΩ @ VGS=10V, ID=25A
* Fast switching capability
1
* 100% avalanche energy specified
* Improved dv/dt capability TO-263

 SYMBOL
2.Drain

1.Gate

3.Source

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
50N06L-TA3-T 50N06G-TA3-T TO-220 G D S Tube
50N06L-TF1-T 50N06G-TF1-T TO-220F1 G D S Tube
50N06L-TF3-T 50N06G-TF3-T TO-220F G D S Tube
50N06L-TF3T-T 50N06G-TF3T-T TO-220F3 G D S Tube
50N06L-TQ2-T 50N06G-TQ2-T TO-263 G D S Tube
50N06L-TQ2-R 50N06G-TQ2-R TO-263 G D S Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source

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50N06 Power MOSFET

 MARKING

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50N06 Power MOSFET

 ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current ID 50 A
Pulsed Drain Current (Note 2) IDM 150 A
Avalanche Energy Single Pulsed (Note 3) EAS 205 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 3.6 V/ns
TO-220/TO-263 120 W
Power Dissipation (TC=25°C) TO-220F/TO-220F1 P D
70 W
TO-220F3
Junction Temperature TJ +150 °C
Operation and Storage Temperature TSTG -55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=0.1mH, IAS=64A, VDD= 25V, RG=20Ω, Starting TJ=25°C
4. ISD ≤30A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
 THERMAL DATA
PARAMETER SYMBOL RATING UNIT
TO-220/TO-220F
Junction to Ambient TO-220F1/TO-220F3 θJA 62 °C/W
TO-263
TO-220 1.24 °C/W
TO-220F/TO-220F1
Junction to Case θJC 1.78 °C/W
TO-220F3
TO-263 1.24 °C/W

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50N06 Power MOSFET

 ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 60 V
Drain-Source Leakage Current IDSS VDS=60V, VGS=0V 10 μA
Forward VGS=20V, VDS=0V 100 nA
Gate-Source Leakage Current IGSS
Reverse VGS=-20V, VDS=0V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=25A 23 mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 1200 pF
Output Capacitance COSS VGS=0V, VDS=25V, f=1MHz 580 pF
Reverse Transfer Capacitance CRSS 180 pF
SWITCHING CHARACTERISTICS
Total Gate Charge QG 145 nC
VDS=50V, VGS=10V, ID=1.3A
Gate-Source Charge QGS 10 nC
IG=100μA (Note1,2)
Gate-Drain Charge QGD 36 nC
Turn-On Delay Time tD(ON) 18 ns
Turn-On Rise Time tR VDD=30V, VGS=10V, ID=50A, 84 ns
Turn-Off Delay Time tD(OFF) RG=25Ω (Note1,2) 62 ns
Turn-Off Fall Time tF 48 ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
IS 50 A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 150 A
Forward Current
Drain-Source Diode Forward Voltage VSD IS=50A, VGS=0V 1.5 V
Reverse Recovery Time trr IS=30A, VGS=0V 90 ns
Reverse Recovery Charge Qrr dIF/dt=100A/μs 260 nC
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature

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50N06 Power MOSFET

 TEST CIRCUITS AND WAVEFORMS

Peak Diode Recovery dv/dt Test Circuit

Gate Pulse Width

VGS D=
Gate Pulse Period 10V
(Driver)

IFM, Body Diode Forward Current

ISD
(DUT) di/dt

IRM

Body Diode Reverse Current

VDS
(DUT) Body Diode Recovery dv/dt

VSD VDD

Body Diode Forward

Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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50N06 Power MOSFET
 TEST CIRCUITS AND WAVEFORMS

Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms

VGS
Same Type
as D.U.T.
QG

VDS
QGS QGD

VGS
DUT

Charge

Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform

Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

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50N06 Power MOSFET

 TYPICAL CHARACTERISTICS

Drain Current, ID (A)

Drain Current, ID (A)

On-Resistance Variation vs. On State Current vs.

Drain Current and Gate Voltage Allowable Case Temperature

102
Reverse Drain Current, ISD (A)

70
Resistance,RDS(ON) (mΩ)
Drain to Source On-

60
50 150°C
40
101 25°C
30
VGS=10V
20 *Note:
VGS=20V 1. VGS=0V
10
2. 250µs Test
0 100
0 20 30 40 50 60 70 80 90100 120140160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Drain Current, ID (A) Source-Drain Voltage, VSD (V)

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50N06 Power MOSFET
 TYPICAL CHARACTERISTICS(Cont.)

Breakdown Voltage Variation vs. On-Resistance Variation vs.

Junction Temperature Junction Temperature

Drain-Source On-Resistance, RDS(ON),

1.2 3.0
Drain-Source Breakdown Voltage,

2.5
1.1
BVDSS(Normalized)

2.0

(Normalized)
1.0 1.5

1.0
0.9 *Note: *Note:
0.5 1. VGS=10V
1. VGS=0V
2. ID=250µA 2. ID=25A
0.8 0.0
-100 -50 0 50 100 150 200 -50 0 50 100 150
Junction Temperature, TJ (°C) Junction Temperature, TJ (°C)

Maximum Drain Current vs.

Maximum Safe Operating
3
Case Temperature
10 Operation in This 50
Area by RDS (on)
100µs 40
Drain Current, ID (A)
Drain Current , ID,(A)

102
1ms
30
10ms
1
10
10ms
20
*Note:
100
1. Tc=25°C 10
2. TJ=150°C
-1 3. Single Pulse
10 0
10-1 100 101 102 25 50 75 100 125 150
Drain-Source Voltage, VDS (V) Case Temperature, TC (°C)
Thermal Response, ZθJC (t)

Capacitance, C (pF)

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50N06 Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

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