TSM024NA04LCR

Taiwan Semiconductor

N-Channel Power MOSFET

40V, 170A, 2.4mΩ

FEATURES KEY PERFORMANCE PARAMETERS

● Low RDS(ON) to minimize conductive losses PARAMETER VALUE UNIT
● Logic level
VDS 40 V
● Low gate charge for fast power switching
● 100% UIS and Rg tested RDS(on) VGS = 10V 2.4
mΩ
● Compliant to RoHS directive 2011/65/EU and in (max) VGS = 4.5V 3
accordance to WEEE 2002/96/EC
Qg 33 nC
● Halogen-free according to IEC 61249-2-21

APPLICATIONS
● BLDC Motor Control
● Battery Power Management
● DC-DC converter
● Secondary Synchronous Rectification
PDFN56

Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20 V
(Note 1) TC = 25°C 170
Continuous Drain Current ID A
TA = 25°C 25
Pulsed Drain Current IDM 680 A
(Note 2)
Single Pulse Avalanche Current IAS 48 A
(Note 2)
Single Pulse Avalanche Energy EAS 346 mJ
TC = 25°C 125
Total Power Dissipation PD W
TC = 125°C 25
TA = 25°C 2.6
Total Power Dissipation PD W
TA = 125°C 0.5
Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 °C

THERMAL PERFORMANCE
PARAMETER SYMBOL LIMIT UNIT
Junction to Case Thermal Resistance RӨJC 1 °C/W
Junction to Ambient Thermal Resistance RӨJA 48 °C/W
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.

1 Version: B1611
 TSM024NA04LCR
Taiwan Semiconductor

ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)

PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT
Static
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 40 -- -- V
Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1.2 1.7 2.5 V
Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA
VGS = 0V, VDS = 40V -- -- 1
Drain-Source Leakage Current VGS = 0V, VDS = 40V IDSS µA
-- -- 100
TJ = 125°C
Drain-Source On-State Resistance VGS = 10V, ID = 25A -- 1.8 2.4
(Note 3) RDS(on) mΩ
VGS = 4.5V, ID = 25A -- 2.2 3
(Note 3)
Forward Transconductance VDS = 5V, ID = 25A gfs -- 50 -- S
(Note 4)
Dynamic
VGS = 10V, VDS = 20V,
Total Gate Charge Qg -- 67 --
ID = 25A
Total Gate Charge Qg -- 33 -- nC
VGS = 4.5V, VDS = 20V,
Gate-Source Charge Qgs -- 12 --
ID = 25A
Gate-Drain Charge Qgd -- 11 --
Input Capacitance Ciss -- 4224 --
VGS = 0V, VDS = 20V
Output Capacitance Coss -- 696 -- pF
f = 1.0MHz
Reverse Transfer Capacitance Crss -- 206 --
Gate Resistance f = 1.0MHz Rg 0.4 1.3 2.6 Ω
(Note 4)
Switching
Turn-On Delay Time td(on) -- 8.4 --
Turn-On Rise Time VGS = 10V, VDS = 20V, tr -- 3.6 --
ns
Turn-Off Delay Time ID = 25A, RG = 2Ω, td(off) -- 32.6 --
Turn-Off Fall Time tf -- 7.8 --
Source-Drain Diode
(Note 3)
Forward Voltage VGS = 0V, IS = 25A VSD -- -- 1.2 V
Reverse Recovery Time IS = 25A , trr -- 39 -- ns
Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 45 -- nC
Notes:
1. Silicon limited current only.
2. L = 0.3mH, VGS = 10V, VDD = 25V, RG = 25Ω, IAS = 48A, Starting TJ = 25°C
3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
4. Switching time is essentially independent of operating temperature.

ORDERING INFORMATION

PART NO. PACKAGE PACKING

TSM024NA04LCR RLG PDFN56 2,500pcs / 13” Reel

2 Version: B1611
 TSM024NA04LCR
Taiwan Semiconductor

CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)

Output Characteristics Transfer Characteristics

40 40

VGS=3V
ID, Drain Current (A)

ID, Drain Current (A)

30 30
VGS=10V
VGS=7V
VGS=5V
20 VGS=4.5V 20
VGS=4V
VGS=3.5V

10 10

25℃
150℃
-55℃
0 0
0 1 2 3 4 0 1 2 3 4
VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V)

On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge

RDS(ON), Drain-Source On-Resistance (Ω)

0.005 10
VGS, Gate to Source Voltage (V)

VDS=20V
0.004 ID=25A
8

0.003 6
VGS=4.5V

0.002 4

VGS=10V
0.001 2

0 0
0 8 16 24 32 40 0 20 40 60 80
ID, Drain Current (A) Qg, Gate Charge (nC)
On-Resistance vs. Junction Temperature On-Resistance vs. Gate-Source Voltage
2 0.01
RDS(on), Drain-Source On-Resistance

RDS(on), Drain-Source On-Resistance (Ω)

1.8 VGS=10V
ID=25A 0.008
1.6
(Normalized)

0.006
1.4

1.2
0.004

1 ID=25A
0.002
0.8

0.6 0
-75 -50 -25 0 25 50 75 100 125 150 3 4 5 6 7 8 9 10
TJ, Junction Temperature (°C) VGS, Gate to Source Voltage (V)

3 Version: B1611
 TSM024NA04LCR
Taiwan Semiconductor

CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)

Capacitance vs. Drain-Source Voltage BVDSS vs. Junction Temperature

5000 1.2

Drain-Source Breakdown Voltage

4500
ID=1mA
CISS
C, Capacitance (pF)

4000

BVDSS (Normalized)
1.1
3500
3000
2500 1
2000
1500
0.9
1000
COSS
500
CRSS
0 0.8
0 10 20 30 40 -75 -50 -25 0 25 50 75 100 125 150
VDS, Drain to Source Voltage (V) TJ, Junction Temperature (°C)

Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage
1000 100
IS, Reverse Drain Current (A)

RDS(ON)
ID, Drain Current (A)

100 10

150℃ 25℃ -55℃

10 1

SINGLE PULSE
RӨJC=1°C/W
TC=25°C

1 0.1
0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2
VDS, Drain to Source Voltage (V) VSD, Body Diode Forward Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
10
Normalized Effective Transient

SINGLE PULSE
Thermal Impedance, ZӨJC

RӨJC=1°C/W

Duty=0.5
Duty=0.2
0.1 Duty=0.1
Duty=0.05
Duty=0.02 Notes:
Duty=0.01 Duty = t1 / t2
Single TJ = TC + PDM x ZӨJC x RӨJC

0.01
0.0001 0.001 0.01 0.1 1
t, Square Wave Pulse Duration (sec)

4 Version: B1611
 TSM024NA04LCR
Taiwan Semiconductor

PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)

PDFN56

SUGGESTED PAD LAYOUT (Unit: Millimeters)

MARKING DIAGRAM

G = Halogen Free
TSC Y = Year Code
024NA04 WW = Week Code (01~52)
GYWWF
F = Factory Code

5 Version: B1611
 TSM024NA04LCR
Taiwan Semiconductor

Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.

6 Version: B1611