:: Chapter-I ::

Semiconductor devices
1. A semiconductor is formed by ……… bonds.

1. Covalent 2. Electrovalent 3.Co-ordinate 4.None of the above

Q2. A semiconductor has ………… temperature coefficient of resistance.

1. Positive 2.Zero 3.Negative 4. None of the above

Q3. The most commonly used semiconductor is ……….

1. Germanium 2. Silicon 3. Carbon 4. Sulphu

Q4. A semiconductor has generally ……………… valence electrons.

1. 2 2. 3 3. 6 4. 4

Q5. The resistivity of pure germanium under standard conditions is about ……….

1. 6 x 104 Ω cm 3. 3 x 106 Ω cm
2. 60 Ω cm 4. 6 x 10-4 Ω cm

Q6. The resistivity of a pure silicon is about ……………

1. 100 Ω cm 3. 3 x 105 Ω m
2. 6000 Ω cm 4. 6 x 10-8 Ω cm

Q7. When a pure semiconductor is heated, its resistance …………..

1. Goes up 3. Remains the same

2. Goes down 4. Can’t say

Q8. The strength of a semiconductor crystal comes from ……..

1. Forces between nuclei 3. Electron-pair bonds

2. Forces between protons 4. None of the abo

Q9. When a pentavalent impurity is added to a pure semiconductor, it becomes ………

1. An insulator 3. p-type semiconductor

2. An intrinsic semiconductor 4. n-type semiconductor
Q10. Addition of pentavalent impurity to a semiconductor creates many ……..

1. Free electrons 3. Valence electrons

2. Holes 4. Bound electrons

Q11. A pentavalent impurity has ………. Valence electrons

1. 3 2. 5 3. 4 4. 6

Q12. An n-type semiconductor is ………

1. Positively charged 3. Electrically neutral

2. Negatively charged 4. None of the above

Q13. A trivalent impurity has …... valence electrons

1. 4 2. 5 3. 6 4. 3

Q14. Addition of trivalent impurity to a semiconductor creates many …….

1. Holes
2. Free electrons
3. Valence electrons
4. Bound electrons

Q15. A hole in a semiconductor is defined as …………….

1. A free electron 3. A free proton

2. The incomplete part of an electron pair 4. A free neutron
bond
Q16. The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.

1. 10 atoms for 108 atoms

2. 1 atom for 108 atoms
3. 1 atom for 104 atoms
4. 1 atom for 100 atoms

Q17. As the doping to a pure semiconductor increases, the bulk resistance of the
semiconductor …………

1. Remains the same 2. Increases 3.Decreases 4.None of the above

Q18. A hole and electron in close proximity would tend to ……….

1. Repel each other 3. Have no effect on each other

2. Attract each other 4. None of the above
Q19. In a semiconductor, current conduction is due to ……..

1. Only holes 3. Holes and free electrons

2. Only free electrons 4. None of the above

Q20. The random motion of holes and free electrons due to thermal agitation is called
……….

1. Diffusion 3. Ionization
2. Pressure 4. None of the above

Q21. A forward biased pn junction diode has a resistance of the order of

1. Ω 2.KΩ 3.MΩ 4.None of the above

Q22. The battery connections required to forward bias a pn junction are ……

1. +ve terminal to p and –ve terminal to n

2. -ve terminal to p and +ve terminal to n
3. -ve terminal to p and –ve terminal to n
4. None of the above

Q23. The barrier voltage at a pn junction for germanium is about ………

3. 5 V 5. Zero
4. 3 V 6. 3 V

Q24. In the depletion region of a pn junction, there is a shortage of …….

1. Acceptor ions 3. Donor ions

2. Holes and electrons 4. None of the above

Q25. A reverse bias pn junction has …………

1. Very narrow depletion layer 3. Very low resistance

2. Almost no current 4. Large current flow

Q26. A pn junction acts as a ……….

1. Controlled switch 2.Bidirectional switch 3.Unidirectional switch 4.None of the above

Q27. A reverse biased pn junction has resistance of the order of

1. Ω 2. KΩ 3. MΩ 4.None of the above

Q28. The leakage current across a pn junction is due to ………….

 1. Minority carriers 2.Majority carriers 3. Junction capacitance 4.None of the above

Q29. When the temperature of an extrinsic semiconductor is increased, the pronounced

effect is on……

1. Junction capacitance
2. Minority carriers
3. Majority carriers
4. None of the above

Q30. With forward bias to a pn junction , the width of depletion layer ………

1. Decreases
2. Increases
3. Remains the same
4. None of the above

Q31. A transistor has …………………

1. one pn junction
2. two pn junctions
3. three pn junctions
4. four pn junctions

Q32. The number of depletion layers in a transistor is …………

1. four
2. three
3. one
4. two

Q33. The base of a transistor is …………. doped

1. heavily
2. moderately
3. lightly
4. none of the above

Q34. The element that has the biggest size in a transistor is ………………..

1. collector
2. base
3. emitter
4. collector-base-junction
Q35. In a pnp transistor, the current carriers are ………….

1. acceptor ions
2. donor ions
3. free electrons
4. holes

Q36. The collector of a transistor is …………. doped

1. heavily
2. moderately
3. lightly
4. none of the above

Q37. A transistor is a …………… operated device

1. current
2. voltage
3. both voltage and current
4. none of the above

Q38. In a npn transistor, ……………. are the minority carriers

1. free electrons
2. holes
3. donor ions
4. acceptor ions

Q39. The emitter of a transistor is ………………… doped

1. lightly
2. heavily
3. moderately
4. none of the above

Q40. In a transistor, the base current is about ………….. of emitter current

1. 25% 2. 20% 3. 35 % 4. 5%

Q41. At the base-emitter junctions of a transistor, one finds ……………

1. a reverse bias 3. low resistance

2. a wide depletion layers 4. none of the above

Q42. The input impedance of a transistor is ………….

 1. high 2. low 3. very high 4. almost zero

Q43. Most of the majority carriers from the emitter ………………..

1. recombine in the base 3. pass through the base region to the

2. recombine in the emitter collector
4. none of the above

Q44. The current IB is …………

1. electron current 3. donor ion current

2. hole current 4. acceptor ion current

Q45. In a transistor ………………..

1. IC = IE + IB 3. IE = IC – IB
2. IB = IC + IE 4. IE = IC + IB

Q46. The value of α of a transistor is ……….

1. more than 1 3. 1
2. less than 1 4. none of the above

Q47. IC = αIE + ………….

1. IB 2. ICEO 3. ICBO 4. βIB

Q48. The output impedance of a transistor is …………….

1. high 2. zero 3. low 4. very low

Q49. In a transistor, IC = 100 mA and IE = 100.2 mA. The value of β is …………

1. 100 2. 50 3. about 1 4. 200

Q50. In a transistor if β = 100 and collector current is 10 mA, then IE is …………

1. 100 mA 3. 110 mA
2. 100.1 mA 4. none of the above
 :: Chapter-II ::
Power supplies

1. In a half wave rectifier, the load current flows for what part of the cycle.

a. 400

b. 900

c. 1800

d. 3600

2. In a full wave rectifier, the current in each diode flows for

a. whole cycle of the input signal

b. half cycle of the input signal

c. more than half cycle of the input signal

d. none of these

3. in a full wave rectifier, if the input frequency is 50 Hz, then output frequency will be

a. 50 Hz

b. 75 Hz

c. 100 Hz

d. 200 Hz

4. In a center tap full wave rectifier, if Vm is the peak voltage between center tap and one
end

of the secondary, the maximum voltage coming across the reverse bias diode is

a. Vm

b. 2 Vm
c. Vm/2

d. Vm/√2

5. The maximum efficiency of full wave rectification is

a. 40.6%

b. 100%

c. 81.2%

d. 85.6%

6. In a bridge type full wave rectifier, if Vm is the peak voltage across the secondary of
the

transformer, the maximum voltage coming across each reverse biased diode is

a. Vm

b. 2 Vm

c. Vm/2

d. Vm/√2

7. To get a peak load voltage of 40V out of a bridge rectifier. What is the approximate
rms

value of secondary voltage?

a. 0 V

b. 14.4 V

c. 28.3 V

d. 56.6 V

8. If the line frequency is 50 Hz, the output frequency of bridge rectifier is

a. 25 Hz

b. 50 Hz
c. 100 Hz

d. 200 Hz

9. The ripple factor of a bridge rectifier is

a. 0.482

b. 0.812

c. 1.11

d. 1.21

10. The bridge rectifier is preferred to an ordinary two diode full wave rectifier because

a. it needs much smaller transformer for the same output

b. no center tap required

c. less PIV rating per diode

d. all the above

11. The basic purpose of filter is to

a. minimize variations in ac input signal

b. suppress harmonics in rectified output

c. remove ripples from the rectified output

d. stabilize dc output voltage

12. The use of a capacitor filter in a rectifier circuit gives satisfactory performance only
when the

load

a. current is high

b. current is low

c. voltage is high
d. voltage is low

13. A half wave rectifier is equivalent to

a. clamper circuit

b. a clipper circuit

c. a clamper circuit with negative bias

d. a clamper circuit with positive bias

14. The basic reason why a full wave rectifier has a twice the efficiency of a half wave
rectifier is

that

a. it makes use of transformer

b. its ripple factor is much less

c. it utilizes both half-cycle of the input

d. its output frequency is double the line frequency

15. In a rectifier, larger the value of shunt capacitor filter

a. larger the peak-to-peak value of ripple voltage

b. larger the peak current in the rectifying diode

c. longer the time that current pulse flows through the diode

d. smaller the dc voltage across the load

16. In a LC filter, the ripple factor,

a. Increases with the load current

b. increases with the load resistance

c. remains constant with the load current

d. has the lowest value

 17. The main reason why a bleeder resistor is used in a dc power supply is that it

a. keeps the supply ON

b. improves voltage regulation

c. improves filtering action

d. both (b) and (c)

18. Which rectifier requires four diodes?

a. half-wave voltage doubler

b. full-wave voltage doubler

c. full-wave bridge circuit

d. voltage quadrupler

Answers

1. (c) 2. (b) 3. (c) 4. (b) 5. (c) 6. (a) 7. (c) 8. (c) 9. (a) 10. (d) 11. (c) 12. (b) 13. (b)
14. (c) 15. (b) 16. (c) 17. (d) 18. (c)

19.A nominal Zener voltage is usually specified in datasheet of Zener diode at a

Value ofreverse current called

A. bench current
B. Zener test current
C. Zenerreverse current
D. floating current

20.Breakdown voltage of zener diode is controlled by the

A. impurities
B. doping level
C. voltage
D. Both a and b
21.Circuit that converts an AC input voltage into a pulsating DC voltage with one
output pulse occurring for each input cycle is called

A. half wave rectifier

B. full wave rectifier
C. amplifier
D. regulator

22.A type of filter that blocks or rejects a range of frequencies lying between a
certain lower frequency and certain higher frequency is called

A. band pass filter

B. band stop filter
C. resistive filter
D. capacitive filter

23.Type of filter that passes frequencies below a certain frequency while rejecting
higher frequencies is called

A. low pass filter

B. high pass filter
C. band pass filter
D. capacitor filter

24.A type of circuit that passes or block certain frequencies to exclusion of others
is called

A. modulator
B. filter
C. demodulator
D. amplifier

25.Capacitor in power supply used to reduce variation of output voltage from a

rectifier is act as

A. filter
B. modulator
C. demodulator
D. amplifier
26.Component that eliminates fluctuations in rectified voltage and produces
arelatively smooth DC voltage is

A. rectifier
B. modulator
C. filter
D. amplifier

27.If Peak input voltage is 100 V than peak output voltage will be

A. 9V
B. 99.3 V
C. 100.7 V
D. 100.3 V

28.If peak voltage of fullwave rectifier is 15 V than average voltage of rectifier

will be

A. 10 V
B. 9.55 V
C. 10.55 V
D. 32 V

29.Rectifier which results an output with a frequency twice input frequency that
pulsates every half cycle of input voltage is

A. halfwave rectifier
B. fullwave rectifier
C. modulator
D. regulator

30.Rectifier allows unidirectional current through load during entire 360° of input
cycle is

A. halfwave rectifier
B. fullwave rectifier
C. multiwave rectifier
D. regulator

31.PIV rating of bridge rectifier is

 A. greater than center tapped configuration
B. less than center tapped configuration
C. equals center tapped configuration
D. infinite in nature

32.PIV of bridge rectifier for practical diode (2 diodes) model is equals to

A. peak output voltage-0.7 V

B. peak output voltage+0.7 V
C. peak secondary voltage-1.4 V
D. peak secondary voltage+1.4 V

33. During positive half cycle of total secondary voltage of bridge rectifier, number
of diodes forward biased are

A. one
B. two
C. three
D. four

34. Average Value of fullwave rectified voltage with a peak Value of 60 V is

equals to

A. 23 V
B. 32.14 V
C. 38.12 V
D. 12.45 V

35. Bridge rectifier consist of

A. 2 diodes
B. 3 diodes
C. 4 diodes
D. 5 diodes

36.A nominal Zener voltage is usually specified in datasheet of Zener diode at a

Value ofreverse current called

A. bench current
B. Zener test current
 C. Zener reverse current
D. floating current

37. In order to keep diode in breakdown region for voltage regulation, we must
obtained

A. maximum forward current

B. minimum forward current
C. minimum reverse current
D. maximum reverse current

38.Breakdown region can be set during manufacturing by carefully controlling the

A. depletion region
B. doping level
C. attenuation
D. drift voltage

39. Breakdown which occurs in both rectifier and Zener diodes at sufficiently high
reverse voltage is

A. Zener breakdown
B. avalanche
C. modulation
D. PIN breakdown

40. Zener diode with breakdown voltage greater than 5 V operate predominantly in

A. avalanche
B. Zener breakdown
C. PIN breakdown
D. Varactor breakdown

41. Device that eliminates fluctuations in rectified voltage and produces a

relatively smooth dc voltage is called

A. Rectifier
B. Regulator
C. Filter
D. Transformer
42. Channel width and channel resistance of JFET can be controlled by varying
gate

A. Current
B. Power
C. Energy
D. Voltage

43. A power supply with an output ripple peak to peak voltage of 10V and a dc
voltage of 100V. ripple factor is

A. 0.001
B. 0.1
C. 0.01
D. 0.0001

44. A current regulator diode maintains a constant

A. Voltage
B. Current
C. Frequency
D. Power

45. Product of rms load current and rms load voltage is equal to

A. Output gain
B. Voltage gain
C. Current gain
D. Output signal power

46. When there is no incident light in photodiode, reverse current is almost

negligible and is called

A. Negligible current
B. Zero current
C. Dark current
D. Small current

47. By increasing Value of filter capacitor or load resistance, ripple factor can be
 A. increased
B. lowered
C. infinite
D. zero

48. Load regulation means that output voltage is constant over range of

A. load current
B. dark current
C. output voltage
D. input voltage

49. A filter in which capacitor connected from rectifier output to ground is called

A. resistor input filter

B. resistor output filter
C. capacitor output filter
D. capacitor input filter

50. If RMS voltage of fullwave bridge rectifier is 115 V than peak primary voltage
is equals to

A. 15.6 V
B. 163 V
C. 123 V
D. 453 V

Chapter III

Special Devices

1.JFET has three terminals, namely …………

1. cathode, anode, grid
2. emitter, base, collector
3. source, gate, drain
4. none of the above
2. A JFET is similar in operation to …………. valve
1. diode
2. pentode
3. triode
4. tetrode
3. A JFET is also called …………… transistor
1. unipolar
2. bipolar
3. unijunction
4. none of the above
4. A JFET is a ………… driven device
1. current
2. voltage
3. both current and voltage
4. none of the above
5. The gate of a JFET is ………… biased
1. reverse
2. forward
3. reverse as well as forward
4. none of the above
6. The gate of a JFET is ………… biased
1. reverse
2. forward
3. reverse as well as forward
4. none of the above
7. The input impedance of a JFET is …………. that of an ordinary
transistor
1. equal to
2. less than
3. more than
4. none of the above
In a p-channel JFET, the charge carriers are …………..
1. electrons
2. holes
3. both electrons and holes
4. none of the above
Answer : 2
Q8. When drain voltage equals the pinch-off-voltage, then drain
current …………. with the increase in drain voltage
1. decreases
2. increases
3. remains constant
4. none of the above
Answer : 3
Q9. If the reverse bias on the gate of a JFET is increased, then width of
the conducting channel …………..
1. is decreased
2. is increased
3. remains the same
4. none of the above
Answer : 1
Q10. A MOSFET has …………… terminals
1. two
2. five
3. four
4. three
Answer : 4
Q11. A MOSFET can be operated with ……………..
1. negative gate voltage only
2. positive gate voltage only
3. positive as well as negative gate voltage
4. none of the above
Answer : 3
Q12. A JFET has ……….. power gain
1. small
2. very high
3. very small
4. none of the above
Answer : 2
Q13. The input control parameter of a JFET is ……………
1. gate voltage
2. source voltage
3. drain voltage
4. gate current
Answer : 1
Q14. A common base configuration of a pnp transistor is analogous to
………… of a JFET
1. common source configuration
2. common drain configuration
3. common gate configuration
4. none of the above
Answer : 3
Q15. A JFET has high input impedance because …………
1. it is made of semiconductor material
2. input is reverse biased
3. of impurity atoms
4. none of the above
Answer : 2
Q16. In a JFET, when drain voltage is equal to pinch-off voltage, the
depletion layers ………
1. almost touch each other
2. have large gap
3. have moderate gap
4. none of the above
Answer : 1
Q17. In a JFET, IDSS is known as …………..
1. drain to source current
2. drain to source current with gate shorted
3. drain to source current with gate open
4. none of the above
Answer : 2
Q18. The two important advantages of a JFET are …………..
1. high input impedance and square-law property
2. inexpensive and high output impedance
3. low input impedance and high output impedance
4. none of the above
Answer : 1
Q19. …………. has the lowest noise-level
1. triode
2. ordinary trnsistor
3. tetrode
4. JFET
Answer : 4
Q20. A MOSFET is sometimes called ………. JFET
1. many gate
2. open gate
3. insulated gate
4. shorted gate
Answer : 3
Q21. Which of the following devices has the highest input impedance?
1. JFET
2. MOSFET
3. Crystal diode
4. ordinary transistor
Answer : 2
Q22. A MOSFET uses the electric field of a ………. to control the channel
current
1. capacitor
2. battery
3. generator
4. none of the above
Answer : 1
Q23. The pinch-off voltage in a JFET is analogous to ………. voltage in a
vacuum tube
1. anode
2. cathode
3. grid cut off
4. none of the above
Answer : 3
Q24. This question will be available soon

Q25. In class A operation, the input circuit of a JFET is ………. biased

1. forward
2. reverse
3. not
4. none of the above
Answer : 2
Q26. If the gate of a JFET is made less negative, the width of the
conducting channel……….
1. remains the same
 2. is decreased
3. is increased
4. none of the above
Answer : 3
Q27. The pinch-off voltage of a JFET is about ……….
1. 5 V
2. 0.6 V
3. 15 V
4. 25 V
Answer : 1

28. Photodiode technology was refined in

A. 1920s
B. 1940s
C. 1950s
D. 1980s

29. As forward current of LED increase, light emission of LED

A. will increase
B. will decrease
C. become zero
D. become infinite

30. When gate to source voltage of common source amplifier is at positive peak,
drain to source voltage will be

A. at positive peak
B. at negative peak
C. infinite
D. zero

31. Forward voltage drop of an LED is greater than

A. 0.5 V
B. 1.2 V
C. 2.4 V
D. 5V
32. In photodiode, when there is no incident light, thereverse current is almost
negligible and is called

A. Zener current
B. dark current
C. photo current
D. PIN current

33. As forward current of LED increase, light emission of LED

A. will increase
B. will decrease
C. become zero
D. become infinite

34. Intrinsically _________________ are a very linear device.

a) Injection lasers
b) DH lasers
c) Gain-guided
d) LED

35. The amount of radiance in planer type of LED structures is

a) Low
b) High
c) Zero
d) Negligible

36. In optical fiber communication, ______________ major types of LED structures are used
a) 2
b) 4
c) 6
d) 3

37. In surface emitter LEDs, more advantage can be obtained by using

a) BH structures
b) QC structures
c) DH structures
d) Gain-guided structure
38. Which transistor is also renowned as ' Insulated Gate Field Effect Transistor' (IG-FET)
?

a. Junction FET
b. Metal- Oxide Semiconductor FET
c. Both a & b
d. None of the above

39. Which are the majority charge carriers in P-channel JFET by enhancing the flow of
current between two N-regions or gates?

a. Holes
b. Electrons
c. Both a & b
d. None of the above

40. Which internally connected region is heavily doped with an impurity by forming
double PN junctions in JFET?

a. Source
b. Drain
c. Gate
d. Channel

41. The passage of majority charge carriers from source to drain terminal takes place
through the channel only after an application of

a. Drain to Source Voltage (VDS)

b. Gate to Source Voltage (VGS)
c. Gate to Gate Voltage (VGG)
d. Drain to Drain Voltage (VDD)

42. According to the symbolic representation of N & P channels , the gate arrow is
always pointed towards ______.

a. P-type material
b. N-type material
c. P-type in P-channel FET & N-type in n-channel FET
d. All of the above

43. On the applicationof VDD to JFET,the biasing strategy of gate to channel at any point
over the channel yields output equal to _______.

a. numerical sum of VDS & VGS ----

b. numerical difference of VDS & VGS
c. numerical product of VDS & VGS
d. numerical division of VDS & VGS

44. Which current is generated due to shorting of gate terminal to source with zero value
of gate-to-source voltage ?

a. Zero-source voltage drain current

b. Zero-drain voltage gate current
c. Zero-source voltage gate current
d. Zero-gate voltage drain current

45. JFET is considered as a voltage controlled device because ______.

a. gate current is controlled by drain voltage
b. drain current is controlled by gate voltage
c. gate current is controlled by source voltage
d. drain current is controlled by source voltage

46. Which type of static characteristics exhibit the relationship between drain current
and gate-to-source voltage for several values of drain-to-source voltage?

a. Drain characteristics
b. Transfer characteristics
c. Both a & b
d. None of the above

47. Which region of drain characteristic displays linearity with the direct variation in
current corresponding to voltage especially for lesser values of drain-to-source voltage
(VDS) by enabling the JFET to act as an ordinary resistor?

a. Breakdown Region
b. Pinch-off Region
c. Ohmic Region
d. Saturation Region

48. Which kind of small signal JFET parameter is also a well-known form of 'Dynamic
Drain Resistance' across the drain and source terminals especially when the operation of
JFET is faciliated in pinch-off region?

a. AC Drain Resistance
b. DC Drain Resistance
c. Ohmic Resistance
d. Transconductance

49. JFET biasing at DC level can be undertaken by _____.

a. Voltage -divider biasing

b. Individual power source biasing
c. Self-biasing
d. All of the above

50. he tremendous increase in the value of input capacitance usually considered as

noxious for high-frequency operations of common source JFET amplifier, is an ultimate
outcome of _______.

a. Aliasing Effect
b. Carson's Effect
c. Miller's Effect
d. Barkheussan's Effect