MMBT4124LT1G

General Purpose Transistor

NPN Silicon

Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com
Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating Symbol Value Unit 1
BASE
Collector−Emitter Voltage VCEO 25 Vdc
Collector−Base Voltage VCBO 30 Vdc
2
Emitter−Base Voltage VEBO 5.0 Vdc EMITTER
Collector Current − Continuous IC 200 mAdc

THERMAL CHARACTERISTICS 3
Characteristic Symbol Max Unit
Total Device Dissipation PD 1
FR−5 Board (Note 1) @TA = 25°C 225 W 2
Derate above 25°C 1.8 mW/°C
SOT−23 (TO−236)
Thermal Resistance, Junction−to−Ambient RJA 556 °C/W CASE 318
STYLE 6
Total Device Dissipation Alumina PD
Substrate (Note 2) @TA = 25°C 300 W
Derate above 25°C 2.4 mW/°C
MARKING DIAGRAM
Thermal Resistance, Junction−to−Ambient RJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
ZC M G
Stresses exceeding Maximum Ratings may damage the device. Maximum
G
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in. ZC = Device Code
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.

ORDERING INFORMATION

Device Package Shipping†

MMBT4124LT1G SOT−23 3000 / Tape & Reel

(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2009 1 Publication Order Number:

August, 2009 − Rev. 2 MMBT4124LT1/D
 MMBT4124LT1G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3) V(BR)CEO 25 − Vdc
(IC = 1.0 mAdc, IE = 0)

Collector−Base Breakdown Voltage V(BR)CBO 30 − Vdc

(IC = 10 Adc, IE = 0)

Emitter−Base Breakdown Voltage V(BR)EBO 5.0 − Vdc

(IE = 10 Adc, IC = 0)

Collector Cutoff Current ICBO − 50 nAdc

(VCB = 20 Vdc, IE = 0)

Emitter Cutoff Current IEBO − 50 nAdc

(VEB = 3.0 Vdc, IC = 0)

ON CHARACTERISTICS
DC Current Gain (Note 3) hFE −
(IC = 2.0 mAdc, VCE = 1.0 Vdc) 120 360
(IC = 50 mAdc, VCE = 1.0 Vdc) 60 −
Collector−Emitter Saturation Voltage (Note 3) VCE(sat) − 0.3 Vdc
(IC = 50 mAdc, IB = 5.0 mAdc)

Base−Emitter Saturation Voltage (Note 3) VBE(sat) − 0.95 Vdc

(IC = 50 mAdc, IB = 5.0 mAdc)

SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product fT 300 − MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Input Capacitance Cibo − 8.0 pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Collector−Base Capacitance Ccb − 4.0 pF

(IE = 0, VCB = 5.0 V, f = 1.0 MHz)

Small−Signal Current Gain hfe 120 480 −

(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k , f = 1.0 kHz)

Current Gain − High Frequency |hfe| −

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 3.0 −
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) 120 480
Noise Figure NF − 5.0 dB
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz)
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.

10 200

7.0
100 ts
5.0 70
CAPACITANCE (pF)

50 td
TIME (ns)

Cibo
3.0 30 tf tr
20
2.0 Cobo
VCC = 3 V
10.0 IC/IB = 10
7.0 VEB(off) = 0.5 V
1.0 5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 1. Capacitance Figure 2. Switching Times

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 MMBT4124LT1G

AUDIO SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE
(VCE = 5 Vdc, TA = 25°C)
Bandwidth = 1.0 Hz
12 14
SOURCE RESISTANCE = 200  f = 1 kHz
IC = 1 mA
10 IC = 1 mA 12
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

10 IC = 0.5 mA
8 SOURCE RESISTANCE = 200 
IC = 0.5 mA IC = 50 A
8
6 IC = 100 A
SOURCE RESISTANCE = 1 k
6
IC = 50 A
4
4

2 SOURCE RESISTANCE = 500  2

IC = 100 A
0 0
0.1 0.2 0.4 1 2 4 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k)
Figure 3. Frequency Variations Figure 4. Source Resistance

h PARAMETERS
(VCE = 10 V, f = 1 kHz, TA = 25°C)

300 100
hoe , OUTPUT ADMITTANCE ( mhos)

50
200
hfe , CURRENT GAIN

20

100 10

70 5

50
2

30 1
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Current Gain Figure 6. Output Admittance

20 10
h re , VOLTAGE FEEDBACK RATIO (X 10-4 )

7.0
10
hie , INPUT IMPEDANCE (kΩ )

5.0
5.0
3.0

2.0 2.0

1.0
1.0
0.5
0.7

0.2 0.5
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. Input Impedance Figure 8. Voltage Feedback Ratio

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 MMBT4124LT1G

STATIC CHARACTERISTICS

2.0
h FE , DC CURRENT GAIN (NORMALIZED)

TJ = +125°C VCE = 1 V

1.0 +25°C

0.7
0.5 -55°C

0.3

0.2

0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 9. DC Current Gain
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0
TJ = 25°C
0.8
IC = 1 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region

1.2 1.0
θV, TEMPERATURE COEFFICIENTS (mV/°C)

TJ = 25°C
1.0 VBE(sat) @ IC/IB = 10 0.5 +25°C to +125°C
VC for VCE(sat)
V, VOLTAGE (VOLTS)

0.8 0
-55°C to +25°C
VBE @ VCE = 1 V
0.6 -0.5

-55°C to +25°C
0.4 -1.0
VCE(sat) @ IC/IB = 10 +25°C to +125°C
0.2 -1.5 VB for VBE(sat)

0 -2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages Figure 12. Temperature Coefficients

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 MMBT4124LT1G

PACKAGE DIMENSIONS

SOT−23 (TO−236)
CASE 318−08
ISSUE AN

NOTES:
D 1. DIMENSIONING AND TOLERANCING PER
SEE VIEW C ANSI Y14.5M, 1982.
3 2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
E HE BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
c
1 2 MILLIMETERS INCHES
b DIM MIN NOM MAX MIN NOM MAX
e 0.25 A 0.89 1.00 1.11 0.035 0.040 0.044
A1 0.01 0.06 0.10 0.001 0.002 0.004
q b 0.37 0.44 0.50 0.015 0.018 0.020
c 0.09 0.13 0.18 0.003 0.005 0.007
D 2.80 2.90 3.04 0.110 0.114 0.120
A E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.081
L L 0.10 0.20 0.30 0.004 0.008 0.012
A1 L1 0.35 0.54 0.69 0.014 0.021 0.029
L1 HE 2.10 2.40 2.64 0.083 0.094 0.104
VIEW C STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR

SOLDERING FOOTPRINT*
0.95
0.95 0.037
0.037

2.0
0.079

0.9
0.035
SCALE 10:1 ǒinches
mm Ǔ

0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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