IPMS MEMS and ASIC design capabilities

Harald Schenk

© Fraunhofer IPMS
IPMS MEMS design capabilities / services

 MEMS design and layout

 in-depth know-how in physical domain simulation, including coupled
domain simulation
 reduced order models
 tools: ANSYS, COMSOL, MATLAB, SIMULINK, MATHEMATICA, CADENCE

 ASIC design and layout

 Complete analog, digital and mixed-signal design & simulation
 integration of actuators and sensors
 MEMS-on-CMOS
 OLED-on-CMOS
 tool: CADENCE

© Fraunhofer IPMS
MEMS simulation process/methodology

geometry,
environment

© Fraunhofer IPMS
MEMS Design: Physical domains

Structural mechanics
stress distribution

 hinges
G E
 cantilevers
 dynamical behaviour
 inertial effects
 optimization Finite Element Analysis: Optimization of
stress distribution in torsional springs
algorithms
optimization
 stress/load analysis
Finite Element Analysis:
 linear and non-linear Model of a mirror plate
effects suspended by 8
distributed spings to
enhance
dynamic mirror flatness

© Fraunhofer IPMS
MEMS Design: Physical domains

Modal analysis (FEM) 2D-Torsional Scanning Mirror

 eigenmode analysis for

wanted und interfering
modes
 flexible modular FEM intended eigenmode interfering eigenmode
model generation for
1D- or 2D-scanning 1D-Translational Mirror
mirrors, translation
mirror
 pre-stress modal
analysis to include
additional nonlinear intended eigenmode interfering eigenmode
constraints

© Fraunhofer IPMS
MEMS Design: Physical domains

Fluid mechanics fluid flow profile and damping force

 friction
 damping
 fluidic flow analysis
 flow profiles
 fluid / structure FEA: Pressure, fluid flow profile and damping force
interaction of out of plane comb electrode fingers
interaction
 non-linear effects
 optimization

FEA: Pressure and fluid flow profile of an resonant

rocking micro plate

© Fraunhofer IPMS
MEMS Design: Physical domains

Electrical field 3D-combfinger capacitance

deflected
 Steady-state current field distribution
conduction analysis
 time-transient electric
field analyses
3D-FEM
 electrical field engaged model
distribution x 10
−14

1.5 3D FEA

 2D- or 3D-FEM-field 2D FEA fit

analytic
hybrid
1
models
C/F

0.5

 capacitance simulation a)

for complex structures 0

0 5 10
θx /o
15 20 25

 electrostatic forces

© Fraunhofer IPMS
 Vo
rs
ch
MEMS Design: Physical domains

la
g
Piezoresistivity piezoresistive sensor

 structure mechanics /
electric interaction
 load dependent
resistance & voltage
 stress-, electric- and FEA: Normal strain in an optimized silicon torsional
spring sensor geometry
current-field
distribution 0

 normal and sheer stress

transducer concepts
 structural and doping j
level optimization  local resistance minima 

FEA: Strain depending current density

© Fraunhofer IPMS
MEMS Design: Physical domains

Piezo electricity
piezo electric bimorph

 electric / structure
mechanics interaction
 multilayered material
stack deformation
profiles
 voltage dependent
deformation of bi- and
multimorph layers
 thermal stress
FEA: Deformation profile of an piezoelectric bimorph
optimization mirror for active focus variation

 layered stack
optimization

© Fraunhofer IPMS
MEMS Design: Physical domains

Optics Bragg mirror

 Bragg mirrors
 AR/HR coatings
 influence of mirror
deformation on optical Stress & temperature compenstated HR bragg mirror
properties 1.0
optical quality infinite stiffness
 point spread function 0.8 distributed springs
conventional design
(PSF) 0.6

MTF
 modulation transfer 0.4

function (MTF) 0.2

0.0
0.0 0.2 0.4 0.6 0.8 1.0
kx / kmax
Point spread function and modulation transfer function

© Fraunhofer IPMS
MEMS Design: Physical domains

Coupled field temperature/resistance change versus Joule

heating (transient)
silicon spring with
high-doped layer AMES-B.10-var-2: Flexure-Heating(86V,tau=0.27µs,)

 magneto-structural 16.0

14.0

12.0

analysis

current / mA
10.0

8.0

6.0

 electro-thermal analysis
4.0

2.0

0.0
0 10 20 30 40 50 60 70

 structural-thermal or 120.0
110.0
100.0

temperature / °C
structural-thermal- 90.0
80.0
70.0

electric analysis
60.0
50.0
40.0
30.0
20.0

 piezoelectric or 6.4
0 10 20 30 40 50 60 70

6.3

piezoresistive analysis

resistance / kOhm
6.2
6.1
6.0
5.9
5.8
5.7

heating 5.6
0 10 20 30 40 50 60 70

expansion time / µs

© Fraunhofer IPMS
MEMS Design: Physical domains

Coupled field simulation of magneto static field

distribution and force

 magneto-structural
analysis
1 contribution
 electro-thermal analysis of
inductance
 structural-thermal or 1 2
structural-thermal-
electric analysis load: current density
 piezoelectric or 2 1
piezoresistive analysis
coil structure on moveable
mirror plate (1) and fixed
frame (2) 2D-simulation in
side view

magnetic force

© Fraunhofer IPMS
System Design

Controller circuit System response

 network based
approach
 system response
network model of
 dynamics the MEMS device

 controller circuit
synthesis

heuristic controller

step response

© Fraunhofer IPMS
ASIC Design: Mixed-signal (analog + digital)

256 data inputs

MEMS ASICs
clock
control control column
signals pixel
unit addressing column
column area
clock
driver
row clock

 Controller Circuits for row

addressing active matrix MOEMS-on-CMOS

38mm
Actuators and Displays 2048 x 512 pixel

active matrix
back-plane
 MOEMS-on-CMOS 15mm
Steuerung mit PC USB

 OLED-on-CMOS
Programmierinterface Schnittstelle
JTAG Projektor-
Demonstrator
Betriebsspannung Netzteil /A1
3...5...12 V

row
 driver ASIC's (voltage, 0 … 200 V DC/DC
200V
FPGA / MSP Quarz
control
logic
driver

current drive) 200 V

Jumper

optimization algorithms
5V

HV - Erzeugung Frequenzteiler
Kanal X Kanal Y
PLL

 Read-Out Circuits for

PLL

Sensors: capacitance, Charging

Amplifier
Charging
Amplifier

magnetic field sensors PD PD

OPV OPV

(Hall), opto sensors (CMOS Gain 10 …20 Gain 10 …20

MEMS
photodiodes)
Piezo Piezo
(optional) (optional)

driver &
Mirror OLED-on-CMOS
(optional)
controller
(micro display)

© Fraunhofer IPMS
ASIC Design: Analog

Sensor integration

 on-chip signal Hall line sensor

acquisition
 integration into
processing Opto ASIC
environment
Sensor signal
 Opto-ASICs conditioner PS2A

 CMOS embedded
magnetic field sensors:
flux gate, Hall
 pressure/temperature
Opto ASIC with embedded
integrated sensor OLED microdisplay with OLED illumination
embedded CMOS photodiodes
circuits

© Fraunhofer IPMS
ASIC Design: Digital

IP Cores

 interfaces
(e. g. MEMS projector
control) MEMS
projector
 controller/processor interface
control
(e. g. embedded micro-
controller MSP430)
RF FE EEPROM
 cryptography Controller MSP430
512

& control logic

 transponder
(e. g. smart RF-ID)
RAM
8kx8 Flash
8kx16 controller/
processor

© Fraunhofer IPMS
Mixed-signal IPMS CMOS Design Portfolio
Technology HV Ana NVM Ø Major application Source
5/2.0μm + + - 6“ MEMS, mixed-sig

1.5μm + + - 6“ mixed-sig, sensor

1.2μm + + + 6“ MEMS Controller, mixed-sig, OLED, sensor,...

I(P)MS
1.0μm - + + 6“ analog, mixed-sig, sensor,...

0.8μm + + + 6“ analog, mixed-sig, MEMS, ...

0.6μm - + + 6“ analog, mixed-sig, digital

1.0μm SOI + + - 6“ analog, mixed-sig, sensor, display

1.0μm + + - 6" OLED-on-CMOS, sensor

silicon
0.6μm + + + 6“ MEMS control, transponder, display, OLED-on-CMOS
foundry
0.35μm + + + 8“ MEMS control, sensor, OLED-on-CMOS

0.18μm + + - 8" sensor, OLED-on-CMOS, display

0.25μm - + - 8“ analog HS I/O (1.25Gbps)

0.18 μm - + - 8“ analog HS I/O (1.25Gbps) customer

0.14 μm - + - 8“ analog HS I/O (1.25Gbps) (IDM)

0.11 μm - + - 8“ analog HS I/O (3.125Gbps)

HV: high voltage MS: mixed-signal/analog Prog.: non-volatile storage Ø: wafer diameter

© Fraunhofer IPMS
Contact

Dr. Harald Schenk

deputy director
Fraunhofer Institute for Photonic Microsystems
Maria-Reiche-Str. 2
D-01109 Dresden
Germany

© Fraunhofer IPMS