Basic Electronics Lab New

EC3102: BASIC ELECTRONICS LABORATORY
LIST OF EXPERIMENTS:
COMPULSORY EXPERIMENTS:
1. Measurement of the following using Cathode Ray Oscilloscope (CRO):

a. DC Voltage
b. Peak & RMS Value of AC Voltage
c. Time Period and Frequency of Periodic Signals (Sine wave, Square wave, Triangular
wave).
1. Verification of Forward and Reverse bias characteristics of a PN junction diode.
2. Verification of Zener diode characteristics and calculation of its dynamic resistance.
3. Measurement of ripple factor with and without filter for Half wave and Full wave
rectifier circuits.
4. Observation of output waveforms of Diode Clipper and Clamper Circuits.
5. Obtaining the frequency response of CE transistor amplifier and measurement of its

bandwidth.
6. Measurement of the h-parameters hie and hfe of a CE transistor amplifier.
7. Verification of the transfer characteristics of JFET and measurement of its voltage

gain.
8. Obtaining the frequency response and measurement of Bandwidth of an inverting

OP-AMP. (Using IC 741).
9. Obtaining the frequency response and measurement of Bandwidth of a non- inverting

10. Design of a differential amplifier using IC 741 OP-AMP and measurement of its
common mode rejection ratio (CMRR).
11. Implementation of different gates using universal gate (NAND gates).

OPTIONAL EXPERIMENTS:
12. Design and realization of an exclusive OR gate using NAND gate (IC 7400)
13. Implementation of the following Boolean Expression using AND Gates (IC 7408):
F = A.B.C.D.E
14. Design of a voltage follower (using IC 741 OP-AMP) & plotting of its frequency
response.
15. Design of a Differentiator circuit (using IC 741 OP-AMP) and observation of its
output waveforms for various input waveforms (Sine wave, Square wave &
Triangular wave).
16. Design of an Integrator circuit (using IC 741 OP-AMP) and observation of its output
waveform for various input waveforms (Sine wave, Square wave & Triangular wave).
17. Measurement of the input impedances for inverting and non- inverting amplifiers with
same voltage gain (using IC 741 OP-AMP).
18. Design of a voltage follower (using IC 741 OP AMP) and plotting of its frequency
response curve.
19. Design of an adder circuit and a subtracter circuit (using IC 741 OP-AMP).
20. Measurement of the phase angle between two signals of the same frequency using
CRO.
21. Measurement of unknown frequencies using Lissajous patterns.
22. Measurement of input and output impedance of a voltage follower (using IC 741 OP-
AMP).
23. Design of a logarithmic amplifier (using IC 741 OP-AMP).
DEPARTMENT
OF
ELECTRONICS AND COMMUNICATION ENGINEERING
BASIC ELECTRONICS LABORATORY
LAB INSTRUCTIONS FOR CARRYING OUT PRACTICAL
ON
MEASUREMENT OF THE FOLLOWING USING CRO:

DC VOLTAGE, PEAK & RMS VALUE OF AC VOLTAGE, TIME PERIOD
AND FREQUENCY OF PERIODIC SIGNALS
(SINE WAVE, SQUARE WAVE, TRIANGULAR WAVE)
BIRLA INSTITUTE OF TECHNOLOGY

MESRA, RANCHI
AIM: Measurement of the following using Cathode Ray Oscilloscope (CRO):

d. DC Voltage
e. Peak & RMS Value of AC Voltage
c. Time Period and Frequency of Periodic Signals
(Sine wave, Square wave, Triangular wave)
INSTRUMENTS:
1. CRO
2. Function generator
3. Power supply
THEORY:
A CRO is an electronic instrument used for seeing the signal waveform on CRO
Screen. From the trace of the signal several measurements can be made.
PROCEDURE:
For DC Voltage measure ment
1. Connect the CRO probes to the output of function generator.
2. Keep frequency of the function generator at zero and amplitude to any value.
3. Get the DC voltage by CRO.
For AC Voltage measure ment:

1. Connect the CRO probes to the output of function generator.
2. Observe the peak values (Vp ) of the wave currently selected.
3. Calculate the RMS value of the ac signal by the given formula Vrms = (Vp /
√2).
4. Observe the Time-Period (T) of the wave selected.
5. Calculate the frequency by f = 1/T.
6. Change the both voltage and time period scale and repeat the step 2 to step 5
for three different readings.
7. Take another waveform (sine/square/triangular) and repeat step 2 to step 6.
OBSERVATIONS:
For DC Voltage:
1. From Function generator: Input frequency = 0 Hz;
2. From CRO:
Scale on Volts/div (Volts) =
No of div. for Voltage =
DC voltage =
For Sine wave measurements:
1. From Function generator:
Input voltage:…….. volts; Input frequency = Hz;
2. From CRO:
Sr. Scale Scale No of div. No of div.

No. on on for Peak for Vp Vrms T Frequency
Volts/ Time/ Voltage Time- =Vp /√2 F
div div Vp Period
(V) (s) T (V) (V) (s) (Hz)
1
2
3
For Square wave measure ments:

Input voltage: volts; Input frequency =Hz;
2. From CRO:

Volts/ Time/ Voltage Time- = p /√2
V F
div div Vp Period
(V) (s) T (V) (V) (s) (Hz)
1
2
3
For Triangular wave measurements:

Input voltage: volts; Input frequency =Hz;
2. From CRO:

Volts/ Time/ Voltage Time- =Vp /√2 F
div div Vp Period
(V) (s) T (V) (V) (s) (Hz)
1
2
3
RESULT:
PRECAUTIONS:
XSC1
XFG1 T
A B
Fig. CIRCUIT FOR STUDY OF CRO

DEPARTMENT
OF
ON
VERIFICATION OF FORWARD AND REVERSE BIAS

CHARACTERISTICS OF PN JUNCTION DIODE

MESRA, RANCHI
AIM: Verification of forward and reverse bias characteristics of a PN junction diode
APPARATUS:
1. Diodes
2. Millimeter
3. Micro ammeter
4. Voltmeter
5. Resistance (220Ω, 560Ω)
6.power supply
7. Connecting wires and breadboard.
THEORY
A p-n junction is formed by combining N-type and P-type semiconductor together in
very close contact. A p- n junction is formed by combining N- type and P-type semiconductor
together in very close contact. At the junction of a p-type and an n-type semiconductor
there forms a region called the depletion region, which have been depleted of the mobile
charges. Since the electrons or holes have left the depletion region, due to diffusion in the
process of formation of p-n junction, this depletion region is electrically charged. The p-
type depletion regions are negatively charged (due to uncompensated acceptor ions) and n-
type depletion regions are positively charged (due to uncompensated donor ions). The
potential difference exists across the depletion region known as „contact potential‟.
The act of applying a voltage across a p- n junction is known as biasing. There are
two ways in which a p-n junction can be biased. One is known as forward biasing. The
other is known as reverse biasing.
In forward biasing, the positive terminal of the battery is connected to the p-side
and negative terminal of the battery is connected to n- side of the diode. In this set up the
conduction across p-n junction takes place due to the migration of the majority charge
carriers. This means electrons migrate from n- side to p- side and the holes migrate from
p- side to n- side. In forward biasing the size of the depletion layer becomes smaller and
the resistance of the p-n junction diode becomes low.
In reverse biasing, the positive terminal of the battery is connected to n- side and
the negative terminal of the battery is connected to p- side of the p-n junction. In the
arrangement, the size of the depletion region becomes large and the resistance of the
diode becomes high.
The graph of voltage applied across the diode (V) versus the current (I) flowing
thru it is called its V-I characteristic. A typical V-I characteristic of a p- n junction diode
is as shown.
IF (mA)
Forward Bias
VR VB
VF
Breakdown Region 0.7V
Reverse Bias
IR (µA)
Procedure:
1. Connect the circuit as shown in figure 1.

2. Bring the variable voltage of the DC source to zero. The current through
milliammeter should also be zero.
3. Increase the variable voltage of the DC source slowly and in steps. Corresponding
to each setting, note down the voltmeter and milliammeter readings.
4. Do not exceed the current beyond the current rating of the diode. This completes
the observation for V-I characteristics of the forward biased diode
5. Plot Current (I) Voltage (V) by choosing proper scales
6. Make the connections as shown in figure 2.
7. Repeat the steps 2 and 3. This completes observation for V-I characteristics of
reverse biased diode.
8. Plot Current (I) Voltage (V) by choosing proper scales
0-10 V
VF
R=100Ω
IF
- 0 – 10 mA
Fig.1. Circuit for forward biasing of the diode
.
VR 0 – 10 V
R=100Ω
- 0 – 500 µA µA
Fig.2. Circuit for reverse biasing of the diode
OBSERVATIONS:
Table I
Readings for Forward Bias of the diode.
Sl. No. VF IF
(volt) (mA)
1.
2.
3.
Table II
Readings for Reverse bias of the diode.
Sl. No. VR IR
(volt) (µA)
1.
2.
3.
RESULT:
PRECAUTIONS:
DEPARTMENT
OF
ON
VERIFICATION OF ZENER DIODE CHARACTERISTICS AND

CALCULATION OF ITS DYNAMIC RESISTANCE.

MESRA, RANCHI
AIM: Verification of Zener diode characteristics and calculation of its dynamic
resistance.
APPARATUS:
1. Power supply.
2. DC voltmeter.
3. DC ammeter.
COMPONENTS:
1. Resistors 470, 1.5K, 2.2K, 3.3K, 5.6K, 12K.
2. Zener EC 3Z 12A.
THEORY:
If the reverse voltage across a Zener diode reaches a level called breakdown
voltage, it starts conducting heavily. Before this reverse voltage is reached it does not
conduct, however a small reverse current does flow (few A).
To prevent high current through the Zener (for it may be damaged), a series
resistor is included. After breakdown the voltage across the zener remains constant even
if the input voltage varies or the load current changes.
PROCEDURE:
A. For Characteristic of Ze ner diode and measuring the Breakdown Voltage:
1. Connect the circuit as shown. Fix the load resistance to 2.2 K

2. Vary V and note the values of I1 , I2 and Vi and Vdc.
3. Tabulate the readings in table given below:
4. Draw V-I characteristics for the zener.
5. Find out the Breakdown Voltage (Vz) of the Zener diode
Vi (volts) Ii (mA) Iz (mA) Vdc (volts)

B. For Study Voltage regulation Characte ristic of Ze ner diode:
1. Keep Vi > Vz (fixed)

2. Vary load (By connecting different load resistances) and measure I 1 , Iz and
Vdc.
3. Tabulate the readings in table given below:
RL (k) I1 (mA) Iz (mA) Vdc (volts)

1.5
2.2
3.3
5.6
12
RESULT:
PRECAUTIONS:
Ii
R1
+ -
00.000 A
470ohm
D1
R5
5V R4 R6 +
R2 R3
Vin 3.3kohm 5.6kohm 00.000 V
-
(0-30V) 1.5kohm 12kohm
+ 2.2kohm
Iz 00.000 A Vz
-
Fig. CIRCUIT DIAGRAMTO STUDY ZENER DIODE CHARACTERISTICS
DEPARTMENT
OF
ON
MEASUREMENT OF RIPPLE FACTOR WITH AND WITHOUT FILTER FOR

HALF WAVE AND FULL WAVE RECTIFIER CIRCUITS

MESRA, RANCHI
AIM: Measurement of ripple factor with and without filter for half wave and full wave
rectifier Circuits
APPARATUS:
1. CRO.
2. DC voltmeter.
3. AC voltmeter.
4. Half wave and Full wave Rectifier circuits
5. Circuit board.
THEORY:
Half-Wave rectifier rectifies the positive half cycles of the ac input. Full-Wave rectifier
rectifies both the positive and negative half cycles of the ac input.
Ripple factor (r) = rms value of the ac component / dc value of the rectifier wave.
i.e. r = Vrms/Vdc
PROCEDURE:
1. Connect a dc voltmeter, an ac voltmeter and a CRO across the output.
2. Connect the circuit as a half wave rectifier (by close K 3 and open K 1 , K2 and
K4 ) and measure the dc and ac voltages with and without filter in each type
3. Plug in the input.
4. Measure Vrms, Vdc and observe waveform on CRO.
5. Tabulate the readings.
6. Calculate r from the readings.
7. Calculate r theoretically.
8. Connect the circuit as C-filter, L-filter, LC-filter and -filter (By Closing
suitable key K 2 , K3 and K 4.) and note the readings of dc voltmeter and ac
voltmeter in each case. Tabulate the readings.
9. Now connect the circuit as a center tapped full wave rectifier (by close K 1, K3
and open K 2 and K 4) and measure the dc and ac voltages with and without
filter (By Closing suitable key K 2 , K3 and K 4.) in each type.
10. Calculate „r‟ from measured value and theoretically.
OBSERVATIONS:
(a) For Half Wave Rectifier:
HW rectifier – K1 open
Parameter Without filter With C1 With LC With CLC

Vdc
Vac
r
(b) For Full Wave Rectifier:

FW rectifier - K1 closed
Parameter Without filter With C1 With LC With CLC

Vdc
Vac
r
RESULT:
PRECAUTIONS:
k3
D1 L1
k1
1mH
T1
230V,50C/S k2 k4
Vin R1
D2 1kohm Vout
C1 C2
1uF 1uF
Fig. CIRCUIT DIAGRAMOF A HALF WAVE AND FULL WAVE RECTIFIER

DEPARTMENT
OF
ON
OBSERVATION OF OUTPUT WAVEFORMS OF DIODE

CLIPPER AND CLAMPER CIRCUITS

MESRA, RANCHI
AIM: Observation of output waveforms of Diode Clippers and Clampers Circuits
APPARATUS REQUIRED :
1. Wish board
2. D.C. Power Supply
3. Function Generator Or Trainer Kit (Microlab-II)
4. C.R.O
CIRCUIT COMPONENTS:
1. Diode (IN 4007)

2. Capacitors
3. Resistors
THEORY
PROCEDURE:
1. Connect the circuit as shown in the circuit diagram-1.

2. Connect the C.R.O. probe across the output terminal and ground.
3. Observe the output waveform.
4. Trace the waveform on the tracing paper.
5. Measure the Amplitude of Sine wave and clipping/clamping Voltage.
6. Repeat the above procedure for circuit diagram- 2,3,4,5 and 6.
RESULT:
PRECAUTIONS:
R R2
1N4001
---
1.2kohm 1.2kohm + R4 ---
--- +
+
1.2kohm
Vo Vo
Vo
1N4001 1N4001
- -
- ---
--- ---
Fig. (c)
Fig. (a) Fig. (b)
-
1N4001
--- ---
+ 1uF C1 + ---
R1 C2 +
1uF
1.2kohm Vo Vo Vo
1N4001
- - -
--- --- ---
1N4001
Fig. (d) Fig. (e) Fig. (f)
DIODECLIPPER AND CLAMPER CIRCUITS

DEPARTMENT
OF
ON
OBTAINING THE FREQUENCY RESPONSE OF CE

TRANSISTOR AMPLIFIER AND MEASUREMENT OF ITS
BANDWIDTH

MESRA, RANCHI
AIM: Obtaining the frequency response of CE transistor amplifier and measurement of
its bandwidth
APPARATUS:
1. Power supply
3. A. C. mill voltmeter
4. Common emitter transistor amplifier circuit
THEORY:
PROCEDURE:
1. Connect the power supply to the circuits as shown. Set the voltage to –12 Volts
with respect to common terminal.
2. Connect a function generator to the input terminal and set it to 25 mV, 10 Hz.
3. Connect an a.c millivoltmeter to the output terminal.
4. Read the output and note down.
5. Keeping Vin fixed at 25 mV, go on increasing the frequency at regular intervals
and measuring the output voltage.
6. Tabulate the readings.
5. Plot Gain against frequency on semilogrethmic graph sheet.
6. Find 3dB point frequencies and Bandwidth.
Note: Try to take the reading until gain will drop from its constant gain upto the
value, which is approximately equal to the gain value for first reading
OBSERVATIONS:
Input Voltage (fixed) = 25 mV.
Frequency Output voltage Voltage gain Gain

(Hz) Vo (Vout / Vin ) [20 log10 (Vout /Vin )]
(Volt) (dB)
30
50
70
90
100
200
300
500
RESULT:
PRECAUTIONS:
V2
12V
R2 R3
8.2kohm 1.5kohm
C2
R1 C1
50uF
Q1
1kohm
50uF
R6 Vout
1kohm
Vin R4 R5
C3
1kohm
470ohm 250uF
Fig. CIRCUIT DIAGRAM OF COMMON EMITTER AMPLIFIER

DEPARTMENT
OF
ON
MEASUREMENT OF THE h-PARAMETERS, hie AND hfe

OF A TRANSISTOR

MESRA, RANCHI
AIM: Measurement of the h-Parameters hie and hfe of a CE transistor amplifier
APPARATUS:
1. Function generator.
2. VTVM/AC Mill voltmeter
3. DC milliammeter.
4. Dual DC Power Supply
THEORY:
hie =Vbe / Ib = Input impedance in CE configuration.
hfe =Ic / I b = Forward current gain in CE configuration
PROCEDURE:
1. Connect the circuit as shown in fig.

2. Apply Vin as 25mV and 1KHz from function generator.
3. Fix collector voltage Vcc at 6 V.
4. Vary ICQ by varying VEE .
5. Measure Vbe, Vce and Vcr for various collector currents (IC).
6. Tabulate the readings and calculate hie and hfe.
7. Plot hie vs. ICQ and hfe vs. ICQ.
OBSERVATIONS:
ICQ Vbe Vce Vcr Ib Ic Hie Hfe

(mA) (mV ) (mv) (mV) = (Vin -Vbe)/10K = (Vce –Vcr)/ 10 =Vbe/I b =Ic/Ib
(A) (mA) (K)
1.0
2.0
3.0
4.0
5.0
RESULT:
PRECAUTIONS:
R3
10ohm
50uF
SK100
10kohm 1mH
+
50uF 00.000 A
-
Icq
Vin 100kohm
25mV Vcc
6V
0-3V
Fig. CIRCUIT DIAGRAMTO MEASURE h-PARAMETER

DEPARTMENT
OF
ON
VERIFICATION OF THE TRANSFER CHARACTERISTICS OF JFET

AND MEASUREMENT OF ITS VOLTAGE GAIN

MESRA, RANCHI
AIM: Verification of the transfer characteristics of JFET and measurement of its voltage
gain.
EQUIPMENTS/APPARATUS REQUIRED:
1. Bread board,
2. Transistor
3. Power Supply
4. Milliammeter
5.Electronic Multimeter.
THEORY: A field effect transistor is a three-terminal unipolar device. Its input

impedance is very high. A field effect transistor can be either a JFET or
MOSFET. A JFET, MOSFET both can be either have N-channel or P-
channel. An N-channel JFET has an N-type Semiconductor bar, the two
ends of which make the drain and source terminals. On the other two sides
of this N-type Semiconductor bar, two P type regions are made. These
P-regions form gates. Usually, these two Gates are connected together to
form a single gate. The gate is given a negative bias with respect to the
source. The drain is given positive potential with respect to the source. In
case of a P-channel JFET, the terminals of all the batteries are reversed.
FORMULAE USED:
1. Amplification factor  = VDS/VGSID=constant
2. Tran conductance gm= ID/VGS VDS=constant
3. Drain Resistance r d = VDS/Id VGS=constant
4.  = rd * gm
PROCEDURE:
(a) To plot the output characteristics
1. Assemble the circuit as shown in fig.
2. First, fix VGS at some value say 0 V. Increase the drain voltage VDS slowly
in steps say (0-10 V). Note drain current ID for each step.
3. Now, change V GS to another value and repeat the above for V GS=1V to
3V.
4. Plot the drain characteristics (graph between I D and VDS for fixed value of
VGS).
(b) To plot the transfer characte ristics
1. Adjust VDS to any value say 2V and keep it constant throughout the
observations.
2. Vary VGS in small steps and note ID for each value.
3. Plot the Transfer characteristics (graph between I D and V GS for fixed value
of VDD).
OBSERVATIONS:
(a) Maxm drain current reading = ……. mA

(b) Maxm drain voltage reading =………mA
(c) Drain characteristics
S. NO. VDS in (V) Drain Current ID(mA)

VGS =0V VGS =-1V VGS =-2V VGS =-3V
RESULT:
PRECAUTIONS:
Fig. Circuit Diagram for measurement of Output and Transfer Characteristics of
JFET
DEPARTMENT
OF
ON
OBTAINING THE FREQUENCY RESPONSE AND MEASUREMENT OF

BANDWIDTH OF AN INVERTING OP-AMP (USING IC 741)

MESRA, RANCHI
AIM: Obtaining the frequency response and measurement of Bandwidth of an inverting
APPARATUS:
1. MICROLAB-II
2. AC MILLIVOLTMETER
COMPONENTS:
1. RESISTORS 4.7K,47K.470KΩ
2. IC 741
ABOUT OP-AMP IC 741:
The 741 is the godfather of all operational amplifiers (amplifiers on a chip).

Although most up-to-date designs beat it for speed, low noise, etc, it still works well as a
general purpose device. One of its advantages is that it is compensated (its frequency
response is tailored) to ensure that under most curcumstances it won't produce unwanted
spurious oscillations. This means it is easy to use, but the down-side of this is the poor
speed/gain performance compared to more modern op-amps.
The 741 is usually supplied in an 8-pin „DIL‟ (Dual In Line) or „DIP‟ (Dual Inline
Package, or sometimes Dual Inline Plastic) package with a pinout shown above. This has
proved so popular that many other competing op-amps have adoped the same
package/pinout. Hence for many applications the various op-amps are „drop in‟
replacements or upgrades for one another. These days there is a large family of 741 type
devices, made by various manufacturers. Sometimes one manufacturer will make
different versions, which work better than others in some respect. Each has a slightly
different part number, but it generally has “741” in it somewhere!
The values given below are „typical‟ for an ordinary 741, better versions (more
expensive) may give better results...
Typical values of Basic Parameters:
Rail voltages : +/- 15V dc (+/- 5V min, +/- 18V max)
Input impedance: Around 2MegOhms
Low Frequency voltage gain: approx 200,000
Input bias current: 80nA
Slew rate: 0.5V per microsecond
Maximum output current: 20mA
Recommended output load: not less than 2kilOhms
Note that, due to the frequency compensation, the 741's voltage gain falls rapidly with
increasing signal frequency. Typically down to 1000 at 1kHz, 100 at 10kHz, and unity at
about 1MHz. To make this easy to remember we can say that the 741 has a gain-
bandwidth product of around one million (i.e. 1 MHz as the units of frequency are Hz).
THEORY:
PROCEDURE:
1. Connect the circuit as shown in the circuit diagram.

2. Keep Rf = 470K ,R1=47K
3. Keep Vin = 100mV (fixed) each time.
4. Vary the frequency from 20Hz to 200KHz and note down the output reading
at each time keeping Vin =100mV (fixed) and tabulate the readings in to
observation table.
5. Replace R1=4.7K and repeat the procedure as above (Vin=10mV).
Note: Try to take the reading until gain will drop from its constant gain upto the
value, which is approximately equal to the gain value for first reading
OBSERVATIONS:
SL. No. Frequency Vin Vout Gain Av=Vout/Vin Gain

(Hz) (mv) (mv) [20 log10 Vout/Vin )]
(dB)
1
2
3
4
5
RESULT:
PRECAUTIONS:
Rf 470kohm
-10V
U1
4
R1
2
4.7kohm 741
6
Vout
3
7 1 5
Vin
10mV
+10V
Fig. CIRCUIT DIAGRAMOF AN INVERTING AMPLIFIER

DEPARTMENT
OF
ON
OBTAINING THE FREQUENCY RESPONSE AND MEASUREMENT OF

BANDWIDTH OF A NON- INVERTING OP-AMP (USING IC 741)

MESRA, RANCHI
AIM: Obtaining the frequency response and measurement of Bandwidth of a non-
inverting OP-AMP. (Using IC 741).
APPARATUS:
1. FUNCTION GENERATOR
2. MICROLAB-II
3. AC MILLIVOLTMETER
COMPONENTS:
1. IC 741
2. RESISTOR‟S 4.7K, 47K, 470 K.

THEORY:
PROCEDURE:

2. Keep Rf = 470 k,R1 = 47 k
3. Vary the frequency from 20Hz to 200 KHz and note down the output
reading each time, keeping Vin=10 mV (fixed) and tabulate the reading in
to observation table.
4. Repeat R1= 4.7K and repeat the procedure as above.
OBSERVATIONS:
SL. No. Frequency Vin Vout Gain Av=Vout/Vin Gain

(Hz) (mv) (mv) [20 log10 Vout/Vin )]
(dB)
1
2
3
4
5
RESULT:
PRECAUTIONS:
Rf
470kohm
-10V
U1
4
R1
2
47kohm 741
6
Vout
3
7 1 5
V1
100mV
+10V
Fig. CIRCUIT DIAGRAMOF A NON-INVERTINGN CIRCUIT

DEPARTMENT
OF
ON
DESIGN A DIFFERENTIAL AMPLIFIER AND MEASUREMENT

OF ITS COMMON MODE REJECTION RATIO (CMRR)

MESRA, RANCHI
AIM: Design a differential amplifier and measurement of its Common Mode Rejection
Ratio (CMRR)
APPARATUS:
1. Microlab II
3. AC millivoltmeter
COMPONENTS:
1. IC 741
2. Resistors – 470K, 47K, 82Ω, 2nos each

THEORY:
A differential amplifier amplifies the difference between two signals.

Difference mode signal Vd = V1 – V2
Common mode signal Vc = 1 /2 (V1 + V2 )
Differential amplifier is a linear device.
Vo = A1 V1 + A2 V2
A1 = Amp. from input V1, when input 2 is grounded.
A2 = Amp. from input V2, when input 1 is grounded.
1. V1 = Vc + 1/2 Vd\
2. V2 = Vc – 1/2 Vd
3. Vo = AdVd + AcVc
4. Ad = (A1 – A2 )/2, Ac = A1 + A2
Common mode rejection ration [CMRR] is:

Ad Differential mode gain
CMRR = ------ = ----------------------------
Ac Common mode gain
PROCEDURE:
1. Connect the circuit as shown in the circuit 1.

2. Keep Vin = 100 mV.
3. Measure the output by varying frequency.
4. Common mode gain Ac = Vo /Vin .
5. Connect the circuit as shown in circuit 2.
6. Measure V2 and Vo while keeping V1 = 100mV for different frequencies.
7. Calculate Ad from Vo = Ad Vd + AcVc where Vc is Common mode signal and Vd
is the Difference mode signal
8. Calculate CMRR:
CMRR = Ad /Ac.
OBSERVATIONS:
For finding out Ac :
Frequency Vin Vo Ac = Vo /Vin

(Hz) (mV) (mV)
20
200
2000
20000
200000
For finding out Ad :
Frequency V1 V2 Vo
(Hz) (mV) (mV) (mV)
20
200
2000
20000
200000
RESULT:
PRECAUTIONS:
Rf
470kohm
-10V
U1
4
47kohm
2
741
6
Vout
3
47kohm
7 1 5
Vin 220kohm
+10V
Fig. CIRCUIT IN COMMON MODE
R5
470kohm
-10V
47kohm U2
4
2
741
100ohm 6
Vout
3
7 1 5
Vs 47kohm
470kohm
100ohm
+10V
Fig. CIRCUIT IN DIFFERENTIAL MODE

DEPARTMENT
OF
ON
IMPLEMENTATION OF DIFFERENT GATES USING UNIVERSAL

GATE (NAND GATES).

MESRA, RANCHI
AIM: Implementation of different gates using universal gate (NAND gates).
APPARATUS REQUIRED:
1. Wish Board
1. D.C. Power Supply
Or
Trainer Kit (Microlab-II)
CIRCUIT COMPONENT:
1. IC7400
2. Connecting Wires
THEORY: The NAND gate is said to be a universal gate because any all other gates as
well as any digital system can be implemented with it. Combinational circuits and
sequential circuits as well can be constructed with this gate because the flip- flop circuit
can be constructed from two NAND gates connected back to back.
The implementation of the AND, OR, and NOT operations with NAND gates is
shown in Fig. The NOT operation is obtained from a one- input NAND gate. The AND
operation requires two NAND gates. The first produces the inverted AND and the second
acts as an inverter to produce the normal output. The OR operation is achieved through a
NAND gate with additional inverters in each input.
PROCEDURE:

2. Before switching ON power supply, make sure that the co nnection are correct.
3. Apply the input logic state code mentioned in Observation Table in terms of +5 volts
for state-1 and 0 volts for state-0.
4. Observe the output states.
5. Verify the result of truth ness.
6. Repeat steps from 3 to 5 for all possible combination.
OBSERVATION TABLE:
(i)Verifying: Truth Table of (ii)Verifying: Truth Table of
NOT GATE AND GATE
INPUT OUTPUT
INPUT OUTPUT A B Y
X Y 0 0
0 1
0 1 0
1 1 1
(iii)Verifying: Truth Table of (iv)Verifying: Truth Table of
OR GATE EX-OR GATE
INPUT OUTPUT INPUT OUTPUT

A B Y
0 0 X Y X.Y (X.Y)‟.X (X.Y)‟.Y X  Y
0 1
1 0
0 0
1 1
0 1
1 0
1 1
RESULT:
PRECAUTIONS:
1
X 3
2 F
NOT GATE
1 (AB)' 1
A 3 3
2 2 AB
B
AND GATE
1
3
A 2 A'
1
3
2
(A'B')' = A + B
1
3
B 2 B'
OR GATE
4
6
5
12
X 1 11
3 13 F
2
Y
9
8
10
EX-OR GATE
DEPARTMENT
OF
ON
MEASUREMENT OF UNKNOWN FREQUENCIES USING

LISSAJOUS PATTERN

MESRA, RANCHI
AIM: Measurement of unknown frequencies using Lissajous pattern
INSTRUMENTS:
1. CRO.
2. Function generator (Two)
3. Power supply
THEORY:
Two super-position of the two harmonic functions such as sine wave produce a
Lissajous Pattern on the CRO screen. Lissajous pattern may be a straight line, an ellipse
or a circle depending on the frequency, phase and amplitude of the two signals.
A straight line results when the two waves are in phase or exactly 180˚ out of
phase with each other. A circle is displayed when the phase difference is 90˚ and the
signals are equal in amplitude.
If fy corresponds to the frequency of vertical deflection voltage and fx corresponds to the

horizontal deflection voltage then,
fy / fx = No. of horizontal tangencies (HT) / No. of vertical tangencies (VT)
Where,
Horizontal Tangency (HT): It is the no of times, a factitious straight line taken at any
one Horizontal side of the Lissajous pattern (Up/Down) serves as a tangent to the
Lissajous pattern.
Vertical Tangency (VT) is the no of times, a factitious straight line taken at any one
Vertical side of the Lissajous pattern (Up/Down) serves as a tangent to the Lissajous
pattern.
Hence fy can be found if fx is known.
PROCEDURE:
1. An oscillator of unknown frequency is connected to the vertical plate of the

CRO and standard oscillator of known frequency is connected to horizontal
plate.
2. Adjust the voltage of the two oscillators to give a pattern of a suitable size.
3. Vary slightly the frequency of the test oscillator until a simple Lissa jous
pattern is obtained. Read known frequency fx.
4. Find HT and VT from Lissajous Pattern.
5. Calculate fy by the given formula.
6. Repeat the step 3 and 4 and take five different readings.
OBSERVATIONS:
Sr. Fx Horizontal Vertical Fy
No. (Hz) Tangency Tangency [(VT/HT)* Fx ]
(HT) (VT) (Hz)
1
2
3
4
5
RESULT:
PRECAUTIONS:
XSC1
G
T
A B
XFG1
XFG2
F2
F1
Fig. CIRCUIT FOR THE

MEASUREMENT OF UNKNOWN FREQUENCY BY LISSAJOUS PATTERN
DEPARTMENT
OF
ON
MEASUREMENT OF THE PHASE ANGLE BETWEEN TWO

SIGNALS OF THE SAME FREQUENCY USING CRO

MESRA, RANCHI
AIM: Measurement of the phase angle between two signals of the same frequency using
CRO
APPARATUS:
1. CRO
3. RC network
THEORY:
When two Sinusoidal signals of different amplitudes and equal frequencies are applied to
Y-input and X- input of the CRO an ellipse is obtained.
PROCEDURE:
1. Observe and trace the Ellipse on tracing paper and Measure Y intercept
and Y peak
2. Note down the frequency of wave applied from Function Generator.
3. Calculate the phase difference as
Theoretical =tan-1 (RC)
Experimental  =sin-1 (Y- intercept / Y-peak)
OBSERVATIONS:
R = 3900; C = 33000 pf
frequency of (A) (X) (Y) (B) Error

=tan-1 RC
-1
the Applied Y-intercept Y-peak Sin (X/Y) (A- B)
signal
(Hz)
1.
2.
3.
4.
5.
RESULT:
PRECAUTIONS:
XSC1
G
T
A B
Y X
R
3900ohm
C
33nF
AF Generator
Fig. CIRCUIT DIAGRAM FOR THE MEASUEMENT OF PHASE ANGLE

Basic Electronics Lab New

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EC3102: BASIC ELECTRONICS LABORATORY

1. Measurement of the following using Cathode Ray Oscilloscope (CRO):

1. Verification of Forward and Reverse bias characteristics of a PN junction diode.

2. Verification of Zener diode characteristics and calculation of its dynamic resistance.

4. Observation of output waveforms of Diode Clipper and Clamper Circuits.

5. Obtaining the frequency response of CE transistor amplifier and measurement of its

6. Measurement of the h-parameters hie and hfe of a CE transistor amplifier.

7. Verification of the transfer characteristics of JFET and measurement of its voltage

8. Obtaining the frequency response and measurement of Bandwidth of an inverting

9. Obtaining the frequency response and measurement of Bandwidth of a non- inverting

11. Implementation of different gates using universal gate (NAND gates).

21. Measurement of unknown frequencies using Lissajous patterns.

23. Design of a logarithmic amplifier (using IC 741 OP-AMP).

BASIC ELECTRONICS LABORATORY

LAB INSTRUCTIONS FOR CARRYING OUT PRACTICAL

MEASUREMENT OF THE FOLLOWING USING CRO:

BIRLA INSTITUTE OF TECHNOLOGY

AIM: Measurement of the following using Cathode Ray Oscilloscope (CRO):

For AC Voltage measure ment:

1. From Function generator: Input frequency = 0 Hz;

Sr. Scale Scale No of div. No of div.

For Square wave measure ments:

Sr. Scale Scale No of div. No of div.

For Triangular wave measurements:

Sr. Scale Scale No of div. No of div.

Fig. CIRCUIT FOR STUDY OF CRO

BASIC ELECTRONICS LABORATORY

LAB INSTRUCTIONS FOR CARRYING OUT PRACTICAL

VERIFICATION OF FORWARD AND REVERSE BIAS

BIRLA INSTITUTE OF TECHNOLOGY

1. Connect the circuit as shown in figure 1.

Fig.1. Circuit for forward biasing of the diode

Fig.2. Circuit for reverse biasing of the diode

BASIC ELECTRONICS LABORATORY

LAB INSTRUCTIONS FOR CARRYING OUT PRACTICAL

VERIFICATION OF ZENER DIODE CHARACTERISTICS AND

BIRLA INSTITUTE OF TECHNOLOGY

A. For Characteristic of Ze ner diode and measuring the Breakdown Voltage:

1. Connect the circuit as shown. Fix the load resistance to 2.2 K

Vi (volts) Ii (mA) Iz (mA) Vdc (volts)

1. Keep Vi > Vz (fixed)

RL (k) I1 (mA) Iz (mA) Vdc (volts)

Fig. CIRCUIT DIAGRAMTO STUDY ZENER DIODE CHARACTERISTICS

BASIC ELECTRONICS LABORATORY

LAB INSTRUCTIONS FOR CARRYING OUT PRACTICAL

MEASUREMENT OF RIPPLE FACTOR WITH AND WITHOUT FILTER FOR

BIRLA INSTITUTE OF TECHNOLOGY

Parameter Without filter With C1 With LC With CLC

(b) For Full Wave Rectifier:

Parameter Without filter With C1 With LC With CLC

Fig. CIRCUIT DIAGRAMOF A HALF WAVE AND FULL WAVE RECTIFIER

BASIC ELECTRONICS LABORATORY

LAB INSTRUCTIONS FOR CARRYING OUT PRACTICAL

OBSERVATION OF OUTPUT WAVEFORMS OF DIODE

BIRLA INSTITUTE OF TECHNOLOGY

1. Diode (IN 4007)

1. Connect the circuit as shown in the circuit diagram-1.

Fig. (d) Fig. (e) Fig. (f)

DIODECLIPPER AND CLAMPER CIRCUITS

BASIC ELECTRONICS LABORATORY

LAB INSTRUCTIONS FOR CARRYING OUT PRACTICAL

OBTAINING THE FREQUENCY RESPONSE OF CE

BIRLA INSTITUTE OF TECHNOLOGY

Frequency Output voltage Voltage gain Gain