Start Practice Exam Test Questions Part 1 of The Series

Start Practice Exam Test Questions Part 1 of the Series
Choose the letter of the best answer in each questions.
1. How many electrons are there in the fourth orbit of a copper atom?
A. 1
B. 2
C. 3
D. 4
View Answer:
Answer: Option A
2. The maximum permissible number of electrons in the third orbit is
A. 18
B. 8
C. 32
D. 2
View Answer:
3. Varactor diodes are commonly used
A. As voltage controlled capacitance
B. As a constant current source
C. As voltage multiplier
D. As a constant voltage source
View Answer:
Answer: Option A
Solution:
4. The reason why electrons are not pulled into the nucleus of an atom.
A. Because of the centrifugal or outward force created by their orbital motion.
B. Because of the force of attraction between them and the nucleus is weak.
C. Because they are not being attracted by the positive nucleus.
D. Because of the strong bonding between them that resists any force pulling them towards the
nucleus.
View Answer:
Answer: Option A
Solution:
5. The electrons in the largest orbit travel ________ than the electrons in the smaller orbits.
A. More slowly
B. Faster
C. In the same velocity
D. A little bit slower
View Answer:
Answer: Option A
Solution:
6. A transistor configuration with the lowest current gain.
A. Common base
B. Common emitter
C. Common collector
D. Emitter-follower
View Answer:
Answer: Option A
Solution:
7. A semiconductor in its purest form is called
A. Pure semiconductor
B. Doped semiconductor
C. Intrinsic semiconductor
D. Extrinsic semiconductor
View Answer:
Answer: Option C
Solution:
8. Valence orbit is the other form for
A. Outer orbit
B. 3rd orbit
C. 4th orbit
D. 2nd orbit
View Answer:
Answer: Option A
Solution:
9. K shell means
A. First orbit
B. 2nd orbit
C. 3rd orbit
D. 4th orbit
View Answer:
Answer: Option A
10. For either germanium or silicon diodes, the barrier potential decreases _______ for each
Celsius degree rise.
A. 1 mV
B. 3 mV
C. 4 mV
D. 2 mv
View Answer:
Answer: Option D
Solution:
11. A diode modeling circuit which considers the threshold voltage, average resistance and
switch as the diode’s equivalent circuit.
A. Ideal model
B. Simplified model
C. Piecewise linear model
D. Real model
View Answer:
Answer: Option C
Solution:
12. There are two mechanisms by which holes and electrons move through a silicon crystal.
They are
A. Covalent bond and recombination
B. Diffusion and drift
C. Free and charge particles
D. Forward and reverse bias
View Answer:
Answer: Option B
Solution:
13. A semiconductor is an element with a valence of
A. Four
B. Eight
C. Two
D. One
View Answer:
Answer: Option A
Solution:
14. What orbit controls the electrical property of the atom?
A. Valence orbit
B. First orbit
C. Fourth orbit
D. M shell
View Answer:
Answer: Option A
Solution:
15. ________ is a substance that contains atoms with several bands of electrons but with only
one valence electron.
A. Insulator
B. Conductor
C. Semiconductor
D. Resistor
View Answer:
Answer: Option B
Solution:
16. Pure silicon crystal atoms contain how may valence electrons as a result of covalent
bonding?
A. 1
B. 4
C. 8
D. 16
View Answer:
Answer: Option C
Solution:
17. The peak inverse voltage of a full wave center tapped rectifier circuit is equal to _______ of
the input signal.
A. Thrice the peak
B. Twice the peak
C. One half
D. One third
View Answer:
Answer: Option B
18. Diffusion or storage capacitance is the term used to refer to
A. The reverse bias capacitance of a diode
B. The forward bias capacitance of a diode
C. The breakdown capacitance of a zener diode
D. The effective capacitance of the rectifier

View Answer:
Answer: Option B
Solution:
19. What is considered as the key electrical conductivity?
A. The number of electrons in the valence orbit
B. The number of protons in the nucleus
C. The number of neutrons in the nucleus
D. The number of protons plus the number of electrons in the atom
View Answer:
Answer: Option A
Solution:
20. Each atom in the silicon crystal has how many electrons in its valence orbit?
A. 8
B. 32
C. 2
D. 4
View Answer:
Answer: Option A
Solution:
21. Lifetime is the amount of time between the creation and disappearance of a/an
A. Free electron
B. Proton
C. Ion
D. Neutron
View Answer:
Answer: Option A
Solution:
22. A silicon crystal is an intrinsic semiconductor
A. If every atom in the crystal is a silicon atom
B. If majority of the atoms in crystal is a silicon atom
C. If the crystal contains 14 silicon atoms
D. If the crystal is undoped
View Answer:
Answer: Option A
Solution:
23. At room temperature, a silicon crystal acts approximately like a/an
A. Insulator
B. Semiconductor
C. Conductor
D. Superconductor
View Answer:
Answer: Option A
Solution:
24. An extrinsic semiconductor is a
A. Doped semiconductor
B. Pure semiconductor
C. Good insulator
D. Good conductor
View Answer:
Answer: Option A
Solution:
25. What is associated with random motion due to thermal agitation in the movement of holes
and electrons in a silicon crystal?
A. Drift
B. Diffusion
C. Doping
D. Recombination
View Answer:
Answer: Option B
Solution:
26. The peak inverse voltage of a half wave rectifier circuit is approximately equal to the
________ of the input signal.
A. Peak amplitude
B. Frequency
C. Voltage sinusoidal
D. Current
View Answer:
Answer: Option A
Solution:
27. Silicon that has been doped with a trivalent impurity is called a/an
A. P-type semiconductor
B. N-type semiconductor
View Answer:
Answer: Option A
Solution:
28. Silicon that has been doped with a pentavalent impurity is called a/an
A. N-type semiconductor
B. P-type semiconductor
View Answer:
Answer: Option A
Solution:
29. What is another name for a pn crystal
A. Junction diode
B. PN junction
C. Diode
D. Lattice
View Answer:
Answer: Option A
Solution:
30. An acceptor atom is also called
A. Pentavalent atom
B. Trivalent atom
C. Minority carrier
D. Majority carrier
View Answer:
Answer: Option B
Solution:
31. Which is a donor atom?
A. Trivalent atom
B. Aluminum
C. Boron
D. Pentavalent atom
View Answer:
Answer: Option D
Solution:
32. In an n-type semiconductor, free electrons are called
A. Minority carriers
B. Valence electrons
C. Majority carriers
D. Charge carriers
View Answer:
Answer: Option C
Solution:
33. in an n-type semiconductor, holes are called
A. minority carriers
B. majority carriers
C. protons
D. charge carriers
View Answer:
Answer: Option A
Solution:
34. What is the barrier potential of germanium at 25˚C
A. 0.7 V
B. 0.3 V
C. 0.5 V
D. 0.4 V
View Answer:
Answer: Option B
Solution:
35. The barrier potential for a silicon diode at 25˚C is approximately
A. 0.4 V
B. 0.3 V
C. 0.7 V
D. 0.5 V
View Answer:
36. Each pair of positive and negative ions at the junction is called a/an
A. Anion
B. Positron
C. Cation
D. Dipole
View Answer:
Answer: Option D
Solution:
37. When temperature increases, barrier potential _________.
A. Remains the same
B. Decreases
C. Increases
D. Either increases or decreases depending on the semiconductor material used
View Answer:
Answer: Option B
Solution:
38. Avalanche effects occurs at
A. Higher reverse voltages
B. Lower reverse voltages
C. Higher forward voltages
D. Lower forward voltages
View Answer:
Answer: Option A
Solution:
39. The creation of free electrons through zener effect is also known as
A. Avalanche emission
B. Thermionic emission
C. Low-field emission
D. High-field emission
View Answer:
Answer: Option D
Solution:
40. Zener effect only depends on the
A. High-speed minority carriers
B. High-speed majority carriers
C. Intensity of the electric field
D. Intensity of the magnetic field
View Answer:
Answer: Option C
Solution:
41. What temperature is inside the diode, right at the junction of the p and n-type materials?
A. Junction temperature
B. Ambient temperature
C. Internal temperature
D. Absolute temperature
View Answer:
Answer: Option A
Solution:
42. What is the input control parameter of a FET?
A. Gate voltage
B. Source voltage
C. Drain voltage
D. Gate current
View Answer:
Answer: Option A
Solution:
43. One of the important diode parameters which gives the magnitude of current the diode
candle without burning.
A. Reverse saturation current
B. Reverse current
C. Forward current
D. Forward breakdown current
View Answer:
Answer: Option C
Solution:
44. The maximum reverse voltage that can be applied before current surges is called
A. Reverse recovery time
B. Maximum junction voltage
C. Forward voltage
D. Reverse breakdown voltage
View Answer:
Answer: Option D
Solution:
45. What is the other name of Esaki diode?
A. Diac
B. Hot-carrier diode
C. Shockley diode
D. Tunnel diode
View Answer:
Answer: Option D
Solution:
46. The most important application of Schottky diodes is in
A. Digital computers
B. Power supplies
C. Amplifier circuits
D. Voltage regulators
View Answer:
Answer: Option A
Solution:
47. A diode is a nonlinear device because
A. It produces a nonlinear graph
B. Its current is not directly proportional to its voltage
C. It has a built-in barrier potential
D. It can rectify alternating current
View Answer:
48. The sum of the resistance of the p-region and the n-region is called
A. Junction resistance
B. Extrinsic resistance
C. Intrinsic resistance
D. Bulk resistance
View Answer:
Answer: Option D
Solution:
49. What is the typical bulk resistance of rectifier diodes?
A. Less than 1Ω
B. Greater than 1Ω
C. Equal to 1Ω
D. It depends on the doping level
View Answer:
Answer: Option A
Solution:
50. The reverse bias diode capacitance is termed as
A. Transition region capacitance
B. Diffusion capacitance
C. Storage capacitance
D. Reverse capacitance
View Answer:
Answer: Option A
51. The time taken by the diode to operate in the reversed condition from forward conduction.
A. Maximum power time
B. Reverse recovery time
C. Lifetime
D. Time allocation
View Answer:
Answer: Option B
Solution:
52. Approximately, the atomic weight of germanium is
A. 32
B. 28.09
C. 72.7
D. 16
View Answer:
Answer: Option C
Solution:
53. Atomic weight of silicon at 300 K is
A. 28.09
B. 72.7
C. 5.32
D. 16
View Answer:
Answer: Option A
Solution:
54. An LED and phototransistor is equivalent to a/an
A. Thermocouple
B. FET
C. Optocoupler
D. Regulator
View Answer:
Answer: Option C
Solution:
55. Optocoupler is otherwise known as
A. Laser
B. Photodiodes
C. Optoisolator
D. Photoconductive cell
View Answer:
Answer: Option C
Solution:
56. When the emitter junction is forward biased while the collector junction is reverse biased,
the transistor is at ________ region.
A. Cut-off
B. Saturation
C. Active
D. Breakdown
View Answer:
Answer: Option C
Solution:
57. When both emitter and collector junction are forward biased, the transistor is said to be at
_________ region.
A. Active
B. Cut-off
C. Breakdown
D. Saturation
View Answer:
Answer: Option D
Solution:
58. An equivalent circuit of a diode in which it is represented as a switch in series with a barrier
potential.
A. First approximation
B. Second approximation
C. Third approximation
D. Fourth approximation
View Answer:
Answer: Option B
Solution:
59. Which of the following is the equivalent circuit for a diode for third approximation?
A. A switch only
B. A switch in series with a battery in series with a resistance
C. A switch in series with battery
D. A switch in series with a resistance
View Answer:
Answer: Option B
60. A silicon crystal is a/an ___________ of a semiconductor if every atom in the crystal is a
silicon atom.
A. Extrinsic
B. Intrinsic
C. P-type
D. N-type
View Answer:
Answer: Option B
Solution:
61. With pnp voltage divider bias, you must use
A. Ground
B. Negative power supplies
C. Positive power supplies
D. Resistors
View Answer:
62. Two pn silicon diodes are connected in series opposing. A 5 V voltage is impressed upon
them. Find the voltage across each junction at room temperature when nVT= 0.052 V.
A. 0.236 V, 3.2 V
B. 4.764 V, 0.236 V
C. 0.036 V, 4.964 V
D. 3.21 V, 1.79 V
View Answer:
Answer: Option C
Solution:
63. A half-wave signal has a period of
A. 16.7 ms
B. 8.3 ms
C. 16.7 µs
D. 8.3 µs
View Answer:
Answer: Option A
Solution:
64. A full-wave signal has a period of
A. 16.7 µs
B. 8.3 µs
C. 8.3 ms
D. 16.7 ms
View Answer:
Answer: Option C
Solution:
65. When doping increases, ________ of a semiconductor decreases.
A. Impurity
B. Conductivity
C. Bulk resistance
D. Minority carrier
View Answer:
Answer: Option C
Solution:
66. Which of the following has the least noise level?
A. FET
B. BJT
C. Triode
D. Tetrode
View Answer:
Answer: Option A
Solution:
67. Which of the following has the highest input impedance
A. FET
B. BJT
C. MOSFET
D. Crystal diode
View Answer:
Answer: Option C
Solution:
68. The frequency of a half-wave signal is
A. Twice the line frequency
B. Equal to the line frequency
C. One-half of the line frequency
D. One-fourth the line frequency
View Answer:
Answer: Option B
Solution:
69. For a full-wave rectifier, the output frequency
A. Equals one-half the input frequency
B. Equals the line frequency
C. Equals two times the input
D. Is three times the line frequency
View Answer:
Answer: Option C
Solution:
70. The averaged dc voltage of a half wave rectifier circuit is _________ of the value of the
peak input voltage.
A. 63.6%
B. 31.8%
C. 4.8%
D. 6.2%
View Answer:
Answer: Option B
Solution:
71. The average dc voltage of a full wave rectifier circuit is __________ of the value of the
peak input voltage.
A. 31.8%
B. 48.1%
C. 63.6%
D. 1%
View Answer:
Answer: Option C
72. Typical leakage current in a pn junction is in the order of
A. µA
B. mA
C. nA
D. pA
View Answer:
Answer: Option A
Solution:
73. The resistance of a forward biased pn junction is in the order of
A. Ω
B. mΩ
C. µΩ
D. kΩ
View Answer:
Answer: Option A
Solution:
74. The removal by electronic means of one extremity of an input waveform is called
________.
A. Filtering
B. Clamping
C. Amplifying
D. Clipping
View Answer:
Answer: Option D
Solution:
75. Which of the choices below does not describe a clipper circuit?
A. Limiter
B. Amplitude selector
C. Slicer
D. Baseline stabilizer
View Answer:
Answer: Option D
Solution:
76. The varactor diode is also called as
A. Voltage-variable capacitance
B. Varicap
C. Epicap
D. All of these
View Answer:
Answer: Option D
Solution:
77. What diode has no depletion layer
A. Varactor
B. Varistor
C. Schottky diode
D. Shockley diode
View Answer:
Answer: Option D
Solution:
78. Varistors are used for line filtering to eliminate spikes and dips and is also called
A. Transient regulator
B. Transient limiter
C. Transient filter
D. Transient suppressor
View Answer:
Answer: Option D
Solution:
79. Defined as random motion of holes and free electrons due to thermal agitation
A. Fission
B. Fusion
C. Diffusion
D. Ionization
View Answer:
Answer: Option C
Solution:
80. The temperature coefficient of resistance of a semiconductor is
A. Positive
B. Negative
C. Zero
D. Infinity
View Answer:
Answer: Option B
Solution:
81. A large signal amplifier which is biased so that collector current flow continuously during
the complete electrical cycle of the signal as well as when no signal is present
A. Class A
B. Class B
C. Class AB
D. Class C
View Answer:
Answer: Option A
Solution:
82. A large signal amplifier which is biased so that current is non zero for less than one-half
cycle.
A. Class AB
B. Class C
C. Class A
D. Class B
View Answer:
Answer: Option C
Solution:
83. A class __________ amplifier stage operates with a small forward bias of the transistor so
that some collector current flows at all times
A. A
B. B
C. AB
D. C
View Answer:
Answer: Option C
Solution:
84. What factor is shown on a data sheet that tells how much you have to reduce the power
of a device?
A. Power factor
B. Derating factor
C. Reactive factor
D. Reduction factor
View Answer:
Answer: Option B
Solution:
85. The time it takes to turn off a forward-biased diode is called the
A. Forward recovery time
B. Reverse recovery time
C. Recombination
D. Turn-off time
View Answer:
Answer: Option B
Solution:
86. A heavily doped semiconductor has
A. High resistance
B. No effect on the semiconductor characteristics
C. More heat dissipation
D. Low resistance
View Answer:
Answer: Option D
Solution:
87. Gallium arsenide, aluminum arsenide and gallium phosphide are classified as
A. Elementary semiconductor
B. Secondary semiconductor
C. Intrinsic material made by doping

D. Insulators
View Answer:
Answer: Option B
Solution:
88. A lightly doped semiconductor has
A. Low resistance
B. High resistance
C. No effect on a semiconductor
D. More heat dissipated behaviors
View Answer:
Answer: Option B
Solution:
89. The property or ability of a material to support charge flow or electron flow
A. Resistance
B. Conductance
C. Resistivity
D. Permeance
View Answer:
Answer: Option B
Solution:
90. What is also known as photodiffusion effect?
A. Dember effect
B. Skin effect
C. Destriau effect
D. Night effect
View Answer:
Answer: Option A
Solution:
91. An effect that occurs within the entire bulk of a semiconductor material rather than in a
localized region or junction
A. Silicon effect
B. Dember effect
C. Bulk effect
D. Destriau effect
View Answer:
Answer: Option C
Solution:
92. The creation voltage in a conductor or semiconductor by illumination of one surface
A. Dember effect
B. Skin effect
C. Destriau effect
D. Night effect
View Answer:
Answer: Option A
Solution:
93. What device uses a material catwhisker as its anode and is classified as a hot-carrier
diode?
A. PIN
B. Point-contact diode
C. Shockley diode
D. Crystal diode
View Answer:
Answer: Option B
94. What is the typical operating current of an LED?
A. 50 mA
B. 10 mA
C. 20 mA
D. 5 mA
View Answer:
Answer: Option B
Solution:
95. At absolute zero temperature, a semiconductor behaves as a/an
A. Good conductor
B. Superconductor
C. Insulator
D. Variable resistor
View Answer:
Answer: Option C
Solution:
96. Avalanche breakdown in a semiconductor takes place
A. When forward current exceeds a certain value
B. When potential barrier is reduced to zero
C. When reverse bias exceeds a certain value

D. When forward bias exceeds a certain value
View Answer:
Answer: Option C
Solution:
97. A cold-cathode glow-discharge diode having a copper anode and a large cathode of
sodium or other material.
A. Tunnel diode
B. BARITT diode
C. Anotron
D. READ diode
View Answer:
Answer: Option C
Solution:
98. A microwave diode in which the carriers that transverse the drift region are generated by
minority carrier injection from a forward-biased junction instead of being extracted from the
plasma of an avalanche region.
A. IMPATT
B. TRAPAT
C. BARITT diode
D. Esaki diode
View Answer:
Answer: Option C
Solution:
99. What electronic circuit converts AC to DC where the DC output peak value can be greater
than the AC input peak value?
A. Voltage multiplier
B. Rectifier
C. Clamper
D. Clipper
View Answer:
Answer: Option A
Solution:
100. Which of the item below does not mean a VARACTOR diode?
A. VOLTACAPS
B. VARICAPS
C. Voltage variable capacitors
D. Variable resistance diode
View Answer:
Answer: Option D
101. What is the charge of the hole?
A. Equal to that of a proton
B. Equal to that of an electron
C. Equal to that of a neutron
D. Equal to zero
View Answer:
Answer: Option A
Solution:
102. It is the current gain for the common-emitter configuration
A. α
B. β
C. δ
D. ρ
View Answer:
Answer: Option B
Solution:
103. when a factor a junction transistor is 0.98,the factor would be equivalent to ________
value of transistor’s beta.
A. 49
B. 60
C. 20
D. 38
View Answer:
Answer: Option A
Solution:
104. An emitter resistor is used for ________ in most amplifier circuits.
A. Temperature stabilization
B. Biasing a bipolar junction transistor
C. Current limitation
D. Voltage amplification
View Answer:
Answer: Option B
Solution:
105. What line is drawn between the open-circuit current on a JFET characteristic curve?
A. Operating point
B. Load line
C. Tangent line
D. Quiescent point
View Answer:
Answer: Option B
Solution:
106. Which of the choices below is another name for a photoconductive cell?
A. Varicap
B. Varistor
C. Photoresistive device
D. Photodiode
View Answer:
Answer: Option C
Solution:
107. When both emitter and collector junctions are reverse biased, the transistor is said to be
at _______ region.
A. Active
B. Cut-off
C. Saturation
D. Amplifying
View Answer:
Answer: Option B
Solution:
108. What type of diode is used for tuning receivers and is normally operated with reverse
bias and derived its name from voltage variable capacitor?
A. Hot-carrier diode
B. Varactor diode
C. Tunnel diode
D. Zener diode
View Answer:
Answer: Option B
Solution:
109. What silicon npn tetrode serves as bistable negative-resistance device?
A. BJT
B. Binistor
C. FET
D. Thermistor
View Answer:
Answer: Option B
Solution:
110. A multiple-terminal solid-state device similar to a transistor that generates frequencies

up to about 10000 MHz by injecting electrons or holes into a space-charge layer which rapidly
forces these carriers to a collecting electrode.
A. Magnetron
B. IMPATT
C. Klystron
D. Spacistor
View Answer:
Answer: Option D
Solution:
111. Which of the items below is not a good conductor?
A. Electrolytes
B. Ionized gases
C. Silicon
D. Silver
View Answer:
Answer: Option C
Solution:
112. What is the net charge if a certain semiconductor losses 4 valence electrons?
A. +4
B. -4
C. +8
D. -8
View Answer:
Answer: Option A
Solution:
113. What is the net charge if a certain semiconductor gains one valence electron?
A. +1
B. -1
C. +4
D. -4
View Answer:
Answer: Option B
Solution:
114. What is the approximate voltage drop of LED?
A. 0.3 V
B. 0.7 V
C. 1.5 V
D. 3.8 V
View Answer:
Answer: Option C
Solution:
115. Under standard conditions, pure germanium has a resistivity of
A. 60 Ω-cm
B. 60 Ω-m
C. 60 Ω-mm
D. 60 x 10^-4 cm
View Answer:
Answer: Option A
Solution:
116. The holding of one extreme amplitude of the input waveform to a certain amount of
potential is called
A. Slicing
B. Limiting
C. Rectifying
D. Clamping
View Answer:
Answer: Option D
Solution:
117. Clamper is also known as
A. DC restorer
B. Rectifier
C. Charger
D. Clipper
View Answer:
Answer: Option A
Solution:
118. Percentage ripple can be calculated by getting the _________ and multiplying the result
by100%.
A. Ratio of the input resistance and input voltage
B. Product of the ac current to dc current
C. Ratio of the ac voltage to dc voltage
D. Addition of the ac and dc component of the given signal
View Answer:
Answer: Option C
Solution:
119. Which of the following materials has the smallest leakage current?
A. Germanium
B. Carbon
C. Sulfur
D. Silicon
View Answer:
Answer: Option D
Solution:
120. What refers to annihilation of a hole and electron?
A. Doping
B. Recombination
C. Diffusion
D. Bonding
View Answer:
Answer: Option B
121. What are the two possible breakdown mechanisms in pn junction diodes?
A. Reverse and breakdown effects
B. Threshold and knee effects
C. Avalanche and forward effects
D. Zener and avalanche effects
View Answer:
Answer: Option B
Solution:
122. What occurs in pn diodes when the electric field in the depletion layer increases to the
point where it can break covalent bonds and generate electron hole pairs?
A. Covalent breakdown
B. Diffusion
C. Zener breakdown
D. Avalanche effect
View Answer:
Answer: Option C
Solution:
123. The amount of additional energy required to emit an electron from the surface of metal
is called
A. Potential barrier
B. Junction voltage
C. Work function
D. Knee voltage
View Answer:
Answer: Option C
Solution:
124. When temperature of a pure semiconductor is increased, its resistance
A. Decreases
B. Remains the same
C. Increases
D. Cannot be estimated
View Answer:
Answer: Option A
Solution:
125. As a general rule, ________ are found only in semiconductors.
A. Electrons
B. Bulk resistances
C. Depletion layers
D. Holes
View Answer:
Answer: Option D
Solution:
126. What in a semiconductor is defined as the incomplete part of an electron pair bond?
A. Hole
B. Valence electron
C. Impurity
D. Ion
View Answer:
Answer: Option A
Solution:
127. When the number of free electrons is increased in doped semiconductor, it becomes
a/an ________ semiconductor.
A. N type
B. P type
C. PN type
D. NP type
View Answer:
Answer: Option A
Solution:
128. Reducing the number of free electrons in a doped semiconductor forms a/an _________
semiconductor.
A. N type
B. P type
C. PNPN type
D. NPN type
View Answer:
Answer: Option B
Solution:
129. Pure semiconductor atoms contain how many valence electrons?
A. 1
B. 2
C. 4
D. 8
View Answer:
Answer: Option C
Solution:
130. An acceptor atom contains how many valence electrons?
A. 1
B. 2
C. 3
D. 4
View Answer:
Answer: Option C
Solution:
131. What is the resistivity of an extrinsic semiconductor?
A. 1 Ω-cm
B. 2 Ω-cm
C. 3 Ω-cm
D. 4 Ω-cm
View Answer:
Answer: Option B
Solution:
132. The forward resistance crystal diode is in the order of
A. Ω
B. mΩ
C. µΩ
D. kΩ
View Answer:
Answer: Option A
Solution:
133. What is the ideal value stability factor?
A. 1
B. 0.5
C. Infinite
D. 100
View Answer:
Answer: Option A
Solution:
134. What is the approximate mass of a neutron at rest?
A. 1.6726 x 10^-27 kg
B. 9.1096 x 10^-31 kg
C. 1.6022 x 10^-19 kg
D. No mass
View Answer:
Answer: Option A
Solution:
135. Approximate mass at rest of a proton is _________ to that of a neutron.
A. Greater than
B. Equal
C. Less than
D. Comparable
View Answer:
Answer: Option B
Solution:
136. Charge of an electron is approximately equal to
A. 1.6022 x 10^-19 C
B. -1.6726 x 10^-27 C
C. -1.6022 x 10^-19 C
D. No charge
View Answer:
Answer: Option C
Solution:
137. What capacitors are used in transistor amplifiers?
A. Mica
B. Air
C. Electrolytic
D. Paper
View Answer:
Answer: Option C
Solution:
138. What is the reason why a common collector is used for impedance matching?
A. Its output impedance is very high
B. Its output impedance is very low
C. Its input impedance is very low
D. Its input impedance is very high
View Answer:
Answer: Option D
Solution:
139. In power supplies, circuits that are employed in separating the ac and dc components
and bypass the ac components around the load, or prevent their generation are called
A. Filters
B. Limiters
C. Series capacitors
D. Diode circuits
View Answer:
Answer: Option C
Solution:
140. A nuclei with a common number of protons, but with different number of neutrons
A. Fission
B. Isotope
C. Atom
D. Core
View Answer:
Answer: Option B
Solution:
141. What is the reason why FET has high input impedance?
A. Because its input is a forward biased
B. Because of the impurity atoms
C. Because its input is reverse biased
D. Because it is made of semiconductor material.
View Answer:
Answer: Option C
142. A MOSFET is sometimes called _________ FET.
A. Open gate
B. Shorted gate
C. Metallic gate
D. Insulated gate
View Answer:
Answer: Option D
Solution:
143. Which of the following choices is an advantage of a MOSFET over a BJT in an RF amplifier
circuit?
A. Low voltage operation
B. Low noise
C. Low amplification of signals
D. Compatibility
View Answer:
Answer: Option B
Solution:
144. The voltage gain of an emitter follower circuit is
A. High
B. Low
C. Very high
D. Moderate
View Answer:
Answer: Option B
Solution:
145. A _________ is considered a current controlled device.
A. Diode
B. Field effect transistor
C. Transistor
D. Resistor
View Answer:
Answer: Option C
Solution:
146. A ________ is considered a voltage controlled device
A. FET
B. Diode
C. Transistor
D. Capacitor
View Answer:
Answer: Option A
Solution:
147. The value of coupling capacitor, Cc in RC coupling is about
A. 0.01 µF
B. 0.1 µF
C. 10 µF
D. 100 µF
View Answer:
Answer: Option C
Solution:
148. FET has a pinch-off voltage of about
A. 0.5 V
B. 5 V
C. 10 V
D. 20 V
View Answer:
Answer: Option B
Solution:
149. What is the point of intersection between a diode characteristic and a load line?
A. Q point
B. Quiescent point
C. Operating point
D. All of these
View Answer:
Answer: Option D
Solution:
150. A measure of the ability of an LED to produce the desired number of lumens generated
per applied watt of electrical energy.
A. Luminous intensity
B. Luminous efficiency
C. Luminous efficacy
D. Luminous ability
View Answer:
Answer: Option C
151. Photoconductive effect means
A. The decreased conductivity of an illuminated semiconductor junction
B. The increased conductivity of an illuminated semiconductor junction
C. The conversion of photonic energy to electromagnetic energy
D. The conversion of an electromagnetic energy to photonic energy
View Answer:
Answer: Option B
Solution:
152. What happens to the photoconductive material when light strikes on it?
A. The conductivity of the material decreases
B. Nothing important happens

C. The conductivity of the material stays the same
D. The conductivity of the material increases
View Answer:
Answer: Option D
Solution:
153. What type of diode is used for tuning receivers; operate with reverse bias and derived its
name from voltage-variable capacitor?
A. Zener diode
B. Tunnel diode
C. Varactor diode
D. Crystal diode
View Answer:
Answer: Option C
Solution:
154. What semiconductor material is used in the construction of LED?
A. Silicon
B. Germanium
C. Gallium
D. Gallium arsenide
View Answer:
Answer: Option D
Solution:
155. What is approximately the sum of the number of protons and neutrons of an atom?
A. Atomic mass
B. Atomic number
C. Atom subscript
D. Valence shell
View Answer:
Answer: Option A
Solution:
156. What is the number of protons in the nucleus or the number of electrons in an atom?
A. Atomic mass
B. Atomic weight
C. Atomic number
D. Free electrons
View Answer:
Answer: Option C
Solution:
157. The charge of proton has the same value to that of an electron but
A. Opposite in sign
B. Greater in some cases
C. Lesser than in some cases
D. Usually not important
View Answer:
Answer: Option A
Solution:
158. Mass of proton or neutron is __________ times that of an electron.
A. 1386
B. 2000
C. 1836
D. 10
View Answer:
Answer: Option C
Solution:
159. A photodiode which conducts current only when forward biased and is exposed to light.
A. LAD
B. LED
C. PIN
D. Photoconductor
View Answer:
Answer: Option A
Solution:
160. What is the most commonly used color of an LED?
A. Orange
B. Blue
C. Red
D. Green
View Answer:
Answer: Option C
Solution:
161. If the temperature of a semiconductor material increases, the number of free electrons
A. Decreases
B. Increases
C. Remains the same
D. Becomes zero
View Answer:
Answer: Option B
Solution:
162. Varactor diode’s transition capacitance is directly proportional to the product of the
permittivity of the semiconductor material and PN junction area but inversely proportional to
its
A. Resistance
B. Voltage
C. Depletion width
D. Threshold voltage
View Answer:
Answer: Option C
Solution:
163. A __________ is a light-sensitive device whose number of free electrons generated is

proportional to the intensity of the incident light.
A. Varicap
B. Photodiode
C. Schottky diode
D. LED
View Answer:
Answer: Option B
Solution:
164. Which of the following is NOT one of the three distinct regions in the characteristic curve
of a diode?
A. Forward bias region
B. Reverse bias region
C. Breakdown region
D. Saturation region
View Answer:
Answer: Option D
Solution:
165. Another name for saturation current in a diode, which arises from the fact that it is
directly proportional to the cross-sectional are of the diode.
A. Steady-state current
B. Constant current
C. Thermal current
D. Scale current
View Answer:
Answer: Option D
Solution:
166. How much voltage would you measure across the base-emitter junction of a silicon
transistor at class A?
A. 0 V
B. 0.3 V
C. 3.6 V
D. 0.7 V
View Answer:
Answer: Option D
Solution:
167. In an amplifier, the emitter junction is
A. Forward biased
B. Reverse biased
C. Grounded
D. Shorted
View Answer:
Answer: Option A
Solution:
168. A manufacturer quotes in his specifications that a germanium diode conducts 50 mA at 1

volt. Determine the bulk resistance.
A. 100 ohms
B. 60 ohms
C. 14 ohms
D. 20 ohms
View Answer:
Answer: Option C
Solution:
169. A silicon diode has a maximum allowable junction temperature of 150ºC. Find the
maximum allowable power dissipation at 25ºC temperature if the diodes thermal resistance
is 0.4 ºC/mW.
A. 238 mW
B. 313 mW
C. 600 mW
D. 117 mW
View Answer:
Answer: Option B
Solution:
170. What is the principal characteristic of a zener diode?
A. A constant current under conditions of varying voltage
B. A high forward current rating
C. A constant voltage under conditions of carrying current
D. A very high PIV
View Answer:
Answer: Option C
Solution:
171. What device whose internal capacitance varies with the applied voltage?
A. Zener diode
B. Photodiode
C. Tunnel diode
D. Varactor diode
View Answer:
Answer: Option D
Solution:
172. The ________ transistor configuration has the highest value of input resistance.
A. Common base
B. Common emitter
C. Emitter-stabilized
D. Common collector
View Answer:
Answer: Option D
Solution:
173. A method of connecting amplifiers in cascade
A. Configuration
B. Coupling
C. Link
D. Stages
View Answer:
Answer: Option B
174. What is the largest region of a bipolar transistor?
A. Base
B. Emitter
C. Collector
D. P-region
View Answer:
Answer: Option C
Solution:
175. A diode that has a negative resistance region and widely used in the design of oscillators,
switching networks and pulse generators.
A. Hot-carrier diode
B. Tunnel diode
C. LED
D. Schottky diode
View Answer:
Answer: Option B
Solution:
176. Refers to a three-layer diode.
A. Shockley diode
B. Schottky diode
C. Diac
D. Triac
View Answer:
Answer: Option C
Solution:
177. Diode that operates in the reverse breakdown voltage and is used as a voltage regulator.
A. Varactor diode
B. PIN diode
C. Tunnel diode
D. Zener diode
View Answer:
Answer: Option C
Solution:
178. Another name for metal-oxide semiconductor field effect transistor is
A. JFET
B. GFET
C. IGFET
D. Transistor
View Answer:
Answer: Option C
Solution:
179. In enhancement-type MOSFETs, the __________ region is used if the FET is to operate as
an amplifier.
A. Triode region
B. Diode region
C. Cut-off region
D. Saturation region
View Answer:
Answer: Option D
Solution:
180. In enhancement-type MOSFETs, the __________ regions are used for operation as a
switch.
A. Triode and saturation
B. Cut-off and saturation
C. Saturation and active
D. Cut-off and triode
View Answer:
Answer: Option C
Solution:
181. Unijunction transistor has three terminals, namely
A. Gate, cathode and anode
B. Grid, plate and cathode

C. Base 1, base 2 and emitter
D. Gate, base 1 and base 2
View Answer:
Answer: Option C
Solution:
182. What two elements widely used in semiconductor devices exhibit both metallic and
nonmetallic characteristics?
A. Gold and silicon
B. Germanium and gold
C. Bismuth and galena
D. Silicon and germanium
View Answer:
Answer: Option D
Solution:
183. What happens to the voltage drop across the diode when current flow increases rapidly
in a forward-biased diode?
A. Increases
B. Decreases
C. Becomes zero instantly
D. Remains relatively constant
View Answer:
Answer: Option D
Solution:
184. What are the majority current carriers in the N-type silicon?
A. Free electrons
B. Holes
C. Bounded electrons
D. Protons
View Answer:
Answer: Option A
Solution:
185. What diode gives off light when energized?
A. Photodiode
B. LED
C. Photoconductive cell
D. Tunnel diode
View Answer:
Answer: Option B
Solution:
186. What are the solid state gallium arsenide devices that emit beam of radiant flux when
forward biased?
A. LEDs
B. Photoconductive cells
C. IR emitters
D. Photodiodes
View Answer:
Answer: Option C
Solution:
187. A graphical representation in transistor wherein the emitter current is plotted against
the variable emitter base voltage VEB for constant value of collector-base voltage VCB.
A. Static curve
B. Input characteristic curve
C. Output characteristic curve
D. Semilog curve
View Answer:
Answer: Option B
Solution:
188. When the collector current Ic is plotted against the collector base voltage at constant
emitter Ie, the curve obtain is called
A. Output characteristic curve
B. Linear curve
C. V-I curve
D. Semilog curve
View Answer:
Answer: Option A
Solution:
189. Eg for silicon is 1.12 eV and germanium is 0.72 eV. It can be concluded that
A. Less number of electron hole pairs will be generated in silicon than in germanium at room
temperature
B. More number of electrons and hole pairs will be generated in silicon than in germanium at
room temperature
C. High energy of charges is a property of silicon
D. The relationship of the two is not significant
View Answer:
Answer: Option A
Solution:
190. Junction diodes are commonly rated by its
A. Maximum current and PIV
B. Inductance and PIV
C. Capacitance and maximum reverse current
D. Circuits resistance and maximum forward current
View Answer:
Answer: Option A
Solution:
191. A special type of diode which is often used in RF switches, attenuators and various types
of phase shifting devices is called
A. Zener diode
B. PIN diode
C. Tunnel diode
D. Varactor diode
View Answer:
Answer: Option B
Solution:
192. A volt-ampere characteristic curve that describes the relationship of the output voltage
of a transistor to its output current is a set input current.
A. Input characteristic
B. Output characteristic
C. Load line
D. Saturation curve
View Answer:
Answer: Option B
Solution:
193. The use of __________ coupling is particularly desirable in low level, low noise audio
amplifier stages to minimize hum pick up from stray magnetic fields.
A. Transformer
B. Direct
C. RC
D. LC
View Answer:
Answer: Option C
Solution:
194. The way in which the gain of an amplifier varies with the frequency is called
A. Logarithmic response
B. Frequency response
C. Voltage response
D. Phase response
View Answer:
Answer: Option B
Solution:
195. The maximum rectification efficiency of a half wave rectifier is
A. 81.2 %
B. 40.6 %
C. 20.6 %
D. 25 %
View Answer:
Answer: Option B
Solution:
196. The maximum rectification efficiency of a full-wave rectifier is
A. 40.6 %
B. 81.2 %
C. 110 %
D. 92 %
View Answer:
Answer: Option B
Solution:
197. A coupled amplifier which has the major advantage of permitting power to be
transported from the relatively high output impedance of the first stage to the relative low
input impedance of the second stage.
A. RC coupling
B. Transformer coupling
C. Direct coupling
D. Stabilized coupling
View Answer:
Answer: Option B
Solution:
198. Electron mobility property of silicon at 300 K is approximately equal to __________

m^2/V-s
A. 1.1
B. 0.135
C. 0.048
D. 45
View Answer:
Answer: Option B
Solution:
199. In a push-pull power amplifier, an input transformer can be used as a __________

providing equal amplitude input signals opposite in polarity
A. Phase reversal
B. Phase-splitter
C. Limiter
D. Discriminator
View Answer:
Answer: Option B
Solution:
200. If the line frequency is 60 Hz, the output frequency of a bridge rectifier is
A. 30 Hz
B. 60 Hz
C. 120 Hz
D. 240 Hz
View Answer:
Answer: Option C
251. What is approximate mass of an electron at rest?
A. 9.1096 x 10^-31 kg
B. 1.6726 x 10^-27 kg
C. 1.6762 x 10^-31 kg
D. 1.7588 x 10^11 kg
View Answer:
Answer: Option A
Solution:
252. What term is used to describe the outermost shell of an atom?
A. Valence shell
B. Free shell
C. Electron shell
D. Conductive cell
View Answer:
Answer: Option A
Solution:
253. What are the electrons at the outermost shell which are usually weakly attracted by the
core such that an outside force can easily dislodge these electrons from the atom?
A. Free electrons
B. Orbiting electrons
C. Bound electrons
D. Loose electrons
View Answer:
Answer: Option A
Solution:
254. The reason why electrons are not pulled in the positive charged nucleus is because of the
___________ which usually became exactly equals the inward attraction of the nucleus.
A. Kinetic energy
B. Energy at rest
C. Centrifugal force
D. Frictional force
View Answer:
Answer: Option C
Solution:
255. Which of the following items is not a type of material?
A. Conductor
B. Semiconductor
C. Insulator
D. Diode
View Answer:
Answer: Option D
Solution:
256. The highest energy band of an atom which can be filled with electrons.
A. Valence band
B. Conduction band
C. Insulation band
D. Energy level
View Answer:
Answer: Option A
Solution:
257. An energy band in which electrons can move freely
A. Valence band
B. Conduction band
C. Energy gap
D. Insulation gap
View Answer:
Answer: Option B
Solution:
258. Approximate energy gap in insulator is
A. Eg ≥ 5 eV
B. Eg = 1.1 eV
C. Eg = 0.67 eV
D. Eg = 4 eV
View Answer:
Answer: Option A
Solution:
259. The energy gap for semiconductors made of silicon is
A. Eg = 5 eV
B. Eg = 1.1 eV
C. Eg = 0.67 eV
D. Eg = 4 eV
View Answer:
Answer: Option B
Solution:
260. The energy gap for germanium made semiconductor is
A. Eg = 5 eV
B. Eg = 1.1 eV
C. Eg = 0.67 eV
D. No energy gap
View Answer:
Answer: Option C
Solution:
261. What type of material usually has one valence electron?
A. Insulator
B. Semiconductor
C. Conductor
D. Transistor
View Answer:
Answer: Option C
Solution:
262. What type of material usually has four valence electrons?
A. Insulator
B. Semiconductor
C. Conductor
D. IGFET
View Answer:
Answer: Option B
Solution:
263. Which of the following is considered as the best conductor?
A. Gold
B. Silicon
C. Germanium
D. Mica
View Answer:
Answer: Option A
Solution:
264. Which of the items below is not taking place inside a silicon crystal?
A. Some free electrons and holes are being created by thermal energy
B. Other free electrons and holes are recombining
C. Some free electrons and holes exist in an in-between state
D. Some free electrons disappears in the lattice due to vaporization
View Answer:
Answer: Option D
265. It is an arrangement of silicon atoms combine to form a solid such that there are now 8
electrons in the valence shell.
A. Crystal
B. Bonding
C. Recombination
D. Solid silicon
View Answer:
Answer: Option A
Solution:
266. The sharing of valence electrons to produce a chemically stable atom
A. Bound electrons
B. Crystal
C. Covalent bond
D. Recombination
View Answer:
Answer: Option C
Solution:
267. The eight electrons which are tightly held by the atom are called
A. Valence electrons
B. Outermost electrons
C. Bound electrons
D. Covalent electrons
View Answer:
Answer: Option C
Solution:
268. When an atom has bound electrons, it is described as
A. All charges do recombination
B. Valence electrons disappear due to vaporization
C. Filled or saturated since valence orbit can hold not more than 8 electrons
D. Merging of electrons and other particles
View Answer:
Answer: Option C
Solution:
269. What refers to the temperature of the surrounding air?
A. Atmospheric temperature
B. Ambient temperature
C. Freezing point
D. Cooling temperature
View Answer:
Answer: Option B
Solution:
270. What term is used to describe the released electrons dislodged from its original shell due
to the increase in temperature which joins into a larger orbit?
A. Free electrons
B. Bound electrons
C. Covalent electrons
D. Merge electrons
View Answer:
Answer: Option A
Solution:
271. What term is used to refer to the vacancy left by the free electron when it departs from
its original shell?
A. Proton
B. Hole
C. Neutron
D. Nucleus
View Answer:
Answer: Option B
Solution:
272. The merging of a free electron and a hole inside the silicon crystal
A. Covalent bond
B. Recombination
C. Merged electron
D. Valence bond
View Answer:
Answer: Option B
Solution:
273. The amount of time between the creation and disappearance of a free electron.
A. Recombination time
B. Bonding time
C. Lifetime
D. Propagation time
View Answer:
Answer: Option C
Solution:
274. The purpose of adding an impurity atom to an intrinsic crystal is
A. To alter its insulating property
B. To increase its electric conductivity
C. To stop conduction
D. To increase the resistivity of the semiconductor material
View Answer:
Answer: Option B
Solution:
275. An extrinsic semiconductor produces ___________ when a pentavalent atom is added to
the molten silicon
A. Intrinsic
B. P-type
C. N-type
D. Hybrid type
View Answer:
Answer: Option C
Solution:
276. Which of the items below is not a pentavalent atom?
A. Phosphorus
B. Aluminum
C. Antimony
D. Arsenic
View Answer:
Answer: Option B
Solution:
277. What extrinsic semiconductor is produced when a trivalent atom is added to the molten
silicon?
A. Aluminum
B. N-type
C. P-type
D. Holes
View Answer:
Answer: Option C
Solution:
278. The reduction of power handling capability of the diode due to the increase of ambient
temperature form room temperature.
A. Maximum junction temperature
B. Linear power derating factor
C. Power factor
D. Amplification factor
View Answer:
Answer: Option B
Solution:
279. The maximum temperature the diode can operate before burning.
A. Maximum dissipation factor
B. Maximum junction temperature
C. Ambient temperature
D. Boiling temperature rating
View Answer:
Answer: Option B
Solution:
280. Reverse recovery time of the diode is computed as the ___________ of the storage time
and transition interval from the forward to reverse bias.
A. Sum
B. Product
C. Quotient
D. Difference
View Answer:
Answer: Option A
Solution:
281. The nucleus of a copper atom contains how many protons?
A. 2
B. 1
C. 18
D. 29
View Answer:
Answer: Option D
Solution:
282. How many protons does the nucleus of a silicon atom contain?
A. 4
B. 14
C. 29
D. 32
View Answer:
Answer: Option D
Solution:
283. An intrinsic semiconductor has some holes in it at room temperature. What causes these
holes?
A. Doping
B. Thermal energy
C. Free electrons
D. Valence electrons
View Answer:
Answer: Option B
284. When a diode is forward biased, the recombination of free electrons and holes may
produce _______?
A. Heat
B. Light
C. Radiation
D. All of these
View Answer:
Answer: Option D
Solution:
285. Which of the following doping elements have a valence of 5?
A. Gallium
B. Boron
C. Aluminum
D. Phosphorous
View Answer:
Answer: Option D
Solution:
A. Arsenic
B. Gallium
C. Aluminum
D. Silicon
View Answer:
Answer: Option D
Solution:
A. Gallium
B. Boron
C. Aluminum
D. Phosphorous
View Answer:
Answer: Option B
Solution:
288. It is a stable positive charge in the nucleus that is not free to move
A. Hole
B. Proton
C. Neutron
D. Electron
View Answer:
Answer: Option B
Solution:
289. A positive charge outside the nucleus which is present only in semiconductor due to
unfilled covalent bonds.
A. Electron
B. Proton
C. Hole
D. Neutron
View Answer:
Answer: Option C
Solution:
290. When charges are forced to move by the electric field of a potential difference,
___________ current is said to flow.
A. Reverse
B. Drift
C. Leakage
D. Threshold
View Answer:
Answer: Option B
Solution:
291. When PN junction is connected to a battery in such a way that P-side is connected to
positive terminal of the battery and negative terminal to N-side, this connections is known as
A. Forward bias
B. Reverse bias
C. Back bias
D. Knee bias
View Answer:
Answer: Option A
Solution:
292. When PN junction is connected to a battery in such a way that P-side is connected to
negative terminal of the battery and positive terminal to N-side, this connections is known as
A. Forward bias
B. Reverse bias
C. Depletion connection
D. Positive bias
View Answer:
Answer: Option B
Solution:
293. An electron in the conduction band
A. Losses its charge easily
B. Jumps to the tip of the crystal
C. Has higher energy than the electron in the valence band
D. Has lower energy that the electron in the valence band
View Answer:
Answer: Option C
Solution:
294. An ideal diode
A. Should have a zero resistance in the forward bias as well as in reverse bias
B. Should have an infinitely large resistance in the forward bias and zero resistance in reverse
bias
C. Should have zero resistance in forward bias and an infinitely large resistance in reverse bias
D. Should have infinitely large resistance in forward as well as reverse bias
View Answer:
Answer: Option C
Solution:
295. Thermal voltage Vt is approximately equal to ___________ at room temperature (20ºC)

A. 25 mV
B. 25 V
C. 100 mV
D. 100 V
View Answer:
Answer: Option A
Solution:
296. Boltzmann’s constant is equivalent to
A. 1.62 x 10^-18 C
B. 8032 x 10^-5 eV/°K
C. 0.7 V
D. 1.3 x 10^8 V/m
View Answer:
Answer: Option B
Solution:
297. The preferred form of biasing a JFET amplifier is through the
A. Voltage divider bias
B. Gate bias
C. Self bias
D. Source bias
View Answer:
Answer: Option A
Solution:
298. The gate-to0source on voltage if an n-channel enhancement mode MOSFET is

A. Less than Vth
B. Equal to Vgs(off)
C. Greater than VDS(on)
D. Greater than VGS(th)
View Answer:
Answer: Option B
Solution:
299. A mechanism for carrier motion in semiconductors which occurs when an electric field is
applied across a piece of silicon
A. Carrier diffusion
B. Carrier drift
C. Recombination
D. Diffusivity
View Answer:
Answer: Option B
Solution:
300. What occurs in pn diodes when the minority carriers that cross the depletion region
under the influence of the electric field gain sufficient kinetic energy to be able to break
covalent bonds in atoms with which they collide?
A. Drift
B. Avalanche breakdown
C. Diffusion
D. Saturation
View Answer:
Answer: Option B
301. The name of pure semiconductor material that has an equal number of electrons and
holes
A. n-type
B. pure type
C. intrinsic
D. p-type
View Answer:
Answer: Option C
Solution:
302. Elements that has four valence electrons are classified as
A. conductor
B. insulator
C. elemental semiconductor
D. compound semiconductor
View Answer:
Answer: Option C
Solution:
303. An example of an elemental semiconductor.
A. Germanium (Ge)
B. Gallium Arsenide (GaAs)
C. Gallium Phosphide (GaP)
D. Aluminum Arsenide (AlAs)
View Answer:
Answer: Option A
Solution:
304. Which of the following is an example of a compound semiconductor?
A. Gallium Arsenide (GaAs)
B. Gallium Phosphide (GaP)
C. Aluminum Arsenide (AlAs)
D. All of the above
View Answer:
Answer: Option D
Solution:
305. Germanium has an atomic number of 32 and an atomic weight of approximately 72 amu.
How many electrons, protons and neutrons are there?
A. 32, 32, 40
B. 32, 32, 104
C. 40, 32, 32
D. 40, 32, 104
View Answer:
Answer: Option A
Solution:
306. The chemical bond that is present in a crystal lattice of silicon atoms.
A. covalent bond
B. electrovalent bond
C. ionic bond
D. metallic bond
View Answer:
Answer: Option A
Solution:
307. The atomic weight of a silicon atom is approximately 28 amu. How many electrons,
protons and neutrons does the atom consist?
A. 14, 42, 14
B. 14, 14, 42
C. 42, 14, 14
D. 14, 14, 14
View Answer:
Answer: Option D
Solution:
308. What is the total charge at the nucleus of silicon atom?
A. -12e C
B. 12e C
C. -14e C
D. 14e C
View Answer:
Answer: Option D
Solution:
309. In materials, what do you call the area that separates the valence band and the
conduction band?
A. energy gap
B. forbidden band
C. insulation band
D. A and B are correct

View Answer:
Answer: Option B
Solution:
310. At absolute zero temperature, semiconductor acts as
A. an insulator
B. a conductor
C. a semi-insulator
D. usual
View Answer:
Answer: Option A
Solution:
311. The electron flow in a semiconductor material is
A. opposite in direction of hole flow
B. the same direction with hole flow
C. the drift current
D. known as the conventional current
View Answer:
Answer: Option A
Solution:
312. Typical range of the resistivity of a semiconductor
A. 10^-15 – 10^-18 Ω-cm
B. 10^-5 – 10^-8 Ω-cm
C. 10 – 10^4 Ω-cm
D. 10^8 – 10^15 Ω-cm

View Answer:
Answer: Option C
Solution:
313. Chemical bond that is significant in metals
A. ionic bonding
B. electrovalent bonding
C. covalent bonding
D. metallic bonding
View Answer:
Answer: Option D
Solution:
314. A semiconductor that is free from impurities
A. intrinsic semiconductor
B. extrinsic semiconductor
C. compensated semiconductor
D. elemental semiconductor
View Answer:
Answer: Option A
315. The process of adding impurities in a semiconductor material.
A. growing
B. diffusion
C. doping
D. depleting
View Answer:
Answer: Option C
Solution:
316. Impurities with five valence electrons.
A. acceptor
B. donor
C. trivalent
D. pentavalent
View Answer:
Answer: Option D
Solution:
317. Example of acceptor impurities.
A. pentavalent impurities
B. trivalent impurities
C. tetravalent impurities
D. hexavalent impurities
View Answer:
Answer: Option B
Solution:
318. If the substance used in doping has less than four valence electrons, it is known as
A. acceptor
B. donor
C. trivalent
D. pentavalent
View Answer:
Answer: Option A
Solution:
319. Commonly used as donor impurities.
A. Antimony (Sb)
B. Arsenic (As)
C. Phosphorus (P)
D. all of the above
View Answer:
Answer: Option D
Solution:
320. Example of trivalent impurities.
A. Boron (B)
B. Gallium (Ga)
C. Indium (In)
D. all of the above
View Answer:
Answer: Option D
Solution:
321. Donor-doped semiconductor becomes a
A. N-type semiconductor
B. good conductor
C. p-n semiconductor
D. P-type semiconductor
View Answer:
Answer: Option A
Solution:
322. What do you call a semiconductor that is doped with both donor and acceptor
impurities?
A. double doped semiconductor
B. compensated semiconductor
C. compound semiconductor
D. diffused semiconductor
View Answer:
Answer: Option B
Solution:
323. The resistance of a semiconductor is known as
A. bulk resistance
B. intrinsic resistance
C. extrinsic resistance
D. dynamic resistance
View Answer:
Answer: Option A
Solution:
324. The most extensively used semiconductor.
A. silicon
B. germanium
C. gallium phosphide
D. gallium arsenide
View Answer:
Answer: Option A
Solution:
325. Semiconductor whose electron and hole concentrations are equal.
A. extrinsic semiconductor
B. intrinsic semiconductor
C. compensated semiconductor
D. doped semiconductor
View Answer:
Answer: Option B
Solution:
326. Silicon is widely used over germanium due to its several advantages, what do you think
is its most significant advantage?
A. abundant
B. cheap
C. temperature stable
D. low leakage current
View Answer:
Answer: Option D
Solution:
327. Current flow in a semiconductor that is due to the applied electric field.
A. diffusion current
B. conventional current
C. drift velocity
D. drift current
View Answer:
Answer: Option D
Solution:
328. The movement of charge carriers in a semiconductor even without the application of
electric potential.
A. diffusion current
B. conventional current
C. drift current
D. saturation current
View Answer:
Answer: Option A
Solution:
329. Typically, how much energy is required for a valence electron to move to the conduction
band for a doped semiconductor?
A. 0 eV
B. 0.05 eV
C. 1.0 eV
D. 5.0 eV
View Answer:
Answer: Option B
Solution:
330. Conduction of electrons in a doped semiconductor happens at
A. conduction band
B. forbidden band
C. valence band
D. nuclei band
View Answer:
Answer: Option A
Solution:
331. Theoretically, where does the conduction of holes occur in a doped semiconductor?
A. conduction band
B. forbidden band
C. valence band
D. empty band
View Answer:
Answer: Option C
Solution:
332. In energy band diagram of a doped semiconductor, the donor level
A. is near the valence band
B. is near the conduction band
C. is exactly in between the valence and conduction band
D. depends on the amount of doping
View Answer:
Answer: Option B
Solution:
333. The acceptor level in a doped semiconductor
A. is near the valence band level
B. is near the conduction level

C. is exactly in between the conduction and valence band
D. will depend on the concentration of doping
View Answer:
Answer: Option A
Solution:
334. In a semiconductor material, what will happen to the number of free electrons when the
temperature rises?
A. increases
B. decreases exponentially
C. decreases
D. remains the same
View Answer:
Answer: Option A
Solution:
335. The electrical resistance of a semiconductor material will ________ as the temperature
increases.
A. increase
B. increase exponentially
C. decrease
D. not change
View Answer:
Answer: Option C
336. The potential required to removed a valence electron
A. valence potential
B. threshold potential
C. critical potential
D. ionization potential
View Answer:
Answer: Option D
Solution:
337. Among the given elements, which is considered as nonmetal?
A. silicon (Si)
B. germanium (Ge)
C. tin (Sn)
D. lead (Pb)
View Answer:
Answer: Option A
Solution:
338. A semiconductor that is classified as a metalloid or semi-metal
A. silicon (Si)
B. germanium (Ge)
C. tin (Sn)
D. carbon (C)
View Answer:
Answer: Option B
Solution:
339. Semiconductor that is very rare, it only occurs in minute quantities in many metal
sulfides
A. silicon (Si)
B. germanium (Ge)
C. tin (Sn)
D. lead (Pb)
View Answer:
Answer: Option B
Solution:
340. Compound semiconductors are also known as
A. compensated semiconductors
B. amorphous semiconductors
C. organic semiconductors
D. inner-mettalic semiconductors
View Answer:
Answer: Option D
Solution:
341. What semiconductor that is mostly used in devices requiring the emission or absorption
of lights?
A. amorphous semiconductor
B. organic semiconductor
C. compound semiconductor
D. elemental semiconductor
View Answer:
Answer: Option C
Solution:
342. For high-speed integrated circuit, which semiconductor material given below is best to
be used?
A. silicon
B. germanium
C. carbon
D. gallium arsenide
View Answer:
Answer: Option D
Solution:
343. How much impurity concentration is needed for a sample of silicon to change its
electrical property from a poor conductor to a good conductor?
A. one part per hundred
B. one part per thousand
C. one part per million
D. one part per billion
View Answer:
Answer: Option C
Solution:
344. The restriction of certain discrete energy levels in a semiconductor material can be
predicted generally by using what model?
A. Bohr model
B. string model
C. wave model
D. particle model
View Answer:
Answer: Option A
Solution:
345. Is defined as the energy acquired by an electron moving through a potential of one volt.
A. electron Joules (eJ)
B. electron-potential
C. oxidation potential
D. electron Volt (eV)
View Answer:
Answer: Option D
Solution:
346. At room temperature, in a perfect silicon crystal, the equilibrium concentration of

thermally generated electrons in the conduction band is about
A. 1.5 x 10^5 per cubic cm.
B. 1.5 x 10^10 per cubic cm.
C. 1.5 x 10^15 per cubic cm.
D. 1.5 x 10^20 per cubic cm.
View Answer:
Answer: Option B
Solution:
347. What is the basis in operation of semiconductor photoconductors?
A. EHP generation
B. EHP degeneration
C. EHP optical degeneration
D. EHP optical generation
View Answer:
Answer: Option D
Solution:
348. The semiconductor that is used in xerography
A. selenium (Se)
B. gallium phosphide (GaP)
C. cadmium compound
D. organic semiconductor
View Answer:
Answer: Option A
Solution:
349. A silicon material has an intrinsic concentration ni=10^10 per cubic centimeter at room
temperature. If it is doped with 10^15 antimony atoms per cubic centimeter, what is now the
approximate electron concentration at the conduction band?
A. 10^5 electrons
B. 10^10 electrons
C. 10^15 electrons
D. 10^20 electrons
View Answer:
Answer: Option C
Solution:
350. When an electron at the conduction band falls back to the valence band it will
recombine with the hole. This is known as
A. regeneration
B. reunion
C. combination
D. recombination
View Answer:
Answer: Option D
351. Which semiconductor is mostly used to detect near infrared?
A. silicon
B. germanium
C. carbon
D. silicon carbide
View Answer:
Answer: Option D
Solution:
352. What semiconductor that is good for high-temperature applications?
A. indium antimonide (InSb)
B. gallium anitmonide (GaSb)
C. silicon carbide (SiC)
D. diamond (C)
View Answer:
Answer: Option A
Solution:
353. Among the given semiconductors below, which has the highest mobility?
A. silicon
B. germanium
C. gallium arsenide
D. indium antimonide
View Answer:
Answer: Option D
Solution:
354. A semiconducting glass is known as
A. isomorphous semiconductor
B. amorphous semiconductor
C. organic semiconductor
D. compound semiconductor
View Answer:
Answer: Option B
Solution:
355. For an electroluminescent of green and red lights, which semiconductor is best?
A. silicon carbide
B. gallium arsenide
C. indium antimonide
D. gallium phosphide
View Answer:
Answer: Option D
Solution:
356. Typical range of power dissipation for a semiconductor to be considered as “low power”
or “small signal”
A. less than 1 watt
B. 5 < P < 10 watts
C. 10 < P < 20 watts
D. 20 watts above
View Answer:
Answer: Option A
Solution:
357. In the design of high power semiconductor devices, it involves what factors?
A. making the size of the semiconductor bigger
B. packing the device into a bigger case
C. excellent contact between the semiconductor and the case
D. all of the above
View Answer:
Answer: Option D
Solution:
358. How to have a better high-frequency response in designing semiconductor devices?
A. make the chip as small as possible
B. the leads should be made shorter and smaller
C. smaller packaging
D. all of the above
View Answer:
Answer: Option D
Solution:
359. Before an electron can participate in the conduction of electricity, it must leave from the
valence band and transfer to the conduction band. Transferring to the conduction band
involves energy acquisition by an electron from external sources and this energy must be
greater than the energy gap of the material. Which semiconductor material has the highest
energy gap?
A. Zinc Sulfide (ZnS)
B. silicon (Si)
C. germanium (Ge)
D. Indium Antimonide (InSb)
View Answer:
Answer: Option A
Solution:
360. Which of the following semiconductors has the smallest energy gap?
A. ZnS
B. Si
C. Ge
D. InSb
View Answer:
Answer: Option D
Solution:
361. The ease with which a charge carrier (electron or hole) moves in a semiconductor
material is known as mobility. It is also defined as the average drift velocity of electrons and
holes per unit electrostatic field. Which of the semiconductor materials has the highest value
of electron-mobility?
A. InSb
B. Ge
C. Si
D. AlP
View Answer:
Answer: Option A
Solution:
362. In semiconductor materials, electrons have a higher value of mobility than holes, but
which semiconductor material has the slowest electron-mobility?
A. InSb
B. GaP
C. GaAs
D. AlP
View Answer:
Answer: Option D
Solution:
363. Solar cell is a semiconductor electric-junction device, which absorbs the radiant energy
of sunlight and converts it directly and efficiently into electrical energy. This device, uses
what type of semiconductor materials?
A. single-crystal silicon
B. amorphous or polycrystalline silicon
C. GaAs, CdS, CdTe, CuS
D. all of the above
View Answer:
Answer: Option D
Solution:
364. What is formed when n-type and p-type semiconductors are brought together?
A. pn junction
B. semiconductor junction
C. energy band gap
D. semiconductor diode
View Answer:
Answer: Option A
Solution:
365. PN junction acts as a one way valve for electrons because _________.
A. the circuit in which the diode is used, only attempts to pump electrons in one diode
B. electrons tend to follow the direction of the hole
C. there is a little mechanical switch inside a diode
D. when electrons are pump from P to N, free electrons and holes are force apart leaving no
way for electrons to cross the junction
View Answer:
Answer: Option D
Solution:
366. The device that is formed when an n-type and p-type semiconductors are brought
together
A. pn junction
B. semiconductor junction
C. depletion region
D. junction diode
View Answer:
Answer: Option D
Solution:
367. An external voltage applied to a junction reduces its barrier and aid current to flow
through the junction
A. reverse bias
B. external bias
C. junction bias
D. forward bias
View Answer:
Answer: Option D
Solution:
368. A device containing an anode and a cathode or a pn junction of a semiconductor as the

principal elements and provides unidirectional conduction.
A. diode
B. diac
C. triode
D. triac
View Answer:
Answer: Option A
369. Unidirectional conduction in two-electrodes in any device other than a diode, such that
rectification between the grid and cathode of a triode, or asymmetrical conduction between
the collector and base of a transistor is called
A. rectification
B. diode action
C. clipping
D. clamping
View Answer:
Answer: Option B
Solution:
370. The p-type material in a semiconductor junction diode is technically termed as
A. positive terminal
B. negative terminal
C. cathode
D. anode
View Answer:
Answer: Option D
Solution:
371. Cathode in a semiconductor junction diode is referred to the
A. positive terminal
B. junction
C. p-type terminal
D. n-type terminal
View Answer:
Answer: Option D
Solution:
372. The area in the semiconductor diode where there are no charge carriers
A. depletion layer
B. depletion region
C. depletion mode
D. depletion area
View Answer:
Answer: Option B
Solution:
373. Depletion region is an area in a semiconductor device where there are no charge carriers
exist. This will be always near the junction of n-type and p-type materials. What causes this
junction to be depleted by charge carriers?
A. Due to the recombination of holes and electrons at the junction
B. Due to the cancellation of positively charge protons and negatively charge electrons
C. Due to the annihilation of charge carriers

D. Due to the combination of positively charge holes and negatively charge electrons
View Answer:
Answer: Option D
Solution:
374. A junction diode is said to be forward-biased if
A. Anode is supplied more positive than the cathode.
B. Anode is supplied more negative than the cathode.
C. A voltage greater than threshold is applied, with cathode less positive than anode.
D. A voltage greater than threshold is applied, with cathode less negative than anode.
View Answer:
Answer: Option C
Solution:
375. What do you call the very small amount of current that will flow in the diode when it is
reverse biased?
A. saturation current
B. reverse saturation current
C. cut-off current
D. holding current
View Answer:
Answer: Option B
Solution:
376. When the diode is supplied with forward direction potentials but with a magnitude less
than the threshold voltage of the diode, still it will not “turn-on” and will only allow a very
small amount of current to pass. This very small current is known
A. as leakage current
B. as forward saturation current
C. as holding current
D. as cut-off current
View Answer:
Answer: Option D
Solution:
377. The minimum voltage required before a diode can totally conduct in a forward direction.
A. triggering voltage
B. breakdown voltage
C. saturation voltage
D. threshold voltage
View Answer:
Answer: Option D
Solution:
378. What will happen to the threshold voltage of the diode when it operates at higher
temperatures.
A. increases
B. increases exponentially
C. decreases
D. decreases exponentially
View Answer:
Answer: Option C
Solution:
379. The forward current in a conducting diode will ______________ as the operating
temperature increases.
A. not be affected
B. decrease
C. decrease exponentially
D. increase
View Answer:
Answer: Option D
Solution:
380. As the operating temperature of a reverse-biased diode is increased, its leakage or

reverse saturation current will
A. Increase
B. increase exponentially
C. decrease
D. decrease exponentially
View Answer:
Answer: Option B
Solution:
381. The small value of direct current that flows when a semiconductor device has reverse
bias
A. surge current
B. bias current
C. reverse current
D. current limit
View Answer:
Answer: Option C
Solution:
382. Normally, diodes will not conduct when reverse-biased, but if the reverse voltage is
increased further, a point will be reached where the diode gives up and allowing the current
to surge. This voltage is one of the limiting parameter of diodes and is known as
A. breakdown voltage (VBR)
B. peak inverse voltage (PIV)
C. peak reverse voltage (PRV)
D. all are correct
View Answer:
Answer: Option D
Solution:
383. For a silicon diode, calculate the current at room temperature if the forward voltage VF =
0.3 V and the reverse saturation current IS = 100 nA.
A. 32.8 μA
B. 10.8 μA
C. 32.8 mA
D. 10.8 mA
View Answer:
Answer: Option A
Solution:
384. The breakdown voltage of a junction diode will ___________
A. Increase as operating temperature rises.
B. Increase exponentially as operating temperature rises.
C. Decrease as operating temperature rises.
D. Not change as operating temperature rises.
View Answer:
Answer: Option C
Solution:
385. Calculate the new threshold voltage of a germanium diode when it operates at 100°C.
A. 0.113 V
B. 0.188 V
C. 0.215 V
D. 0.513 V
View Answer:
Answer: Option A
Solution:
386. A silicon diode has a reverse saturation current of 50 nA at room temperature. If the
operating temperature is raised by 50°C, what is now the reverse saturation current?
A. 105.56 nA
B. 287.73 nA
C. 827.89 nA
D. 1.66 µA
View Answer:
Answer: Option D
Solution:
387. In every increase of 10°C in the operating temperature of a diode will cause its reverse
saturation current to
A. decrease
B. double
C. triple
D. quadruple
View Answer:
Answer: Option B
Solution:
388. What do you call the resistance of the diode when operating at a steady state voltage?
A. dc resistance
B. dynamic resistance
C. ac resistance
D. average resistance
View Answer:
Answer: Option A
389. The resistance of the diode that is significant when operating with a small ac signal
A. dc resistance
B. static resistance
C. dynamic resistance
View Answer:
Answer: Option C
Solution:
390. When a diode is used in large ac voltages, the resistance that is to be considered is
A. dc resistance
B. static resistance
C. dynamic resistance
View Answer:
Answer: Option D
Solution:
391. At forward bias condition, what will happen to the diode resistance when the applied
voltage is increased?
A. will also increase
B. will increase exponentially
C. will decrease
D. will not change
View Answer:
Answer: Option C
Solution:
392. The primary use of Zener diode in electronic circuits.
A. resistance regulator
B. rectifier
C. voltage regulator
D. current regulator
View Answer:
Answer: Option C
Solution:
393. What phenomenon in electronics does an avalanche breakdown primarily dependent?
A. Doping
B. Recombination
C. Ionization
D. Collision
View Answer:
Answer: Option C
Solution:
394. When a diode is reverse biased the depletion region widens, since it is in between
positively charge holes and negatively charge electrons, it will have an effect of a capacitor,
this capacitance is called what?
A. diffusion capacitance
B. storage capacitance
C. stray capacitance
D. transition capacitance
View Answer:
Answer: Option D
Solution:
395. In a semiconductor diode, the total capacitance, that is the capacitance between
terminals and electrodes, and the internal voltage variable capacitance of the junction is
called
A. diffusion capacitance
B. transition capacitance
C. depletion-region capacitance
D. diode capacitance
View Answer:
Answer: Option D
Solution:
396. What capacitance is significant when the diode is forward biased?
A. diffusion capacitance or storage capacitance
B. transition capacitance
C. depletion-region capacitance
D. stray capacitance
View Answer:
Answer: Option A
Solution:
397. A diode that is especially designed to operate as a voltage-variable capacitor. It utilizes

the junction capacitance of a semiconductor diode.
A. varactor
B. varicap
C. varistor
D. A and B are correct
View Answer:
Answer: Option D
Solution:
398. The capacitance of a varactor will _________ when the forward bias voltage is increased.
A. increase
B. decrease
C. exponentially decrease
D. not change
View Answer:
Answer: Option A
Solution:
399. The time taken by the diode to operate in the reverse condition from forward
conduction
A. reverse recovery time

B. forward recovery time
C. reverse holding time
D. reverse time constant
View Answer:
Answer: Option A
Solution:
400. In operating a diode at high-speed switching circuits, one of the most important
parameters to be considered is
A. ac resistance
B. diode capacitance
C. noise figure
D. reverse recovery time (trr)
View Answer:
Answer: Option D
401. The time required for forward voltage or current to reach a specified value after
switching the diode from its reverse-to-forward-biased state.
A. reverse recovery time
B. forward recovery time (tfr)
C. saturation time
D. conduction time
View Answer:
Answer: Option B
Solution:
402. The maximum power the diode can handle.
A. maximum derating power

B. maximum consumption power
C. breakdown power
D. maximum dissipation power
View Answer:
Answer: Option D
Solution:
403. What is the most important specification for semiconductor diode?
A. Forward resistance
B. Reverse resistance
C. Peak inverse voltage
D. Current capacity
View Answer:
Answer: Option D
Solution:
404. What will happen to the power handling capability of the diode if it is to be operated at
a higher temperature?
A. decreases
B. increases
C. increases exponentially
D. will not be affected
View Answer:
Answer: Option A
Solution:
405. Diode parameter that will inform the user as to what factor does the power handling
capability of the diode is reduced as the operating temperature is increased.
A. power derating factor
B. power dissipating factor
C. power reduction constant
D. all of the above
View Answer:
Answer: Option A
Solution:
406. A certain diode has a maximum power dissipation of 500 mW at room temperature and
a linear power derating factor of 5.0 mW/°C. How much power the diode can handle if
operated at 50°C.
A. 625 mW
B. 505 mW
C. 495 mW
D. 375 mW
View Answer:
Answer: Option D
Solution:
407. A semiconductor device especially fabricated to utilize the avalanche or zener

breakdown region. This is normally operated in the reverse-region and its application is
mostly for voltage reference or regulation.
A. varactor diode
B. zener diode
C. shockley diode
D. Schottky barrier diode
View Answer:
Answer: Option B
Solution:
408. Refers to a special type of diode which is capable of both amplification and oscillation.
A. Junction diode
B. Tunnel diode
C. Point contact diode
D. Zener diode
View Answer:
Answer: Option B
Solution:
409. The effect obtain when the electric field across a semiconductor is strong enough which
causes the free electrons to collide with valence electrons, thereby releasing more electrons
and a cumulative multiplication of charge carriers occur.
A. Gunn
B. avalanche
C. tunneling
D. diffusion
View Answer:
Answer: Option B
Solution:
410. A negative resistance diode commonly used in microwave oscillators and detectors, it is
sometimes used as amplifiers. This device is also known as Esaki diode.
A. varactor diode
B. Schottky diode
C. IMPATT diode
D. tunnel diode
View Answer:
Answer: Option D
Solution:
411. A rectifying metal-semiconductor junction
A. Schottky barrier diode
B. surface barrier diode
C. hot-carrier or hot-electron diode
D. all of the above are correct
View Answer:
Answer: Option D
Solution:
412. Diode whose negative resistance depends on a specific form of quantum-mechanical

bond structure of the material
A. Gunn diode
B. tunnel diode
C. TRAPATT diode
D. backward diode
View Answer:
Answer: Option A
Solution:
413. One of the electronic semiconductor devices known as diac, function as
A. Four terminal multi-directional switch
B. Two terminal bi-directional switch
C. Two terminal unidirectional switch

D. Three terminal bi-directional switch
View Answer:
Answer: Option C
Solution:
414. Another name of a three-layer diode. This is also considered as an ac diode.
A. Shockley diode
B. thyrector
C. thyristor
D. diac
View Answer:
Answer: Option D
Solution:
415. A diode whose negative resistance is dependent on the classical effects of phase shift
introduced by the time lag between maximum field and maximum avalanche current, and by
the transit time through the device.
A. Read diode
B. IMPATT diode
C. TRAPATT diode
D. all of the above
View Answer:
Answer: Option D
Solution:
416. What semiconductor diode that have a fine wire (called a cat-whisker) whose point is in
permanent contact with the surface of a wafer of semiconductor material such as silicon,
germanium or gallium arsenide?
A. point-contact diode
B. diac
C. PiN diode
D. thyrector
View Answer:
Answer: Option A
Solution:
417. When the p-n junction of a semiconductor diode is inserted with an intrinsic material,
the diode becomes a
A. backward diode
B. Read diode
C. Schokley diode
D. PiN diode
View Answer:
Answer: Option D
Solution:
418. A four layer semiconductor diode whose characteristic at the first quadrant is similar to
that of a silicon-controlled rectifier (SCR).
A. Shockley diode
B. thyrector
C. Schottky diode
D. diac
View Answer:
Answer: Option A
Solution:
419. A diode that is especially processed so that its high-current flow takes place when the
junction is reverse-biased. It is a variation of a tunnel diode.
A. Esaki diode
B. Read diode
C. zener diode
D. backward diode
View Answer:
Answer: Option D
Solution:
420. A silicon diode that exhibits a very high resistance in both directions up to certain
voltage, beyond which the unit switches to a low-resistance conducting state. It can be
viewed as two zener diodes connected back-to-back in series.
A. bizener diode
B. diac
C. thyristor
D. thyrector
View Answer:
Answer: Option D
Solution:
421. A type of Read diode that uses a heavily doped n-type material as its drift region
A. IMPATT diode
B. TRAPATT diode
C. TUNNETT diode
D. MITATT
View Answer:
Answer: Option A
Solution:
422. A device containing more than one diode. An example is the full-wave bridge-rectifier
integrated circuit.
A. diode array
B. diode IC
C. diode pack
D. combined diode
View Answer:
Answer: Option C
Solution:
423. Is the combination of the inductance of the leads and electrodes, capacitance of the
junction, and the resistance of the junction of a semiconductor diode.
A. diode impedance
B. diode ac resistance
C. diode reactance
D. diode ac parameter
View Answer:
Answer: Option A
Solution:
424. In a reverse-biased pn junction, the sudden large increase in current that occurs when a
particular value of reversed voltage is reached, and which is due to ionization by the high
intensity electric field in the depletion region.
A. Zener effect
B. Hall effect
C. breakdown voltage
D. ionization
View Answer:
Answer: Option A
Solution:
425. The appearance of RF current oscillations in a dc-biased slab of n-type gallium arsenide
in a 3.3 kV electric field
A. Gunn effect
B. Hall effect
C. Zener effect
D. avalanche
View Answer:
Answer: Option A
Solution:
426. The impedance presented by a junction operating in its zener breakdown region.
A. diode impedance
B. zener impedance
C. breakdown impedance
D. critical impedance
View Answer:
Answer: Option B
427. A curve showing the relationship between the voltage and the current of the diode at
any given temperature
A. characteristic curve
B. transfer curve
C. transfer characteristic curve

D. all are correct
View Answer:
Answer: Option A
Solution:
428. The line that is plotted in the diode characteristic curve which represents the load
A. linear line
B. operating line
C. load line
D. transfer load line
View Answer:
Answer: Option C
Solution:
429. Diode is said to be operating at a point where the characteristic curve and the load line
intersect. This point is technically termed as
A. Q-point
B. operating point
C. quiescent point
D. all are correct
View Answer:
Answer: Option D
Solution:
430. What will happen to the magnitude of the load-line slope when the load resistance is
decreased?
A. it will also decrease
B. it will increase
C. it will increase exponentially
D. is not affected by the load
View Answer:
Answer: Option B
Solution:
431. Quiescent or Q-point position is dependent on
A. the supply voltage
B. the load resistance
C. the type of diode
D. all of the above
View Answer:
Answer: Option D
Solution:
432. A germanium diode is connected to a load resistance of 1.5 kΩ and is supplied with 12-V
such that the diode will be forward biased. What is the voltage across the diode?
A. approximately 12 V
B. approximately 0.7 V
C. approximately 0.3 V
D. lack of data and can’t be solved
View Answer:
Answer: Option C
Solution:
433. What is the drop across the diode when it is connected in series to a resistor of 1.8 kΩ
and a supply voltage of 50 V. The supply voltage causes the diode to be reverse-biased.
A. 50 V
B. 0.7 V
C. 0.3 V
D. can not be solve, lack of data
View Answer:
Answer: Option A
Solution:
434. Two germanium diodes are connected in series and have a load resistance of 10 kΩ and a
forward supply voltage of 5 V. Calculate the voltage across the load resistor.
A. 4.7 V
B. 4.4 V
C. 0.6 V
D. 0.3 V
View Answer:
Answer: Option B
Solution:
435. A silicon diode is in parallel with a germanium diode and is connected to a load resistor
having a value of 20 kΩ and a forward supply voltage of 10 V. What is the approximate
voltage across the silicon diode?
A. 10 V
B. 1.0 V
C. 0.7 V
D. 0.3 V
View Answer:
Answer: Option D
Solution:
436. What is the output voltage across a load resistor if it is paralleled with a forward biased
silicon diode? The resistor network is supplied with 10 V.
A. 0.7 V
B. 9.3 V
C. 10 V
D. Can’t be solve, lack of data.
View Answer:
Answer: Option A
Solution:
437. Diode circuit that is used to cut a portion of the input signal
A. clipper
B. clamper
C. peak detector
D. level shifter
View Answer:
Answer: Option A
Solution:
438. A clipper circuit wherein the diode is connected in series with the load
A. series clipper
B. parallel clipper
C. shunt clipper
D. series feed clipper
View Answer:
Answer: Option A
Solution:
439. What do you call a clipper circuit wherein the diode is shunted with the load?
A. series clipper
B. parallel clipper
C. cascade clipper
D. cascade clipper
View Answer:
Answer: Option B
Solution:
440. A network with a diode and a capacitor that is used to shift the dc-level of the input
signal
A. clipper
B. clamper
C. shifter
D. level inverter
View Answer:
Answer: Option B
Solution:
441. Half-wave rectifier is a good example of
A. a series clamper
B. a parallel clamper
C. a parallel clipper
D. a series clipper
View Answer:
Answer: Option D
Solution:
442. Which of the given circuit below must have a capacitor?
A. rectifier
B. clipper
C. clamper
D. all of the above
View Answer:
Answer: Option C
Solution:
443. How many capacitors are used in a diode-capacitor half- wave voltage doubler?
A. 1
B. 2
C. 3
D. 4
View Answer:
Answer: Option B
Solution:
444. An improvement of a diode-capacitor half-wave voltage doubler is the full-wave

doubler, this circuit uses how many capacitors?
A. 1
B. 2
C. 3
D. 4
View Answer:
Answer: Option B
Solution:
445. In a diode-capacitor voltage quadrupler, what is the voltage across the third stage
capacitor?
A. Vmax
B. 2 Vmax
C. 3 Vmax
D. 4 Vmax
View Answer:
Answer: Option B
Solution:
446. A combination of several diodes in a single housing
A. diode array
B. diode network
C. diode IC
D. diode matrix
View Answer:
Answer: Option A
Solution:
447. A chopper, employing an alternately biased diodes as the switching element.
A. diode chopper
B. active chopper
C. junction chopper
D. all are correct
View Answer:
Answer: Option A
Solution:
448. A light emitting diode (LED) is to be used in a circuit with a supply voltage of 5 V. What
should be the value of the resistor needed by the LED to operate normally?
A. 25 Ω
B. 250 Ω
C. 25 kΩ
D. 250 kΩ
View Answer:
Answer: Option B
Solution:
449. A simple voltage-regulator whose output is the constant voltage drop developed across
a zener diode conducting in the reverse breakdown region. The regulator circuit consists of a
zener diode in parallel with the load and an appropriate limiting resistor.
A. ordinary voltage regulator
B. zener voltage regulator
C. series voltage regulator
D. switching voltage regulator
View Answer:
Answer: Option B
450. Logic circuitry in which a diode is the logic element and a transistor acts as an inverting
amplifier.
A. RTL
B. DTL
C. HDTL
D. ECL
View Answer:
Answer: Option B
451. What is a bridge rectifier having diodes in two arms and resistors in the other two?
A. full-wave bridge
B. half-wave bridge
C. half-bridge
D. full bridge
View Answer:
Answer: Option C
Solution:
452. An over-voltage protection circuit employing a zener diode and an SCR whose function is
to produce high overload by-pass current on a circuit.
A. regulator
B. current enhancer
C. crowbar
D. shunted zener
View Answer:
Answer: Option C
Solution:
453. The flow of electron in a NPN transistor when used in electronic circuit is from _______.
A. collector to base
B. collector to base
C. emitter to collector
D. base to emitter
View Answer:
Answer: Option C
Solution:
454. A three terminal, three layer semiconductor device that has the ability to multiply
charge carriers. This device was first introduced at Bell Laboratories, by Brattain and Bardeen
in 1947 and which opens a completely new direction of interest and development in the field
of electronics.
A. triode
B. triac
C. SCR
D. transistor
View Answer:
Answer: Option D
Solution:
455. An active semiconductor device, capable of amplification, oscillation, and switching

action. It is an acronym for transfer resistor and had replaced the tube in most applications.
A. thyristor
B. thyrector
C. SBS
D. transistor
View Answer:
Answer: Option D
Solution:
456. Transistor replaces the old vacuum tubes because it has several obvious advantages,
what are they?
A. smaller, lightweight and rugged construction
B. no heater loss, low operating voltage and therefore efficient
C. low power consumption and low power dissipation
D. all of these
View Answer:
Answer: Option D
Solution:
457. Which of the three regions/areas in a transistor that is the smallest in construction?
A. emitter
B. collector
C. base
D. all are equal
View Answer:
Answer: Option C
Solution:
458. The region or area in a transistor that is heavily doped
A. at the junction
B. emitter
C. collector
D. base
View Answer:
Answer: Option B
Solution:
459. A transistor in which the base is diffused and the emitter is alloyed. The collector is
provided by the semiconductor substrate into which alloying and diffusion are affected.
A. alloy-transistor
B. alloy-diffused transistor
C. alloy junction transistor
D. diffused junction transistor
View Answer:
Answer: Option B
Solution:
460. A transistor whose junctions are created by alloying
A. alloy transistor
B. alloy-diffused transistor
C. diffused transistor
D. alloy junction
View Answer:
Answer: Option A
461. In a semiconductor device, a p-n junction formed by alloying a suitable material such as
indium with the semiconductor.
A. alloy junction
B. diffused junction
C. depletion junction
D. storage junction
View Answer:
Answer: Option A
Solution:
462. A transistor in which one or both electrodes are created by diffusion
A. diffused transistor
B. alloy transistor
C. planar transistor
D. mesa transistor
View Answer:
Answer: Option A
Solution:
463. A two-junction transistor whose construction takes the form of a pnp or a npn. Such
device uses both electron and hole conduction and is current-driven.
A. bipolar transistor
B. unipolar transistor
C. bi-directional transistor
D. double junction transistor
View Answer:
Answer: Option A
Solution:
464. The predecessor of the junction transistor, and is characterized by a current

amplification factor, alpha of greater than one.
A. surface-charge transistor
B. surface-barrier transistor
C. schottky transistor
D. point-contact transistor
View Answer:
Answer: Option D
Solution:
465. For a transistor, the outer layers are
A. lightly doped semiconductors
B. heavily doped semiconductors
C. no doping at all
D. A and B above
View Answer:
Answer: Option B
Solution:
466. The ratio of the total width of the outer layers to that of the center layer
A. 100:1
B. 150:5
C. 150:1
D. 1:150
View Answer:
Answer: Option C
Solution:
467. The ratio of the doping level of the outer layers to that of the sandwiched material
A. 10:3 or more
B. 10:2 or more
C. 10:3
D. 10:1 or less
View Answer:
Answer: Option D
Solution:
468. Limiting the number of “free” carriers will
A. increase the conductivity but decreases the resistance
B. decrease the conductivity but increases the resistance
C. increase the conductivity as well as resistivity
D. decrease the conductivity as well as resistivity
View Answer:
Answer: Option B
Solution:
469. The term __________ reflects the fact that holes and electrons participate in the
injection process into the oppositely polarized material.
A. unipolar
B. bipolar
C. tetrode
D. pentode
View Answer:
Answer: Option B
Solution:
470. What device, that employs only electron or hole?
A. unipolar
B. bipolar
C. tetrode
D. pentode
View Answer:
Answer: Option A
Solution:
471. At forward-biased junction of pnp transistor, majority carriers flow heavily
A. from p- to the n-type material
B. from n- to the p-type material
C. from p- to p-type material
D. A and B above
View Answer:
Answer: Option A
Solution:
472. The minority-current component of a transistor is called
A. leakage current
B. emitter current
C. cut-off current
D. all of the above
View Answer:
Answer: Option A
Solution:
473. For general-purpose transistors, IC is measured in _________, while I CO is measured in

________.
A. micro and nanoamperes
B. milliamperes and microamperes
C. milliamperes and nanoamperes

D. b and c above
View Answer:
Answer: Option D
Solution:
474. Is temperature sensitive, and can severely affect the stability of the system, when not
carefully examined during design
A. IC
B. ICO
C. IS
D. IE
View Answer:
Answer: Option B
Solution:
475. For the transistor, the arrow in the graphic symbol defines the direction of
____________ through the device
A. leakage current flow
B. emitter electron flow
C. majority carrier flow
D. emitter conventional current flow
View Answer:
Answer: Option D
Solution:
476. In the dc mode, the levels of IC and IE due to the majority carriers are related by the
quantity
A. alpha (α)
B. beta (β)
C. gamma (γ)
D. A and B above
View Answer:
Answer: Option A
Solution:
477. In the ac mode, alpha α is formally called
A. common-base, short-circuit, amplification factor
B. common-emitter, amplification factor
C. common-collector, amplification factor
D. all of the above are correct
View Answer:
Answer: Option A
Solution:
478. Phrases “not pointing in” and “pointing in” simply mean
A. npn and pnp
B. pnp and npn
C. npn only
D. pnp only
View Answer:
Answer: Option A
479. In the dc mode, the levels of IC and IB are related by a quantity called
A. α
B. β
C. γ
D. A and B above
View Answer:
Answer: Option B
Solution:
480. For practical transistor devices, the level of β typically ranges
A. from about 25 to over 400
B. less than 1
C. mostly in midrange of 50 to 400
D. A or C above
View Answer:
Answer: Option C
Solution:
481. The formal name of βac
A. Common-collector reverse-current amplification factor
B. Common-collector forward-current amplification factor
C. Common-emitter forward-current amplification factor
D. Common-emitter reverse-current amplification factor
View Answer:
Answer: Option C
Solution:
482. It is a particularly important parameter that provides a direct link between current levels
of the input and output circuits for a common-emitter configuration.
A. α
B. β
C. A and B above
D. none of these
View Answer:
Answer: Option B
Solution:
483. The __________ id defined as that area below I C = ICEO.
A. active region
B. cutoff region
C. saturation region
D. none of the above
View Answer:
Answer: Option B
Solution:
484. It is referred to as the communication link between the manufacturer and user
A. specification sheet
B. characteristic manual
C. characteristic curve
D. all of the above
View Answer:
Answer: Option D
Solution:
485. The information that can be found in most specification sheets?
A. maximum ratings
B. thermal characteristics
C. electrical characteristics
D. all of the above
View Answer:
Answer: Option D
Solution:
486. With an ohmmeter, a large or small resistance in either junction of an npn or pnp
transistor indicates
A. faulty device
B. well functioning device
C. leaky device
D. either A or C
View Answer:
Answer: Option A
Solution:
487. At base-emitter junction, using an ohmmeter, if the positive (+) lead is connected to the
base and the negative (-) lead to the emitter, a low resistance reading would indicate
A. npn transistor
B. pnp transistor
C. germanium transistor
D. silicon transistor
View Answer:
Answer: Option A
Solution:
488. At base-emitter junction, if the positive (+) lead is connected to the base and the
negative (-) lead to the emitter, a high resistance reading would indicate
A. npn transistor
B. pnp transistor
C. germanium transistor
D. silicon transistor
View Answer:
Answer: Option B
Solution:
489. Transistors of heavy duty construction
A. high-power devices
B. low-power devices
C. medium-power devices
D. all of the above
View Answer:
Answer: Option A
Solution:
490. On a voltage-current condition curve, the point belong to which a further increase in
voltage produces no (or very little) further increase in current.
A. saturation flux
B. saturation value
C. saturation point
D. all of the above
View Answer:
Answer: Option C
Solution:
491. It is applied to any system where levels have reached their maximum values
A. saturation
B. active
C. cutoff
D. quiescent point
View Answer:
Answer: Option A
Solution:
492. For an “on” transistor, the voltage VBE should be in the neighborhood of
A. 0.3 V
B. 0.55 V
C. 0.7 V
D. 1.7 V
View Answer:
Answer: Option C
Solution:
493. Among the three characteristics of a transistor amplifier, which region is normally
employed for linear (undistorted) amplifiers?
A. active region
B. cutoff region
D. capital region
View Answer:
Answer: Option A
Solution:
494. In the active region, the collector-base junction is ________, while the base-emitter
junction is ________.
A. forward and forward-biased
B. forward and reverse-biased
C. reverse and reverse biased
D. reverse and forward-biased
View Answer:
Answer: Option D
Solution:
495. It is necessary, in order to establish the proper region of operation for ac amplification.
A. ac biasing
B. dc biasing
C. A and B above
View Answer:
Answer: Option B
Solution:
496. At cutoff region, the collector-base and base-emitter junctions of a transistor are
A. both reverse-biased
C. both forward-biased

View Answer:
Answer: Option A
Solution:
497. In saturation region, the collector-base and base-emitter junctions of a transistor are
A. both reverse-biased
C. both forward-biased
View Answer:
Answer: Option C
Solution:
498. If the base-emitter junction is reverse biased and the base-collector junction is forward
biased, the transistor will be at what region of operation?
A. active region
B. cut-off region
D. breakdown region
View Answer:
Answer: Option B
Solution:
499. Under what region does the transistor operate if both the base-emitter and base-
collector junctions are reverse-biased?
A. active region
B. cut-off region
D. breakdown region
View Answer:
Answer: Option B
Solution:
500. What region the transistor should be operating to have minimum distortion at the
output signal?
A. active region
B. cut-off region
View Answer:
Answer: Option A

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Choose the letter of the best answer in each questions.

2. The maximum permissible number of electrons in the third orbit is

3. Varactor diodes are commonly used

A. As voltage controlled capacitance

B. As a constant current source

D. As a constant voltage source

C. Because they are not being attracted by the positive nucleus.

C. In the same velocity

D. A little bit slower

6. A transistor configuration with the lowest current gain.

8. Valence orbit is the other form for

C. Piecewise linear model

A. Covalent bond and recombination

B. Diffusion and drift

C. Free and charge particles

D. Forward and reverse bias

13. A semiconductor is an element with a valence of

14. What orbit controls the electrical property of the atom?

A. Thrice the peak

B. Twice the peak

18. Diffusion or storage capacitance is the term used to refer to

A. The reverse bias capacitance of a diode

B. The forward bias capacitance of a diode

C. The breakdown capacitance of a zener diode

D. The effective capacitance of the rectifier

19. What is considered as the key electrical conductivity?

A. The number of electrons in the valence orbit

B. The number of protons in the nucleus

C. The number of neutrons in the nucleus

D. The number of protons plus the number of electrons in the atom

22. A silicon crystal is an intrinsic semiconductor

A. If every atom in the crystal is a silicon atom

B. If majority of the atoms in crystal is a silicon atom

C. If the crystal contains 14 silicon atoms

D. If the crystal is undoped

23. At room temperature, a silicon crystal acts approximately like a/an

24. An extrinsic semiconductor is a

29. What is another name for a pn crystal

30. An acceptor atom is also called

31. Which is a donor atom?

32. In an n-type semiconductor, free electrons are called

33. in an n-type semiconductor, holes are called

34. What is the barrier potential of germanium at 25˚C

35. The barrier potential for a silicon diode at 25˚C is approximately

37. When temperature increases, barrier potential _________.

A. Remains the same

D. Either increases or decreases depending on the semiconductor material used

38. Avalanche effects occurs at

A. Higher reverse voltages

B. Lower reverse voltages

C. Higher forward voltages

D. Lower forward voltages

40. Zener effect only depends on the

A. High-speed minority carriers

B. High-speed majority carriers

C. Intensity of the electric field

D. Intensity of the magnetic field

42. What is the input control parameter of a FET?

A. Reverse saturation current

D. Forward breakdown current

A. Reverse recovery time

B. Maximum junction voltage