MITSUBISHI FAST RECOVERY DIODE MODULES

RM50HG-12S
HIGH SPEED SWITCHING USE
NON-INSULATED TYPE

RM50HG-12S

• IDC DC current .................................. 50A

• VRRM Repetitive peak reverse voltage
................ 600V
• trr Reverse recovery time ............. 0.2µs
• ONE ARM
• Non-Insulated Type

APPLICATION
For snubber circuit (IPM or IGBT module)

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

20.5MAX. φ3.2±0.2 5±0.3

6±0.2

Non-Isolation side (metal) 4

26±0.5
2.5

1 2
3 4
2.5±0.3
20MIN.

1 2 3

1±0.2 2±0.3
0.6±0.2
5.45±0.5 5.45±0.5
3±0.3

Sep.2001
 MITSUBISHI FAST RECOVERY DIODE MODULES

RM50HG-12S
HIGH SPEED SWITCHING USE
NON-INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS (Tj=25°C)

Voltage class
Symbol Parameter Unit
12
VRRM Repetitive peak reverse voltage 600 V
VR (DC) Reverse DC voltage 480 V

Symbol Parameter Conditions Ratings Unit

IDC DC current Resistive load, TC=80°C ➀, ➂ Collective of terminal 50 A
IFSM Surge (non-repetitive) forward current One half cycle at 60Hz, peak value ➀, ➂ Collective of terminal 1000 A
I2t I2t for fusing Value for one cycle surge current — A2s
Tj Junction temperature –40~+150 °C
Tstg Storage temperature –40~+125 °C
Viso Isolation voltage Charged part to case — V
0.59~0.98 N·m
— Mounting torque Mounting screw M3
6~10 kg·cm
— Weight Typical value 5 g

ELECTRICAL CHARACTERISTICS
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
IRRM Repetitive reverse current Tj=25/125°C, VRRM applied — — 0.1/1.0 mA
VFM Forward voltage Tj=25°C, IFM=200A, Instantaneous meas. — — 4.0 V
trr Reverse recovery time — — 0.2 µs
IFM=200A, Tj=25°C, di/dt=–1000A/µs, VR=300V
Qrr Reverse recovery charge — — — µC
Rth (j-c) Thermal resistance Junction to case — — 0.5 °C/ W
Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied — — 0.5 °C/ W

Sep.2001
 MITSUBISHI FAST RECOVERY DIODE MODULES

RM50HG-12S
HIGH SPEED SWITCHING USE
NON-INSULATED TYPE

PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC MAXIMUM TRANSIENT THERMAL IMPEDANCE
(JUNCTION TO CASE)
10 0 2 3 5 7 10 1 2
10 3 0.5
7
Tj=25°C
5
FORWARD CURRENT (A)

0.4
3
2

Zth (j-c) (°C/W)

0.3
10 2
7 0.2
5

3
0.1
2

10 1 0
1.0 2.0 3.0 4.0 5.0 6.0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0
FORWARD VOLTAGE (V) TIME (s)

RATED SURGE (NON-REPETITIVE)

FORWARD CURRENT
1000
SURGE (NON-REPETITIVE)

800
FORWARD CURRENT (A)

600

400

200

0
1 2 3 5 7 10 20 30 50 70100

CONDUCTION TIME
(CYCLES AT 60Hz)

Sep.2001