Sunteți pe pagina 1din 4

FFAF10U20DN

FFAF10U20DN

Features
• Ultrafast with soft recovery
• Low forward voltage

Applications
• Power switching circuits TO-220F
• Output rectifiers TO-3PF
1 2 3
• Freewheeling diodes
• Switching mode power supply 1. Anode 2.Cathode 3. Anode

ULTRA FAST RECOVERY POWER RECTIFIER


Absolute Maximum Ratings (per diode) TC=25°°C unless otherwise noted
Symbol Parameter Value Units
VRRM Peak Repetitive Reverse Voltage 200 V
IF(AV) Average Rectified Forward Current @ TC = 100°C 10 A
IFSM Non-repetitive Peak Surge Current 100 A
60Hz Single Half-Sine Wave
TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 °C

Thermal Characteristics
Symbol Parameter Value Units
RθJC Maximum Thermal Resistance, Junction to Case 4.0 °C/W

Electrical Characteristics (per diode) TC=25 °C unless otherwise noted


Symbol Parameter Min. Typ. Max. Units
VFM * Maximum Instantaneous Forward Voltage V
IF = 10A TC = 25 °C - - 1.2
IF = 10A TC = 100 °C - - 1.0
IRM * Maximum Instantaneous Reverse Current µA
@ rated VR TC = 25 °C - - 10
TC = 100 °C - - 100
trr Maximum Reverse Recovery Time - - 35 ns
Irr Maximum Reverse Recovery Current - - 2.5 A
Qrr Maximum Reverse Recovery Charge - - 45 nC
(IF =10A, di/dt = 200A/µs)
WAVL Avalanche Energy 0.5 - - mJ
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%

©2001 Fairchild Semiconductor Corporation Rev. A, December 2001


FFAF10U20DN
Typical Characteristics

50 1000

100
o

[µA]
TC = 100 C
Forward Current , IF [A]

o
10 TC = 100 C

R
10

Reverse Current , I
o
TC = 25 C
1
o
TC = 25 C
1
0.1

0.01

0.1 0.001
0.0 0.5 1.0 1.5 2.0 0 50 100 150 200

Forward Voltage , VF [V] Reverse Voltage , VR [V]

Figure 1. Typical Forward Voltage Drop Figure 2. Typical Reverse Current


vs. Forward Current vs. Reverse Voltage

400 40
Typical Capacitance IF = 10A
at 0V = 286 pF o
Reverse Recovery Time , trr [ns]

Tc = 25 C

300 35
Capacitance , Cj [pF]

30
200

25
100

20
0.1 1 10 100 100 500

Reverse Voltage , VR [V] di/dt [A/µs]

Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time


vs. di/dt

6 16
[A]

IF = 10A
F(AV)

14
Reverse Recovery Current , rrI [A]

o
5 TC = 25 C
Average Forward Current , I

12

4
10
DC

3 8

6
2
4

1
2

0 0
100 500 60 80 100 120 140 160

di/dt [A/µ s] Case Temperature , TC [ C]


o

Figure 5. Typical Reverse Recovery Current Figure 6. Forward Current Derating Curve
vs. di/dt

©2001 Fairchild Semiconductor Corporation Rev. A, December 2001


FFAF10U20DN
Package Dimensions

TO-3PF

5.50 ±0.20

3.00 ±0.20
4.50 ±0.20
15.50 ±0.20 ø3.60 ±0.20
(1.50)

10.00 ±0.20

°
10

23.00 ±0.20
26.50 ±0.20

22.00 ±0.20
0.85 ±0.03
14.50 ±0.20
16.50 ±0.20

16.50 ±0.20

1.50 ±0.20
2.00 ±0.20

2.50 ±0.20

2.00 ±0.20
2.00 ±0.20 2.00 ±0.20 2.00 ±0.20
14.80 ±0.20

4.00 ±0.20

+0.20
3.30 ±0.20
0.75 –0.10

5.45TYP 5.45TYP +0.20


[5.45 ±0.30] [5.45 ±0.30] 0.90 –0.10
5.50 ±0.20
3.30 ±0.20

2.00 ±0.20

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation Rev. A, December 2001


TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FAST® OPTOLOGIC™ SMART START™ VCX™
Bottomless™ FASTr™ OPTOPLANAR™ STAR*POWER™
CoolFET™ FRFET™ PACMAN™ Stealth™
CROSSVOLT™ GlobalOptoisolator™ POP™ SuperSOT™-3
DenseTrench™ GTO™ Power247™ SuperSOT™-6
DOME™ HiSeC™ PowerTrench® SuperSOT™-8
EcoSPARK™ ISOPLANAR™ QFET™ SyncFET™
E2CMOS™ LittleFET™ QS™ TruTranslation™
EnSigna™ MicroFET™ QT Optoelectronics™ TinyLogic™
FACT™ MicroPak™ Quiet Series™ UHC™
FACT Quiet Series™ MICROWIRE™ SLIENT SWITCHER® UltraFET®
STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS


Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2001 Fairchild Semiconductor Corporation Rev. H4

S-ar putea să vă placă și