5/28/2019 Polishing behaviors of ceria abrasives on silicon dioxide and silicon nitride CMP - ScienceDirect

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Powder Technology
Volume 206, Issue 3, 30 January 2011, Pages 239-245

Polishing behaviors of ceria abrasives on silicon dioxide and silicon

nitride CMP
Myoung-Hwan Oh a , Jun-Seok Nho b, Seung-Beom Cho b, Jae-Seok Lee a, Rajiv K. Singh a

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https://doi.org/10.1016/j.powtec.2010.09.025 Get rights and content

Abstract
The effects of ceria (CeO2) abrasives in chemical mechanical polishing (CMP) slurries were investigated on
silicon dioxide (SiO2) and silicon nitride (Si3N4) polishing process. The ceria abrasives were prepared by the
flux method, using potassium hydroxide (KOH) as the grain growth accelerator. The primary particle size of
the ceria abrasives was controlled in the range of ~ 84–417 nm by changing the concentration of potassium
hydroxide and the calcination temperature without mechanical milling process. The removal rate of silicon
dioxide film strongly depended upon abrasive size up to an optimum abrasive size (295 nm) after CMP process.
However, the surface uniformity deteriorated as abrasive size increases. The observed polishing results
confirmed that there exists an optimum abrasive size (295 nm) for maximum removal selectivity between oxide
and nitride films. In this study, polishing behaviors of the ceria abrasives were discussed in terms of
morphological characteristics.

Graphical Abstract
The ceria particles were prepared by the flux method, using potassium hydroxide (KOH) as the grain growth
accelerator to promote interdiffusion on contact surface between the smaller particles and the larger ones. The
resultant particles were used as abrasive for ceria-based slurry in CMP process. This study investigated
polishing behaviors of the ceria particles in terms of morphological characteristics.

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Keywords
Ceria; Chemical mechanical polishing (CMP); Grain growth accelerator; Flux method; Sintering
process

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Copyright © 2010 Elsevier B.V. Published by Elsevier B.V. All rights reserved.

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