Unit I-PN Junction PDF

BASIC CIRCUITS AND DIODES
Review of
Semiconductor Barrier Potential PN Junction
material Intrinsic, Doping Piecewise linear model
Intrinsic, Doping
PN Junction Junction
Biasing Capacitance
Forward & Reverse Bias Structure
The behavior of solid state devices
Depends on
 atomic theory,
 quantum mechanics, and
 electron models.
Plum pudding model
 Proposed by J.J Thomson
 Discovered the “electron”.

raisins(electrons)
‘+’vely charged
"pudding”
Rutherford model
 Proposed by Ernest Rutherford.

 Gold-foil experiment
 Invented the nucleus
 mass of the atom ≈ mass of the small nucleus.

Black Body Radiation
 Observation by Planck, the radiation from a
heated sample is emitted in discrete units of
energy, called quanta;
The Photoelectric Effect
 Einstein interpreted an important experiment that

clearly demonstrated Electrons are ejected from the
surface of a metal when exposed to light of frequency
ν in a vacuum
Atomic Spectra
 In 1885, Balmer observed hydrogen spectrum and saw
colored lines
Niels Bohr’s Model (1913)
 Electrons exist in certain stable, circular orbits about
the nucleus.
 The orbiting electron does not give off radiation
Niels Bohr’s Model(conti)
E4 hv = E4-E1
E3
E2
E1
E!
Angular momentum of the

electron
Wave Model
 Today’s atomic model the wave mechanics.
According to This, Atoms do not have planetary structure .
 In fact, the probable location of an electron is based on
how much energy the electron has.
 According to the modern atomic model, the atom has a
small nucleus(‘+’ ve) surrounded by a large region in
which there are enough electrons to make an atom
neutral.
Atomic Structure
 All Elements are made of atoms
 each has an atomic structure
 Atoms are made of nucleus (Protons (+) & Neutrons)

and electrons (-).
 electrons moves in orbits (discrete distances)
 The closer the orbit to the nucleus the less energy it
has
 Group of orbits called shell.
 Valence shell is the outmost shell.
Atomic Structure(conti….)
 Atomic Number(z) = no. of protons in the nucleus.
 Atomic Mass (A) = z + no of Neutrons(N)in the nucleus.
 The number of Protons = Number of Electrons.
Electron configuration of atoms
 Aufbau principle:- orbital's of lowest energy are filled
first.
 Hund's rule:- orbital's of the same energy are
available, one in each before they double up.
 Pauli exclusion principle:- No two electron can posses
the same 4 quantum states.
No of shell & Valence electron
 EX:- silicon = Si (Z=14)

1s2
2s2 2p6
3s2 3p6 3d10 1s2 2s2 2p6 3s2 3p6
4s2 4p6 4d10 4f14
5s2 5p6 5d10 5f14
6s2 6p6 6d10
7s2 7p6 Total shell =3
Total valence electron = 4
Find no of shell & no of valence electron for potassium(19K39.1)?
Number of shells = 4
Valence electrons = 1
IONS
 IONS are atoms or groups of atoms with a positive or negative
charge.
 Taking away an electron from an atom gives a CATION with a
positive charge
 Adding an electron to an atom gives an ANION with a
negative charge.
 Examples: Na+ Ca+2 I- O-2 (IONS)
Na Ca I O (atoms)
TECHNICAL TALK - PN JUNCTION
Energy Bands
Conduction band
Empty band
Electron energy
Bandgap forbidden gap
Outermost band
containing elelectrons Valence band
Partially full
Bandgap
Full
Bandgap
Full
nucleus
17
Elements
18
Bonding Forces Between Atoms
• Nature of the material is a conductor, semiconductor
or insulator depends largely upon what happens to the
outer-shell electrons when the atoms bond themselves
together to form a solid.
• The three types of bonds are
– Metallic bonding (minor Bonding)
– Covalent bonding
– Ionic bonding
Chemical Bonds
• Chemically combining of two or more atoms
– Covalent Bonds
– Ionic Bonds
Covalent Bonds
• One or more pairs of electrons

are shared by two atoms
Ionic Bonds
• One or more electrons from 1

atom are removed and attached to
another atom, resulting in +ve
(cation) and –ve (anion) ions which
attract each other
Covalent Ionic
Compounds Compounds
Gases, liquids, or solids – Crystalline solids

Low melting and boiling points
Poor electrical conductors – High melting and boiling
Many soluble in nonpolar liquids but not points
in water – Conduct electricity
when melted
– Many soluble in water
but not in nonpolar
liquid
One minor type of bonding
• Metallic bonding
– Occurs between like atoms of a metal in the free state
– Valence e- are mobile (move freely among all metal atoms)
– Positive ions in a sea of electrons
• Metallic characteristics
– High mp temps, ductile, malleable, shiny
– Hard substances
– Good conductors of heat and electricity as (s) and (l)
Insulators
Insulators have tightly bound electrons in their outer shell

These electrons require a very large amount of energy to free them for conduction
Let’s apply a potential difference across the insulator above…
The force on each electron is not enough to free it from its orbit and the insulator does
not conduct
Insulators are said to have a high resistivity / resistance
28
Conductors
Conductors have loosely bound electrons in their outer shell

These electrons require a small amount of energy to free them for conduction
Let’s apply a potential difference across the conductor above…
The force on each electron is enough to free it from its orbit and it can jump from
atom to atom – the conductor conducts
Conductors are said to have a low resistivity / resistance
29
Semiconductors
Semiconductors have a resistivity/resistance between that of conductors and
insulators
Their electrons are not free to move but a little energy will free them for
conduction
The two most common semiconductors are silicon and germanium
30
Semiconductor
31
Conduction electrons and Holes
Energy
Free electron
Conduction band
Energy gap Heat

Energy
Valence band
Holes
32
The Silicon, Si, Atom
Silicon has a valency of 4 i.e. 4 This picture shows the
electrons in its outer shell shared electrons
Each silicon atom shares its 4
outer electrons with 4
neighbouring atoms
These shared electrons –
bonds – are shown as
horizontal and vertical lines
between the atoms
33
Silicon – the crystal lattice
If we extend this
arrangement throughout a
piece of silicon…
We have the crystal lattice

of silicon
This is how silicon looks

when it is cold
It has no free electrons – it cannot conduct electricity – therefore it behaves like an

insulator
34
Electron Movement in Silicon
However, if we apply a little

heat to the silicon….
An electron may gain

enough energy to break free
of its bond…
It is then available for
conduction and is free to
travel throughout the
material
35
Hole Movement in Silicon
Let’s take a closer look at

what the electron has left
behind
There is a gap in the bond –

what we call a hole
Let’s give it a little more

character…
36
Hole Movement in Silicon
This hole can also move…
An electron – in a nearby
bond – may jump into this
hole…
Effectively causing the hole
to move…
Like this…
37
Heating Silicon
We have seen that, in

silicon, heat releases
electrons from their
bonds…
This creates electron-hole

pairs which are then
available for conduction
38
Intrinsic Conduction
Take a piece of silicon…
And apply a potential

difference across it…
This sets up an electric field

throughout the silicon –
seen here as dashed lines
When heat is applied an electron is released

and…
39
The electron feels a force

and moves in the electric
field
It is attracted to the positive

electrode and re-emitted by
the negative electrode
40
Now, let’s apply some more

heat…
Another electron breaks
free…
And moves in the electric
field.
We now have a greater
current than before…
And the silicon has less
resistance…
41
If more heat is applies the
process continues…
More heat…
More current…
Less resistance…
The silicon is acting as a
thermistor
Its resistance decreases with
temperature
https://www.vascak.cz/data/android/physicsatschool/templateimg.php?s=pol_pohyb_der&l=
42
en
Intrinsic Material
 No impurity
 No charge carrier At 0ºk.
43
Intrinsic Material
e-
Si
h+ Si
Si Si
Si
44
Extrinsic Material
 Introducing impurities:- Doping.

 Aim:- generating carriers.
 Acceptors.
amphoteric.
 Donors.
 N-type= Intrinsic + Donor.
 P-type = Intrinsic + Acceptor.
45
The Phosphorus Atom
Phosphorus is number 15
in the periodic table
It has 15 protons and 15

electrons – 5 of these
electrons are in its outer shell
46
Doping – Making n-type Silicon
Relying on heat or light for
conduction does not make
for reliable electronics
Suppose we remove a silicon

atom from the crystal
lattice…
and replace it with a

phosphorus atom
We now have an electron that is not bonded – it is thus free for conduction
47
Doping – Making n-type Silicon
Let’s remove another silicon
atom…
and replace it with a
phosphorus atom
As more electrons are
available for conduction we
have increased the
conductivity of the material
Phosphorus is called the If we now apply a potential difference across the

dopant silicon…
48
Extrinsic Conduction – n-type Silicon
A current will flow

Note:
The negative
electrons move
towards the positive
terminal
49
N-type Silicon From now on
n-type will be
shown like this.
 This type of silicon is called n-type

 This is because the majority charge
carriers are negative electrons
 A small number of minority charge carriers – holes – will exist due to
electrons-hole pairs being created in the silicon atoms due to heat
 The silicon is still electrically neutral as the number of protons is equal to
the number of electrons
50
The Boron Atom
Boron is number 5 in the
periodic table
It has 5 protons and 5

electrons – 3 of these
electrons are in its outer
shell
51
Doping – Making p-type Silicon
As before, we remove a
silicon atom from the crystal
lattice…
This time we replace it with

a boron atom
Notice we have a hole in a

bond – this hole is thus free
for conduction
52
Doping – Making p-type Silicon
Let’s remove another silicon
atom…
and replace it with another
boron atom
As more holes are available for
conduction we have increased
the conductivity of the material
Boron is the dopant in this If we now apply a potential difference across the
case silicon…
53
Extrinsic Conduction – p-type silicon
A current will flow –

this time carried by
positive holes
Note:
The positive holes move
towards the negative
terminal
54
P-type Silicon From now on
p-type will be
shown like this.
 This type of silicon is called p-type

 This is because the majority charge carriers are positive holes
 A small number of minority charge carriers – electrons – will exist due to
electrons-hole pairs being created in the silicon atoms due to heat
 The silicon is still electrically neutral as the number of protons is equal to the
number of electrons
55
Extrinsic Material
Si Si Si Si
Si Si e-
h+
Si Si Si
Si Si Si
56
Carriers Concentrations
 To know the Electrical properties.

 no of charge carriers per cm .
3
 each impurity atom one majority carrier.

 the distribution of carriers over the available energy
states.
The Fermi Level
 Electrons in solids obey Fermi-Dirac statistics.

1
f (E)  ( E E f )
1 e kT
 At T<0K (2) When, E>Ef

(1) When, E<Ef 1
1 f (E)  0
f (E)  1
1 0 1 
The Fermi Level
f(E)
1
T=0ºK
T1>T
2 >0ºK
1
1/2
E
Ef
1 1 1
f (E f )  ( E f E f )  
1 e kT 11 2
The Fermi Level
E
f(Ec) f(Ec)
Ec
Ef
[1-f(Ec)]
Ev
≈
f(E) Intrinsic
p-type
n-type
1 1/2 0
Electron and Hole Concentrations at Equilibrium
E
Electrons
N(E)f(E)
EC
Ef
EV
N(E)[1-f(E)]
Holes
Intrinsic
p-type
n-type
Optical Absorption
Luminescence
Photoluminescence
 Fluorescence: emission stops in about 10-8 s.
 Ex : fluorescence lamp
 Phosphorescence: If emission stops in about seconds or
even minutes.
 Ex : phosphors
Electroluminescence
 By using electrical energy generating photon emission.
 Ex: LEDs.
Effects of Heat and Light
• In conductors currents flows due to free electrons in the
interatomic spaces.
• As the temperature increases the vibration in the lattice will
increase due to which collision of free electrons with atoms
increase.
• This will lead to reduction of magnitude of current.
• Conductors will have positive temperature coefficient
• https://www.vascak.cz/data/android/physicsatschool/templ
ateimg.php?s=mf_vnitrni_energie&l=en
Effects of Heat and Light
• In semiconductor as the temperature increases more
charge carriers are generated because of which current
will increase.
• So Semiconductors will have negative temperature
coefficient
• https://www.vascak.cz/data/android/physicsatschool/t
emplateimg.php?s=pol_generace&l=en
Carrier Charge Density
• Intrinsic Semiconductor: Pure semiconductor.
• Number of atoms per cubic centimeter is 5 *1022,
• Electron density ni=1.5*1010/cm3
• This means 1.5*1010 electrons have released one
electron and consequently 1.5*1010 holes have been
created.
• So the hole density is same as the electron density
(pi=ni)
Doped Semiconductor
• If an n-type material has a density of n free electrons
per cubic centimeter.
• By law of mass action n*p=ni2
• n=ND+p
• p=Np+n
• ND+p=Np+n
Semiconductor Conductivity
Charge Carrier Velocity
• Electrons have greater mobility than holes.
• The mobility constants determine the electrons and
hole velocities under the influence of an electric field.
• Electron velocity vn=-μnε
• Hole velocity vp=-μpε
Mobile Charge Carriers in Semiconductors
• Three primary types of carrier action occur inside a semiconductor:
– Drift: charged particle motion under the influence of an

electric field.
– Diffusion: particle motion due to concentration gradient

or temperature gradient.
– Recombination-generation (R-G)
EE130/230M Spring 2013 Lecture 4, Slide 70

Diffusion of carriers
Diffusion Process
 Carriers in semiconductor diffuse in a carrier gradient by random thermal motion and scattering from the
lattice and impurities.
71
Diffusion of carriers
Drift and diffusion
 Minority current flow is primarily diffusion.
 Majority .current flow is primarily drift.
 The hole drift and diffusion current densities are in the same direction.
 The electron drift and diffusion current densities are in the opposite direction
J ( x)  J n ( x )  J p ( x )
72
Electrons as Moving Particles
In vacuum In semiconductor
F = (-q)E = moa F = (-q)E = mn*a

where mn* is the
conductivity effective mass
Conductivity Effective Mass, m*
Under the influence of an electric field (E-field), an electron or a hole is accelerated:
a
q  electrons
mn*
a *
q  holes
mp
Electron and hole conductivity effective masses

Si Ge GaAs
mn*/mo 0.26 0.12 0.068
mp*/mo 0.39 0.30 0.50
mo = 9.110-31 kg
Carrier Scattering
• Mobile electrons and atoms in the Si lattice are always in random thermal
motion.
– Electrons make frequent collisions with the vibrating atoms
“lattice scattering” or “phonon scattering” – increases with increasing T
• Other scattering mechanisms:

– deflection by ionized impurity atoms
– deflection due to Coulombic force between carriers
“carrier-carrier scattering” – only significant at high carrier concentrations
• The net current in any direction is zero, if no E-field is applied.

3 2
1
electron
4
5
Thermal Velocity, vth
3 1 * 2
Average electron kinetic energy  kT  mn vth
2 2
3kT 3  0.026 eV  (1.6 10 19 J/eV)

vth  
*
mn 0.26  9.1 10 31 kg
 2.3 10 m/s  2.3  10 cm/s
5 7
Carrier Drift
• When an electric field (e.g. due to an externally applied voltage) exists within a
semiconductor, mobile charge-carriers will be accelerated by the electrostatic force:
2
3 1
4 electron
5
E
Electrons drift in the direction opposite to the E-field  net current
Because of scattering, electrons in a semiconductor do not undergo constant acceleration.
However, they can be viewed as quasi-classical particles moving at a constant average drift
velocity vdn
Carrier Mobility, m
For electrons: |vdn| ≡ mnE

mn  [qtmn / mn*] is the electron mobility
Similarly, for holes: |vdp|= mpE

mp  [qtmp / mp*] is the hole mobility
Electron and hole mobilities for intrinsic semiconductors @ 300K
Si Ge GaAs InAs
mn (cm2/Vs) 1400 3900 8500 30,000
mp (cm2/Vs) 470 1900 400 500
Example: Drift Velocity Calculation
a) Find the hole drift velocity in an intrinsic Si sample for E = 103 V/cm.
b) What is the average hole scattering time?
Solution:
a) vdp = mpE
qt m p m*p m p
b) mp  *
 t mp 
m p q
Mobility Dependence on Temperature
1 1 1
 
m m phonon mim purity
Hole Drift Current Density, Jp,drift
vdp Dt A = volume from which all holes cross plane in time Dt

p vdp Dt A = number of holes crossing plane in time Dt
q p vdp Dt A = hole charge crossing plane in time Dt
q p vdp A = hole charge crossing plane per unit time = hole current
 Hole drift current per unit area Jp,drift = q p vdp
Conductivity and Resistivity
• In a semiconductor, both electrons and holes conduct current:
J p ,drift  qpm p E J n,drift  qn(mn E )
J drift  J p ,drift  J n,drift  qpm p E  qnmn E
J drift  (qpm p  qnmn ) E  E
• The conductivity of a semiconductor is   qpm p  qnmn

– Unit: mho/cm
1
• The resistivity of a semiconductor is 
– Unit: ohm-cm 
Resistivity Dependence on Doping
For n-type material:

1

qnm n
For p-type material:

1
p-type 
qpm p
n-type
Note: This plot (for Si) does not apply
to compensated material (doped
with both acceptors and donors).
Electrical Resistance
I V
+ _
W
t
uniformly doped semiconductor
V L
Resistance R  [Unit: ohms]
I Wt
where  is the resistivity
Example: Resistance Calculation
What is the resistivity of a Si sample doped with 1016/cm3 Boron?
Answer:
1 1
 
qnm n  qpm p qpm p

 (1.6 10 19 16
)(10 )( 450 ) 1
 1.4   cm
Example: Dopant Compensation
Consider the same Si sample doped with 1016/cm3 Boron, and additionally doped with
1017/cm3 Arsenic. What is its resistivity?
Answer:
1 1
 
qnm n  qpm p qnm n

 (1.6 10 19
)(9 10 )(600 )
16
1
 0.12   cm
Summary
• Electrons and holes can be considered as quasi-classical particles with
effective mass m*
• In the presence of an electric field E, carriers move with average drift
velocity vd = mE , m is the carrier mobility
– Mobility decreases w/ increasing total concentration of ionized dopants
– Mobility is dependent on temperature
• decreases w/ increasing T if lattice scattering is dominant
• decreases w/ decreasing T if impurity scattering is dominant
• The conductivity () hence the resistivity () of a semiconductor is

dependent on its mobile charge carrier concentrations and mobilities
  qpm p  qnmn   1
Semiconductor Diode
Pn-junction Diode
 The term diode indicates two-electrode device.
 The two sides of the junction are provided with connecting terminals.
 A diode is a one-way device, offering a low resistance when forward biased and behaving almost as an
insulator when reverse biased.
 Symbols of PN Junction diode
88
The p-n Junction
Suppose we join a piece of p-type silicon to a piece of n-type silicon
We get what is called a p-n junction

Remember – both pieces are electrically neutral
89
pn junction diode
equilibrium
‘-’ ve Ion
‘+’ ve Ion
Ec Ec
Ef
Ef
Ev Ev
p-type n-type
90
The p-n Junction
When initially joined electrons
from the
n-type migrate into the p-type
– less electron density there
When an electron fills a hole

– both the electron and hole
disappear as the gap in the
bond is filled
This leaves a region with no free charge carriers – the depletion layer – this layer acts as
an insulator
91
The p-n Junction 0.6 V
As the p-type has gained

electrons – it is left with an
overall negative charge…
As the n-type has lost

electrons – it is left with an
overall positive charge…
Therefore there is a voltage across the junction – the junction voltage – for silicon this is
approximately 0.6 V
92
pn junction diode
Ec
Ec
Ef Ef
Ev
p-type Ev
93
n-type
pn junction diode
qV0
Ec qV0
Ec
Efp Efn
Ev
p-type Ev
n-type 94
The Forward Biased P-N Junction
Take a p-n junction
Apply a voltage across
it with the
p-type postitive
n-type negative
Close the switch
The voltage sets up an
electric field
throughout the The junction is said to be forward –
junction biased
95
Negative electrons in the
n-type feel a repulsive
force which pushes them
into the depletion layer
Positive holes in the p-

type also experience a
repulsive force which
pushes them into the
depletion layer Therefore, the depletion layer is eliminated and a current
flows through the p-n junction
96
At the junction electrons
fill holes
Both disappear as they
are no longer free for
conduction
They are replenished by

the external cell and
current flows
This continues as long as the external voltage is greater than

the junction voltage i.e. 0.6 V
97
If we apply a higher
voltage…
The electrons feel a
greater force and move
faster
The current will be

greater and will look
like
this….
The arrow shows the
The p-n junction is called a DIODE and is direction in which it
represented by the symbol… conducts current
98
pn junction diode
Forward bias
+ + + + +
+ + + + +
+ + +
+ + + + + + +
+ + +
+ + + + + +
+ + + + +
++
+ + + + + +
99
PN Junction Forward Biased Characteristics
The Reverse Biased P-N Junction
Take a p-n junction
Apply a voltage across
it with the
p-type negative
n-type positive
Close the switch
The voltage sets up an
electric field
throughout the
junction The junction is said to be reverse – biased
101
The Reverse Biased P-N Junction
Negative electrons in the
n-type feel an attractive
force which pulls them
away from the depletion
layer
Positive holes in the p-

type also experience an
attractive force which
pulls them away from the
depletion layer
Thus, the depletion layer ( INSULATOR ) is widened and no
current flows through the
p-n junction 102
pn junction diode
Reverse bias
+ + + + +
+ + + + +
+ + +
+ + + + + + +
+ + +
+ + + + + +
+ + + + +
++
+ + + + + +
103
Reverse Bias Current
Junction Temperature Effects
• When the temperature of the semiconductor material
is raised, increasing numbers of electrons break away
from their atoms.
• This will generate additional minority charge carriers
causing Io to increase as the junction temperature
rises.
• Io(T2)=Io(T1)(2T2-T1/10)
Reverse Bias Current variation with Temperature
The Semiconductor Diode
• The semiconductor diode is a p-n junction
• In reverse bias it does not conduct
 In forward bias it conducts as long as the

external voltage is greater than the junction
voltage
 A diode should always have a protective resistor
in series as it can be damaged by a large current
107
The Semiconductor Diode
• The silver line drawn on one side of the diode
represents the line in its symbol
• This side should be connected to the negative terminal
for the diode to be forward biased
• Diodes are used to change alternating current to direct
current
• Diodes are also used to prevent damage in a circuit by
connecting a battery or power supply the wrong way
around
108
Ideal Current-Voltage Relationship
Current ID equation of a pn junction diode:
IS = the reverse-bias saturation current (for silicon 10-15 to 10-13 A)

VT = the thermal voltage (0.026 V at room temperature)
n = the emission coefficient (1 ≤ n ≤ 2)
PN Junction Currents and Voltages
• Shockley Equation
• ID=Io[e(VD-nVT)-1]
• VT=KT/q
• Junction Voltage
• VD=(nVT)ln(ID/Io)
Forward Resistance and Reverse Resistance
• Forward Resistance RF=VF/IF
• Reverse Resistance RR=VR/IR
• Dynamic Resistance rd=ΔVF/ΔIF
• Dynamic Resistance (Thumb of Rule) r’d=26mV/ΔIF
Ideal Current-Voltage Relationship
Example
Determine the current in a pn junction diode.
Consider a pn junction at T = 300 K in which IS = 1.4 x 10-14 A and n = 1.
Find the diode current for vD = +0.75 V and vD = -0.75 V.
Very small current

PN Junction Diode
 The basic PN junction diode circuit symbol, and conventional current direction and
voltage polarity.
 The graphs shows the ideal I-V characteristics

of a PN junction diode.
 The diode current is an exponential function
of diode voltage in the forward-bias region.
 The current is very nearly zero in the reverse-
bias region.
PN Junction Diode
● Temperature Effects
 Both IS and VT are functions of temperature.
 The diode characteristics vary with temperature.
 For silicon diodes, the change is
approximately 2 mV/oC.
•Forward-biased PN junction
characteristics versus
temperature.
•The required diode voltage,
V to produce a given current
decreases with an increase in
temperature. V2
V1
Analysis of PN Junction Diode in a Circuit
CIRCUIT REPRESENTATION OF DIODE – Ideal
Model
VD = - VS
Reverse-bias
I-V characteristics of ideal model
Forward-bias
EXAMPLE: Determine the diode voltage and current
in the circuit using ideal model for a silicon diode.
Also determine the power dissipated in the diode.
CIRCUIT REPRESENTATION OF DIODE – Piecewise
Linear Model
VD = - VS
Reverse-bias
I-V characteristics of constant voltage

Forward-bias model
EXAMPLE: Determine the diode voltage and current
in the circuit (using constant voltage model) for a
silicon diode. Also determine the power dissipated in
the diode. Consider the cut-in voltage V = 0.65 V.
CIRCUIT REPRESENTATION OF DIODE – Piecewise
Linear Model
VD = - VS
Reverse-bias
I-V characteristics of piecewise model

Forward-bias
EXAMPLE: Determine the diode voltage and current in
the circuit using piecewise linear model for a silicon
diode. Also determine the power dissipated in the
diode. Consider the cut-in voltage V = 0.65 V and the
diode DC forward resistance, rf = 15 Ω.
Why do you need to use these models?
Diode Circuits: Direct Approach
Question
Determine the diode voltage and current for
the circuit.
Consider IS = 10-13 A.
VPS = IDR + VD
ITERATION METHOD
5 = (2 x103) (10-3) [e ( VD / 0.026) – 1 ] + VD
VD = 0.619 V
And ID = 2.19 mA
IDEAL MODEL PIECEWISE PIECEWISE DIRECT
LINEAR MODEL 1 LINEAR MODEL 2 APPROACH
Diode voltage VD 0V 0.65 V 0.652 V 0.619 V
Diode current ID 2.5 mA 2.175 mA 2.159 mA 2.19 mA

DC Load Line
• A linear line equation

• ID versus VD
• Obtain the equation using KVL
The value of ID
Use KVL: VD
2ID + VD – 5 = 0
ID = -VD + 5 = - VD + 2.5
2 2
EXAMPLE
A diode circuit and its load line are as shown in the figure below
Design the circuit when the diode is operating in forward bias condition.
Determine the diode current ID and diode forward resistance rf in the circuit using a
piecewise linear model. Consider the cut-in voltage of the diode, Vγ = 0.65V.
IDR + VD – 5 = 0 at VD = 0.7V
ID = -VD/R + 5/ R ID = (5 – 0.7) / 2 = 2.15 mA
5/ R = 2.5 mA
R = 2 kΩ Now, VD = Vγ + ID rf
0.7 = 0.65 + 2.15 rf
rf = 0.05 / 2.15 mA = 23. 3 Ω
Diode AC Models
• The depletion region of a pn-junction is a layer
depleted of charge carriers situated between to blocks
of low-resistance material.
• The depletion layer capacitance may be calculated
from the equation for a parallel plate capacitor if the
junction dimensions are known.
• Typically Cpn=4 pF
Diode AC Model
• In forward biased junction if the applied voltage is
suddenly reversed, forward current IF ceases
immediately, leaving some majority carriers in the
depletion region.
• These carriers have to go back out of the depletion
region. i.e when a forward biased junction is suddenly
reversed, there is a reverse current. This is similar to
capacitor discharge and is given as Cd=τIF/VF
AC Equivalent Circuits (Reverse Biased and Forward Biased)
Reverse Recovery Time

Unit I-PN Junction PDF

Încărcat de

Informații document

Descriere originală:

Titlu original

Drepturi de autor

Formate disponibile

Partajați acest document

Partajați sau inserați document

Opțiuni de partajare

Vi se pare util acest document?

Este necorespunzător acest conținut?

Drepturi de autor:

Formate disponibile

Unit I-PN Junction PDF

Încărcat de

Drepturi de autor:

Formate disponibile

BASIC CIRCUITS AND DIODES

 Proposed by J.J Thomson

 Discovered the “electron”.

 Proposed by Ernest Rutherford.

 mass of the atom ≈ mass of the small nucleus.

 Einstein interpreted an important experiment that

Angular momentum of the

 Atoms are made of nucleus (Protons (+) & Neutrons)

 EX:- silicon = Si (Z=14)

• One or more pairs of electrons

• One or more electrons from 1

Gases, liquids, or solids – Crystalline solids

Insulators have tightly bound electrons in their outer shell

Conductors have loosely bound electrons in their outer shell

The two most common semiconductors are silicon and germanium

Energy gap Heat

We have the crystal lattice

This is how silicon looks

It has no free electrons – it cannot conduct electricity – therefore it behaves like an

However, if we apply a little

An electron may gain

Let’s take a closer look at

There is a gap in the bond –

Let’s give it a little more

We have seen that, in

This creates electron-hole

Take a piece of silicon…

And apply a potential

This sets up an electric field

When heat is applied an electron is released

The electron feels a force

It is attracted to the positive

Now, let’s apply some more

 Introducing impurities:- Doping.

It has 15 protons and 15

Suppose we remove a silicon

and replace it with a

Phosphorus is called the If we now apply a potential difference across the

A current will flow

 This type of silicon is called n-type

It has 5 protons and 5

This time we replace it with

Notice we have a hole in a

A current will flow –

 This type of silicon is called p-type

 To know the Electrical properties.

 each impurity atom one majority carrier.

 Electrons in solids obey Fermi-Dirac statistics.

 At T<0K (2) When, E>Ef

– Drift: charged particle motion under the influence of an

– Diffusion: particle motion due to concentration gradient

EE130/230M Spring 2013 Lecture 4, Slide 70

F = (-q)E = moa F = (-q)E = mn*a

Electron and hole conductivity effective masses

• Other scattering mechanisms:

• The net current in any direction is zero, if no E-field is applied.

3kT 3  0.026 eV  (1.6 10 19 J/eV)

For electrons: |vdn| ≡ mnE

Similarly, for holes: |vdp|= mpE

vdp Dt A = volume from which all holes cross plane in time Dt

• The conductivity of a semiconductor is   qpm p  qnmn

For n-type material: