KSC2335

KSC2335
High Speed, High Voltage Switching
• Industrial Use

1 TO-220
NPN Epitaxial Silicon Transistor
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 500 V
V CEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current (DC) 7 A
ICP *Collector Current (Pulse) 15 A
IB Base Current (DC) 3.5 A
PC Collector Dissipation (Ta=25°C) 1.5 W
PC Collector Dissipation (TC=25°C) 40 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
* PW≤300µs, Duty Cycle≤10%

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage IC = 3A, IB1 = 0.6A, L = 1mH 400 V
VCEX(sus)1 Collector-Emitter Sustaining Voltage IC = 3A, IB1 = -IB2 = 0.6A 450 V
VBE(off) = -5V, L = 180µH, Clamped
VCEX(sus)2 Collector-Emitter Sustaining Voltage IC = 6A,IB1= 2A, IB2 = -0.6A 400 V
VBE(off) = -5V, L = 180µH, Clamped
ICBO Collector Cut-off Current VCB = 400V, IE = 0 10 µA
ICER Collector Cut-off Current VCE = 400V, RBE= 51Ω @ TC=125°C 1 mA
ICEX1 Collector Cut-off Current VCE = 400V, VBE(off)= -1.5V 10 µA
ICEX2 Collector Cut-off Current VCE = 400V, VBE(off)= -1.5V @ 1 mA
TC=125°C
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA
hFE1 * DC Current Gain VCE = 5V, IC = 0.1A 20 80
hFE2 VCE = 5V, IC = 1A 20 80
hFE3 VCE = 5V, IC = 3A 10
VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1 V
VBE(sat) * Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1.2 V
tON Turn ON Time VCC =150V, IC= 3A 1 µs
tSTG Storage Time IB1 = -IB2 = 0.6A 2.5 µs
RL= 50Ω
tF Fall Time 1 µs
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed

hFE Classification
Classification R O Y
hFE2 20 ~ 40 30 ~ 60 40 ~ 80

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 KSC2335
Typical Characteristics

IB=0.45A
5 1000
IB=0.50A IB=0.40A
VCE = 5 V
IB=0.35A
Pulsed
IB=0.30A
4
IC[A], COLLECTOR CURRENT

IB=0.25A

hFE, DC CURRENT GAIN

IB=0.20A 100
3
IB=0.15A

IB=0.10A
2
10
IB=0.05A

0 1
0 1 2 3 4 5 0.01 0.1 1 10

VCE[V], COLLECTOR-EMITTER VOLTAGE Ic[A], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

VCE(SAT) [V], VBE(SAT) [V], SATURATION VOLTAGE

160
10

IC = 5 IB
140
Pulsed

120
dT [%], IC DERATING

1 VBE(SAT)
100

80

S/b Limited
60
0.1
40
Dissipation Limited
VCE(SAT)
20

0
0.01
0 50 100 150 200
0.01 0.1 1 10

o
VCB[V], COLLECTOR-BASE VOLTAGE TC [ C], CASE TEMPERATURE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Derating Curve of Safe Operating Areas
Collector-Emitter Saturation Voltage

10 100
Single Pulse

PW = 10 us
IC [A], COLLECTOR CURRENT

8
IC [A], COLLECTOR CURRENT

10

50 us
6 1 Dissipation Limoted
0.1 ms

0.3 ms
4
S/b Limited
0.1
1 ms

100 ms
VCEO(SUS)

VCEX(SUS)

2 0.01 10 ms

0 1E-3
0 100 200 300 400 500 1 10 100 1000 10000

VCE [V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Reverse Bias Safe Operating Area Figure 6. Forward Bias Safe Operating Area

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 KSC2335
Package Demensions

TO-220

1.30 ±0.10 9.90 ±0.20 4.50 ±0.20

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FAST® OPTOPLANAR™ STAR*POWER™
Bottomless™ FASTr™ PACMAN™ Stealth™
CoolFET™ FRFET™ POP™ SuperSOT™-3
CROSSVOLT™ GlobalOptoisolator™ Power247™ SuperSOT™-6
DenseTrench™ GTO™ PowerTrench® SuperSOT™-8
DOME™ HiSeC™ QFET™ SyncFET™
EcoSPARK™ ISOPLANAR™ QS™ TruTranslation™
E2CMOS™ LittleFET™ QT Optoelectronics™ TinyLogic™
EnSigna™ MicroFET™ Quiet Series™ UHC™
FACT™ MICROWIRE™ SLIENT SWITCHER® UltraFET®
FACT Quiet Series™ OPTOLOGIC™ SMART START™ VCX™
STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2001 Fairchild Semiconductor Corporation Rev. H3