FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET

November 2013

FQP10N20C / FQPF10N20C
N-Channel QFET® MOSFET
200 V, 9.5 A, 360 mΩ
Features Description
• 9.5 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, This N-Channel enhancement mode power MOSFET is
ID = 4.75 A produced using Fairchild Semiconductor’s proprietary
• Low Gate Charge (Typ. 20 nC) planar stripe and DMOS technology. This advanced
• Low Crss (Typ. 40.5 pF) MOSFET technology has been especially tailored to reduce
• 100% Avalanche Tested on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.

G G
D G
S TO-220 D
S TO-220F

MOSFET Maximum Ratings TC = 25oC unless otherwise noted.

Symbol Parameter FQP10N20C FQPF10N20C Unit
VDSS Drain to Source Voltage 200 V
-Continuous (TC = 25oC) 9.5 9.5 * A
ID Drain Current
-Continuous (TC = 100oC) 6.0 6.0 * A
IDM Drain Current - Pulsed (Note 1) 38 38 * A
VGSS Gate to Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 210 mJ
IAR Avalanche Current (Note 1) 9.5 A
EAR Repetitive Avalanche Energy (Note 1) 7.2 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
(TC = 25oC) 72 38 W
PD Power Dissipation
- Derate above 25oC 0.57 0.3 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
TL 300 °C
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol Parameter FQP10N20C FQPF10N20C Unit
RθJC Thermal Resistance, Junction to Case, Max 1.74 3.33 °C/W
RθJA Thermal Resistance, Junction to Ambient, Max 62.5 62.5 °C/W

©2003 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQP10N20C / FQPF10N20C Rev. C1
 FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQP10N20C FQP10N20C TO-220 Tube N/A 50 units
FQPF10N20C FQPF10N20C TO-220F Tube N/A 50 units

Electrical Characteristics TC = 25oC unless otherwise noted.

Symbol Parameter Test Conditions Min Typ Max Unit

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 200 -- -- V
ΔBVDSS Breakdown Voltage Temperature Coeffi-
ID = 250 μA, Referenced to 25°C -- 0.28 -- V/°C
/ ΔTJ cient
VDS = 200 V, VGS = 0 V -- -- 10 μA
IDSS Zero Gate Voltage Drain Current
VDS = 160 V, TC = 125°C -- -- 100 μA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 4.75 A -- 0.29 0.36 Ω
On-Resistance
gFS Forward Transconductance VDS = 40 V, ID = 4.75 A -- 5.5 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 395 510 pF
Coss Output Capacitance f = 1.0 MHz -- 97 125 pF
Crss Reverse Transfer Capacitance -- 40.5 53 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 11 30 ns
VDD = 100 V, ID = 9.5 A,
tr Turn-On Rise Time -- 92 190 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 70 150 ns
(Note 4)
tf Turn-Off Fall Time -- 72 160 ns
Qg Total Gate Charge VDS = 160 V, ID = 9.5 A, -- 20 26 nC
Qgs Gate-Source Charge VGS = 10 V -- 3.1 -- nC
Qgd Gate-Drain Charge (Note 4) -- 10.5 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9.5 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 38 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.5 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, IS = 9.5 A, -- 158 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/μs -- 0.97 -- μC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 3.5 mH, IAS = 9.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 9.5 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.

©2003 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FQP10N20C / FQPF10N20C Rev. C1
 FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET
Typical Characteristics

VGS
Top : 15.0 V
10.0 V
8.0 V
1 1
10 7.0 V 10
6.5 V

ID, Drain Current [A]

ID, Drain Current [A]

6.0 V o
5.5 V 150 C
5.0 V
Bottom : 4.5 V
o
25 C o
0 0
-55 C
10 10

※ Notes :
1. 250μ s Pulse Test ※ Notes :
2. TC = 25℃ 1. VDS = 40V
2. 250μ s Pulse Test
-1 -1
10 10
10
-1
10
0
10
1 2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

1.5
Drain-Source On-Resistance

IDR, Reverse Drain Current [A]

1
10

1.0 VGS = 10V

RDS(ON) [Ω ],

0
VGS = 20V 10
0.5 150℃
25℃

※ Notes :
1. VGS = 0V
※ Note : TJ = 25℃ 2. 250μ s Pulse Test

0.0 -1
10
0 5 10 15 20 25 30 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation with Source Current
and Temperature

1200 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd VDS = 40V
1000 10
VDS = 100V
VGS, Gate-Source Voltage [V]

VDS = 160V
800
Capacitances [pF]

Ciss 8

Coss
600 6

Crss
400 4

200 ※ Note ;
2
1. VGS = 0 V
2. f = 1 MHz ※ Note : ID = 9.5A

0 0
-1 0 1
10 10 10 0 4 8 12 16 20 24

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

©2003 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FQP10N20C / FQPF10N20C Rev. C1
 FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET
Typical Characteristics (Continued)

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0
0.9 ※ Notes :
1. VGS = 0 V ※ Notes :
2. ID = 250 μA 0.5
1. VGS = 10 V
2. ID = 4.75 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature

2 Operation in This Area

10 2 Operation in This Area
is Limited by R DS(on) 10
is Limited by R DS(on)

100 μs
100 μs
ID, Drain Current [A]

1
ID, Drain Current [A]

10 1 ms
1 ms
10 ms 10
1

DC 10 ms
0
10
100 ms

DC
0
※ Notes : 10
※ Notes :
-1
10 1. TC = 25 C
o o
1. TC = 25 C
o o
2. TJ = 150 C 2. TJ = 150 C
3. Single Pulse 3. Single Pulse

-2 -1
10 10
0 1 2 0 1 2
10 10 10 10 10 10
VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FQP10N20C for FQPF10N20C

10

8
ID, Drain Current [A]

0
25 50 75 100 125 150

TC, Case Temperature [℃]

Figure 10. Maximum Drain Current

vs Case Temperature

©2003 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FQP10N20C / FQPF10N20C Rev. C1
 FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET
Typical Characteristics (Continued)

Response [ C/W]
0
o 10
ThermalResponse D = 0 .5

※ N o te s :
0 .2 1 . Z θ J C( t ) = 1 . 7 4 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
0 .1 3 . T J M - T C = P D M * Z θ J C( t )
(t),Thermal

-1 0 .0 5
10
0 .0 2
Zθ (t),

0 .0 1
JC

s in g le p u ls e
ZθJC

-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11-1. Transient Thermal Response Curve for FQP10N20C

[oC/W]

D = 0 .5
0
10
Response

0 .2
Response

※ N o te s :
1 . Z θ J C( t) = 3 .3 3 ℃ /W M a x .
0 .1 2 . D u t y F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t)
Thermal

0 .0 5
Thermal

-1
10
0 .0 2
ZθJCZ(t), (t),

0 .0 1
θ JC

s in g le p u ls e

-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11-2. Transient Thermal Response Curve for FQPF10N20C

©2003 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FQP10N20C / FQPF10N20C Rev. C1
 FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
IG = const.
3mA

Charge

Figure 13. Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
V
10V
GS
DUT
td(on) tr td(off)
tf
t on t off

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

V
10V
GS
GS DUT VDD VDS (t)
tp
tp Time

©2003 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FQP10N20C / FQPF10N20C Rev. C1
 FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

©2003 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FQP10N20C / FQPF10N20C Rev. C1
 FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET
Mechanical Dimensions

Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003

©2003 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FQP10N20C / FQPF10N20C Rev. C1
 FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET
Mechanical Dimensions

Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003

©2003 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com

FQP10N20C / FQPF10N20C Rev. C1
 FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET
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Definition of Terms
Datasheet Identification
Advance Information
Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I66

©2003 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com

FQP10N20C / FQPF10N20C Rev. C1